PbTiO3/PbZr0.3Ti0.7O3/PbTiO3夹心结构铁电薄膜子晶层的优化

用Sol-Gel法制备了Pb_(1+x)TiO₃/PbZr_03Ti_07O₃/Pb_(1+x)TiO₃(PT/PZT/PT)夹心结构及PZT铁电薄膜,为了获得高质量的PT/PZT/PT夹心结构铁电薄膜,使用不同过量Pb配比(x)的PbTiO₃ (PT)层进行制备,以获得优化的PT子晶层.X射线 关键词： PT/PZT/PT 夹心结构 子晶 铁电薄膜     

锰位铁掺杂La0.67Sr0.33FexMn1-xO3薄膜的光诱导效应

分别采用溶胶-凝胶法和脉冲激光沉积的方法制备了La_067Sr_033Fe_xMn_1-xO₃(x=0, 005, 010, 015)系列块材和薄膜，研究了Fe部分替代对La_067Sr_033Fe_xMn_1-xO₃薄膜     

Nd掺杂对Bi4Ti3O12铁电薄膜的微结构和铁电性能的影响

利用溶胶-凝胶法在Pt/Ti/SiO₂/Si(100)衬底上制备了Nd掺杂Bi₄Ti₃O₁₂(Bi_4-xNd_xTi₃O₁₂, x=0.00,0.30,0.45,0.75,0.85,1.00,1.50)铁电薄膜样品.研究了Nd掺杂对Bi₄Ti₃O₁₂薄膜的微结构和铁电性能的影响.研究结果表明:Nd掺杂未改变Bi₄Ti₃O₁₂薄膜的基本晶体结构.在掺杂量x<0.45时,Nd³⁺只取代类钙钛矿层中的A位Bi³⁺.当x=0.45时,样品剩余极化强度达最大值,在270kV·cm^-1的电场下为32.7μC·cm^-2.掺杂量进一步增加时,结构无序度开始明显增大,Nd³⁺开始进入(Bi₂O₂)²⁺层,削弱其绝缘层和空间电荷库的作用,导致材料剩余极化逐渐下降.当掺杂量x达到1.50时,掺杂离子最终破坏(Bi₂O₂)²⁺层的结构,材料发生铁电-顺电相变.     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

多自旋态离子Co替代诱导La2/3Ca1/3MnO3体系的输运反常

利用具有多自旋态的Co离子进行Mn位替代，制备了La_2/3Ca_1/3Mn_1-xCo_xO₃ (0≤x≤0.15) 系列样品并研究了体系的结构和输运特性.结果表明，在替代范围内，样品呈现很好的单相结构，各晶格参数随替代量的增大而减小；Co替代导致体系出现电输运反常，具体表现为在居里温度T_C以下电阻-温度曲线的二次金属-绝缘转     

不同氮流量制备Mn3CuNx薄膜及其电、磁输运性质的研究

采用对靶磁控溅射方法在单晶Si(100)基片上制备了反钙钛矿结构的Mn₃CuN_x薄膜.通过控制制备过程中的反应气体氮气(N₂) 流量(N₂/Ar+N₂), 研究了氮含量对Mn₃CuN_x薄膜结构及物理性能的影响.分别利用X射线衍射仪、俄歇电子能谱、 原子力显微镜、X射线光电子能谱、物理性能测试系统和超导量子干涉仪, 对所制备薄膜的晶体结构、成分、表面形貌和电、磁输运性质进行了测试.结果表明:制备的薄膜均为反钙钛矿立方结构,且沿 (200) 晶面择优生长.随着氮含量的增大,薄膜表面粗糙度和颗粒度尺寸逐渐增大, 导致电阻率增加.氮含量对薄膜的电输运性质没有影响,所有薄膜电阻率均随着温度的降低逐渐增大, 呈现半导体型导电行为,这与对应的块体材料结果相反.Mn₃CuN_x薄膜随着测试温度的增大发生了 亚铁磁到顺磁的磁转变,且N含量的增大降低了磁有序转变温度,主要是由于N缺陷对Mn₆N八面体结构中 磁交换作用的影响所致.     

PbTiO3/PbZr0.3Ti0.7O3/PbTiO3夹心结构铁电薄膜子晶层的优化

用Sol-Gel法制备了Pb(1 x)TiO3/PbZr0.3Ti0.7O3/Pb(1 x)TiO3(PT/PZT/PT)夹心结构及PZT铁电薄膜,为了获得高质量的PT/PZT/PT夹心结构铁电薄膜,使用不同过量Pb配比(x)的PbTiO3 (PT)层进行制备,以获得优化的PT子晶层.X射线衍射和原子力显微镜分析结果表明PT层中过量Pb配比(x)对薄膜的微结构影响很大,只有PT层中Pb过量配比x＝0.10-0.15的薄膜为表面晶粒大小均匀致密的纯钙钛矿结构.X射线电子能谱对薄膜微区进行元素成分分析表明,对x=0.00的薄膜,在表面和界面处Pb明显的缺乏;而x=0.20时的薄膜,Pb则明显的过量.薄膜的铁电性能、疲劳特性和漏电流特性等电学性能与PT层中过量Pb配比(x)没有明显的变化趋势,但与薄膜的结晶性能密切相关.结晶性能较好的薄膜,其电学性能也较好.说明PT层中过量Pb配比(x)是通过影响PT子晶层自身的结晶,而影响整个薄膜的结晶行为,并进一步影响到整个薄膜的电学性能.因此,在其他工艺参数都相同时,PT层中合适的过量Pb配比应为x=0.10-0.15.优化的子晶层不仅能获得结晶性能较好的薄膜,而且薄膜的电学性能也好.     

Tb0.3Dy0.7－xPrx(Fe0.9Al0.1)1.95合金的磁致伸缩、自旋重取向和穆斯堡尔谱研究

系统研究了室温下Tb_0.3Dy_0.7-xPr_x(Fe_0.9Al_0.1)_1.95 (x=0，0.1，0.2，0.25，0.3，0.35)合金中稀土元素Pr替代Dy对晶体结构、磁致伸缩、各向异性和自旋重取向的影响. 结果发现，x≤0.1时，Tb_0.3Dy_0.7-xPr_x(Fe_0.9Al_0.1)_1.95完全保持MgCl₂立方Laves相结构，0.1<x≤0.3，有杂相出现并且随Pr替代量逐渐增多；晶格常数a随Pr含量x的增加缓慢增大. 磁致伸缩测量发现，随着替代量x的增多磁致伸缩减小；x>0.2时超磁致伸缩效应消失. 然而，x=0.1时合金的磁致伸缩略大于没有替代的，而且磁致伸缩随磁场更易趋于饱和，说明Pr替代有助于降低磁晶各向异性. 内禀磁致伸缩λ₁₁₁随Pr替代量x的增加接近线性增加. 由相对磁化率随温度的变化关系可以看出，自旋重取向温度随Pr替代量的增多呈先增后降趋势，在x=0.1处出现极大值. 穆斯堡尔效应表明，随Pr含量的增加Tb_0.3Dy_0.7-xPr_x(Fe_0.9Al_0.1)_1.95合金中易磁化轴可能在{110}面上绕主对称轴作微小转动，发生自旋重取向. 与Al元素替代效应相比，Pr替代Dy对自旋重取向的影响相对较小.     

Tb1－xDyxFe2－y-Fe掺杂BaTiO3多层膜中的磁电耦合

用溶胶-凝胶法制备了Fe掺杂BaTiO₃粉体，在1350℃下烧结成圆片状多晶样品，并与Tb_1-xDy_xFe_2-y胶合成磁电(ME)双层膜或三层膜.实验分析表明Fe：BaTiO₃依然是四方相钙钛矿结构，但是居里温度及相变潜热均略低于纯净BaTiO₃.研究了Tb_1-xDy_xFe_2-y-Fe∶BaTiO₃双层膜和Tb_1-xDy_xFe_2-y-Fe∶BaTiO₃-Tb_1-xDy_xFe_2-y三层膜的ME效应.在2.8×10⁴A/m的磁场下，两者的横向ME电压系数均达其峰值，分别为6.225和26.25mV·(A·m^-1)^-1·cm^-1.并且，用掺杂BaTiO₃制备的双层膜和三层膜的横向ME电压系数均为相同条件下用纯净BaTiO₃制备的双层膜和三层膜的横向ME电压系数的1.5倍.另外由于不含铅，锆等有害物质，符合环保要求，因此采用掺杂BaTiO₃制备的磁电效应器件具有深入研究和应用价值.     

GeO2-Bi2O3-MOx(MOx=WO3, BaO)玻璃近红外超宽带发光的研究

用高温熔融法制备了(99.5-χ) GeO₂-χBaO-0.5Bi₂O₃(χ=3, 6, 9mol%)与(99.5-φ)GeO₂-φWO₃-0.5Bi₂O₃(φ=3，6，9mol%)玻璃，测定了样品的发射光谱(800nmLD激发)、吸收光谱、荧光衰减和差热曲线.实验结果表明，在GeO₂-WO₃-Bi₂O₃系统玻璃中，随着WO₃含量的增加，在1260nm处的发光强度增强，荧光半高宽(FWHM)增宽，荧光寿命增长，而且玻璃的吸收边带发生明显的红移；在GeO₂-BaO-Bi₂O₃系统玻璃中，随着BaO含量的增加，玻璃在1290nm处发光强度增强，FWHM增宽，荧光寿命增长，吸收边带也有明显的红移.从吸收边带发生红移的情况，结合发射光谱和荧光衰减曲线特性，我们推断玻璃样品在近红外的宽带发光可能由Bi⁵⁺离子所引起.从荧光特性估算了玻璃的σ_p×τ和σ_p×Δλ值，这些玻璃均具有较小的σ_p×τ和较大的σ_p×Δλ特性，说明GeO₂-Bi₂O₃-MO_x(MO_x=WO₃, BaO) 系统玻璃是研制成近红外(O到S波段)超宽带光纤放大器的良好材料.     

High pyroelectric power generation of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 single crystal

We report the pyroelectric power generation of a relaxor ferroelectric 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN–PT) single crystal. For a temperature variation rate of 0.5 K/s, the PMN–PT generated a closed-circuit current of 10 nA and an open-circuit voltage of 1.1 V at room temperature. The pyroelectric current and voltage of the PMN–PT single crystal were proportional to the temperature variation rate and were sharply enhanced near the structural phase-transition temperature. Additionally, the PMN–PT pyroelectric generator produced stable power for excessive thermal cycling and was highly sensitive to random thermal fluctuations. Our results indicate the potential importance of PMN–PT for high-power pyroelectric generator applications.     

A polarized micro-Raman study of a 0.65PbMg1/3Nb2/3O3 - 0.35PbTiO3 single crystal

Polarized micro-Raman spectra of a 0.65PbMg_1/3Nb_2/3O₃-0.35PbTiO₃ (0.65PMN-0.35PT) single crystal poled in the [001] direction are obtained in a wide frequency range (50-2000 cm^-1) at different temperatures. The best fit to the Raman spectrum at 77 K is achieved using 17 Lorenzians to convolute into it, and this is proved to be a reasonable fit. According to the group theory and selection rules of overtone and combinational modes, apart from the seven Raman modes that are from first-order Raman scattering, the remaining ones are attributed to being from second-order Raman scattering. A comparison between the experimental results and theoretical predictions shows that they are in satisfactory agreement with each other. Our results indicate that at 77 K the sample belongs to the rhombohedral symmetry with the C_3v⁵ (R3m) space group (Z=1). In our study, on heating, the 0.65PMN-0.35PT single crystal undergoes a rhombohedral to tetragonal to cubic phase transition sequence. The two phase transitions occur at 340 and 440 K, which correspond to the disappearance of the soft mode near 106 cm^-1 recorded in VV polarization and the vanishing of the band around 780 cm^-1 in VH polarization, respectively.     

Orientation-dependent ferroelectricity of strained PbTiO3 films

PbTiO₃ is a simple but very important ferroelectric oxide that has been extensively studied and widely used in various technological applications. However, most previous studies and applications were based on the bulk material or the conventional [001]-orientated films. There are few studies on PbTiO₃ films grown along other crystalline axes. In this study, a first-principles calculation was performed to compute the polarization of PbTiO₃ films strained by SrTiO₃ and LaAlO₃ substrates. Our results show that the polarization of PbTiO₃ films strongly depends on the growth orientation as well as the monoclinic angles. Further, it is suggested that the ferroelectricity of PbTiO₃ mainly depends on the tetragonality of the lattice, instead of the simple strain.     

The first-principles study of ferroelectric behaviours of PbTiO3/SrTiO3 and BaTiOn/SrTiO3 superlattices

We have performed the first-principles calculation to investigate the origins of ferroelectricities and different po- larization behaviours of superlattices BaTiO3/SrTiO3 and PbTiO3/SrTiO3. The density of state （DOS） and electronic charge profiles show that there are strong hybridizations between atoms Ti and O and between atoms Pb and O which play very important roles in producing the ferroelectricities of superlattices BaTiO3/SrTiO3 and PbTiO3/SrTiO3. Ow- ing to the decline of internal electric field in SrTiO3 （ST） layer, the tetragonality and polarizations of superlattices decrease with increasing the fraction of SrTiO3 in the superlattices. We find that the polarization of PbTiO3/SrTiO3 is largerthan that of BaTiO3/SrTiO3 at the same ratio of components, because the polarization mismatch between PbTiO3 and SrTiO3 is larger than that between BaTiO3 and SrTiO3. The polarization and tetragonality are en- hanced with respect to those of bulk tetragonal BaTiO3 in the superlattices BaTiO3/SrTiO3, while the polarization and tetragonality are reduced with respect to those of bulk tetragonal PbTiO3 in superlattices PbTiO3/SrTiO3.     

Apparent soft mode linewidth divergence in PbTiO3

The apparent soft mode linewidth divergence observed in Raman scattering from PbTiO₃ in the vicinity of the transition temperature is explained by an enhancement of scattering processes that are allowed due to finite acoustic phonon lifetimes.     

Unusual piezoresponse behavior across the grain boundary of PbMg1/3Nb2/3O3-0.33PbTiO3 thin films

Ferroelectric PbMg_1/3Nb_2/3O₃-0.33PbTiO₃ (PMN-0.33PT) polycrystalline thin film near MPB was grown on Ir with LaNiO₃ buffer layer by pulsed laser deposition technology. Piezoresponse force microscopy (PFM) was employed to investigate the role of grain boundary on the domains formation and their local physical properties in PMN-PT thin film. Unusual piezoresponse behaviors were firstly observed across the grain boundary of PMN-PT thin film via PFM. Such abnormal phenomenon is ascribed to the structural incompatibility-induced local stress across the grain boundary, which gives a deep influence on the local imprint behavior of PMN-PT thin film.     

Molecular-mediated crystal growth of PbTiO3 nanostructure on silicon substrate

A simple approach based on an organically modified sol-gel process has been developed to fabricate PbTiO₃ (PT) nanocrystals on Si (1 0 0) substrate, where the amorphous powder modified by acetylacetone (acac) was used as precursor. After dropping the amorphous powder precursor prepared by freeze-drying process, PT nanocrystals on Si (1 0 0) substrate were obtained after heat treatment at 720 °C for 30 min in air. PT nanocrystals have been detected by XRD to be tetragonal perovskite structure. With the increase of acac/Pb molar ratio, the relative (1 0 0)/(0 0 1) diffraction peak intensity gradually increases, which probably suggested an oriented growth of PT nanocrystal along [1 0 0] on Si (1 0 0) substrates. In addition, Atomic force microscopy (AFM) results indicated that the height and the average lateral size of PT nanocrystal increased and then decreased as the acac/Pb molar ratio increased. Piezoelectric force microscopy (PFM) results demonstrated that all the samples show obvious piezoelectric activity. These results implied that the acetylacetone molecular mediated the growth of PT nanocrystals on Si (1 0 0) substrates possibly by the acac/Pb molar ratio. This simple method has been suggested to be attractive for tailoring an oriented growth of the nanostructures of perovskite oxide systems on Si substrates.     

Microstructural and compositional studies of liquid-phase deposition derived PbTiO3 thin films on LaNiO3 substrates

PbTiO₃ thin films were successfully deposited on the LaNiO₃ (LNO) substrates by the liquid-phase deposition (LPD) method and post-annealing at various temperatures. The structure, morphology and composition of the films were investigated by some analytical techniques. The as-deposited films are amorphous and composed of densely packed spherical particles. The films with the grain size of 180 nm start to decompose and crystallize into perovskite structure at 450 °C and show a perovskite single phase with tetragonal structure after annealing at 650 °C. X-ray photoelectron spectroscopy (XPS) analysis reveals that the as-deposited film contains fluorine and carbon as major impurities. Fluorine could be completely eliminated by annealing at 650 °C in air.     

Local properties of the electronic structure of cubic SrTiO3, BaTiO3 and PbTiO3 crystals, analysed using Wannier-type atomic functions

The electronic structure of the cubic perovskites SrTiO₃, BaTiO₃ and PbTiO₃ is calculated by Hartree-Fock and density functional theory methods. Wannier-type atomic orbitals (WTAOs) are obtained from symmetrized combinations of Bloch states of some occupied and vacant bands by a variational method. Population analysis, based on the WTAOs, attributes a mixed ionic-covalent type of bonding with partly covalent Ti-O bonds to the perovskites under study. The atomic charges thus calculated are then compared to those obtained by the traditional Mulliken population analysis.