The effects of <sup>60</sup>Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors |
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Authors: | Chen Chao Tian Ben-Lang Liu Xing-Zhao Dai Li-Ping Deng Xin-Wu and Chen Yuan-Fu |
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Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China |
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Abstract: | The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated. |
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Keywords: | AlGaN/GaN enhancement-mode high-electron-mobility transistors 60Co γ-ray irradiation |
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