VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE

Germanium ions were implanted into SiO₂ films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×10¹⁵ and 1×10¹⁶ cm^-2.Under an ultraviolet excitation of ～5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T₁→S₀ transition in GeO,which was formed during implantation and annealing process.     

VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE

Germanium ions were implanted into SiO₂ films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×10¹⁵ and 1×10¹⁶ cm^-2.Under an ultraviolet excitation of ～5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T₁→S₀ transition in GeO,which was formed during implantation and annealing process.