Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

Parasitic bipolar amplification in single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in single event transient (SET) current of single transistor and its temperature dependence are studied. We quantify the contributions of different current components in SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of single transistor.     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

锗硅异质结晶体管单粒子效应激光微束模拟

对国产锗硅异质结双极晶体管(SiGe HBT)进行了单粒子效应激光微束辐照试验,观测SiGe HBT单粒子效应的敏感区域,测试不同外加电压和不同激光能量下SiGe HBT集电极瞬变电流和电荷收集情况,并结合器件结构对试验结果进行分析。试验结果表明:国产SiGe HBT位于集电极/衬底结内的区域对单粒子效应敏感,波长为1064 nm的激光在能量约为1.5 nJ时诱发SiGe HBT单粒子效应,引起电流瞬变。入射激光能量增强,电流脉冲增大,电荷收集量增加;外加电压增大,电流脉冲的波峰增大;SiGe HBT的单粒子效应与外加电压大小和入射激光能量都相关,电压主要影响瞬变电流的峰值,而电荷收集量主要依赖于入射激光能量。     

Recovery of single event upset in advanced complementary metalben oxide semiconductor static random access memory cells

Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer (LET) threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.     

续流二极管续流瞬态反向恢复电压尖峰机理研究

电力电子变流装置中的开关续流元件功率二极管由续流到截止转换的反向恢复过程中会在负载上产生电压尖峰,且短时续流下电压尖峰会很大,极易造成器件过压失效. 为了有效指导电力电子装置的可靠性设计,基于半导体物理和功率二极管基本结构,深入论述了PIN结构续流二极管开关瞬态工作机理,利用存储电荷的分析方法推导出二极管续流瞬态下的反向恢复电压尖峰机理及其随续流时间的变化规律:电压尖峰在短时续流下较大,随续流瞬态时间的增大而减小. 以绝缘栅双极型晶体管和续流二极管组成的两电平半桥逆变单元为例进行实验,结果表明:二极管续流瞬态发生反向恢复的电压尖峰随续流瞬态时间的增大近似呈指数规律减小,待续流电流稳定后,电压尖峰趋于常数,并最终随着续流过程的结束而进一步减小直至恒定,验证了理论分析的正确性. 对完善续流二极管反向恢复机理以及提高电能变换装置的可靠性具有一定的理论意义和应用价值. 关键词： 续流二极管 正向导通 反向恢复 电导率调制     

Marx调制器单元设计和叠加测试

 基于单元器件的成功研制,介绍了Marx调制器单元充放电回路、电压和电流的实时监测以及控制系统和连锁保护等功能的设计和实现。对IGBT固态开关的静态、动态均压进行分析和模拟,采用RCD缓冲电路实现IGBT的动态均压;对控制系统改进和优化,设计了专用电源转换模块;分压电路和电流霍尔采样回路分别实现调制器单元电压和电流的检测;连锁保护功能由控制系统和继电器控制完成。所有部件按照电气标准设计在调制器单元支架上。经过测试的4个单元进行了叠加试验,4个单元总输出24 kV,各器件在高压试验中工作正常。     

Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor(Fin FET)technology. However, the studies of charge sharing induced single-event transient(SET) pulse quenching with bulk Fin FET are reported seldomly. Using three-dimensional technology computer aided design(3DTCAD) mixed-mode simulations,the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk Fin FET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing(RBB), the circuit with forward body-biasing(FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least.This can provide guidance for radiation-hardened bulk Fin FET technology especially in low power and high performance applications.     

基于Boost闭环控制的恒峰值双极性脉冲发生器的研制北大核心CSCD

在肿瘤消融、污水处理等领域的脉冲功率技术应用中,研究发现双极性电脉冲往往比单极性电脉冲效果更佳,这极大地刺激了双极性高压脉冲电源的研发需求。设计了一台基于Boost闭环控制的恒峰值双极性脉冲发生器,该发生器结合boost电路与Marx发生器的特点,实现了具有升压功能的双极性脉冲的产生,且利用峰值检测电路对双极性脉冲发生器的输出峰值进行取样,并反馈到DSP处理器,实现峰值电压闭环控制,从而实现双极性脉冲恒定峰值的输出。为了验证提出的拓扑电路的可行性与稳定性,对5级恒峰值双极性脉冲发生器进行了仿真和实验研究。实验结果表明,当输入电压在100 V时,可产生重复频率5 kHz、脉冲宽度5~10μs、电压幅值为±2.0 kV的恒峰值双极性脉冲波形。该脉冲电源使用模块化设计,便于级联,结构紧凑,可灵活输出恒峰值的双极性或单极性正(负)脉冲。     

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

The fabrication process dependent effects on single event effects(SEEs) are investigated in a commercial silicon–germanium heterojunction bipolar transistor(SiGe HBT) using three-dimensional(3D) TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.     

不同偏置影响锗硅异质结双极晶体管单粒子效应的三维数值仿真研究

针对国产锗硅异质结双极晶体管(SiGe HBT),采用半导体器件三维计算机模拟工具,建立单粒子效应三维损伤模型,研究不同偏置状态对SiGe HBT单粒子效应的影响.分析比较不同偏置下重离子入射器件后,各端口电流瞬变峰值和电荷收集量随时间的变化关系,获得SiGe HBT单粒子效应与偏置的响应关系.结果表明:不同端口对单粒子效应响应的最劣偏置不同,同一端口电荷收集量和瞬变电流峰值的最劣偏置也有所差异.载流子输运方式变化和外加电场影响是造成这种现象的主要原因.     

重离子导致的锗硅异质结双极晶体管单粒子效应电荷收集三维数值模拟

针对国产锗硅异质结双极晶体管(SiGe HBTs), 采用半导体器件模拟工具, 建立SiGe HBT单粒子效应三维损伤模型, 研究影响SiGe HBT单粒子效应电荷收集的关键因素. 分析比较重离子在不同位置入射器件时, 各电极的电流变化和感生电荷收集情况, 确定SiGe HBT电荷收集的敏感区域. 结果表明, 集电极/衬底结内及附近区域为集电极和衬底收集电荷的敏感区域, 浅槽隔离内的区域为基极收集电荷的敏感区域, 发射极收集的电荷可以忽略. 此项工作的开展为下一步采用设计加固的方法提高器件的抗辐射性能打下了良好的基础. 关键词： 锗硅异质结双极晶体管 单粒子效应 电荷收集 三维数值仿真     

正负双极性重复频率充电电源研制

针对紧凑型高功率脉冲驱动源的重复频率充电需求,开展了基于LC全桥串联谐振原理的恒流充电技术研究,并根据紧凑型Marx脉冲功率源的工作方式开展了电源关键参数设计,完成了一种正负双极性充电的紧凑型高压电源研制,实现20 ms内对单边等效负载电容为0.15μF的双极性Marx驱动源充电至±45 kV,平均充电功率大于15.5 kW。该电源采用单个高频高压变压器实现了正负双极性高电压同步输出;采用变压器、整流电路、隔离保护电路、电压检测电路一体化绝缘封装设计,既减小了装置体积又降低了高压绝缘风险;通过隔离保护、电磁屏蔽等设计有效解决了Marx发生器放电过程中瞬时高压信号对电源控制系统的干扰和损伤。     

Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor

Silicon-germanium(SiGe) hetero-junction bipolar transistor current transients induced by pulse laser and heav.y iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction.     

Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology

Three-dimensional (3D) TCAD simulations demonstrate that reducing the distance between the well boundary and N-channel metal-oxide semiconductor (NMOS) transistor or P-channel metal-oxide semiconductor (PMOS) transistor can mitigate the cross section of single event upset (SEU) in 14-nm complementary metal-oxide semiconductor (CMOS) bulk FinFET technology. The competition of charge collection between well boundary and sensitive nodes, the enhanced restoring currents and the change of bipolar effect are responsible for the decrease of SEU cross section. Unlike dual-interlock cell (DICE) design, this approach is more effective under heavy ion irradiation of higher LET, in the presence of enough taps to ensure the rapid recovery of well potential. Besides, the feasibility of this method and its effectiveness with feature size scaling down are discussed.     

Submicron particles trajectory and collection efficiency in a miniature planar DBD-ESP: Theoretical model and experimental validation

In this paper, the collection efficiency of a plane-to-plane dielectric barrier discharge electrostatic precipitator is investigated experimentally and theoretically using a new model. A parametric study is carried out to evaluate the effects of the applied voltage amplitude and frequency on submicron particles motion and collection within the size range from 0.18 to 0.7 μm. Results show that the amplitude of the particles oscillatory motion increases with the voltage and the particles diameter which increase their collection. The collection efficiency decreases at low frequencies because of the low charge of particles and at high frequencies because of particles fast oscillation.     

SOI部分耗尽SiGe HBT集电结空间电荷区模型

SOI上的薄膜异质SiGe晶体管通过采用"折叠"集电极,已成功实现SOI上CMOS与HBT的兼容.本文结合SOI薄膜上的纵向SiGe HBT结构模型,提出了包含纵向、横向欧姆电阻和耗尽电容的"部分耗尽 (partially depleted) 晶体管"集电区简化电路模型.基于器件物理及实际考虑,系统建立了外延集电层电场、电势、耗尽宽度模型,并根据该模型对不同器件结构参数进行分析.结果表明,空间电荷区表现为本征集电结耗尽与MOS电容耗尽,空间电荷区宽度随集电结掺杂浓度减小而增大,随集电结反偏电压提高而增大, 关键词： SOI SiGe HBT 集电区 空间电荷区模型     

Investigation of the performance of bipolar transverse plate ESP in the sintering flue control

In order to improve the particle collection efficiency of the electrostatic precipitator (ESP), a transverse plate ESP with bipolar discharge electrodes is proposed. The simulations of the velocity distribution have shown that when the inlet velocity is 1 m/s, within the range of 40 mm from electrode plate, the average velocities of windward side and leeward side are less than 0.7 m/s and 0.3 m/s respectively. It is clear that the velocity near the collection electrode plate of this bipolar ESP is much lower than that of the ordinary ESP at the same inlet velocity. This low velocity can lead to higher efficiency for fine dust collection due to the less dust re-entrainment in ESP. It is also found that the average velocities are getting lower when the distance between plates electrodes are greater than 150 mm in accordance with the simulations. The voltage current characteristics of the bipolar ESP are superior to the ordinary ESP. The pressure drop of the bipolar ESP is about 30% higher than that of the ordinary one. The dust penetration of the bipolar ESP is about 54% less than that of the ordinary ESP when the sintering dust with 25.405 μm mass median diameter is used as the test particulate under the condition of the electric field from 2.1 kV/cm to 3.2 kV/cm and the velocity from 1.0 m/s to 1.5 m/s.     

Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation

Fin FET technologies are becoming the mainstream process as technology scales down. Based on a 28-nm bulk pFin FET device, we have investigated the fin width and height dependence of bipolar amplification for heavy-ion-irradiated Fin FETs by 3D TCAD numerical simulation. Simulation results show that due to a well bipolar conduction mechanism rather than a channel(fin) conduction path, the transistors with narrower fins exhibit a diminished bipolar amplification effect, while the fin height presents a trivial effect on the bipolar amplification and charge collection. The results also indicate that the single event transient(SET) pulse width can be mitigated about 35% at least by optimizing the ratio of fin width and height, which can provide guidance for radiation-hardened applications in bulk Fin FET technology.     

双极性脉冲磁控溅射电源设计

双极性脉冲电源是磁控溅射系统中的关键设备之一。根据铌溅射处理装置的技术要求,研制了一套输出电压0~800 V可调、脉冲宽度20~200 μs可调、频率0~60 Hz可调、脉冲电流最大幅值约150 A的双极性脉冲电源,分别给出了该电源在水电阻负载和等离子体负载下的实验结果。设计上采用DSP控制开关电源的方式对储能电容器进行恒流充电;综合应用FPGA,PLC及触摸屏组成人机交互系统,控制输出光脉冲信号,经负压偏置驱动后使桥式结构的脉冲形成网络产生正负交替双极性脉冲。通过大量实验论证,该电源解决了等离子体负载放电打弧等问题,达到了理想的溅射效果,满足了指标要求。