高功率脉冲磁控溅射的阶段性放电特征

本文从放电靶电流出发,采用一种新的研究方法,即将靶电流分解为多个代表具体放电特性的特征参数,全面而系统的研究了不同的工作气压条件下,靶电流各特征参数随靶电压的增加而进行的演化.结果发现高功率脉冲磁控溅射技术(HPPMS)放电靶电流在靶电压由低向高增加的过程中,出现靶电流峰值和平台值的交替变化,体现出明显的阶段性放电特征,且不同的放电阶段在不同气压下出现一定的移动,会在测量范围内出现某些放电阶段的缺失.本文还通过等离子体发射光谱对HPPMS放电靶前等离子体测量发现五个不同的放电阶段分别主要对应氩原子、铬原子、氩离子、铬离子和氩、铬高价离子的放电,但不同的放电条件下相邻的阶段会出现一定程度的交叠.     

筒内高功率脉冲磁控放电的电磁控制与优化

高功率脉冲磁控溅射(Hi PIMS)技术被提出以来就受到广泛关注,其较高的溅射材料离化率结合适当的电磁控制,可产生高致密度、高结合力和高综合性能的涂层,但其沉积速率低、放电不稳定、溅射材料离化率差异较大.我们设计了一种筒形溅射源,通过对结构的设计优化,利用类空心阴极放电效应,使问题得到解决.然而其靶面切向磁场不均匀,电子逃逸严重,进而造成等离子体密度偏低,且放电不均匀.本文通过对其放电和等离子体分布进行仿真,提出电场阻挡和磁铁补偿两种方案,研究了不同电场控制条件下的放电行为和等离子体分布.结果表明:增加电子阻挡屏极可以生成势阱,从而有效抑制电子从边缘的逸出;优化后的磁铁补偿可以显著提高靶面横向磁场的均匀性及靶面利用率.两种方案同时作用时,Hi PIMS放电刻蚀环面积更大、且更加均匀.     

工业X光二极管重复频率实验研究

工业X光二极管型单焦点高重复频率闪光X光机在科学研究、工业检测等领域具有重要应用前景。基于光导开关脉冲驱动源开展了金属阴极工业X光二极管重复频率运行实验, 采用烘烤处理方法研究阴极表面吸附特性对重复频率发射特性的影响;以二极管阻抗模型为理论基础, 通过重复频率实验获得的二极管电压维持时间和阻抗特性分析等离子体扩散过程。研究表明:对于高阻抗结构工业X光二极管, 金属阴极为表面吸附杂质或气体解吸附形成等离子体发射机制, 一次放电后阴极表面对气体的再吸附过程限制了其在高重复频率条件下的电流发射能力, 同时由于阴极等离子体扩散过程变慢使得二极管电压脉宽变长。具有高重复频率电流发射能力的阴极是发展单焦点重复频率X光机的基础。     

大气压双频氦气放电等离子体特性的数值研究

用一维流体模型研究了大气压双频氦气放电等离子体的特性。数值模拟的结果表明,在单、双频放电中,随着应用电压的增加,电子密度和放电电流都增加。相对于单频放电,双频放电中低频源的耦合效应使得放电中的电流以及电子密度降低。随着低频源电压峰值的增加,电子密度降低,离子通量,电子损失能量以及电子吸收能量均降低;但电子温度和电势随着低频源电压峰值的增加而增加。在相同低频源电压下,随着高频源电压的增加离子流非线性增加。     

高电流低气压等离子体阴极电子枪设计与实验

 设计了一种新型的高功率低气压等离子体电子枪。基于空心阴极效应和低压辉光放电原理与经验，确定了空心阴极、加速间隙、工作气压范围等。提出关于等离子体阴极电子枪产生高功率、高密度电子束源的整体方案。分别在连续馈气和脉冲馈气条件下进行实验测试，得到放电电流、收集极电流与气压、脉宽及调制器电压的关系。实验获得电子枪的典型放电电流为150~200 A，脉宽60 μs；传输电子束达到30~80 A，脉宽60 μs。该结果表明该新型等离子体阴极电子枪可以取代材料阴极作为大电流、长脉冲电子束源，特别适用于等离子体加载微波管。     

直流电源耦合高功率脉冲非平衡磁控溅射电离特性

采用直流电源放电形成高功率脉冲非平衡磁控溅射(dc-high power impulse unbalanced magnetron sputtering,dc-HPPUMS 或dc-HiPiUMS),利用雪崩放电的击穿机理形成深度自触发放电,同轴线圈和空心阴极控制放电特性和提高功率密度.磁阱俘获雪崩放电形成的二次电子和形成漂移电流,形成了大电流脉冲放电,放电脉冲电流密度峰值超过100 A/cm²,脉冲频率小于40 Hz.由于放电等离子体远没有达到平衡状态,放电电流主要受到空间电荷效应 关键词： 放电 脉冲技术     

脉冲放电射流辅助射频辉光放电研究

通过实验研究了脉冲放电射流辅助下大气压氦气射频辉光放电的电学和光学特性。采用组合电极结构,在射频放电前段增加脉冲电极,脉冲放电产生的射流以等离子体子弹形式注入射频放电区域,主要研究脉冲射流辅助射频放电的电流电压曲线、最低放电维持电压、放电强度和空间结构时空分布。研究结果表明:等离子体子弹经过射频放电区域后,由于等离子体子弹引入的活性粒子,会使射频放电区域等离子体强度增强;而射频放电最低维持电压也从0.93 kV降低至0.43 kV。     

大气压氖气介质阻挡放电脉冲等离子射流特性

采用自行研制的低造价、小体积、可产生幅值0~35 kV、重复频率1 kHz的高压s脉冲电源,设计了一套以大气压氖气为工作气体的介质阻挡放电（DBD）等离子体射流源,通过测量并计算放电过程中的电压-电流波形、拍摄放电图像、光谱分析等手段,对电压幅值、气体流速对氖气等离子体射流特性的影响进行了研究。结果表明:s脉冲电源激励下大气压氖气DBD能产生锥状的等离子射流且其等离子强度适中;s脉冲电源电压幅值的快速上升,可在放电空间瞬间施加高的过电压,能有效促进放电功率、电子密度、电子激发温度和射流长度的增加;工作气体流速的增加使得放电功率、电子激发温度和电子密度减小,而射流长度变化很小;一定条件下,能形成长距离的射流。     

强脉冲激光照射HCD灯阴极产生的非共振光电效应

对强脉冲激光照射空阴极放电(HCD)灯阴极产生的非共振光电效应信号的瞬态波形和各种特性进行了实验研究和理论分析.结果表明,这一现象起因于放电灯阴极在强激光照射下的多光子光电发射,因而利用这一效应可以进行多光子光电效应的研究和测量某些放电等离子体参数.利用这一效应并能为解释脉冲光电流效应的机理提供有力的实验证据.     

靶材偏置低电压对激光等离子体诱导靶上电势信号的影响

针对激光等离子体在Cu靶上诱导产生的电势信号展开实验研究,主要讨论了靶材偏置低电压时对电势信号的影响. 实验结果表明,外加低电压时,靶上电势信号呈现单峰脉冲结构,且靶材偏置负压时为正脉冲,偏置正压时为负脉冲,脉冲幅值随偏置电压增大而增大. 通过对靶上电势信号演化特性的详细分析,从等离子体荷电效应出发,结合靶材偏压造成的电场效应成功解释了靶材偏压对靶上电势信号的影响. 关键词： 激光等离子体 电势 金属元靶 偏置电压     

Fundamentals of high power pulsed magnetron sputtering: Visualization of mechanisms for rate reduction and increased ion fraction

High power pulsed magnetron sputtering (HPPMS) has attracted a great deal of interest because of its potential to provide a highly ionized flux of target material to the substrate. However, practical experience with HPPMS has shown deposition rates typically lower than direct current sputtering (DC sputtering) rates at the same average power, and ionization fractions of target material flux to the substrate often lower than anticipated. A mathematical model explaining the source of these observed process characteristics has been proposed by the author previously. Here, a graphical means of visualizing the mechanism for deposition rate reduction and lower than expected ionization fractions is presented.     

Microstructure and mechanical properties of CrN films fabricated by high power pulsed magnetron discharge plasma immersion ion implantation and deposition

CrN films with strong adhesion with the substrate have been fabricated on Ti6Al4V alloy using novel plasma immersion ion implantation and deposition (PIII&D) based on high power pulsed magnetron sputtering (HPPMS). A macro-particle free chromium plasma is generated by HPPMS while the samples are subjected to high voltage pulses to conduct PIII&D. The CrN coatings have a dense columnar structure and low surface roughness. The grains in the films have the face-center cubic (fcc) structure with the (2 0 0) preferred orientation. An excellent adhesion is achieved with a critical load up to 74.7 N. An implantation voltage of 18 kV yields a hardness of 18 GPa and better wear resistance and a low friction coefficient of 0.48 are achieved.     

Magnetron source of accelerated plasma flow

A new source of an accelerated plasma flow intended for depositing high-quality coatings is described. In this source, a magnetron discharge for cathode target sputtering is combined with a high-voltage discharge with longitudinal oscillation of electrons for ionization of the accrued vapor in which the plasma density is distributed uniformly owing to the application of three-phase ionizer.     

Sputtering of the magnetron diode target in the presence of an external ion beam

The effect of an external ion beam on the plasma and target of a dc magnetron sputtering system in the course of reactive deposition of films is investigated. A combined experimental setup consisting of a magnetron diode and a hall-current ion source is constructed. The influence of a fast ion beam on the discharge current formation, the target emission characteristics, and the target etching rate is considered. It is shown that the ion assistance expands the operating range of the magnetron diode, increases the deposition rate, and substantially shortens the target training time. At the same time, it practically does not affect the ionization processes in the plasma.     

筒形溅射阴极的磁场优化及其高功率放电特性研究

基于高功率脉冲磁控溅射(HiPIMS)技术开发的筒形溅射阴极,配合电磁系统可有效地提升等离子体的输运效率.然而电磁系统的引入反作用于筒内放电特性,从而使靶面放电面积和放电强度无法同时维持.鉴于此,本文通过调整磁场布局,研究了靶面切向(横向)磁场和法向(纵向)磁场对靶面放电的作用规律,优化后靶面切向磁场分布更加均匀,磁场强度高于40 mT的靶面区域占比由51%增至67%,同时法向峰值强度外移,强度由73 mT增至96 mT.采用Ar/Cr体系放电发现:相同工艺条件下,优化后的溅射阴极辉光变亮,靶电流增大,放电面积变宽,放电特性得到显著提升.利用等离子体整体模型仿真和发射光谱仪检测发现优化后离子电流和光谱强度得到明显提升,Cr粒子密度提高一倍,增至2.6×10^20 m^–3,且离化率上升至92.1%,同时输出离子通量提高近一倍,实现了靶面放电与离子输出的双促进.     

Development of protective metal coatings on aluminum by magnetron sputtering

Depositions of copper and titanium coatings on aluminum foils and polished aluminum plates for thier protection against corrosion in alkaline media were performed. The coatings were deposited in three different types of magnetron sputtering systems: a direct current (DC) magnetron discharge, a high current impulse magnetron discharge, and a DC magnetron discharge with melted cathode. Only aluminum foils coated with copper films obtained by combined ion-plasma technology, which included preliminarily sputtering of the aluminum surface with an ion beam, deposition of a dense interlayer in the DC magnetron discharge with ion assistance of initial stage of deposition, and deposition of additional layer in the magnetron discharge with melted cathode, were resistant against 30 wt % NaOH solution.     

不同方法制备的类金刚石薄膜的XPS和Raman光谱的研究

分别利用金属脉冲磁过滤真空阴极弧沉积法(FCVA)、直流磁控溅射法(SP)和脉冲辉光放电等离子体化学气相沉积法(PECVD)在硅片上沉积类金刚石膜层.并利用激光拉曼光谱法(Raman spectroscopy)和X射线光电子能谱法(XPS)对类金刚石膜层进行研究.通过研究分析发现,不同方法制备的类金刚石膜层的G峰位、D...     

磁控溅射沉积薄膜实验参数优化光谱诊断

采用磁控溅射仪、Omni-λ300系列光栅光谱仪、CCD数据采集系统和光纤导光系统等构成的等离子体光谱分析系统,采集了以Cu和Al为靶材、氩气为工作气体,射频磁控溅射法沉积硅基薄膜时的等离子体发射光谱。以CuⅠ324.754 nm,CuⅠ327.396 nm,CuⅠ333.784 nm,CuⅠ353.039 nm,AlⅠ394.403 nm和AlⅠ396.153 nm为分析线,研究了Cu和Al等离子体发射光谱强度随溅射时间、溅射功率、靶基距和气体压强等实验参数的变化。并与射频磁控溅射沉积薄膜实验参数的选择进行对比,表明发射光谱法对射频磁控溅射薄膜生长条件的优化有着很好的指导作用。     

Structural and tribological properties of CrTiAlN coatings on Mg alloy by closed-field unbalanced magnetron sputtering ion plating

In this paper, a series of multi-layer hard coating system of CrTiAlN has been prepared by closed-field unbalanced magnetron sputtering ion plating (CFUBMSIP) technique in a gas mixture of Ar + N₂. The coatings were deposited onto AZ31 Mg alloy substrates. During deposition step, technological temperature and metallic atom concentration of coatings were controlled by adjusting the currents of different metal magnetron targets. The nitrogen level was varied by using the feedback control of plasma optical emission monitor (OEM). The structural, mechanical and tribological properties of coatings were characterized by means of X-ray photoelectron spectrometry, high-resolution transmission electron microscope, field emission scanning electron microscope (FESEM), micro-hardness tester, and scratch and ball-on-disc tester. The experimental results show that the N atomic concentration increases and the oxide on the top of coatings decreases; furthermore the modulation period and the friction coefficient decrease with the N₂ level increasing. The outstanding mechanical property can be acquired at medium N₂ level, and the CrTiAlN coatings on AZ31 Mg alloy substrates outperform the uncoated M42 high speed steel (HSS) and the uncoated 316 stainless steel (SS).