Effects of Pre-exposure Mouse Pituitary with Low-dose ^60Co γ-ray on Growth Hormone （GH） and Body Mass Induced by Subsequent High-dose Irradiation

The pituitary of the B6C3F1 hybrid strain mice were irradiated with 0.05 Gy of ^60Co γ-ray as the pre-exposure dose (D1), and were then irradiated with 2 Gy of ^60Co γ-ray as challenging irradiation dose (D2) at 4h after per-exposure. Body weight and serum growth hormone (GH) were measured at 35th day after irradiation. The results showed that irradiation of mouse testes with 2 Gy of ^60Co γ-ray significantly diminished mousebody weight and level of serum GH (Table). Pre-exposure with a low-dose (0.05 Gy) of ^60Co γ-ray significantly alleviated reductions of mouse body weight and level of serum GH induced by subsequent a high-dose (2 Gy) irradiation (Table). The data suggested that low-dose ionizing irradiation can induce adaptive responses to the harmful effects of pituitary by subsequent high-dose exposure.     

Temperature dependence of radiation-induced attenuation of optical fibers

We investigate the temperature dependence of radiation-induced attenuation (RIA) at 1 310 nm for a Ge/P co-doped fiber after a steady-state γ-ray irradiation.A γ irradiation facility 60Co source is used to irradiate the fiber at a dose rate of 0.5 Gy/min,satisfying a total dose of 100 Gy.The test temperature ranges from-40 to 60℃ by 20℃,and the RIA of the fiber is obtained using a power measuring device.The experimental result demonstrates that RIA exhibits a steady,monotonic,and remarkable temperature dependence after approximately 48h of accelerated annealing at 70℃.The optical fiber irradiated with a high dose and annealed sufficiently can be used as a temperature sensor.     

The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.     

The effects of ^60Co γ-ray irradiation on the DC characteristics of enhancement-mode A1GaN/GaN high-electron-mobility transistors

The effects of ^60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron- mobility transistors （E-mode HEMTs） are investigated. The results show that having been irradiated by^60Co γ-rays at a dose of 3 Mrad （Si）, the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode A1GaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.     

The effects of ⁶⁰Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.     

Active Loss of Light Yield of PbWO4：Y Scintillation Crystals After Irradiation

PWO crystals doped with yttrium were grown with the Bridgman method in platinum crucible and by using an indigenously developed resistive heating furnace. After an exposure of γ-ray from a ^60Co source, with the dose rate of lS rad/h for 20h, the light output increases for about 15%, accompanied with vanishing of an optical absorption band at 420 nm. The excitation and emission spectra of PWO crystals were measured before and after irradiation with different dose rates. The optical absorption band at 420nm was also found in the PWO sample annealed in oxygen-rlch atmosphere. It is suggested that the absorption band at 42Onm is related to Pb^3 point defects existing in the PWO crystal. The unusual change of light output after irradiation probably results from the transformation of lead ions from Pb^3 to Pb^2 .     

Radiation Induced Optical Absorption of Cubic Lead Fluoride Crystals and the Effect of Annealing

Transparent and colorless lead fluoride crystals with sizes of 20 × 20 × 20 （ram3） are irradiated with several doses of γ-rays from a ^60Co source. Their transmittance spectra before and after irradiation are measured, and a new parameter ΔT = Tb - Ta is defined to evaluate the irradiation damage. Three optical absorption bands peaking at 27Onto, 37Onto and 50Onto are found in the plots of AT versus wavelength, and their intensities increase with the irradiation dose. These optical absorption bands, except the one at 27Onto, can recover spontaneously with time. Thermal annealing treatment can enhance this recovery of the transmittance, while the optimum annealing temperature for different samples depends on the irradiation dose.     

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

The total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator(SOI)pMOSFETs have been studied by comparing them with those of the back transistor of SOI n MOSFETs fabricated on the same wafer. The transistors were irradiated by60 Co γ-rays with various doses and the front transistors were biased in a Float-State and Off-State, respectively, during irradiation. The total dose radiation responses of the back transistors were characterized by their threshold voltage shifts. The results show that the total dose radiation response of the back transistor of SOI pMOSFETs, similar to that of SOI n MOSFETs, depends greatly on their bias conditions during irradiation. However, with the Float-State bias rather than the Off-State bias, the back transistors of SOI pMOSFETs reveal a much higher sensitivity to total dose radiation, which is contrary to the behavior of SOI n MOSFETs. In addition, it is also found that the total dose radiation effect of the back transistor of SOI pMOSFETs irradiated with Off-State bias, as well as that of the SOI n MOSFETs, increases as the channel length decreases. The annealing response of the back transistors after irradiation at room temperature without bias, as characterized by their threshold voltage shifts, indicates that there is a relatively complex annealing mechanism associated with channel length, type, and bias condition during irradiation. In particular, for all of the transistors irradiated with Off-State bias, their back transistors show an abnormal annealing effect during early annealing. All of these results have been discussed and analyzed in detail by the aid of simulation.     

Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors

Radiation effects on complementary metal-oxide-semiconductor(CMOS) active pixel sensors(APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10~(11) protons/cm~2 and 2.14 × 10~(11) protons/cm~2,respectively, while another sample has been exposed un-biased to 65 krad(Si) ~(60)Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose(TID) damage.     

Effect of tellurium(Te~(4+)) irradiation on microstructure and associated irradiation-induced hardening

The GH3535 alloy samples were irradiated using 15-Me V Te~(4+) ions at 650℃ to a dose of 0.5, 3.0, 10, and 20 dpa, respectively. The Te atoms distribution and microstructure evolution were examined by electron probe microanalysis(EPMA)and transmission electron microscopy(TEM). The nano-indenter was then used to measure the nano-hardness changes of samples before and after irradiation. TEM results showed the formation of dislocation loops in the irradiated samples.Their mean diameters increase with the increase of irradiation dose and tends to be saturated when irradiation dose exceeds10 dpa. The ratio of yield strength increments calculated by dispersed barrier hardening(DBH) model is basically consistent with that of nano-hardness increments measured by nano-indenter. In addition, the relationship between the nano-hardness increments and dpa for the GH3535 alloy irradiated by Te ions has been revealed in the study.     

Irradiation effect on strain sensitivity coefficient of strain sensing fiber Bragg gratings

The effect of irradiation on the strain sensitivity coefficient of strain sensing fiber Bragg gratings(FBGs) has been investigated through experiments. FBGs were fabricated in single mode fibers with 3 mol% Ge-concentration in the core and with a H2-loading treatment. In experiments, the FBGs were subjected to γ-radiation exposures using a Co60 source at a dose-rate of 25 Gy/min up to a total dose of 10.5 kGy. The GeO defect in fiber absorbs photons to form a GeE’ defect; the interaction with H2 is a probable reason for the γ-radiation sensitivity of gratings written in hydrogen loaded fibres. The effect mechanism of radiation on the strain sensitivity coefficient is similar to that of radiation on the temperature sensitivity coefficient. Radiation affects the effective index neff, which results in the change of the thermo-optic coefficient and the strain-optic coefficient. Irradiation can change the strain sensitivity coefficient of FBGs by 1.48%–2.71%, as well as changing the Bragg wavelength shift(BWS) by 22 pm–25 pm under a total dose of 10.5 kGy. Our research demonstrates that the effect of irradiation on the strain sensitivity coefficient of FBG is small and that strain sensing FBGs can work well in the radiation environment.     

Corrosion behavior of high-level waste container materials Ti and Ti–Pd alloy under long-term gamma irradiation in Beishan groundwater

Titanium and titanium–palladium alloys are important potential materials for nuclear waste container, which will endure both intense γ-irradiation and groundwater erosion. Therefore, it is very important to investigate the corrosion behavior of the container materials. In this research, the cumulative dose effect of TA8-1 type titanium–palladium alloy(TA8-1) and TA2-type pure titanium(TA2) under γ-irradiation was studied based on the geological disposal of nuclear wastes. The irradiation experiments were performed at room temperature using60 Co gamma sources with a 5.0-k Gy·h-1 intensity for 40, 80 or 160 days, respectively. The p H value and conductivity of Beishan groundwater were investigated.The results showed that the p H value changed from alkaline(8.22) to acidic(2.46 for TA8-1 and 2.44 for TA2), while the un-irradiated solution remained alkaline(8.17 for TA8-1 and 8.20 for TA2) after 160 days. With the increase of irradiation dose, the conductivity increases rapidly and then tends to become stable, which indicates that the titanium dioxide corrosion layer formed on the surface of the sample surface effectively prevents further corrosion. Meanwhile, XRD and SEM–EDS analysis results show that the main components of corrosion products are Ti O_2 and Ti O. The titanium on the surface of the sample is oxidized, resulting in slight uneven local corrosion. The results show that TA8-1 and TA2 are suitable to be used as candidate materials for high-level waste(HLW) disposal containers due to their excellent performance under long-term and high-dose irradiation corrosion.     

Influence of 12C6+ ion irradiation on mutant avermitilis

The effects of ¹²C⁺⁶ ion irradiation on colony morphology and mycelia morphology, as well as on mutation rate have been studied in the B1a high-product strains (ZJAV-Y1-203) mutated by heavy ion irradiation and compared with that in the original strain (ZJAV-A-1). After irradiating the rate of a straw hat colony type having a high ability of producing B1a in ZJAV-Y1-203 strains was higher than that found in ZJAV-A-1 strains. When strains were cultured in a liquid medium for 24 hours, the mycelium becoming thinner could be observed in all of the irradiated ZJAV- Y1-203 groups, but only in the ZJAV-A-1 groups irradiated at the dose of 50 Gy or more. The early growth of mycelium was inhibited in the ZJAV- Y1-203 group irradiated with a high dose. The highest positive mutation rate (23.5%) of ZJAV - Y1 - 203 was reached at the lower dose of 30 Gy while the highest positive mutation rate of 34.2% in ZJAV-A-1 appeared at 50 Gy.     

XPS and Raman studies of electron irradiated sodium silicate glass

The microstructure modifications of sodium silicate glass induced by 1.2-MeV electron irradiation are studied by x-ray photoelectron spectroscopy and Raman spectroscopy. Depth profile analyses are also performed on the irradiated glass at 109 Gy. A sodium-depleted layer with a thickness of a few tens of nanometers and the corresponding increase of network polymerization on the top surface are observed after electron bombardment, while the polymerization in the subsurface region has a negligible variation with the irradiation dose. Moreover, the formation of molecular oxygen after electron irradiation is evidenced, which is mainly aggregated in the first two-micron-thick irradiated glass surface. These modifications are correlated to the network relaxation process as a consequence of the diffusion and desorption of sodium species during electron irradiation.     

A study on the best irradiation dose of X-ray for Hep-2 cells by Fourier transform infrared spectroscopy

Fourier transform infrared spectroscopy (FTIR) was employed to study the human epidermis larynx car- cinoma cell lines (Hep-2) which were irradiated by different doses of X-ray.The results show that (1) the irradiation of X-ray damages the structure of the CH_3 groups of the thymine in DNA,which restrains the reproduction of Hep-2 cells effectively,(2) the 8 Gy dose of X-ray irradiation changes the framework and the relative contents of some proteins,lipids and the nucleic acid molecules intercellular in the greatest degree,and (3) the 8 Gy dose of X-ray irradiation is the best irradiation dose for lowering the degree of the cancerization of Hep-2 cells according to the criteria for the degree of the cancerization reported recently.Meanwhile,the apoptosis of these cells were detected by using flow cytometry (FCM) primarily. It shows that the apoptotic ratio of the Hep-2 cells depends on the irradiation dose to some extent,but is not linearly.And the apoptotic ratio of the 12 Gy dose group is the maximum (20.36%),but the apoptotic ratios of the 2 to 8 Gy dose groups change little.     

Radiation-induced effects in polarization-maintaining optical fibers for interferometric gyroscope

Radiation-induced attenuation (RIA) in four types of polarization-maintaining optical fibers for interfer-ometric fiberoptic gyroscope (IFOG) at 1310 nm is measured. The measurements are conducted during and after steady-state γ-ray irradiation using a 60 Co source in order to observe significantly different RIA behavior and recovery kinetics. Mechanisms involving dopants and manufacturing process are introduced to analyze the RIA discrepancy as well as to guide the choice and hardening of optical fibers during the design of IFOG. Medium-accuracy IFOG using Ge–F-codoped fiber and pure silica core fiber can survive in the space radiation environment.     

Effect of vacancy defect clusters on the optical property of the aluminium filter used for the space solar telescope

We investigate the microstructures of the pure aluminium foil and filter used on the space solar telescope, irradiated by photons with different doses. The vacancy defect clusters induced by proton irradiation in both samples are characterized by transmission electron microscopy, and the density and the size distribution of vacancy defect clusters are determined. Their transmittances are measured before and after irradiating the samples by protons with energy E=100~keV and dose φ =6× 10¹¹/mm². Our experimental results show that the density and the size of vacancy defect clusters increase with the increase of irradiation doses in the irradiated pure aluminium foils. As irradiation dose increases, vacancies incline to form larger defect clusters. In the irradiated filter, a large number of banded void defects are observed at the agglomerate boundary, which results in the degradation of the optical and mechanical performances of the filter after proton irradiation.     

High-Spin States in Odd-Odd ^140Pr Nucleus

High-spin level structure of doubly odd nucleus ^140Pr has been investigated via the ^130Te(^14N,4n)^140Pr reaction at beam energies from 55 to 65 MeV. Measurements of γ-ray excitation functions, γ-ray singles and γ-γ-t coincidences were performed with twelve BGO(AC)HPGe detectors. The level scheme of ^140Pr, including 27 new levels and 42 new γ rays, has been established for the first time. The level structure is compared with those in the neighbouring odd-odd nuclei, and interpreted qualitatively.     

Study of 1／2 [660] （π^i13／2） Rotation Band in ^179Au

High-spin states in ^179Au have been studied experimentally by using the ^149Sm(^35C1, 5n) reaction at beam energies of 164,~180 MeV. The ^35C1 beam was provided by the tandem accelerator at the Japan Atomic En-ergy Research Institute (JAERI). The target is an isotopically enriched ^149Sm metallic foil of 1.5 mg/cm^2 thickness with a 5.0 mg/cm^2 Pb backing. Measurements of γ-ray excitation functions, X-γ coincidences and γ-γ-t coincidences were performed with 13 HPGe‘s with BGO anti-Compton shields and three LOAX detectors.     

壳聚糖辐射裂解制备基因载体及其体外转染性能研究

Chitosan (CS) is expected to be an ideal gene carrier for its high biosafety. In this work, CS with low molecular weight were prepared through the γ-ray radiation on the acetic acid solution of CS. The CS chains were scissioned under the γ-ray radiation, and the molecular weight (MW) of CS decreased with the absorbed dose. When the absorbed dose was above 30 kGy, the molecular weight of CS decreased about an order of magnitude. The γ-ray-radiation-scissioned CS can e ectively bind with plasmid (pEGFP) through complex coacervation method, forming pEGFP/ γ-ray-radiation-scissioned CS complex particles with a size of 200-300 nm. The complex particles have good stability and little cytotoxicity. The in uitro gene transfection efficiencies of the pEGFP/ γ-ray-radiation-scissioned CS complex particles were investigated by fluorescence microscope and flow cytometry. The results showed that the gene vectors using γ-ray-radiation-scissioned CS as the carrier will possess better gene transfection efficiency than those using natural high-MW CS as the carrier. The higher the absorbed dose, the smaller the MW of CS and the better transfection efficiency of the corresponding gene vector. This work provides a green and simple method on the preparation of CS-based gene vectors with high efficiency and biosafety.