VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE

Germanium ions were implanted into SiO₂ films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×10¹⁵ and 1×10¹⁶ cm^-2.Under an ultraviolet excitation of ～5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T₁→S₀ transition in GeO,which was formed during implantation and annealing process.     

PECVD纳米晶粒硅薄膜的可见电致发光

在用等离子体增强化学汽相淀积的嵌有纳米晶粒硅薄膜中观测到电致发光．发光谱处在500—800nm之间，它有两个分别位于630—680nm和730nm附近的峰，两个峰的强度与薄膜的电导率有密切关系．根据这种材料的结构特性对载流子的传导通道进行了讨论，并且对发光机制进行了初步解释 关键词：     

VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE

Germanium ions were implanted into SiO₂ films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×10¹⁵ and 1×10¹⁶ cm^-2.Under an ultraviolet excitation of ～5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T₁→S₀ transition in GeO,which was formed during implantation and annealing process.     

Si∶H∶O薄膜的室温强紫外光致发光

用等离子体增强辉光放电法制成a-Si∶H∶O薄膜,未经任何后处理过程,观察到峰值分别位于340—370,400—430以及740nm的三个光致发光(PL)带.这种紫外光发射既强又稳定,其强度与薄膜中的氧含量紧密相关,而后者可通过薄膜淀积过程中施加在其衬底上的直流偏压进行控制.前两个PL峰来源于a-Si∶H∶O中与氧有关的色心,而后一个PL峰则来源于嵌入a-Si∶H∶O中纳米硅晶粒的量子尺寸效应和晶粒表面的色心两方面的作用.