Discharge characteristics of the DUHOCAMIS with a high magnetic bottle-shaped field

For the purpose of producing high intensity, multiply charged metal ion beams, the dual hollow cathode ion source for metal ions （DUHOCAMIS） was derived from the hot cathode Penning ion source combined with the hollow cathode sputtering experiments in 2007. To investigate the behavior of this discharge geometry in a stronger magnetic bottle-shaped field, a new test bench for DUHOCAMIS with a high magnetic bottle-shaped field up to 0.6 T has been set up at the Peking University. The experiments with magnetic fields from 0.13 T to 0.52 T have indicated that the discharge behavior is very sensitive to the magnetic flux densities. The slope of discharge curves in a very wide range can be controlled by changing the magnetic field as well as regulated by adjusting the cathode heating power; the production of metallic ions would be much greater than gas ions with the increased magnetic flux density; and the magnetic field has a much higher influence on the DHCD mode than on the PIG mode.     

Discharge characteristics of the DUHOCAMIS with a high magnetic bottle-shaped field

For the purpose of producing high intensity, multiply charged metal ion beams, the dual hollow cathode ion source for metal ions (DUHOCAMIS) was derived from the hot cathode Penning ion source combined with the hollow cathode sputtering experiments in 2007. To investigate the behavior of this discharge geometry in a stronger magnetic bottle-shaped field, a new test bench for DUHOCAMIS with a high magnetic bottle-shaped field up to 0.6 T has been set up at the Peking University. The experiments with magnetic fields from 0.13 T to 0.52 T have indicated that the discharge behavior is very sensitive to the magnetic flux densities. The slope of discharge curves in a very wide range can be controlled by changing the magnetic field as well as regulated by adjusting the cathode heating power; the production of metallic ions would be much greater than gas ions with the increased magnetic flux density; and the magnetic field has a much higher influence on the DHCD mode than on the PIG mode.     

LAPECR2离子源在320kV高压平台上的试运行

The high charge state all permanent Electron Cyclotron Resonance Ion Source(ECRIS)LAPECR2 (Lanzhou All Permanent magnet ECR ion source No.2)has been successfully put on the 320kV HV platform at IMP and also has been connected with the successive LEBT system.This source is the largest and heaviest all permanent magnet ECRIS in the world.The maximum mirror field is 1.28T(without iron plug)and the effective plasma chamber volume is as large as (?)67mm×255mm.It was designed to be operated at 14.5GHz and aimed to produce medium charge state and high charge state gaseous and also metallic ion beams.The source has already successfully delivered some intense gaseous ion beams to successive experimental terminals.This paper will give a brief overview of the basic features of this permanent magnet ECRIS.Then commissioning results of this source on the platform,the design of the extraction system together with the successive LEBT system will be presented.     

Emittance Measurements for Beams Extracted from LECR3 Ion Source

High quality ion beams are required by IMP cyclotron and atomic physics research, so it is important to research and measure beam emitt ance of ECR ion source. Intense beams extracted from ECR ion source usually have low energy, so it is suitable to use Electric-Sweep Scanner to measure the emittance. This kind of measurement is popularly used at ECR ion source, and it has some prominent merits such as high accuracy, very short time of data processing and easy expressing of the emittance pattern. So we designed and built this emittance scanner to measure emittance of the ion beams produced by LECR3 ion source. The structure of the ESS is shown in Fig.l, and the photo of the ESS is shown in Fig.2.     

为IBA C70回旋加速器设计研制的采用Cusp场型H-离子源与产生He束的ECR离子源的双束轴向注入系统

At the moment,a 70MeV cyclotron is under construction by the IBA company.This cyclotron will be able to accelerate H~- beam from a multicusp source and with a beam intensity in the range of 10mA at the source extraction.A He~(1 2 ) beam is also required.This beam will be produced by a PANTECHNIK ECR ion source(SUPERNANOGAN)with an extracted current of 1 to 2mA.In this paper the studies and design of the two sources with a common axial injection in the cyclotron are described.     

近物所在产生金属离子束方面的研究

Since 1998,many experiments for metallic ion production have been done on LECR2(Lanzhou ECR ion source NO.2),LECR3(Lanzhou ECR ion source NO.3)and SECRAL(Superconductiong ECB ion source Advanced design in Lanzhou)at Institute of Modern Physics.The very heavy metallic ion beams such as those of uranium were also produced by the plasma sputtering method,and supplied for HIRFL(Heavy Ion Research Facility in Lanzhou)accelerators successfully.During the test,11.SeμAU~(28 ),9eμAU~(24 ) were obtained.Some ion beams of the metal having lower melting temperature such as Ni and Mg ion beams were produced by oven method on LECR3 too.The consumption rate was controlled to be lower for ~(26)Mg ion beams production,and the minimum consumption was about 0.3mg per hour.In this paper,the main experimental results are given.Some discussions are made for some experimental phenomena and results,and some conclusions are drawn.     

Analyzing Affect of Image Charge in Space Charge Effect

There is an increasing requirement of high injection current and highly charged ion beams for accelerators at many laboratories, such as CERN, GSI, GANIL and IMP, with the development of super-conducting ECR source in recent.years. In this case, the space charge effect becomes a major concern when the beam current is as high as tens of mA. In fact, the faradic field induced by the image charges will be come into the metallic surfaces while the beams are transported in a vacuum tube or in between two plates. In order to ensure studying the space charge effect in reason, it is necessary to investigate the effect from such a field.     

Simulation of ion beam extraction and focusing system

The characteristics of ion beam extraction and focused to a volume as small as possible were investigated with the aid of computer code SIMION 3D version 7. This has been used to evaluate the extraction characteristics (accel-decel system) to generate an ion beam with low beam emittance and high brightness. The simulation process can provide a good study for optimizing the extraction and focusing system of the ion beam without any losses and transported to the required target. Also, a study of a simulation model for the extraction system of the ion source was used to describe the possible plasma boundary curvatures during the ion extraction that may be affected by the change in an extraction potential with a constant plasma density meniscus.     

VENUS离子源的最新结果(28GHz)

The nest generation, superconducting ECR ion source VENUS (Versatile ECR ion source for Nuclear Science) has operated with 28GHz since 2004,and has produced world record ion beam intesities. The VENUS project is focused on two main objectives. First, for the 88-Inch Cyclotron,VENUS will serve as the third injector soures boosting both the energy and itensity of beams available form the facility.Seconly,VENUS also serves as the prototype injector source for a high intensity heavy ion beam driver linac for a next generation radioactive ion beam facility, where the goal is to produce intense beams of medium to low charge states ions such as 240eμA of Xe 20 or 250eμA of U28 to 34 . These high intensity ion beam requerements present a challenge for the beam transport system since the total currents extracte from the ECR ion source reach several mA. Therefore in parallel to io beam develoments,we are also enhancing our ion beam diagnostics devices and are conducting an extensive ion beam simulation effort to improve the understanding of the ion beam ransprot form the VENUS ECR ion source. The paper will give an overview of recent experiments with the VENUS ECR ion source. Since the last ECR ion source workshop in Berkeley in 2004.we have installed a new plasma chamber,which includes X-ray shielding.This enables us to operate the source reliably at high power 28GHz operation.With this new chamber several high intensity beams(such as 2.4mA ofO6 ,600eμA of Ar9 ,etc.) have been produced. In addition, we have started the developent of high intensity uranium beams. For example, 200eμA of U33 and U34 have been produced so far. In respect to high charge state ions,leμA of Ar18 ,133eμA of Ar16 ,and 4.9eμA of U47 have been measured. In addition,ion beam profile meaurements are presented with ,and without the sextupole magnetic field energized. These expeerimental results are being compared with simulations using the WARP code.     

Modelling and Optimization for Deposition of SiOxNy Films by Radio-Frequency Reactive Sputtering

SiOxNy films are deposited by reactive sputtering from a Si target in Ar/O2/N2 atmospheres. In order to achieve the control of film composition and to keep a high deposition rate at the same time, a new sputtering model based on Berg＇s work is provided for the condition of double reactive gases. Analysis based on this model shows that the deposition process can easily enter the target-poisoning mode when the preset gas flow （N2 in this work） is too high, and the film composition will change from nitrogen-rich to SiO2-like with the increase of oxygen supply while keeping the N2 supply constant. The modelling results are confirmed in the deposition process of SiOxNy. Target self-bias voltages during sputtering are measured to characterize the different sputtering modes. FTIR-spectra and dielectric measurements are used to testify the model prediction of composition. Finally, an optimized sputtering condition is selected with the O2/N2 flow ratio varying from 0 to I and N2 supply fixed at I sccm. Average deposition rate of 17nm/min is obtained under this selected condition, which has suggested the model validity and potential for industry applications.     

高电荷态离子207Pb36+与金属Nb表面作用产生的二次离子产额

本文报道了利用兰州重离子加速器国家实验室的ECR离子源引出的高电荷态离子207Pb36 入射到金属Nb表面产生的二次离子的实验测量结果.实验发现,二次离子产额Y随入射初动能Ek的增加有先增加后减小的关系,在初动能为576 keV时二次离子产额达到最大.通过对实验点做高斯拟合发现,曲线峰值对应的入射初动能为602 keV.分析表明,这是势能沉积作用与线性级联碰撞过程协同作用的结果.高电荷态离子本身携带的高势能沉积在靶表面引起势能溅射,促进了二次离子的发射;而主导二次离子溅射的过程是动能溅射,它与靶表面的动量沉积(核能损)过程密切相关.     

NSCL/MSU ECR离子源项目进展报告

Since the last ECR Workshop,NSCL/MSU has been involved in a vigorous ECR ion source R&D program,which resulted in the construction of an off-line test ECR ion source(ARTEMIS-B)for new beam development and ion optics studies.Also the design and partial completion of a 3rd generation,fully superconducting ECR ion source,SuSI has been accomplished.This paper is an overview of the construction projects and the different R&D activities performed with the existing ion sources.These activities include development of metallic ion beam production methods using evaporation with resistive and inductive ovens and sputtering of very refractory metals.Ion optics developments include testing different focusing elements(magnetic solenoid lens,electrostatic quadrupole triplet lens,Einzel lens,electrostatic double doublet quadrupole combined with an octupole lens),and different beam forming and diagnostics devices.The detailed results will be presented at the workshop in separate talks and posters.     

Joint functioning of a magnetron sputtering system and an end-hall ion source

The features of joint operation of a magnetron sputtering system (MSS) and an end-Hall ion source (EHIS) are investigated. It is noted that the initiation of the magnetron discharge leads to partial or complete neutralization of the ion beam generated by the EHIS; in other words, in some regimes of the MSS, the ion source operates in the filament-free regime. In such a case, the magnetron discharge is the source of electrons required for sustaining the discharge and for compensating the ion beam from the EHIS. The dependences of the discharge characteristics of the EHIS and MSS are established when a filament neutralizer and MSS discharge are used for compensating the EHIS ion beam. The balance of currents in the ion source-magnetron sputtering system is considered by analyzing the joint functioning of the MSS and EHIS. It is shown that the maximal discharge current from the ion source for which the charge compensation condition is preserved depends on the unbalance and the magnetron discharge current.     

高压耦合高功率脉冲磁控溅射的增强放电效应

等离子体源离子注入与沉积技术作为一种可生产高结合力、高致密度涂层的真空镀膜技术,具有广阔的应用前景,尤其适用于高载荷工况下服役的功能涂层制备.该技术中金属等离子体源是关键,而现有的脉冲阴极弧源结构复杂,且由于伴随"金属液滴"而需要增加过滤装置.本文研究了另一种简单结构的金属等离子体源备选一高功率脉冲磁控溅射源(HPPMS)的放电特性,采用等离子体发射光谱仪探索了不同的耦合高压对HPPMS放电靶电流特性和等离子体特性的作用.发现耦合高压对HPPMS放电有明显的促进作用,相同靶电压下的放电强度大幅增加,相对于金属放电,耦合高压对气体放电的促进作用更加明显,但在自溅射为主的高压放电阶段对金属放电的促进作用明显增强.讨论了耦合高压对HPPMS放电的增强机制,发现耦合高压自辉光放电、耦合高压和HPPMS电压构成双向负压形成的空心阴极效应,以及耦合高压鞘层改善的双极扩散效应都对HPPMS放电的增强有明显作用.     

Origin of Initial Current Peak in High Power Impulse Magnetron Sputtering and Verification by Non-Sputtering Discharge

A non-sputtering discharge is utilized to verify the effect of replacement of gas ions by metallic ions and consequent decrease in the secondary electron emission coefficient in the discharge current curves in high-power impulse magnetron sputtering(HiPIMS).In the non-sputtering discharge involving hydrogen,replacement of ions is avoided while the rarefaction still contributes.The initial peak and ensuing decay disappear and all the discharge current curves show a similar feature as the HiPIMS discharge of materials with low sputtering yields such as carbon.The results demonstrate the key effect of ion replacement during sputtering.     

双离子束溅射淀积DLC膜的红外特性

用双离子束溅射法在50℃以下的玻璃基片上淀积了类金刚石碳(DLC)膜.研究了轰击离子能量、轰击离子束流密度及轰击源内氢/氩流量比例对淀积片红外透射特性的影响.所用波段是1.5～5.5μm.结果表明,对所有淀积样片,其相对透过率均随波长增长而增大.在每组实验中,随如上各可变参量的增大,各样片的相对透过率～波长曲线均有先上升后下降的规律.确定了各组相应的临界参数.结果还表明,轰击源不含氢并不影响DLC膜的制取,但轰击源合氢时所制得的膜具有更好的红外透射性.从结构变化的角度解释了上述规律.     

Secondary ion emission from polymer layers by atomic and molecular ion bombardment: Data evaluation based on linear-cascade sputtering theory

This paper constitutes an attempt to rationalise impact-energy dependent yields of molecular secondary ions emitted from polymer samples under bombardment with atomic and molecular primary ions. The evaluation was based upon a comparison with sputtering yields calculated from linear-cascade sputtering theory, including threshold effects. To explore general trends, sputtering yields for carbon, silicon and silver were calculated under impact of normally incident C, F, S, Ga, Xe, Au, SF₅, C_11, C₆₀ and Au₅. The yields of carbon, for example, bombarded with C₆₀ are larger than for Ga by factors of ∼5 and ∼10 at 10 and 100 keV, respectively. However, owing to the fact that the effective threshold energy for sputtering increases with the number of constituents of the projectile, the yields for molecular ion impact start to exceed the yields for atomic ions only at energies between 0.5 and 5 keV. The analysed experimental results relate to molecular ion emission from one monolayer (1 ML) and 9 ML films of polymethacrylate on silver bombarded with Xe and SF₅ ions at energies E between 0.5 and 10 keV. Comparison of (initial) secondary ion yields S⁺ (m/z 143) with calculated sputtering yields suggests that S⁺ constitutes the sum of two contributions. The first, labelled , prevails at low energies and appears to reflect molecule ejection due to the mean effect of nuclear energy deposition (“ordinary” linear-cascade sputtering). The second contribution, , dominates at E > 1.5 keV, increases with a high power of E, but does not correlate with the calculated sputtering yield. It is suggested that is a measure of those impact events which occasionally generate a very high energy density at the surface, thus providing optimum conditions for very efficient ejection of molecules that are located at the rim of the agitated area. The SF₅/Xe secondary ion yield ratios are distinctly different for the two contributions, only about 0.3 for but ∼4 (1 ML) and ∼20 (9 ML) for . The pronounced secondary ion “yield enhancement” frequently reported in the literature for molecular versus atomic ion bombardment appears to be due to an enlargement of the contribution, more so the higher the impact energy and the more massive the projectile. The total (integrated) secondary ion yields, estimated by making use of the reported damage cross sections, were found to be the same for SF₅ bombardment of the 1-ML and the 9-ML samples. This finding calls for more attention towards obtaining high secondary ion yields at minimum sample consumption.