Recording of one-dimensional holograms in MnBi films

A new system of holographic recording on moving MnBi film is described. The data to be stored are recorded in a track of non-overlapping 1-d Fourier holograms. A cavity-dumped argon laser is used for writing. The feasibility of this new system has been demonstrated by writing and erasing tracks consisting of 20 μm by 2 μm holograms. A maximum bit density of 10⁷ bit/cm² and a writing data rate of 10⁸ bit/s should be attainable with such a system.     

有机复合薄膜中超高密度信息存储研究

利用大气中工作的扫描隧道显微镜，在真空蒸发方法制备的有机复合薄膜上，通过施加电压脉冲法做出了信息点阵，信息点大小为1.3nm.电流-电压特性表明：存储区表现为导体特性，非存储区为绝缘体特性.信息存储实验表明：相邻两个信息记录点的间距可小于2nm,信息存储密度可高达2.5×10¹³bit/cm².对信息存储的机制进行了初步分析. 关键词：     

超高密度电学信息存储研究进展

21世纪是经济信息化、信息数字化的高科技时代，信息的爆炸式增长及电子器件持续微型化的要求需要小断研究和开发更高仔储密度、更快响应速度、更长存储寿命及可反复读、写的材料和器件。在纳米／分子尺度上实现存储功能的超高密度信息存储已成为当前信息领域一个倍受关注的研究热点。本文从存储材料和技术角度介绍了基于电学双稳态的超高密度信息存储最新研究进展。     

Film carriers for super-high-density magnetic storage

The problem of increasing the recording density in magnetic storage devices is considered. It is shown that nanograined magnetic film media are candidate materials for magnetic data carriers. For these materials to completely meet the requirements for super-high-density magnetic carriers, appropriate structure ordering must be set in the films. To this end, it is suggested to take advantage of the high adsorbability of 3d metal nanoparticles on high-molecular compounds. To produce the carriers based on these materials with a recording density of as high as 10¹⁰ bit/cm², nanoparticles of size ≤5 nm should be embedded in a polymer matrix. To do this, it is necessary to combine chemical and physical methods for nanocomposite production.     

Storage of binary electrical signals in one-dimensional holograms with extremely narrow tracks

A report is given on the results of an experiment in which binary data stored in sequentially superimposed one-dimensional holograms with extremely narrow tracks were recorded on a transported recording medium. The width of the holograms was reduced to 3 μm. Since the results obtained show the optical signal-to-noise ratio of the reconstructed image points to be only slightly inferior to that with holograms with 100 μm wide tracks, the method used can be expected to yield an areal bit density greater than 10⁷ bits/cm².     

原子力显微镜对TeOx薄膜中短波长静态记录点结构的分析

以真空蒸镀法在K9基底上制备了TeOx单层薄膜,采用特定的定位方法,使用原子力显微镜对不同记录功率下薄膜中短滤长静态记录点（514．5nm)的结构进行了分析。实验结果表明薄膜具有良好的记录灵敏性,在记录功率1．5mW时就可产生较高的反射率对比度,记录点具有明显的凹陷和凸起结构,随着记录功率的提高,凹陷和凸起增强,记录点增大。记录点的形态结构和记录前后反射率对比度是直接相关的。研究揭示了原子力显微镜在提高薄膜存储特性如信噪比,存储密度等方面的分析功能。     

基于Rotaxane类分子的稳定、重复、可反复擦写的纳米信息存储

Rotaxane类分子在溶液中可以发生可逆的分子构型改变,并随之引起分子电导特性的转变,在纳米电子器件和分子存储器件中具有潜在的应用前景.但是还不能确定这类分子在固体薄膜中是否具有类似于在溶液中的结构与电导转变,需要对Rotaxane类分子固态薄膜进行深入的结构和特性研究.文章作者在一类Rotaxane分子H1和H2的固态薄膜上获得了纳米尺度的电导转变和稳定、重复的、近于单分子尺度的纳米级存储;同时,成功地在H2分子薄膜上实现了信息记录点的可反复擦写.另外,在单个分子和亚分子的水平上直接观察到了Rotaxane分子在外电场诱导下分子结构的可逆变化以及随之发生的相应电导特性的可逆转变, 证实了Rotaxane分子在固态薄膜中的可逆结构和电导转变.     

Reversible,electical and optical switching on silver 3—phenyl—1—ureidonitrile complex thin films

We report on the reversible, electrical and optical switching on silver 3-phenyl-1-ureidonitrile complex thin films. The films can switch from a high impedance state to a low impedance state with an applied electric field at the threshold of 3.5×10⁷V/m. Furthermore, the films can be switched back to the original state by treating the samples at about 80℃. The optical recording is fulfilled using a semiconductor laser with a wavelength of 780 nm. Erasure can be accomplished by bulk heating or by the laser working with the power beneath the threshold. No loss of the organic was found in the experiments. This material may have a potential application in ultrahigh data density storage.     

Manipulating Ge quantum dots on ultrathin SixGe1−x oxide films using scanning tunneling microscope tips

Germanium quantum dots (QDs) were extracted from ultrathin Si_xGe_1−x oxide films using scanning tunneling microscope (STM) tips. The extraction was most efficiently performed at a positive sample bias voltage of +5.0 V. The tunneling current dependence of the extraction efficiency was explained by the electric field evaporation transfer mechanism for positive Ge ions from QDs to STM tips. Ge QDs (∼7 nm) were formed and isolated spatially by extracting the surrounding Ge QDs with an ultrahigh density of >10¹² cm⁻². Scanning tunneling spectroscopy of the spatially-isolated QDs revealed that QDs with an ultrahigh density are electrically-isolated from the adjacent dots.     

菌紫质高密度偏振全息光数据存储实验研究

实验研究了基因改性菌紫质BR_D96N薄膜在不同偏振光记录下的全息存储特性，比较了不同 偏振态记录光和读出光对衍射像光强及信噪比的影响. 实验结果表明，与其他偏振全息记录 相比，正交圆偏振光记录可实现衍射光偏振状态与散射噪声偏振状态的分离，得到高信噪比 的衍射像，同时还具有高的衍射效率. 以 He_Ne 激光器（633nm，3mW）为记录和读出光源 ，用空间光调制器作为数据输入元件，CCD作为数据读出器件，采用傅里叶变换全息记录的 方法，在 BR_D96N 薄膜样品60μm×42μm的面积上进行了正交圆偏振全息数据存储，达到 了2×10⁸bit/cm²的存储面密度，并实现了编码数据的无误读出与 还原. 关键词： 菌紫质 偏振全息 光致变色 光致各向异性 高密度光存储     

Use of continuous-wave illumination for two-photon three-dimensional optical bit data storage in a photobleaching polymer

We show that a continuous-wave laser beam at an infrared wavelength of 800 nm can be used for two-photon three-dimensional bit data storage in a photobleaching polymer. We successfully demonstrate recording and reading of six layers of data bits with a transverse bit separation of 4.3microm and an axial layer separation of 20microm . This result leads to a three-dimensional bit density of approximately 3Gbits/cm(3) .     

Micromagnetic simulations for terabit/in head/media systems

Bit-patterned (BP) recording is a candidate for extending magnetic data storage towards 10 Tb/in² bit densities. An analysis of the design tolerances is carried out using dynamic micromagnetic simulations and statistical models. The effects of distributions of the magnetic material properties on phase margin and addressability error-rate during writing are investigated. At 1.3 Tb/in² a rapid increase of the error-rate is observed when the write-synchronization deviates from the optimum phase φ₀. Estimates of the fabrication and write-synchronization tolerances are derived from the phase margins. It is shown that the switching-field distribution (from intra-island variations and inter-island interactions) as well as the fabrication and synchronization tolerances must be tightly controlled for Tb/in² applications. At ultra-high densities, BP media may need to be combined with energy-assisted writing, which is referred to as second-generation BP recording.     

White light micrograting multiplexing for high density data storage

Recording of multiplexed microholographic gratings with improved recording volume for high density optical data storage is proposed and demonstrated. By using a hybrid diffractive-refractive objective lens with extended depth of focus, we have achieved a recording beam size of approximately 1 microm and a focal depth of 20 microm. Multiple gratings corresponding to spectral lines within the 400-650 nm spectral band have been successfully multiplexed in a single recording spot or pit of size 1.25 microm on a DuPont photopolymer film using a white light source along with narrowband filters or dispersion elements, thus demonstrating the storage of multiple bits in a single pit. Simultaneous readout of multiple bits in a single storage pit is accomplished with a microspectrometer-type readout head using a white light source.     

Influence of nuclear tracks on the coercivity of single crystalline (Gd,Bi)3(Fe,Ga)5O12 LPE garnet films

The domain wall coercivity in single-crystalline liquid-phase epitaxial (LPE) garnet films is much too low for high-density information storage application. The defect density has to be increased by roughly 5 orders of magnitude to achieve storage densities of up 10⁶ bit/cm². A sensitive control of the coercivity can be attained with nuclear tracks from high-energy (1.4 MeV/nucleon) Xe or U ions with densities ranging from 10⁷ to 10¹⁰ cm^-2.     

自组装有机分子薄膜的可逆超高密度信息存储

信息技术的迅速发展对信息存储密度提出了越来越高的要求，采用自组装方法研究了有机分子4’-氰基-2，6-二甲基-4-羟基偶氮苯（4’cyano-2，6-dimethyl-4-hydroxy azobenzene）的成膜特性．通过在扫描隧道显微镜的针尖和基底之间加脉冲电压在薄膜上进行信息点的写入，得到了直径为1．8nm的信息点，并分析了信息点形成的机理．     

固体浸没透镜用于飞秒三维光存储研究

为进一步提高光存储密度，利用固体侵没透镜（SIL）与数值孔径为0.55的长工作距离物镜对飞秒激光脉冲进行聚焦，完成了PMMA及石英介质上的存储实验,并对聚焦物镜焦点与SIL底面离焦时的介质内焦点位置和系统的数值孔径进行了模拟。实验结果表明：当聚焦物镜焦点与SIL底面适当离焦时，实际聚焦在介质内的焦点深度不断加深，且系统的有效数值孔径不断增大。利用这一结果，在距PMMA表面20μm的地方得到了点间距1μm，层间距2.5μm的6层空间点阵；在距石英介质表面15μm的地方获得了点间距为0.6μm，层间距为2.5μm的5层空间点阵，其存储密度可达1.1×1012bits/cm3。     

缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C₆₀异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39 V分别提高到0.58 V、0.55 V,转换效率从0.36%提高到0.44%,短路电流从1.92 mA/cm²分别降低到1.77 mA/cm²、1.81 mA/cm²,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10 nm时,器件短路电流密度减少到0.35 mA/cm².开路电压随着厚度的增加逐渐增加,从1 nm时的0.43 V增加10 nm时0.63 V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

Local field emission of electrons from an individual boron nanowire at nanometer electrode separation

The field electron emission properties of an individual β-rhombohedral boron nanowire (β-r BNW) with electrode separation at nanoscale have been studied by ultrahigh vacuum four-probe scanning tunneling microscope (STM) system. A reproducible and stable emission current can be obtained. The maximal emission current density of individual boron nanowire is about 5 × 10⁴ A/cm² at a low bias voltage (80 V). An obvious deviation from the Fowler-Nordheim (FN) theory appears, when the electrode separation reduced below 120 nm. This deviation is tentatively assumed to due to the invalidation of free electron cloud approximation in FN theory.     

超高密度信息存储／分子存储及其存储机理

在有机功能纳米薄膜上通过扫描隧道显微技术实现了超高密度的信号存储,存储点的大小在1．3nm左右,存储点间距为1．5nm,相应的存储密度为10^13bits/cm^2,实验与理论计算的结果表明,其存储机理是薄膜的导电性质的变化。     

Use of two-photon excitation for erasable-rewritable three-dimensional bit optical data storage in a photorefractive polymer

We report what is believed to be the first use of a photorefractive polymer in erasable-rewritable three-dimensional bit optical data storage under two-photon excitation. We successfully demonstrate writing, erasing, and rewriting of multilayered information in a photorefractive polymer consisting of 2,5-dimethyl-4-(p-nitrophenylazo)anisole, 2,4,7-trinitro-9-fluorenone, 9-ethylcarbazole, and poly(N-vinylcarbazole). A three-dimensional bit density of 5 Gbits/cm(3) is achieved by two-photon absorption under pulsed beam illumination at an infrared wavelength of 800 nm in the recording process. Complete erasing of the recording information is achieved by use of ultraviolet illumination.