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The effects of ^60Co γ-ray irradiation on the DC characteristics of enhancement-mode A1GaN/GaN high-electron-mobility transistors
Authors:Chen Chao Dai Li-Ping Tian Ben-Lang  Liu Xing-Zhao Deng Xin-Wu  and Chen Yuan-Fu
Affiliation:State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract:A1GaN/GaN, enhancement-mode high-electron-mobility transistors, ^60Co γ-ray irradi-ation
Keywords:A1GaN/GaN  enhancement-mode high-electron-mobility transistors  ^60Co γ-ray irradi-ation
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