共查询到19条相似文献,搜索用时 204 毫秒
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用于彩色滤光片的低阻低应力ITO透明导电膜 总被引:2,自引:0,他引:2
探讨了用于彩色滤光片的低电阻和低压应力的ITO透明导电膜工艺。用磁控溅射方法在不同温度的衬底上制备了ITO薄膜。研究了膜形衬底温度与膜结晶化程度的关系,以及膜形衬底温度对膜电阻和压应力的影响。对不同衬底温度下形成的ITO薄膜进行了退火处理,并对退火后的ITO薄膜的电阻和压应力特性进行了分析。结果表明,采用室温沉积非晶态ITO膜,在真空退火下可获得低电阻、低压应力的多晶相ITO膜。 相似文献
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由于尺寸效应和晶界效应的影响,纳米薄膜在导电和导热方面呈现出与体材料不同的性质.本文实验研究了不同厚度(20~54 nm)金薄膜在不同温度(100~340 K)的导电、导热性质.测量结果显示,薄膜的电导率和热导率比体材料小,洛伦兹数比体材料大,Wiedemann-Franz定律不再成立.随着厚度增加,薄膜的电导率,热导率和电阻温度系数都增加.薄膜热导率随温度变化趋势与体材料相反,随着温度升高而升高.电导率随温度变化趋势与体材料相同,随着温度升高而降低;但薄膜没有体材料对温度变化敏感,导致电阻温度系数下降. 相似文献
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氮化硅纳米薄膜非平衡热导率实验研究 总被引:1,自引:1,他引:0
3ω实验方法是一种可以对薄膜热导率进行瞬时测量的方法。根据3ω方法测试原理,搭建了薄膜导热系数测试平台,并且分别测试低频率段和高频段薄膜与基底的温升以及薄膜热导率。测试结果表明:Si3N4薄膜的热导率随温度的升高而增大;高频段下,热导率受频率影响大,误差大;在低频段下薄膜热导率与频率变化基本无关;基于电子与声子的局部热平衡运输方程假设,S i3N4薄膜的热导率具有极度非平衡性;通过比较电阻、热导率与温度的关系可以看出加热器的尺寸大小会影响薄膜的热导率,最佳加热器的宽度选用20μm左右。 相似文献
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研究了MgB2超导薄膜正常态电阻的影响因素,探讨了与之相应的超导电性机制。MgB2超导薄膜样品采用两步异位退火的Mg扩散方法制备,通过电阻~温度曲线测量、扫描电子显微镜形貌观测和光学金相显微镜观察等方法研究了所制备薄膜的基本特性。实验结果表明,先驱硼薄膜的纯度严重影响着所生成的MgB2超导薄膜的转变温度,退火温度越高,影响越大;退火温度高的样品,正常态电阻大;退火时间长的样品正常态电阻大。 相似文献
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采用了一种用离子束增强沉积从V2O5粉末直接制备VO2薄膜的新方法,将纯度为997%的V2O5粉末压成溅射靶,在用Ar离子束溅射的同时,用氩氢混合束对沉积膜作高剂量离子注入,使沉积膜中V2O5的V—O键断裂,进而被注入的氢还原,退火后获得热电阻温度系数(TCR)高达4%的VO2薄膜.高剂量的氩氢混合束注入对薄膜引入应力,使薄膜的转换温度降低、电阻温度曲线斜率变大,是薄膜TCR增大的原因
关键词:
离子束增强沉积
VO2薄膜
热电阻温度系数 相似文献
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Yao YaoAuthor Vitae Xiangdong ChenAuthor VitaeHuihui GuoAuthor Vitae Zuquan WuAuthor Vitae 《Applied Surface Science》2011,257(17):7778-7782
In this paper, we demonstrated that chemically derived graphene oxide (GO) thin film as a humidity sensitive coating deposited on quartz crystal microbalances (QCMs) for humidity detection. By exposing GO thin film coated QCMs to various relative humidity (RH) environments at room temperature, the humidity sensing characteristics of the QCMs such as sensitivity and linearity, response and recovery, humidity hysteresis were investigated. The experiment results show that GO thin film coated QCMs exhibit an excellent humidity sensing performance. Moreover, the possible humidity sensing mechanism of GO thin film coated QCMs was also investigated by monitoring the crystal's motional resistance change. It is suggested that the frequency response of the QCMs is dependent on water molecules adsorbed/desorbed masses on GO thin film in the low RH range, and on both water molecules adsorbed/desorbed masses on GO thin film and variations in interlayer expansion stress of GO thin film derived from swelling effect in the high RH range. 相似文献
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T. Yu Y.-F. Chen Z.-G. Liu L. Sun S.-B. Xiong N.-B. Ming Z.-M. Ji J. Zhou 《Applied Physics A: Materials Science & Processing》1996,64(1):69-72
The semiconductive perovskite-type oxide SrFeO3-x (x<0.16) (SFO) thin films have been directly fabricated on (001)SrTiO3 and (001)LaAlO3 single crystal substrates by pulsed laser deposition(PLD) under high oxygen partial pressure of 100 Pa. The SFO thin films
were (110) oriented. The x-ray photoelectron spectroscopy (XPS) analysis showed that the surface of SFO thin film has strong
gas absorption capability. The resistance versus temperature has been measured in the temperature range from 77 K to 300 K.
The SFO thin film showed typical semiconductive property. Dependence of resistance of SFO thin film on oxygen pressure was
measured and result showed that the SFO thin film had better oxygen sensitive property.
Received: 14 May 1996/Accepted: 15 August 1996 相似文献
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Influence of Zr_(50)Cu_(50) thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films 下载免费PDF全文
Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show(100)and(002) unique preferential orientations, respectively. After inserting Zr(50)Cu(50) layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO(100 nm)/Zr(50)Cu(50)(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr(50)Cu(50)(4 nm) film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology. 相似文献
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A. Sikora A. Berkesse O. Bourgeois J.-L. Garden C. Guerret-Piécourt A.-S. Loir F. Garrelie C. Donnet 《Applied Physics A: Materials Science & Processing》2009,94(1):105-109
We report on electrical measurements and structural characterization performed on boron-doped diamond-like carbon thin films
deposited by femtosecond pulsed laser deposition. The resistance has been measured between 77 and 300 K using four probe technique
on platinum contacts for different boron doping. Different behaviours of the resistance versus temperature have been evidenced
between pure DLC and boron-doped DLC. The a-C:B thin film resistances exhibit Mott variable range hopping signature with temperature.
Potential applications of DLC thin films to highly sensitive resistive thermometry is going to be discussed. 相似文献
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Daeho Lee Heng Pan Seung Hwan Ko Hee K. Park Eunpa Kim Costas P. Grigoropoulos 《Applied Physics A: Materials Science & Processing》2012,107(1):161-171
A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new
process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed
laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating
process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity
increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic
process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including
the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning
speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75×10−2 Ω cm, exhibiting a factor of 105 higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited,
impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin
film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance
test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor,
demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors. 相似文献
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Chae-Seon Hong Seok-Joo Wang Hyung-Ho Park Ross H. Hill 《Applied Surface Science》2006,252(21):7739-7742
Direct patterning of ZnO thin film was realized without photoresist and dry etching by photochemical solution deposition. Photosensitive ortho-nitrobenzaldehyde was introduced into the solution precursors as a stabilizer and contributed to form a cross-linked network structure during photochemical reaction. Ag nanoparticles were prepared with uniform size distribution using trisodium citrate as a capping agent to incorporate into ZnO thin film in order to reduce the electrical resistance of the film. The optical and electrical properties of ZnO film with or without Ag nanoparticles after anneal at various temperatures were investigated. The reduction in transmittance with the increase in anneal temperature was observed and also the increase in the electrical resistance was found. The increase in the surface roughness of ZnO film and the decrease of surface oxygen deficiencies were mainly responsible for the decrease in transmittance and the increase in electrical resistance, respectively. 相似文献
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The activation energy for electrotransport in thin aluminum films was measured by a resistometric technique involving several individual resistance measurements along the stripe. An equation was derived which relates the rate of resistance change to the ion velocity.A thin film thermocouple which is free of any loss of heat was used to monitor the temperature of the stripe. This thermocouple was calibrated by the melting points of pure metals placed on the film.The activation energy for electrotransport in thin aluminum films was found to be temperature dependent and to vary between 0.45 and 0.72 eV in a temperature range between 220 and 360°C.The average ion velocity in the grain boundaries due to electrotransport was found to be around in agreement with the literature. 相似文献