有序CdS纳米线阵列的制备和光学特性

应用直流电沉积法在多孔氧化铝模板中制备了高度有序的CdS纳米线阵列,并由XRD、Raman、SEM、TEM和HRTEM等进行物理化学表征.结果表明,沉积在多孔氧化铝模板中的CdS呈六角结构,c轴沿孔长度方向定向生长.紫外吸收光谱研究表明,随着纳米线尺寸的减小,纳米线阵列的吸收边向短波长方向移动,荧光光谱测量显示,CdS纳米线阵列的荧光强度高于氧化铝模板,而且在可见光区的荧光特性与激发波长无关.     

两步电沉积法制备单晶Au纳米线阵列

以多孔阳极氧化铝为模板,采用两步交流电脉冲沉积法制备具有单晶结构的有序金纳米线阵列.实验表明:在氧化铝模板中由交流电沉积制备的金属纳米线,其成核电压直接影响模板内纳米线的填充率,而生长电压则控制纳米线的结构和形貌均一性.在最佳沉积条件下得到的金纳米线阵列,其填充率高达95%,且具有单晶结构.     

单晶Ni纳米线阵列的制备与磁性能

采用恒电流沉积方法, 在多孔阳极氧化铝(AAO)模板中制备出了具有单晶结构的Ni纳米线阵列. 采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射(XRD)技术对制备的Ni纳米线阵列的形貌及结构进行了表征. 利用振动样品磁强计(VSM)对单晶Ni纳米线阵列的磁性能进行了研究. 结果表明, 单晶镍纳米线阵列的易磁化方向为纳米线轴向, 并且与多晶纳米线相比显示出了更高的矫顽力. 直径为30 nm的纳米线具有较高的矫顽力(8.236×104 A/m)和较高的剩磁比(Mr＝0.94Ms).     

电化学法制备Ni-W-P纳米线阵列电极及其催化析氢性能

采用二次氧化法制备了多孔阳极氧化铝(AAO)模板, 通过控制电位沉积技术在AAO模板内组装了Ni-W-P合金纳米线阵列. 在扫描电子显微镜(SEM)下观察到Ni-W-P纳米线表面光滑, 长约20 μm, 直径均匀(约为100 nm), 与AAO模板孔径基本一致. 阴极极化曲线和交流阻抗图谱(EIS)的测试结果表明, Ni-W-P合金纳米线阵列电极析氢反应(HER)电阻减小, 具有更高的催化析氢活性, 电流密度为10 mA·cm^-2时, 析氢极化电位较Ni-W-P合金电极正移约250 mV.     

一种新的电化学方法制备CdS纳米线阵列

用一种新的电化学方法在多孔氧化铝模板中制备了CdS纳米线阵列体系,并用XRD、TEM对样品进行表征,结果显示CdS纳米线为立方相和六方相的多晶混合结构,对沉积机理进行了讨论.荧光光谱测量显示CdS纳米线阵列体系有三个强的紫外发光带和一个黄绿发光带.该文所使用的方法可以用来在氧化铝模板中制备其它材料的纳米线阵列体系.     

糖葫芦状二氧化钛纳米线阵列的制备及其光催化性能

 采用溶胶-电泳技术,在多孔阳极氧化铝(PAA)模板的有序孔洞中制备了高度取向的糖葫芦状TiO2纳米线阵列光催化剂,通过扫描电镜(SEM)和X射线衍射对样品进行了表征. 结果表明, TiO2纳米线为锐钛矿晶型,纳米线直径与PAA模板的孔径一致,且分布均匀. 纳米线取向性极好,每根纳米线都具有周期性凹凸,形似糖葫芦,因此命名为糖葫芦状TiO2纳米线阵列. 以甲基橙的降解反应评价了光催化剂的活性,与相同条件下制备的TiO2/玻璃膜相比, TiO2纳米线阵列在光照1 h时对甲基橙的降解率达到93.6%, 比前者提高了40.2%, 具有很好的光催化活性.     

用模板法制备TiO2纳米线阵列膜及光催化性能的研究

用溶胶-凝胶技术在多孔阳极氧化铝模板的有序微孔内制备了高度取向的TiO2纳米线阵列膜光催化剂.用XRD,AFM和SEM等手段对样品进行了表征.结果表明,TiO2纳米线阵列膜晶型为锐钛矿,从AFM图像中可以看出TiO2纳米线线径分布均匀一致,取向性极好,直径与AAO模板的孔径大小一致.以其对吖啶橙的降解效果作为评价光催化活性的标准,与相同条件下制备的TiO2/玻璃膜相比,TiO2纳米线阵列膜具有很好的催化活性.     

化学沉积法制备Ni-P纳米线与纳米管有序阵列

以多孔氧化铝膜为模板, 在室温下的酸性化学镀镍槽中通过化学沉积法生长出纳米线与纳米管有序阵列. 分别用X射线衍射仪(XRD)与透射电子显微镜(TEM)对纳米线、纳米管阵列进行表征. 并通过对纳米线与纳米管的生长方式进行分析比较, 系统地研究了多孔氧化铝模板的前处理对纳米阵列生长的影响. 结果表明, 生成的纳米线与纳米管均为非晶态的镍磷合金. 室温下镍纳米管的生成主要取决于敏化、活化过程, 而当纳米管的厚度达到一定程度后就不再随时间变化.     

ZnO纳米线形态对其光致发光性能的影响

以多孔氧化铝膜为模板,电化学沉积出Zn纳米线,再通过高温氧化得到ZnO纳米线阵列。通过改变制备多孔氧化铝模板的工艺参数来改变模板纳米孔径,进而改变ZnO纳米线的直径,得到不同形态的ZnO纳米线阵列。应用X射线衍射仪、透射电子显微镜测试技术表征了ZnO纳米线的结构与形貌。结果发现,X射线衍射时会出现随ZnO纳米线直径增大衍射峰增多和增强的现象。采用荧光光谱仪测试样品的光致发光性能,通过Gaussian原理对谱峰的拟合分析了ZnO纳米线形态对其光致发光光谱的影响。结果表明,随着纳米线直径从30nm至60nm依次增大,其结晶性和化学计量比逐渐变好。近紫外区和蓝光区的发射峰随着纳米线直径的增大而蓝移,而纳米线直径为60nm的样品则出现随直径增大而红移的现象。结果可见,直径在55~60nm间的某点将是ZnO纳米线的结构和光致发光性能变化的临界点。     

大长径比有序多孔阳极氧化铝模板的制备及用于镍纳米线阵列

报道一种恒电流二次氧化制备大长径比(>1000)阳极氧化铝(AAO)模板的方法,研究氧化时间和氧化电流密度分别对制备的AAO模板的表面形貌、孔径大小、厚度等的影响.结果表明,AAO模板的表面形貌及厚度n受m氧、厚化度电约流为密2度00及μ氧m、化长时径间比的为影10响0;-当13氧00化的电高流质密量度A为AO8模m板A·.c采m用-2电时化,氧学化沉1积8方h能法在制制备备出的孔A径A为O模15板0-的20孔0中成功制备了Ni纳米线阵列,分别用扫描电镜(SEM)、高分辨透射电镜(HRTEM)、X射线衍射(XRD)和X射线能量散射光谱(EDS)对其进行了表征;结果显示,制备的Ni纳米线排列整齐有序,每根Ni纳米线直径几乎相同,约150nm,长度约为180-200μm,长径比为1200-1300,与AAO模板的参数一致.研究了Ni纳米线阵列的长径比对其磁性能的影响,发现大长径比的Ni纳米线阵列具有明显的磁各向异性,而长径比约为200的Ni纳米线阵列未表现出明显的磁各向异性.本文结果表明,恒电流二次氧化方法能制备大长径比的AAO模板,并能用于制备大长径比的一维纳米材料阵列,可望在制备具有特殊光学、磁学等性能材料方面得到应用.     

Field emission properties of large-area nanowires of organic charge-transfer complexes

In this contribution, large-area organic charge-transfer complex (AgTCNQ and CuTCNQ) nanowires were synthesized by organic vapor-solid-phase reaction at mild experimental conditions. These nanowires were facilitated on the surface of Cu and Ag foils or different kinds of substrates coated with a layer of silver and copper on a large scale. The excellent field emission properties were observed in the as-grown AgTCNQ and CuTCNQ nanowires. They should have great potential in vacuum device applications.     

Preparation of metal-TCNQ charge-transfer complexes on conducting and insulating surfaces by photocrystallization

A generic method for the synthesis of metal-7,7,8,8-tetracyanoquinodimethane (TCNQ) charge-transfer complexes on both conducting and nonconducting substrates is achieved by photoexcitation of TCNQ in acetonitrile in the presence of a sacrificial electron donor and the relevant metal cation. The photochemical reaction leads to reduction of TCNQ to the TCNQ(-) monoanion. In the presence of M(x+)(MeCN), reaction with TCNQ(-)(MeCN) leads to deposition of M(x+)[TCNQ]x crystals onto a solid substrate with morphologies that are dependent on the metal cation. Thus, CuTCNQ phase I photocrystallizes as uniform microrods, KTCNQ as microrods with a random size distribution, AgTCNQ as very long nanowires up to 30 mum in length and with diameters of less than 180 nm, and Co[TCNQ](2)(H(2)O)(2) as nanorods and wires. The described charge-transfer complexes have been characterized by optical and scanning electron microscopy and IR and Raman spectroscopy. The CuTCNQ and AgTCNQ complexes are of particular interest for use in memory storage and switching devices. In principle, this simple technique can be employed to generate all classes of metal-TCNQ complexes and opens up the possibility to pattern them in a controlled manner on any type of substrate.     

基于琼脂支撑的液/液界面上AgTCNQ的电化学合成

具有高导电性和独特电学性质的金属有机络合物AgTCNQ是一种重要的电荷转移盐.本文采用琼脂作为胶凝剂构成水|1,2-二氯乙烷液液界面;施加电压时银离子由水相穿过水凝胶进入有机相,与TCNQ^-反应生成AgTCNQ纳米棒.结果表明液/液界面电化学方法为合成有机金属功能材料的有效途径.     

High-quality ultralong Bi2S3 nanowires: structure, growth, and properties

A simple one-step hydrothermal method for large-scale synthesis of ultralong single-crystalline Bi2S3 nanowires was reported, and the nanowires were comprehensively characterized. The diameters of the nanowires are about 60 nm, and their lengths range from tens of microns to several millimeters. The structure of the nanowires was determined to be of the orthorhombic phase, the growth direction was along [001], and the growth mechanism was investigated based on extensive high-resolution transmission electron microscopy observations. Optical absorption experiments revealed that the Bi2S3 nanowires are narrow-band semiconductors with a band gap E(g) approximately 1.33 eV. Electrical transport measurements on individual nanowires gave a resistivity of about 1.2 ohms cm and an emission current of 3.5 microA at a bias field of 35 V/microm. This current corresponds to a current density of about 10(5) A/cm2, which makes the Bi2S3 nanowire a potential candidate for applications in field-emission electronic devices.     

A simple hydrothermal route to large-scale synthesis of uniform silver nanowires

This paper describes the preparation of uniform silver nanowires by reducing freshly prepared silver chloride with glucose at 180 degrees C for 18 hours in the absence of any surfactants or polymers. Scanning electron microscopy studies indicated that the silver nanowires are about 100 nm in diameter and up to 500 microm in length. High-resolution transmission electron microscopy analyses showed that the silver nanowires grow perpendicularly to the Ag(200) plane. The silver nanowires are believed to grow through a solid-solution-solid process. Some influential factors on the growth of silver nanowires are also discussed.     

Template induced sol-gel synthesis of highly ordered LaNiO3 nanowires

The highly ordered LaNiO₃ nanowires of the rare-earth perovskite-type composite oxide were controlled synthesized within a porous anodic aluminum oxide (AAO) template by means of sol-gel method using nitrate as raw materials and citric acid as chelating agent. The results of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) revealed that the obtained LaNiO₃ nanowires had a uniform length and diameter, which were determined by the thickness and the pore diameter of the applied AAO template. The results of X-ray diffraction (XRD) and the selected-area electron diffraction (SAED) indicated that the LaNiO₃ nanowires were perovskite-type crystalline structures. Furthermore, X-ray photoelectron spectroscopy (XPS) and the energy dispersive X-ray (EDX) spectroscopy demonstrated that the stoichiometric LaNiO₃ was formed.     

A Simple Hydrothermal Route to Large‐Scale Synthesis of Uniform Silver Nanowires

This paper describes the preparation of uniform silver nanowires by reducing freshly prepared silver chloride with glucose at 180 °C for 18 hours in the absence of any surfactants or polymers. Scanning electron microscopy studies indicated that the silver nanowires are about 100 nm in diameter and up to 500 μm in length. High‐resolution transmission electron microscopy analyses showed that the silver nanowires grow perpendicularly to the Ag(200) plane. The silver nanowires are believed to grow through a solid–solution–solid process. Some influential factors on the growth of silver nanowires are also discussed.     

CdSe纳米线阵列的制备及其表征(英)

通过在含有SeSO₃^2-和Cd²⁺的室温水溶液中，用模板-电沉积法在纳米孔阵列阳极氧化铝膜(AAM)模板中制备了高有序性的CdSe纳米线阵列，并对其形貌、结构和组分进行了表征。扫描电子显微镜(SEM)和透射电子显微镜(TEM)结果表明，纳米线阵列中的CdSe纳米线具有相同的长度和直径，分别对应于使用的AAM模板的厚度和孔径；X-射线衍射(XRD)和X-射线能谱(EDAX)结果表明，CdSe纳米线中Cd和Se的化学组成非常接近于1∶1，其结构为立方CdSe。另外，对模板-电沉积法制备CdSe纳米线的机理进行了讨论。     

Densely packed single-crystal Bi2Fe4O9 nanowires fabricated from a template-induced sol-gel route

Densely packed single-crystal Bi₂Fe₄O₉ nanowires were successfully synthesized by a template-induced citrate-based sol-gel process. The structural properties of the nanowires were characterized using many techniques. The results of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) revealed that Bi₂Fe₄O₉ nanowires possessed a uniform length and diameter, which were controlled by the thickness and the pore diameter of the applied porous anodic aluminum oxide (AAO) template, respectively. The results of X-ray diffraction (XRD) and the selected area electron diffraction (SAED) indicated that Bi₂Fe₄O₉ nanowires had an orthorhombic single-crystal structure. Furthermore, the energy-dispersive X-ray (EDX) spectroscopy demonstrated that the stoichiometric Bi₂Fe₄O₉ was formed. The possible formation mechanism of nanowires was also discussed.     

Solution synthesis of germanium nanowires using a Ge2+ alkoxide precursor

A simple solution synthesis of germanium (Ge0) nanowires under mild conditions (<400 degrees C and 1 atm) was demonstrated using germanium 2,6-dibutylphenoxide, Ge(DBP)2 (1), as the precursor where DBP = 2,6-OC6H3(C(CH3)3)2. Compound 1, synthesized from Ge(NR2)2 where R = SiMe3 and 2 equiv of DBP-H, was characterized as a mononuclear species by single-crystal X-ray diffraction. Dissolution of 1 in oleylamine, followed by rapid injection into a 1-octadecene solution heated to 300 degrees C under an atmosphere of Ar, led to the formation of Ge0 nanowires. The Ge0 nanowires were characterized by transmission electron microscopy (TEM), X-ray diffraction analysis, and Fourier transform infrared spectroscopy. These characterizations revealed that the nanowires are single crystalline in the cubic phase and coated with oleylamine surfactant. We also observed that the nanowire length (0.1-10 microm) increases with increasing temperature (285-315 degrees C) and time (5-60 min). Two growth mechanisms are proposed based on the TEM images intermittently taken during the growth process as a function of time: (1) self-seeding mechanism where one of two overlapping nanowires serves as a seed, while the other continues to grow as a wire; and (2) self-assembly mechanism where an aggregate of small rods (<50 nm in diameter) recrystallizes on the tip of a longer wire, extending its length.