| The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors |
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| 引用本文： | 陈超,田本朗,刘兴钊,戴丽萍,邓新武,陈远富.The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors[J].中国物理 B,2012,21(7):78503-078503. |
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| 作者姓名： | 陈超 田本朗 刘兴钊 戴丽萍 邓新武 陈远富 |
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| 作者单位： | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China |
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| 基金项目： | Project supported by the Major Program of the National Natural Science Foundation of China (Grant No. 50932002) |
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| 摘 要： | The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.
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| 关 键 词： | AlGaN/GaN enhancement-mode high-electron-mobility transistors 60Co γ-ray irradiation |
| 收稿时间： | 2011-12-17 |
The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors |
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| Chen Chao,Tian Ben-Lang,Liu Xing-Zhao,Dai Li-Ping,Deng Xin-Wu,Chen Yuan-Fu.The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors[J].Chinese Physics B,2012,21(7):78503-078503. |
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| Authors: | Chen Chao Tian Ben-Lang Liu Xing-Zhao Dai Li-Ping Deng Xin-Wu Chen Yuan-Fu |
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| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electronmobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated. |
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| Keywords: | AlGaN/GaN enhancement-mode high-electron-mobility transistors 60Co γ-ray irradiation |
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