共查询到19条相似文献,搜索用时 531 毫秒
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采用多孔氧化铝模板法, 通过四氰基对苯二醌二甲烷(TCNQ)与金属Ag的化学反应, 制备了银-四氰基对苯二醌二甲烷(AgTCNQ)纳米线阵列. AgTCNQ的直径由多孔氧化铝模板的内孔直径决定, 而其长度则可由反应时间与多孔氧化铝膜模板的厚度来控制. 所制备的AgTCNQ纳米线阵列表面光滑, 直径均一, 具有良好的场发射特性. 相似文献
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采用恒电流沉积方法, 在多孔阳极氧化铝(AAO)模板中制备出了具有单晶结构的Ni纳米线阵列. 采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射(XRD)技术对制备的Ni纳米线阵列的形貌及结构进行了表征. 利用振动样品磁强计(VSM)对单晶Ni纳米线阵列的磁性能进行了研究. 结果表明, 单晶镍纳米线阵列的易磁化方向为纳米线轴向, 并且与多晶纳米线相比显示出了更高的矫顽力. 直径为30 nm的纳米线具有较高的矫顽力(8.236×104 A/m)和较高的剩磁比(Mr=0.94Ms). 相似文献
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ZnO纳米线形态对其光致发光性能的影响 总被引:1,自引:0,他引:1
以多孔氧化铝膜为模板,电化学沉积出Zn纳米线,再通过高温氧化得到ZnO纳米线阵列。通过改变制备多孔氧化铝模板的工艺参数来改变模板纳米孔径,进而改变ZnO纳米线的直径,得到不同形态的ZnO纳米线阵列。应用X射线衍射仪、透射电子显微镜测试技术表征了ZnO纳米线的结构与形貌。结果发现,X射线衍射时会出现随ZnO纳米线直径增大衍射峰增多和增强的现象。采用荧光光谱仪测试样品的光致发光性能,通过Gaussian原理对谱峰的拟合分析了ZnO纳米线形态对其光致发光光谱的影响。结果表明,随着纳米线直径从30nm至60nm依次增大,其结晶性和化学计量比逐渐变好。近紫外区和蓝光区的发射峰随着纳米线直径的增大而蓝移,而纳米线直径为60nm的样品则出现随直径增大而红移的现象。结果可见,直径在55~60nm间的某点将是ZnO纳米线的结构和光致发光性能变化的临界点。 相似文献
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Semiconductor ZnTe nanowire arrays have been synthesized by the pulsed electrochemical deposition from aqueous solutions into porous anodic alumina membranes. X-ray diffraction analyses show that the as-synthesized nanowires have a highly preferential orientation. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy indicate that high-filling, ordered, and single-crystalline nanowire arrays have been obtained. The optical absorption spectra of the nanowire arrays show that the optical absorption band edge of the ZnTe nanowire array exhibits a blue shift compared with that of bulk ZnTe. The growth mechanism and the electrochemical deposition process are discussed together with the chemical compositions analysis. 相似文献
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Highly ordered quaternary semiconductor Cu(2)ZnSnS(4) nanowires array have been prepared via a facile solvothermal approach using anodic aluminum oxide (AAO) as a hard template. The as-prepared nanowires are uniform and single crystalline. They grow along either the crystalline [110] or [111] direction. The structure, morphology, composition, and optical absorption properties of the as-prepared Cu(2)ZnSnS(4) samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectrometry. A possible formation mechanism of the nanowire arrays is proposed. Governed by similar mechanism, we show that Cu(2)ZnSnSe(4) nanowire array with similar structural characteristics can also be obtained. 相似文献
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大面积Bi单晶纳米线阵列的制备 总被引:1,自引:1,他引:0
在有序的氧化铝模板(AAO)的孔洞中, 采用电化学沉积工艺成功地制备了准金属Bi纳米线有序阵列. 使用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)及高分辨电子显微镜(HRTEM)对样品的结构和形貌进行了表征. XRD结果表明, 所制备的铋样品为六方相, 且沿[110]方向有很好的生长取向; FE-SEM图片清晰地说明铋纳米线阵列是大面积、填充率高和高度有序的; TEM的结果显示纳米线直径均匀、表面光滑且长径比大; HRTEM图片中清晰的晶格条纹和选区电子衍射(SAED)结果表明纳米线是单晶. 相似文献
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Large-area ordered Ni nanowire arrays with different diameters have been fabricated by the direct current electrodeposition into the holes of porous anodic alumina membrane. The crystal structure and micrograph of nanowire arrays are characterized by X-ray diffraction, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. The results indicate that the growth orientation of Ni nanowires turns from [110] to [111] direction with increasing diameters of nanowires. The mechanism of the growth was discussed in terms of interface energy minimum principle. The size-dependent orientation of Ni nanowire arrays has the important significance for the design and control of nanostructures. 相似文献
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Fe-Co-Ni合金纳米线有序阵列的模板合成与磁性 总被引:10,自引:0,他引:10
以二次阳极氧化的氧化铝膜为模板,用电化学沉积的方法成功地合成了Fe-Co-Ni三组份有序纳米线阵列.扫描电子显微镜(SEM)和透射电子显微镜(TEM)观察表明纳米线表面光滑、有序、高长径比;磁性测量表明,其矫顽力较同组份的膜材料有较大的提高.将样品在惰性气体氛围中不同温度下退火,随着退火温度增加,其纵向矫顽力有一个极值,而对应的横向矫顽力没有类似的变化,关于这一现象的机理,本文进行了初步的讨论. 图5参15 相似文献
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采用脉冲电沉积结合阳极氧化铝模板技术制备了不同生长方向的闪锌矿型InSb纳米线阵列. 结果表明, 控制电解液中十二烷基硫酸钠(SDS)的浓度, 可使纳米线的择优生长方向从[400]向[220]方向转变. 利用X射线衍射仪、 场发射扫描电子显微镜、 高分辨透射电子显微镜对所制备纳米线的相组成和微结构进行了表征. 激光拉曼光谱结果表明, 不同生长方向的InSb纳米线阵列的拉曼光谱有明显差异. 与体材料相比, InSb纳米线阵列的红外吸收声子散射峰发生强烈红移, 其吸收带边发生了明显蓝移. 相似文献
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利用电化学沉积方法在重离子径迹模板中制备出直径从45 nm到200 nm, 长径比达700的金纳米线阵列, 利用扫描电子显微镜(SEM)和X射线衍射(XRD)对所制备金纳米线的形貌及晶体结构进行分析, 结果表明, 在1.5 V(无参比电极)沉积电压下所制备出的直径为200 nm金纳米线沿[100]晶向具有较好择优取向. 利用紫外-可见光谱(UV-Vis)对镶嵌在透明模板中平行排列的金纳米线阵列光学特性进行研究, 发现金纳米线直径为45 nm时, 其紫外可见光谱在539 nm处有强烈吸收峰, 随着金纳米线直径增加, 吸收峰红移, 当金纳米线直径达到200 nm时, 其吸收峰峰位移至700 nm. 结合金纳米颗粒相关表面等离子体共振吸收效应对实验结果进行了讨论. 相似文献
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Large-area highly-oriented SiC nanowire arrays: synthesis, Raman, and photoluminescence properties 总被引:1,自引:0,他引:1
Large-area highly oriented SiC nanowire arrays have been fabricated by chemical vapor reaction using an ordered nanoporous anodic aluminum oxide (AAO) template and a graphite reaction cell. Their microstructures were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that the nanowires are single-crystalline beta-SiC's with diameters of about 30-60 nm and lengths of about 8 microm, which are parallel to each other, uniformly distributed, highly oriented, and in agreement with the nanopore diameter of the applied AAO template. The nanowire axes lie along the [111] direction and possess a high density of planar defects. Some unique optical properties are found in the Raman spectroscopy and photoluminescence emission from oriented SiC nanowire arrays, which are different from previous observations of SiC materials. The growth mechanism of oriented SiC nanowire arrays is also analyzed and discussed. 相似文献