| Modelling and Optimization for Deposition of SiOxNy Films by Radio-Frequency Reactive Sputtering |
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| 作者姓名： | 徐文彬 董树荣 王德苗 |
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| 作者单位： | Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou 310027 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 50172042. |
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| 摘 要： | SiOxNy films are deposited by reactive sputtering from a Si target in Ar/O2/N2 atmospheres. In order to achieve the control of film composition and to keep a high deposition rate at the same time, a new sputtering model based on Berg＇s work is provided for the condition of double reactive gases. Analysis based on this model shows that the deposition process can easily enter the target-poisoning mode when the preset gas flow （N2 in this work） is too high, and the film composition will change from nitrogen-rich to SiO2-like with the increase of oxygen supply while keeping the N2 supply constant. The modelling results are confirmed in the deposition process of SiOxNy. Target self-bias voltages during sputtering are measured to characterize the different sputtering modes. FTIR-spectra and dielectric measurements are used to testify the model prediction of composition. Finally, an optimized sputtering condition is selected with the O2/N2 flow ratio varying from 0 to I and N2 supply fixed at I sccm. Average deposition rate of 17nm/min is obtained under this selected condition, which has suggested the model validity and potential for industry applications.
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| 关 键 词： | 模型化 最佳化 SiOxNy 薄膜 |
| 收稿时间： | 2007-2-3 |
| 修稿时间： | 2007-02-03 |
Modelling and Optimization for Deposition of SiOxNy Films by Radio-Frequency Reactive Sputtering |
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| XU Wen-Bin,DONG Shu-Rong,WANG De-Miao.Modelling and Optimization for Deposition of SiOxNy Films by Radio-Frequency Reactive Sputtering[J].Chinese Physics Letters,2007,24(9):2681-2684. |
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| Authors: | XU Wen-Bin DONG Shu-Rong WANG De-Miao |
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| Affiliation: | Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou 310027 |
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| Abstract: | SiOxNy films are deposited by reactive sputtering from a Si target in Ar/O2/N2 atmospheres. In order to achieve the control of film composition and to keep a high deposition rate at the same time, a new sputtering model based on Berg's work is provided for the condition of double reactive gases. Analysis based on this model shows that the deposition process can easily enter thetarget-poisoning mode when the preset gas flow (N2 in this work) is too high, and the film composition will change from nitrogen-rich to SiO2-like with the increase of oxygen supply while keeping the N2 supply constant. The modelling results are confirmed in the deposition process of SiOxNy. Target self-bias voltages during sputtering are measured to characterize the different sputtering modes. FTIR-spectra and dielectric measurements are used to testify the model prediction of composition. Finally, an optimized sputtering condition is selected with the O2/N2 flow ratio varying from 0 to 1 and N2 supply fixed at 1 sccm. Average deposition rate of 17nm/min is obtained under this selected condition, which has suggested the model validity and potential for industry applications. |
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| Keywords: | 81 15 Aa 81 15 Cd 77 55 +f |
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