Investigation of cavity modes and direct observation of Purcell enhancement in 2D photonic crystal defect microcavities

We demonstrate our ability to control and manipulate the optical modes in 2D Photonic Crystal Defect cavities and investigate their coupling to InGaAs self-assembled quantum dots. Our results enable us to probe the nature of individual cavity modes and directly investigate cavity QED phenomena. For the lowest mode volume cavities investigated, consisting of a single missing air hole within a hexagonal lattice, we have measured a clear Purcell enhancement of the light-matter interaction in the weak coupling regime. For QDs on-resonance with localized cavity modes this translates to a shortening of the quantum dot spontaneous emission lifetime by a factor 2 when compared to off-resonance dots.     

微腔中CdSe量子点荧光增强效应

文章主要研究了CdSe量子点微腔结构,微腔结构包括上下分布式布拉格反射镜(DBR),中间的有源层为溶解在聚甲基丙烯酸甲酯(PMMA)中的CdSe胶体量子点.采用传递矩阵法模拟微腔的反射光谱,对实验测试曲线进行较好的拟合.通过测试微腔结构的光致荧光(PL)光谱,其半峰宽(FWHM)由未加入微腔的CdSe量子点样品的27.9 nm,减小到微腔结构的7.5 nm,在微腔中的量子点,由于腔模式的出现,其发光谱的品质因数增加了3.6倍,达到了荧光增强的效果. 关键词： CdSe量子点 微腔效应 荧光增强     

Majorana fermions induced fast-and slow-light in a hybrid semiconducting nanowire/superconductor device

We investigate theoretically Rabi-like splitting and Fano resonance in absorption spectra of quantum dots(QDs)based on a hybrid QD-semiconducting nanowire/superconductor(SNW/SC)device mediated by Majorana fermions(MFs).Under the condition of pump on-resonance and off-resonance,the absorption spectrum experiences the conversion from Fano resonance to Rabi-like splitting in different parametric regimes.In addition,the Fano resonances are accompanied by the rapid normal phase dispersion,which will indicate the coherent optical propagation.The results indicate that the group velocity index is tunable with controlling the interaction between the QD and MFs,which can reach the conversion between the fast-and slow-light.Fano resonance will be another method to detect MFs and our research may indicate prospective applications in quantum information processing based on the hybrid QD-SNW/SC devices.     

Enhanced emission of single quantum dot formed by interface fluctuations in photonic-crystal microcavities

We fabricated photonic-crystal (PhC) microcavities tuned to GaAs quantum dots (QDs) formed by interface fluctuation for the first time and observed the spontaneous emission enhancement in a weak coupling regime. A QD is a very thin GaAs quantum well (QW), and its interface steps exhibit quantum dot-like behavior. The emission intensity from the PhC cavity was stronger than that from the area where no PhC pattern was fabricated and the overall shape of the photoluminescence (PL) agreed with the cavity mode calculated with the three-dimensional (3D) finite-difference time domain (FDTD) method. The spontaneous emission enhancement factor was 10.     

Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer

We have studied the optical properties of two layers of InAs self-assembled quantum dots (QDs). The QDs were separated by a GaAs barrier with thickness varied from 2.5 to 10 nm. All samples exhibited double peaks from low-temperature photoluminescence spectra. The energy difference between two peaks shows that the origin of the double peaks is different for each sample. In case of the thin barrier thickness, the double peaks are due to the coupling of the ground states of lower and upper dots. In the thick barrier case, the double peaks originate from the ground and excited states because the barrier is thick enough to separate the double QDs.     

Photoluminescence from site-selected coupling between quantum dots and microtoroid cavities

By using CdSe/ZnS quantum dots （QDs）, we study the effect of cavity quantum electrodynamics on the coupling of the microtoroid cavity. When with whispering gallery （WG） modes, the microtoroid cavity demonstrates high quality factor and small mode volume at visible wavelengths. Accordingly, fiber tapers allow QDs to adhere into the cavity and further permit the control of site-selected coupling. From the luminescence spectra, QDs are modulated effectively by cavity modes, Variable modulations are observed by changing QD coupling conditions. Therefore, based on experimental and theoretical research, strong and tunable Purcell enhancement can be realized by this system.     

Modified spontaneous emission of CdTe quantum dots inside a photonic crystal

The angular dependence of the spontaneous emission of CdTe quantum dots (QDs) inside a photonic crystal with a pseudogap is reported. The sensitive dependences of the radiative lifetime and the photoluminescence spectrum of CdTe QDs on the observation angle demonstrate the effect of the photonic bandgap on the spontaneous emission of the QDs.     

Three-dimensional photon confinement in a spherical microcavity with CdTe quantum dots: Raman spectroscopy

We have studied the Raman spectra of a system consisting of a polystyrene latex microsphere coated by CdTe colloidal quantum dots. The cavity-induced enhancement of the Raman scattering allows the observation of Raman spectra from only one CdTe monolayer. Periodic structure with very narrow peaks in the Raman spectra of a single microsphere was detected both in Stokes and anti-Stokes spectral regions, arising from the coupling between the emission from quantum dots and spherical cavity modes.     

PHOTOLUMINESCENCE STUDY OF InAs/GaAs SELF-ORGANIZED QUANTUM DOTS WITH BIMODAL SIZE DISTRIBUTION

We have investigated the temperature dependence of the photoluminescence (PL) spectrum of self-organized InAs/GaAs quantum dots. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy image for uncapped sample. The power-dependent PL study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. Due to lacking of the couple between quantum dots, an unusual temperature dependence of the linewidth and peak energy of the dot ensemble photoluminescence has not been observed. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 μm at room temperature.     

等同双原子Jaynes-Cummings模型的量子特性及系统光谱

在全量子理论的背景下提出两个二能级原子分别与一单模腔场相互作用的系统模型,利用量子主方程和数值模拟计算等方法,研究该体系中腔场平均光子数、Mandel's Q因子及二阶量子相关度在非稳态时的变化规律。此外,对体系中原子及腔场中光谱结构进行了分析。结果表明:减小腔场耗散系数,增大原子间耦合系数,体系量子特性愈加明显。体系光谱呈现出Mollow三重峰结构,且原子辐射谱强度远大于腔场辐射谱强度。当原子跃迁频率与腔场跃迁频率为近共振时,Mollow峰值为三峰中最大值。此外,增大原子与腔场间耦合系数,可增大原子光谱的中峰强度;而增大腔场光谱的中峰强度,则需减小原子与腔场间耦合系数。     

Growth and characterization of InAs quantum dots with low-density and long emission wavelength

The growth parameters affecting the deposition of self-assembled InAs quantum dots （QDs） on GaAs substrate by low-pressure metal-organic chemical vapor deposition （MOCVD） are reported. The low-density InAs QDs （- 5 × 10^8cm^-2） are achieved using high growth temperature and low InAs coverage. Photoluminescence （PL） measurements show the good optical quality of low-density QDs. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1361 nm and 23 meV （35 nm）, respectively, which are obtained as the GaAs capping layer grown using triethylgallium （TEG） and tertiallybutylarsine （TBA）. The PL spectra exhibit three emission peaks at 1361, 1280, and 1204 nm, which correspond to the ground state, the first excited state, and the second excited state of the ODs, respectively.     

A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy

1.3μm emitting InAs/GaAs quantum dots(QDs) have been grown by molecular beam epitaxy and QD light emitting diodes(LEDs) have been fabricated.In the electroluminescence spectra of QD LEDs,two clear peaks corresponding to the ground state emission and the excited state emission are observed.It was found that the ground state emission could be achieved by increasing the number of QDs contained in the active region because of the state filling effect.This work demonstrates a way to control and tune the emitting wavelength of QD LEDs and lasers.     

Controlling the spontaneous emission rate of single quantum dots in a two-dimensional photonic crystal

We observe large spontaneous emission rate modification of individual InAs quantum dots (QDs) in a 2D photonic crystal with a modified, high-Q single-defect cavity. Compared to QDs in a bulk semiconductor, QDs that are resonant with the cavity show an emission rate increase of up to a factor of 8. In contrast, off-resonant QDs indicate up to fivefold rate quenching as the local density of optical states is diminished in the photonic crystal. In both cases, we demonstrate photon antibunching, showing that the structure represents an on-demand single photon source with a pulse duration from 210 ps to 8 ns. We explain the suppression of QD emission rate using finite difference time domain simulations and find good agreement with experiment.     

Photoluminescence of InAs Self-Organized Quantum Dots Formation on InP Substrate by MOCVD

In this letter, we present results of photoluminescence (PL) emission from single-layer and multilayer InAs self-organized quantum dots (QDs), which were grown on (001) InP substrate. The room temperature PL peak of the single-layer QDs locates at 1608 nm, and full width at half-maximum (FWHM) of the PL peak is 71 meV. The PL peak of the multilayer QDs locates at 1478 nm, PL intensity of which is stronger than that of single-layer QDs. The single-layer QD PL spectra also display excited state emission and state filling as the excitation intensity is increased. Low temperature PL spectra show a weak peak between the peaks of QDs and wetting layer (WL), which suggests the recombination between electrons in the WL and holes in the dots.     

Chemiluminescence resonance energy transfer in the luminol-CdTe quantum dots conjugates

The luminol-CdTe quantum dots (QDs) conjugates were prepared through the reaction between -NH₂ and -COOH. The resonance energy transfer between chemiluminescence donor (luminol-H₂O₂ system) and quantum dots (QDs, with different emission peaks) acceptors (CRET) was investigated. The luminescence of QDs in luminol-QDs conjugates in the process of CRET was influenced by the molar ratio of luminol/QDs. It could reach higher luminescence intensity while the luminol/QDs value was 1/1. Quantum yield of QDs and overlapping areas between the emission spectrum of luminol and adsorption spectrum of QDs played important roles in the CRET efficiency of luminol-QDs conjugates. The higher CRET efficiency (21.2%) was observed when the 540 nm QDs were used as acceptors. This work will offer helpful knowledge for the CRET studies based on QDs.     

二维GaAs 基光子晶体微腔的制作与光谱特性分析

研究了以InAs量子点为有源区的二维GaAs基光子晶体微腔的设计与制作,测试并分析了室温下微腔的光谱特性.观察到了波长约为1137 nm,谱线半高宽度约为1 nm的尖锐低阶谐振模式发光峰.我们比较了不同刻蚀条件下光子晶体微腔的发光谱线,结果表明空气孔洞截面的垂直度是影响光子晶体微腔发光特性的重要因素之一.通过调节干法刻蚀工艺,改变空气孔半径与晶格常数的比率,可以在较大范围内调节谐振模式发光峰位置,达到谐振模式与量子点发光峰调谐的目的.     

Inhibition and enhancement of the spontaneous emission of quantum dots in structured microresonators

Spontaneous emission of quantum dot systems in laterally structured microcavities that exhibit photon confinement in all three directions has been studied by time-resolved photoluminescence spectroscopy. For on-resonance conditions, we find that the dot emission rate is increased substantially over that of the unstructured planar cavity. For off-resonance conditions, we are able to suppress the emission rate by an order of magnitude by using cavities with metal coatings, which we attribute to the suppression of leaky optical modes in these structures.     

The steady state of two quantum dots in a cavity

The steady state of two quantum dots (QDs) resonantly coupled to a cavity mode is investigated under two pumping configurations: when the QDs are indistinguishable for the excitation, we find that as a result of the efficient singlet state population, the cavity emission is suppressed. On the other hand, the storage of photons is strongly enhanced when the dots are pumped independently. The system is found to be suitable for entanglement in the first case and for lasing in the second.     

Successful growth of two different quantum dots on one substrate

We report the successful growth of ZnSe and ZnTe quantum dots (QDs) embedded in ZnS on GaAs substrate. These QDs have good optical properties and show quantum confinement effect. High-resolution electron scanning microscope studies show that these QDs are grown in Volmer–Weber mode. It is found that the size of the QDs is controlled by the growth duration. When the growth time is short, high density of QDs could be fabricated, but with a long growth time the small QDs get together to form a large cluster. We also show that with this growth method it is possible to grow both ZnSe quantum and ZnTe QDs on one substrate at the same time. For this dual QDs system, two peaks corresponding to the emission from the ZnSe dots (3.0 eV, blue–violet) and ZnTe dots (2.6 eV, green–blue) could be observed at the same time in the photoluminescence measurement.     

Tunable supercurrent in a parallel double quantum dot system

The supercurrent through an Aharonov-Bohm interferometer containing two parallel quantum dots connected with two superconductor leads is investigated theoretically. The possibility of controlling the supercurrent is explored by tuning the quantum dot energy levels and the total magnetic flux. By tuning the energy levels, both quantum dots can be in the on-resonance or off-resonance states, and thus the optimal modulation of the supercurrent can be achieved. The supercurrent sign does not change by simply varying the quantum dot energy levels. However, by tuning the magnetic flux, the supercurrent can oscillate from positive to negative, which results in the π-junction transition.