A two-component model for the electron distribution function in ahigh-current pseudospark or back-lighted thyratron

Temperature, energy, and densities of two electron distribution function components, including an isotropic bulk part and an anisotropic beam, are analyzed for a hydrogen pseudospark and/or back-lighted thyratron switch plasma with a peak electron density of 1-3×10¹⁵ cm^-3 and peak current density of ≈10⁴ A/cm². Estimates of a very small cathode-fall width during the conduction phase and high electric field strengths lead to the injection of an electron beam with energies ⩾100 eV and density of 10¹³-10¹⁴ cm^-3 into a Maxwellian bulk plasma. Collisional and radiative processes of monoenergetic beam electrons, bulk plasma electrons and ions, and atomic hydrogen are modeled by a set of rate equations, and line intensity ratios are compared with measurements. Under these high-current conditions, for an initial density n_H2=10¹⁶ cm^-3 and electron temperature of 0.8-1 eV, the estimated beam density is ≈10¹³ -10¹⁴ cm^-3. These results suggest the possibility of producing in a simple way a very high-density electron beam     

A cold thermionically emitting dusty air plasma formed by radiativeheating of graphite particulates

Formation of an atmospheric pressure dusty air plasma is explored experimentally in this paper. The plasma is created by seeding an air flow with graphite particles and irradiating the particulates with a focused CO₂ laser beam. The graphite particles are, thus, heated to thermionically emitting temperatures, and average particle temperatures and average particle number densities are measured. The presence of charges is inferred both from these measured quantities using a simple theoretical transient model, and experimentally by applying a dc bias across the irradiated region. It is found that an electron density of ~6.7 × 10⁵ cm^-3 (6.7 × 10¹¹ m^-3) can be produced at steady state in the presence of O₂. This value can be increased to 3.6 × 10⁷ cm^-3 (3.6 × 10¹³ m ^-1) in the ideal case where an electron attachment to O₂ is suppressed and where a lower work function particulate is used     

温稠密钛电导率计算

温稠密物质是惯性约束核聚变、重离子聚变、Z箍缩动作过程中物质发展和存在的重要阶段. 其热力学性质和辐射输运参数在聚变实验和内爆驱动力学模拟过程中有至关重要的作用. 本文通过建立非理想Saha方程, 结合线性混合规则的理论方法模拟了温稠密钛从10^-5-10 g·cm^-3, 10⁴ K到3×10⁴ K区间的粒子组分分布和电导率随温度密度的变化, 其中粒子组分分布由非理想Saha方程求解得到. 线性混合规则模型计算温稠密钛的电导率时考虑了包括电子、原子和离子之间的多种相互作用. 钛的电导率的计算结果与已有的爆炸丝实验数据相符. 通过电导率随温度密度变化趋势判断, 钛在整个温度区间, 密度0.56 g·cm^-3时发生非金属相到金属相相变. 对于简并系数和耦合系数的计算分析, 钛等离子体在整个温度和密度区间逐渐从弱耦合、非简并状态过渡到强耦合部分简并态.     

Validity conditions for complete and partial local thermodynamicequilibrium of nonhydrogenic level systems and their application tocopper vapor arcs in vacuum

Validity conditions for complete and partial local thermodynamic equilibrium (CLTE and PLTE) of homogeneous, time-dependent, and optically thin plasmas are derived. For Cu I, electron densities of n_e⩾(5×10²²-5×10²³ ) m^-3 are required for the establishment of CLTE. For Cu I and Cu II, n_e⩾(5×10²¹-5×10²¹ -5×10²²) m^-3 is necessary for PLTE (for electron temperatures of 1-2 eV). Application to low-current copper vapor arcs in vacuum shows that CLTE can be expected for r<200-600 μm (r=distance from the cathode spot). A further limitation follows for temperatures of 2 eV or higher if diffusion effects are taken into consideration. Consequently, the use of the LTE formulas in plasma spectroscopy of low-current vacuum arcs is very limited     

LaTiO高k栅介质Ge MOS电容电特性及Ti含量优化

采用共反应溅射法将Ti添加到La_2O_3中,制备了LaTiO/Ge金属-氧化物-半导体电容,并就Ti含量对器件电特性的影响进行了仔细研究.由于Ti-基氧化物具有极高的介电常数,LaTiO栅介质能够获得高k值;然而由于界面/近界面缺陷随着Ti含量的升高而增加,添加Ti使界面质量恶化,进而使栅极漏电流增大、器件可靠性降低.因此,为了在器件电特性之间实现协调,对Ti含量进行优化显得尤为重要.就所研究的Ti/La_2O_3比率而言,18.4%的Ti/La_2O_3比率最合适.该比率导致器件呈现出高k值(22.7)、低D_(it)(5.5×10~(11)eV~(-1)·cm~(-2))、可接受的J_g(V_g=1V,J_g=7.1×10~(-3)A·cm~(-2))和良好的器件可靠性.     

Experimental study of a plasma-filled backward wave oscillator

Experimental studies of a plasma-filled X-band backward-wave oscillator (BWO) are presented. Depending on the background gas pressure, microwave frequency upshifts of up to 1 GHz appeared along with an enhancement by a factor of 7 in the total microwave power emission. The bandwidth of the microwave emission increased from ⩽0.5 GHz to 2 GHz when the BWO was working at the RF power enhancement pressure region. The RF power enhancement appeared over a much wider pressure range in a high beam current case (10-100 mT for 3 kA) than in a lower beam case (80-115 mT for 1.6 kA). The plasma-filled BWO has higher power output than the vacuum BWO over a broader region of magnetic guide field strength. Trivelpiece-Gould modes (T-G modes) are observed with frequencies up to the background plasma frequency in a plasma-filled BWO. Mode competition between the T-G modes and the X-band Tm₀₁ mode prevailed when the background plasma density was below 6×10¹¹ cm^-3 . At a critical background plasma density of ≃8×10¹¹ cm^-3 power enhancement appeared in both X-band and the T-G modes. Power enhancement of the S-band in this mode collaboration region reached up to 8 dB. Electric fields measured by the Stark-effect method were as high as 34 kV/cm while the BWO power level was 80 MW. These electric fields lasted throughout the high-power microwave pulse     

GeS分子基态和低激发态的势能曲线与光谱性质

本文以aug-cc-pv5Z为基组, 采用考虑Davidson修正的多参考组态相互作用方法(MRCI+Q)得到了GeS分子基态(X¹Σ⁺)和5个低激发态(1¹Σ, 1¹Δ, A¹Π, 1⁵Σ⁺, 2⁵Σ⁺)的势能曲线. 计算结果表明: 2⁵Σ⁺态为排斥态, 其余5个态为束缚态; 6个态有着共同的离解通道, 离解极限均为Ge(³P)+S(³P). 利用计算得到的势能曲线得了X¹Σ⁺, 1¹Σ^-, 1¹Δ, A¹Π和1⁵Σ⁺态的垂直跃迁能T_e, 平衡键长R_e, 离解能D_e, 谐振频率ω_e, 非谐性常数ω_ex_e及平衡位置的电偶极矩. X¹Σ⁺态的R_e 为2.034 Å, D_e 为5.728 eV, ω_e为571.73 cm^-1, ω_ex_e为1.6816 cm^-1, 平衡位置的电偶极矩为1.9593 Debye. 激发态1¹Σ, 1¹Δ, A¹Π, 1⁵Σ⁺的T_e 依次为25904.81, 26209.22, 32601.19, 43770.26 cm^-1; R_e依次为2.313, 2.322, 2.188, 2.8790 Å; D_e依次为2.524, 2.487, 1.694, 0.3036 eV, ω_e依次为358.90, 353.08, 376.32, 134.96 cm^-1; ω_ex_e依次为1.2421, 1.2151, 1.6608, 1.9095 cm^-1; 平衡位置的电偶极矩依次为1.3178, 1.4719, 1.5917, -1.9785 Debye. 通过求解核运动的薛定谔方程得到了J=0时X¹Σ⁺, 1¹Σ^-, 1¹Δ, A¹Π和1⁵Σ⁺态前30个振动态的振动能级G_v和分子常数B_v, 得到的结果和已有的实验值及其他理论值符合较好.     

The Two-Nucleon Mechanism for the Neutrinoless Double Beta Decay and the BCS Nuclear Wave Function

A method of using the Bardeen-Cooper-Schrieffer (BCS) nuclear wave function to treat the two-nucleon mechanism for neutiinoless double beta decay process 0⁺ → 0⁺ is proposed.The neutrinoless decay mode and the neutrinoless decay accompanied by a Majoron emission mode of ⁸²Se are studikd. Our cdculated results show that to reproduce the experimental value of γ^(ov) > 1.8 × 10²² yr for neutrinoless double beta decai of ⁸²Se the Majorana neutrino mass m_v < 6.2 eV and the mixing parameter of right-handed current η < 7.0 × 10^-6 In the emission with a Majoron mode the effective Majoron coupling to neutrino is deduced from the experimental value of γ^(ov,H) > 4.4 × 10²⁰ yr for ⁸²Se with the result H0> < 6.2 × 10^-4.     

梯度掺杂对n型异质结太阳能电池性能的影响

通过仿真软件AFORS-HET对a-Si:H(p)/i-a-Si:H/c-Si(n)异质结太阳能电池的光伏特性进行分析及优化,主要对比了a-Si:H(p)层的均匀掺杂和表面掺杂浓度D₁=1×10²⁰ cm^-3>界面掺杂浓度D₂=4×10¹⁹ cm^-3的梯度掺杂情况时的光伏特性,实现了在梯度掺杂时22.32%的光电转换效率。与均匀梯度掺杂相比,发射层的梯度掺杂除了引入一个附加电场,还优化了能带结构、光谱响应、表面复合速率。结果表明,梯度掺杂可以有效地改善电池的光电转换性能。     

Photo-ionized lithium source for plasma accelerator applications

A photo-ionized lithium source is developed for plasma acceleration applications. A homogeneous column of lithium neutral vapor with a density of 2×10^15-3 is confined by helium gas in a heat-pipe oven. A UV laser pulse ionizes the vapor. In this device, the length of the neutral vapor and plasma column is 25 cm. The plasma density was measured by laser interferometry in the visible on the lithium neutrals and by CO₂ laser interferometry on the plasma electrons. The maximum measured plasma density was 2.9×10 ¹⁴ cm^-3, limited by the available UV fluence (≈83 mJ/cm²), corresponding to a 15% ionization fraction. After ionization, the plasma density decreases by a factor of two in about 12 μs. These results show that such a plasma source is scaleable to lengths of the order of 1 m and should satisfy all the requirements for demonstrating the acceleration of electrons by 1 GeV in a 1-GeV/m amplitude plasma wake     

Application of multi-pulse optical imaging to measure evolution of laser-produced counter-streaming flows

A counter-streaming flow system is a test-bed to investigate the astrophysical collisionless shock(CS) formation in the laboratory. Electrostatic/electromagnetic instabilities, competitively growing in the system and exciting the CS formation, are sensitive to the flows parameters. One of the most important parameters is the velocity, determining what kind of instability contributes to the shock formation. Here we successfully measure the evolution of the counter-streaming flows within one shot using a multi-pulses imaging diagnostic technique. With the technique, the average velocity of the high-density-part(ne ≥ 8–9 × 10~(19)cm~(-3)) of the flow is directly measured to be of ～ 10~6cm/s between 7 ns and 17 ns.Meanwhile, the average velocity of the low-density-part(ne ≤ 2 × 10~(19)cm~(-3)) can be estimated as ～ 10~7cm/s. The experimental results show that a collisionless shock is formed during the low-density-part of the flow interacting with each other.     

VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE

Germanium ions were implanted into SiO₂ films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×10¹⁵ and 1×10¹⁶ cm^-2.Under an ultraviolet excitation of ～5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T₁→S₀ transition in GeO,which was formed during implantation and annealing process.     

基于旋涂法和电子束蒸发法制备的V2O5/Ag/V2O5叠层透明导电薄膜

利用溶胶-凝胶技术与电子束蒸镀相结合的方法在常温下制备了叠层V₂O₅/Ag/V₂O₅（VAV）透明导电薄膜,研究了各层薄膜厚度对叠层结构光电特性的影响。用原子力显微镜、紫外-可见光分光光度计、四探针电阻仪及开尔文探针对样品的表面形貌、光电性能及功函数等性质进行了表征。实验结果表明,该薄膜具有良好的光学和电学性质,可见光（380~780 nm）平均透过率达75%,迁移率为16.89 cm²/（V·s）,载流子浓度为－1.043×10²² cm^-3,方块电阻值为15.1 Ω/□,功函数为5.17 eV。该制备方法降低了V₂O₅薄膜的工艺制备难度,为该材料在太阳能电池中的应用创造了良好的前期基础。     

铒离子注入绝缘体上Si的射程分布研究

利用离子注入掺杂技术设计、制作半导体集成器件时,了解离子注入半导体材料的射程分布和横向离散规律等是很重要的.用200—500 keV能量的铒(Er)离子注入SOI(silicon-on-insulator,绝缘体上的硅)样品中,利用卢瑟福背散射(RBS)技术研究了剂量为2×1015cm-2的Er离子注入SOI的平均投影射程Rp和射程离散△Rp,把测出的实验值和SRIM软件得到的理论计算值进行了比较,发现平均投影射程Rp的实验值跟理论计算值符合较好,射程离散△Rp的实验值和理论计算值差别大一些.     

Flashboard plasma characterization using spectroscopy

The plasma produced by a 10 cm×6 cm planar flashboard has been investigated by emission spectroscopy. The plasma composition, density, and temperature have been determined with time and space resolution using measurement of the relative intensity of spontaneous emission in different atomic and ionic transitions together with calculations based on a collisional-radiative equilibrium model. The (1-2)×10¹³ cm^-3 and (3-4) eV plasma flows away from the flashboard surface at a speed of about 10 cm/μs. A 1.7 cm/μs transverse velocity has been obtained from the Doppler width of an emission line     

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The multichannel bremsstrahlung measurement system on HL-2A tokamak has been using to observe the intensity of visible (535.1nm) bremsstrahlung radiation. Combined the intensity with plasma electron density and electron temperature, the effective ion charge measurements can be obtained on HL-2A tokamak. The 1×10¹⁹m⁻³ to4×10¹⁹m⁻³ experimental results show that when the plasma electron density increases from 1×10 m to 4×10 m , the effective ion charge number changes from 5 down to around 2. The bremsstrahlung radiation signal intensity is proportional to the quadratic plasma density. When the electron density is higher than 3×10¹⁹m⁻³, the multichannel bremsstrahlung measurement system can collect sufficient signal through the plasma, which enables the measurement of effective ion charge radial profile.     

A simulation study on p-doping level of polymer host material in P3HT:PCBM bulk heterojunction solar cells

In this study,we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene)(P3HT) and a methanofuUerene derivative(PCBM).Organic semiconductors are also known to be not pure and they have defects and impurities,some of them are being charged and act as p-type or n-type dopants.Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings(N_d) that consist of 5 × 10~(17) cm~(-3),10~(18) cm~(-3),and 5 × 10~(18) cm~(-3).We perform the analysis of the doping concentration through the drift-diffusion model,and calculate the current and voltage doping dependency.We find that at three different n-dopant levels,optimum p-type doping is about N_p = 6 × 10~(18) cm~(-3).Simulation results have shown that by increasing doping level,V_(oc) monotonically increases by doping.Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at N_p = 3 × 10~(18) cm~(-3).Moreover,this paper demonstrates that the optimum value for the p-doping is about N_p = 6 × 10~(18) cm~(-3) and optimum value for n-dopant is N_d = 10~(18) cm~(-3),respectively.The simulated results confirm that doping considerably affects the performance of organic solar cells.     

Argon ion stimulated conversion between CFx (x = 0–3) chemical states and fluorine depletion in fluorocarbon films studied by X-ray photoelectron spectroscopy

Surface chemical composition of fluorocarbon films deposited onto indium-tin-oxide (ITO) substrates was modified by 2.0 keV Ar⁺ irradiation with doses of up to 2.6×10¹³ ions/cm². The effect of ion irradiation on the chemical composition and bonding configuration of the upper-surface and sub-surface regions were monitored by high-resolution angle-resolved X-ray photoelectron spectroscopy (AR-XPS). It was found that the as-deposited films compose of a distribution of CF, CF₂, CF₃ and C–C chemical states. C 1s line-shape analysis of XPS spectra measured at grazing and normal emission angles shows that as a result of the irradiation, the population of the CF₃ and CF₂ chemical states were preferentially depleted from the film’s surface resulting in an increased population of the CF and C–C chemical states in the upper-surface region of the film. It is suggested that low energy ion irradiation can be used to chemically modify the surface of fluorocarbon films.     

Ion beam enhanced deposition of AINxOy alloys on InP

AIN_xO_y alloy films are deposited on InP by low energy (20 eV) ion beam enhanced reactive evaporation of aluminum in ultra-high vacuum. The resistivity of the films ranges between 10¹⁵ and 10¹⁶ Ω cm and the dielectric strength exceeds 10⁶ V/cm. The energy of the ions is kept below the threshold energy (found to be in the range 20–100 eV) beyond which ion bombardment of InP surface results in irreversibly degraded electronic properties. Despite this precaution, further improvement of interface properties (implying lowering of ion energy and appropriate post-annealing schemes of the structures) are required for a full development of this technique, which is compatible with the molecular beam epitaxy technology.     

Reversible H2 passivation of Si ≡ Si3 interface defects in (1 1 1)Si/SiO2

K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between [1 1 1]P_b centers (^*Si ≡ Si₃ defects with unpaired sp³ hybrid [1 1 1]) at the 2 dimensional (1 1 1)Si/SiO₂ interface. This has been enabled by the perfectly reversible H₂ passivation of P_b, which affects the defect's spin state. Sequential hydrogenation at 253–353°C and degassing treatments in high vacuum at 743–835°C allowed to vary the P_b density in the range 5 × 10¹⁰ < [P_b] (1.14 ± 0.06) × 10¹³ cm^-2. With increasing [P_b] fine structure doublets are clearly resolved. It is found that (1 1 1)Si/SiO₂ interfaces, dry thermally grown at ≈920°C, naturally comprise a ^*Si ≡ Si₃ defect density — passivated or not — of 1.14 × 10¹³ cm^-2.