Na0.25K0.25Bi0.5TiO3无铅压电陶瓷的介电特性研究

用固相反应法制备了Na0.25K0.25Bi0.5TiO3(NKBT50)陶瓷,研究了该陶瓷在室温至400℃温度范围内的介电性能.发现该陶瓷的介电温谱与烧结气氛、极化状态有关.在空气中烧结的未极化样品在70℃附近存在介电和损耗峰,而极化后及在氧气氛中烧结的样品并不存在该介电、损耗峰.分析认为70℃的介电和损耗峰与氧空位形成的缺陷偶极子的极化弛豫有关.热激电流显示,陶瓷的去极化温度为225℃,与此相对应的介电、损耗峰也与氧空位有关.     

La掺杂SrBi4Ti4O15铁电材料性能研究

按x=0.00，0.10，0.25，0.50，0.75和1.00，采用固相烧结工艺，制备了不同La掺杂量的SrBi_4-xLa_xTi₄O₁₅的陶瓷样品. 用x射线衍射对其微结构进行了分析，并测量了铁电、介电性能.结果发现，La掺杂未改变SrBi₄Ti ₄O₁₅的晶体结构.随掺杂量的增加，样品的矫顽场(E_c)下降，剩余极化(2P_{关键词： 4-x}La_xTi₄O₁₅')" href="#">SrBi_4-xLa_xTi₄O₁₅ La掺杂 铁电性能 相变温度 弛豫铁电     

等静压下0.75Pb（Mg1/3Nb2/3）O3-0.25PbTiO3陶瓷的介电性能研究

研究了等静压对0.75Pb（Mg_1/3Nb_2/3）O₃-0.25PbTiO₃（PMN-25PT）陶瓷介电温谱的影响,PMN-25PT剩余极化随等静压变化和等静压压致相变.结果表明,随着压力增加,PMN-25PT的介电峰值温度T_m降低,/+{dT_m}/-{dP}≈-4℃/kbar,极化弛豫增强;剩余极化随压力增加连续减小;介电常数对压力的依赖关系与对温度场的依赖相似,压力诱导PMN-25PT发生弛豫铁电—顺电相变,相变为宽化的渐变过程,频率色散和极化弛豫更加强烈和普遍. 关键词： 铌镁酸铅-钛酸铅 等静压 介电弛豫 压致相变     

简化共沉淀法制备CaCu3Ti4O12陶瓷及其介电性能研究

具有巨介电常数的CaCu₃Ti₄O₁₂陶瓷是一种理想的高储能密度电容器材料.本文以草酸为沉淀剂、以乙酸铵为调节pH值的定量缓冲剂,获得制备CaCu₃Ti₄O₁₂陶瓷的简化共沉淀法.确定了pH=30为制备前驱粉料的最佳反应条件.通过显微分析和介电性能测量,发现在1040℃—1100℃范围内,随着烧结温度的提高,陶瓷的品粒尺寸增大,非线性系数上升,电位梯度和介电损耗下降,1100℃烧结的试样tanδ最低达到0.04.认为CaCu₃Ti₄O₁₂陶瓷介电损耗包含直流电导分量、低频松弛损耗和高频松弛损耗.低频松弛活化能为0.51 eV.,对应于晶界处的Maxwell-Wagner松弛极化;高频松弛过程活化能为0.10 eV,对应晶粒内部的氧空位缺陷.烧结温度的升高导致晶界电阻下降.     

直流老化对CaCu3Ti4O12陶瓷介电性能的影响

在电场为3.5 kV/cm的条件下, 对CaCu₃Ti₄O₁₂陶瓷进行了60 h的直流老化, 研究了老化过程对CaCu₃Ti₄O₁₂陶瓷介电性能和电气特性的影响. J-E特性测试结果表明, 直流老化导致CaCu₃Ti₄O₁₂陶瓷击穿场强、非线性系数和势垒高度明显降低. 介电性能测试结果表明, 低频介电常数和介电损耗明显增大, 并且介电损耗随频率的变化遵从Debye弛豫理论, 可分解为直流电导损耗和弛豫损耗, 直流老化主要导致了电导损耗的增加. 在低温233 K, 介电损耗谱中出现两个弛豫峰, 其活化能分别为0.10, 0.50 eV, 认为对应着晶粒和畴界的弛豫过程, 且不随直流老化而变化. 通过电模量谱对CaCu₃Ti₄O₁₂陶瓷的弛豫过程进行了表征, 发现直流老化导致的界面空间电荷在外施交变电场的作用下符合Maxwell-Wagner极化效应, 并在低频区形成新的弛豫峰. 在高温323-473 K的阻抗谱中, 晶界弛豫峰在直流老化后明显向高频移动, 其对应的活化能从1.23 eV 下降到0.72 eV, 晶界阻抗值下降了约两个数量级. 最后, 建立了CaCu₃Ti₄O₁₂陶瓷的阻容电路模型, 分析了介电弛豫过程与电性能之间的关联.     

钇和镧掺杂氧化铝陶瓷的热导及其介电弛豫特性研究

采用氧化物固相反应法,制备出纯氧化铝陶瓷及其分别掺杂稀土元素钇和镧的陶瓷样品.测量了样品的结构、介电特性和热导性能;研究了烧结温度对掺杂不同稀土元素的陶瓷样品的性能的影响.X射线衍射结果表明1500℃烧结后陶瓷样品形成了单一的固溶体.而氧化铝的热导率达到8.60W/（m·K）,样品的介电性能稳定.我们发现掺杂Y³⁺和La³⁺的氧化铝陶瓷存在介电弛豫现象,并对该现象进行了机理分析.     

Al2O3-Y2O3-ZrO2三相复合陶瓷的介电谱研究

采用传统的固相反应法,在1400–1500 ℃下烧结,制备得到Al₂O₃-Y₂O₃-ZrO₂三相复合陶瓷.样品的结构、形貌和电性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)及介电谱表征.XRD表明此三相复合体系无其他杂相,加入Y₂O₃及ZrO₂后使得Al₂O₃成瓷温度降低;SEM表明此体系晶粒直径为200–500 nm,并且样品随烧结温度的升高而变得更加致密,晶界更加清晰;介电损耗谱中出现峰值弛豫现象,根据Cole-Cole复阻抗谱得出其为非德拜弛豫. 关键词： 2O₃-Y₂O₃-ZrO₂三相陶瓷')" href="#">Al₂O₃-Y₂O₃-ZrO₂三相陶瓷 介电弛豫 阻抗谱 热导率     

ZnO压敏陶瓷介电损耗的温度谱研究

利用Novocontrol宽频介电谱仪在-100—20 ℃温度范围内测量了ZnO-Bi₂O₃系压敏陶瓷的介电频谱,其频率范围为10^-2—10⁶ Hz. 研究表明： ZnO压敏陶瓷特征损耗峰的活化能分别为0.26和0.36 eV,结合实验条件、理论计算结果及其他现象的分析排除了特征损耗峰源于阴极电子注入、夹层极化和偶极子转向极化的可能.热刺激电流（TSC）谱共出现三个峰,其中高温峰对应于TSC实验加压过程引入的热离子极化,而中温峰和低温峰对应于介电损耗峰. 在分析的基础上,提出了ZnO压敏陶瓷的特征损耗峰起源于耗尽层内本征缺陷的电子弛豫过程. 关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热刺激电流     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

氧含量对CaCu3Ti4O12巨介电常数和介电过程的影响

本文研究了在真空、空气和氧气中烧结制备的三种 CaCu₃Ti₄O₁₂陶瓷材料的介电特性. 交流阻抗测量结果表明在10—300 K温度范围, 三种样品的介电温谱中均出现三个平台, 其电阻实部和电容虚部在相应温度出现损耗峰, 真空条件烧结的样品具有较高的介电平台和较明显的电阻实部与电容虚部峰值, 表明氧含量和氧空位对CaCu₃Ti₄O₁₂的介电性质具有重要影响, 介电温谱出现的三个平台分别源于晶粒、晶界及氧空位陷阱.温谱分析表明晶粒的激活能与烧结气氛有较大关系,氧空位引起的电子短程跳跃及跳跃产生的极化子是晶粒电导和电容的主要起源.氧空位陷阱的激活能基本与烧结气氛无关,约为0.46 eV. 氧空位对载流子的陷阱作用是CaCu₃Ti₄O₁₂ 低频高介电常数的重要起源.     

Investigation on dependence of BiFeO3 dielectric property on oxygen content

The influence of oxygen content on the dielectric property of BiFeO3 ceramics is studied by experiment and firstprinciples calculation.The experimental result demonstrates that the dielectric constant of BiFeO3 is strongly dependent on introduced oxygen and oxygen vacancies.By comparison with BiFeO3,the introduced oxygen and oxygen vacancies can lead to a reduction in dielectric constant of BiFeO δ at a lower frequency.The first-principles calculation also shows a similar result when photon energy is in a range of 2.0-4.1 eV.A likely explanation is that this oxygen content dependence may be ascribed to the distortion of Fe-O octahedron structure due to oxygen vacancies or excess oxygen ions in the crystal structure of BiFeO3.     

Comparison of optical properties between Wurtzite and zinc-blende Ga0.75Al0.25N

In order to compare optical properties of Wurtzite and zinc-blende Ga_0.75Al_0.25N and lay a foundation for preparation of Ga_0.75Al_0.25N photocathodes, absorption coefficient, complex refractive index, dielectric function, reflectivity and loss function of Ga_0.75Al_0.25N in two forms are calculated using first principle based on density functional theory. Results show that zinc-blende Ga_0.75Al_0.25N owns smaller band gap than Wurtzite Ga_0.75Al_0.25N, and its conduction band is more broad. The optical properties differences of two structures mainly occur at the range of 8.6–26.0 eV. The peaks of imaginary dielectric function and absorption curves are at higher energy point for zinc-blende Ga_0.75Al_0.25N. The highest absorption of Wurtzite Ga_0.75Al_0.25N is 351386.171/cm at 11.05 eV, which is smaller than zinc-blende of 437809.895/cm at 13.84 eV. The average reflectivity of Wurtzite Ga_0.75Al_0.25N is lower than that of zinc-blende Ga_0.75Al_0.25N. The results are conductive for designing component structures of Ga_0.75Al_0.25N photocathodes.     

Mechanical properties and electronic structure of TiC,Ti0.75W0.25C,Ti0.75W0.25C0.75N0.25, TiC0.75N0.25 and TiN

The first-principles calculations are performed to investigate the mechanical properties and electronic structure of TiC, Ti_0.75W_0.25C, Ti_0.75W_0.25C_0.75N_0.25, TiC_0.75N_0.25 and TiN. Density functional theory and ultrasoft pseudopotentials are used in this study. From the formation energy, it is found that nitrogen can increase the stability of TiC. The calculated elastic constants and elastic moduli of TiC compare favorably with other theoretical and experimental values. Tungsten and nitrogen are observed to significantly increase the bulk, shear and Young's modulus of TiC. Through the analysis of B/G and Cauchy pressure, tungsten can significantly improve the ductility of TiC. The electronic structure of TiC, TiN, Ti_0.75W_0.25C, Ti_0.75W_0.25C_0.75N_0.25, and TiC_0.75N_0.25 are used to describe nonmetal–metal and metal–metal bonds. Based on the Mulliken overlap population analysis, the hardness values of TiC, Ti_0.75W_0.25C, Ti_0.75W_0.25C_0.75N_0.25, TiC_0.75N_0.25 and TiN are estimated.     

Study on dielectric and magnetic properties of Ho3Fe5O12 ceramics

Ho₃Fe₅O₁₂ ceramics with garnet structure were prepared by the solid-state reaction method. The results revealed the existence of Fe²⁺ ions have intensive influence on dielectric and magnetic properties of Ho₃Fe₅O₁₂ ceramics, which could be further confirmed by oxygen treatment. With a magnetic field lower than 10 kOe, the ME coefficient reaches 33 ps m⁻¹ at room temperature. And the ME coupling was further verified by dielectric anomaly near Néel temperature.     

Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5 film prepared by magnetron sputtering

The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.     

Effects of (LiCe) co-substitution on the structural and electrical properties of CaBi2Nb2O9 ceramics

The piezoelectric, dielectric, and ferroelectric properties of the (LiCe) co-substituted calcium bismuth niobate (CaBi₂Nb₂O₉, CBNO) are investigated. The piezoelectric properties of CBNO ceramics are significantly enhanced and the dielectric loss tanδ decreased. This makes poling using (LiCe) co-substitution easier. The ceramics (where □ represents A-site Ca²⁺ vacancies, possess a pure layered structure phase and no other phases can be found. The Ca_0.88(LiCe)_0.04□_0.04Bi₂Nb₂O₉ ceramics possess optimal piezoelectric properties, with piezoelectric coefficient (d₃₃) and Curie temperature (T_C) found to be 13.3 pC/N and 960 ℃, respectively. The dielectric and piezoelectric properties of the (LiCe) co-substituted CBNO ceramics exhibit very stable temperature behaviours. This demonstrates that the CBNO ceramics are a promising candidate for ultrahigh temperature applications.     

Synthesis and ion conductivity of (Bi2O3)0.75(Dy2O3)0.25 ceramics with grain sizes from the nano to the micro scale

Using (Bi₂O₃)_0.75(Dy₂O₃)_0.25 nano-powder synthesized by reverse titration co-precipitation method as raw material, dense ceramics were sintered by both Spark Plasma Sintering (SPS) and pressureless sintering. According to the predominance area diagram of Bi-O binary system, the sintering conditions under SPS were optimized. (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with relative density higher than 95% and an average grain size of 20 nm were sintered in only 10 min up to 500 °C. During the pressureless sintering process, the grain growth behavior of (Bi₂O₃)_0.75(Dy₂O₃)_0.25 followed a parabolic trend, expressed as D² − D₀² = Kt, and the apparent activation energy of grain growth was found to be 284 kJ mol^− 1. Dense (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with different grain sizes were obtained, and the effect of grain size on ion conductivity was investigated by impedance spectroscopy. It was shown that the total ion conductivity was not affected by the grain size down to 100 nm, however lower conductivity was measured for the sample with the smallest grain size (20 nm). But, although only the δ phase was evidenced by X-ray diffraction for this sample, a closer inspection by Raman spectroscopy revealed traces of α-Bi₂O₃.     

Photoluminescence at room temperature in Ba0.5Sr0.5TiO3 ceramics

We present in this paper the experimental results of photoluminescence spectra of Ba_0.5Sr_0.5TiO₃ ceramics. An emission band centered at about 920 nm has been observed at room temperature. When we change the amount of oxygen vacancies in these samples by thermal treatment, these samples show an enhancement of luminescence. Our experimental results indicate that the origin of the photoluminescence is related to the oxygen vacancies in these samples.