单层FeSe薄膜/氧化物界面高温超导

单层FeSe/SrTiO₃界面增强超导的发现为理解高温超导机理提供了一个新的途径,也为实现新的高温超导体开拓了新思路.本文通过在SrTiO₃（001）表面高温沉积Mg进而沉积单层FeSe薄膜,制备出了FeSe/MgO双层/SrTiO₃异质结.利用扫描隧道显微镜研究了异质结的电学及超导特性,观测到约14–15 meV的超导能隙,比体相FeSe超导能隙值增大了5–6倍,与K掺杂双层FeSe/SrTiO₃的超导能隙值相当.这一结果可理解为能带弯曲造成的界面电荷转移和界面处电声耦合共同作用导致的超导增强.FeSe/MgO界面是继FeSe/TiO₂之后的一个新界面超导体系,为研究界面高温超导机理提供了新载体.     

FeSe/SrTiO3高温超导体中的电子条纹相

单层FeSe/SrTiO₃中的界面超导增强是近年来高温超导领域的重要发现.该体系中SrTiO₃衬底对FeSe的超导增强机制已被广泛研究,其调控作用主要表现为两个方面:电荷掺杂和界面电声耦合.然而,关于FeSe薄膜本身的电子特性研究还不够充分.本文介绍该体系超导增强机制的新进展:FeSe薄膜中的电子条纹相及其与超导的关联.通过扫描隧道显微镜结合分子束外延生长技术,对不同厚度的FeSe薄膜进行了系统研究.我们发现FeSe薄膜中电子倾向于排成条纹状结构,并观测到该条纹相随层厚变化显现出从短程到长程的演化.条纹相是一种电子液晶态,它源于薄层FeSe中被增强的电子关联作用.表面电子掺杂一方面会减弱FeSe薄膜中的电子关联作用,逐渐抑制条纹相;另一方面会诱导超导相变,而剩余的条纹相涨落会对超导电性带来额外增强.我们的结果加深了对低维界面超导体系的认识,也揭示了FeSe薄膜本征的特异性,完善了对FeSe/SrTiO₃超导增强机制的理解.     

高质量FeSe单晶薄膜的制备及相关性能表征

在铁基超导体中,FeSe具有最简单的晶体结构和化学组成,而且其超导转变温度具有较大的调控空间,因此适合作为超导机理研究和应用的载体.高质量样品的研制是物性研究和器件应用的前提,本文系统地研究了利用激光脉冲沉积技术制备FeSe薄膜的工艺条件,在多种衬底上成功地制备出高质量的β-FeSe薄膜,并首次实现了超导临界转变温度从小于2 K到14 K的连续调控,这为FeSe超导机理研究提供了样品支持.为探究FeSe薄膜超导电性变化的起因,从β-FeSe超导电性与晶格常数c正相关出发,基于简单的费米面填充假设,第一性原理计算可以很好地解释晶格常数c的变化规律,但该假设并不能完全符合角分辨光电子能谱实验给出的电子结构演变过程.因此β-FeSe薄膜的超导电性、晶格结构和电子结构三者之间的关系还有待澄清,该问题的解决将为FeSe超导机理研究提供重要的线索,而上述系列高质量的β-FeSe薄膜样品恰好能为该问题的研究提供理想的载体.本文根据实验和已有的相关研究结果,详细介绍了FeSe薄膜的脉冲激光沉积制备及其优化,以期为后续的薄膜研究应用提供参考.     

SrTiO3(001)表面上Au和N原子相互作用的第一性原理研究

采用基于密度泛函理论的第一性原理平面波赝势方法研究了SrTiO₃(001)表面上Au和N原子间相互作用的微观机理.通过比较分析N置换表面层O原子前后SrTiO₃(001)表面吸附Au原子体系的相关能量和电子结构,发现SrTiO₃(001)表面吸附Au原子和N替代表面层O原子的置换过程二者之间存在明显的"协同效应",即N原子置换SrTiO₃(001)表面层O原子的过程增强了相应表面吸附Au原子的稳定性,而SrTiO关键词： 表面结构 相互作用 第一性原理     

氧压对SrTiO3和SrNb0.2Ti0.8O3薄膜晶格参数的影响及激光感生热电电压效应

采用脉冲激光沉积技术制备了SrTiO₃和SrNb_0.2Ti_0.8O₃薄膜.X射线衍射分析表明在LaAlO₃(100)单晶平衬底上生长的SrTiO₃及SrNb_0.2Ti_0.8O₃薄膜是沿［001］取向的近外延生长.随着氧压在一定范围内逐渐增大,SrTiO₃薄膜的晶格参数减小,而SrNb_0.2Ti_0.8O₃薄膜的晶格参数先减小后增大.同时摸索出制备具有二维电子气超晶格(SrTiO₃/SrNb_0.2Ti_0.8O₃)_L的最佳氧压为1.0×10^-2Pa.另外在LaAlO₃(100)倾斜衬底上制备的SrNb_0.2Ti_0.8O₃薄膜中观察到激光感生热电电压效应. 关键词： 0.2Ti_0.8O₃薄膜')" href="#">SrNb_0.2Ti_0.8O₃薄膜 晶格参数 激光感生热电电压 脉冲激光沉积     

Sr/Si界面沉积SrTiO3初始生长阶段的扫描遂道显微术研究

本文工作利用脉冲激光沉积术(PLD)和超高真空扫描隧道显微术(UHV-STM),研究了在Sr/Si(001)-(2×1)衬底表面上真空室温沉积几个单层SrTiO₃薄膜的初始生长过程.经660 ℃退火处理后,Sr/Si衬底表面上形成了纳米岛状结构.经分析,这些纳米小岛为C49-TiSi₂和 C54-TiSi₂.实验结果表明,在没有氧气的情况下退火,Sr/Si界面无法有效阻止SrTiO₃薄膜与Si衬底之间的相互作用. 关键词： 脉冲激光沉积术(PLD) 扫描隧道显微镜(STM) 3')" href="#">SrTiO₃ 2')" href="#">C54-TiSi₂     

薄膜厚度对La1.85Sr0.15CuO4薄膜结构和超导电性的影响

使用直流同轴磁控溅射法,在SrTiO₃(STO)衬底上成功制备出c取向的La_1.85Sr_0.15CuO₄(LSCO)超导薄膜.通过电输运测量系统和X射线衍射仪研究了薄膜厚度对LSCO(x＝0.15)薄膜电学性质和晶体结构的影响.实验证明随着膜厚增加,(006)衍射峰的半高宽(Full Width at Half Maximum,FWHM)逐渐减小,薄膜的取向性增强,与此同时,薄膜的超导转变温 关键词： 1.85Sr_0.15CuO₄薄膜')" href="#">La_1.85Sr_0.15CuO₄薄膜 超导电性 晶体结构     

(BiFeO3)25/(La0.7Sr0.3MnO3)25 多层膜的光学和电学性质

采用射频磁控溅射方法在(001)SrTiO₃衬底上制备(001)取向的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜.光学测试结果表明,1.3-2.1 eV范围内,相对于衬底而言多层膜光吸收增强; BiFeO₃的带隙为2.7 eV. 另外,结合绝缘介质导电模型分析了所测得的电流-电压数据,在所测试的温度及电压下,所制备的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜的导电机理由空间电荷限制电导主导. 关键词： 多层膜 吸光度 空间电荷限制电导     

在蓝宝石上生长CeO2 缓冲层的原位双温工艺法及Tl-2212薄膜的技术改进

报道了在蓝宝石衬底上制备CeO₂缓冲层的原位双温工艺法及其对Tl₂Ｂa₂CaCu₂Ｏ₈（Tl-2212）薄膜超导特性的影响．XPS和AFM测试结果表明,采用原位双温工艺法制备缓冲层,具有工艺简单,薄膜表面光滑,衬底材料原子扩散量少等特点．在先驱膜的高温后退火过程中,40 nm厚的CeO₂薄膜就能有效地阻挡衬底材料对超导薄膜底层的扩散．随后制备厚度为530 nm的Tl-2212 关键词： Tl-2212超导薄膜 蓝宝石 氧化铈缓冲层 原位双温工艺法     

脉冲激光淀积BaTiO3薄膜的介电与铁电特性

用脉冲激光淀积方法在SrTiO₃衬底上制备了BaTiO₃/YBa₂Cu₃O_7-δ（铁电/超导）双层膜，X射线分析表明BaTiO₃薄膜是高度c取向的．对BaTiO₃薄膜的介电和铁电性能进行了实验研究．观察到铁电薄膜特有的电滞线和蝶型C-V曲线，薄膜呈现出较好的铁电性，在铁电随机存储等领域有重要的应用前景 关键词：     

SrTiO_3(001)衬底上多层FeSe薄膜的分子束外延生长

近几年,由于用分子束外延法在SrTiO_3衬底表面制备的单层FeSe具有很高的超导转变温度而引发了极大的研究热潮,随之而来的是对多层FeSe薄膜日益增长的研究兴趣.但目前还没有对成功生长高质量多层FeSe薄膜的详细报道.本文利用高能电子衍射仪(RHEED)实时监控在不同生长条件下制备的多层FeSe薄膜,发现在FeSe薄膜的生长初期,RHEED图像的强度演化基本符合台阶密度模型的描述特征,即台阶密度ρ正相关于衍射条纹强度.FeSe(02)衍射条纹的强度在第一生长周期内呈现稳定而明显的峰型振荡,而且不受高能电子掠射角的影响,最适合用来标定FeSe薄膜的厚度.结合扫描隧道显微镜对FeSe薄膜质量的原位观察,确定了制备多层FeSe薄膜的最佳生长条件,为FeSe薄膜的物性研究提供了重要的材料基础.     

Molecular beam epitaxy and superconductivity of stoichiometric FeSe and KxFe2_ySe2 crystalline films

Our recent progress in the fabrication of FeSe and KxFe2_ySe2 ultra thin films and the understanding of their superconductivity properties is reviewed. The growth of high-quality FeSe and KxFe2_ySe2 films is achieved in a well controlled manner by molecular beam epitaxy. The high-quality stoichiometric and superconducting crystalline thin films allow us to investigate the intrinsic superconductivity properties and the interplay between the superconductivity and the film thickness, the local structure, the substrate, and magnetism. In situ low-temperature scanning tunneling spectra reveal the nodes and the twofold symmetry in FeSe, high-temperature superconductivity at the FeSe/SrTiO3 interface, phase separation and magnetic order in KxFe2_ySe2, and the suppression of superconductivity by twin boundaries and Fe vacancies. Our findings not only provide fundamental information for understanding the mechanism of unconventional superconductivity, but also demonstrate a powerful way of engineering superconductors and raising the transition temperature.     

低维超导的实验进展

超导自发现以来, 已成为凝聚态物理领域最重要的方向之一. 近年来, 低维材料制备技术的进步使得一维或二维的超导特性实验研究成为可能. 本文在简要介绍超导现象的基础上, 重点回顾了近些年二维超导薄膜和一维超导纳米线的制备和电输运研究, 以及在低维超导体中发现的相移、近邻效应、铁磁超导相互作用和高温超导等新奇的现象, 并对该领域的进一步发展做出了展望.     

Phase transition-induced superstructures of β-Sn films with atomic-scale thickness

The ultrathin β-Sn(001) films have attracted tremendous attention owing to its topological superconductivity(TSC),which hosts Majorana bound state(MBSs) for quantum computation.Recently,β-Sn(001) thin films have been successfully fabricated via phase transition engineering.However,the understanding of structural phase transition of β-Sn(001)thin films is still elusive.Here,we report the direct growth of ultrathin β-Sn(001) films epitaxially on the highly oriented pyrolytic graphite(HOPG) substrate and the characterization of intricate structural-transition-induced superstructures.The morphology was obtained by using atomic force microscopy(AFM) and low-temperature scanning tunneling microscopy(STM),indicating a structure-related bilayer-by-bilayer growth mode.The ultrathin β-Sn film was made of multiple domains with various superstructures.Both high-symmetric and distorted superstructures were observed in the atomic-resolution STM images of these domains.The formation mechanism of these superstructures was further discussed based on the structural phase transition of β to α-Sn at the atomic-scale thickness.Our work not only brings a deep understanding of the structural phase transition of Sn film at the two-dimensional limit,but also paves a way to investigate their structure-sensitive topological properties.     

Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si（001） substrate

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films.In this paper,Co films with different thickness of Co Si2buffer layers were grown on Si(001)substrates.In order to investigate morphology,structure,and magnetic properties of films,scanning tunneling microscope(STM),low energy electron diffraction(LEED),high resolution transmission electron microscopy(HRTEM),and surface magneto-optical Kerr effect(SMOKE)were used.The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of Co Si2buffer layers.Few Co Si2monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality.Furthermore,the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process,which is the typical phenomenon in cubic(001)films.     

Observation of pseudogap in SnSe2 atomic layers grown on graphite

Superconducting metal dichalcogenides (MDCs) present several similarities to the other layered superconductors like cuprates. The superconductivity in atomically thin MDCs has been demonstrated by recent experiments, however, the investigation of the superconductivity intertwined with other orders are scarce. Investigating the pseudogap in atomic layers of MDCs may help to understand the superconducting mechanism for these true two-dimensional (2D) superconducting systems. Herein we report a pseudogap opening in the tunneling spectra of thin layers of SnSe₂ epitaxially grown on highly oriented pyrolytic graphite (HOPG) with scanning tunneling microscopy/spectroscopy (STM/STS). A significant V-shaped pseudogap was observed to open near the Fermi level (E_F) in the STS. And at elevated temperatures, the gap gradually evolves to a shallow dip. Our experimental observations provide direct evidence of a pseudogap state in the electron-doped SnSe₂ atomic layers on the HOPG surface, which may stimulate further exploration of the mechanism of superconductivity at 2D limit in MDCs.     

Structures and chemistry of the annealed SrTiO3(001) surface

Surface structures and chemistry of the annealed SrTiO₃(001) have been studied by scanning tunneling microscopy and Auger electron spectroscopy. Our STM results show that islands arc formed on an originally smooth surface after annealing in ultra high vacuum at a temperature of 1300°C. Tunneling spectra show that the islands exhibit a different electronic structure than that of SrTiO₃, with an apparent bandgap of 6 eV rather than 3.2 eV. Auger electron spectroscopy indicates that annealing yields strontium enrichment at the surface. The nature of the islands and change of surface chemistry are discussed in terms of correlation of the STM and Auger results.     

SrTiO_3(001)衬底上单层FeSe超导薄膜的分子束外延生长

在以前工作的基础上,进一步研究了SrTiO3(001)(STO)衬底上单层FeSe超导薄膜的分子束外延生长.首先,通过去离子水刻蚀、盐酸溶液腐蚀和纯氧气氛中退火等步骤,获得台阶有序、具有单一TiO2终止的原子级平整表面的STO衬底,这是前提条件.这个过程中酸的选择和退火过程中氧的流量是最为关键的因素.其次,在FeSe薄膜的分子束外延生长中,选择适当的Fe源和Se源束流以及衬底温度是关键因素.如选择适当,生长模式为step-?ow生长,这时得到的FeSe薄膜将是原子级平整的.最后一步为退火,这个过程会增强FeSe薄膜结晶性以及它与SrTiO3衬底间的结合强度.