首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 140 毫秒
1.
用Sol-Gel法制备了Pb(1+x)TiO3/PbZr03Ti07O3/Pb(1+x)TiO3(PT/PZT/PT)夹心结构及PZT铁电薄膜,为了获得高质量的PT/PZT/PT夹心结构铁电薄膜,使用不同过量Pb配比(x)的PbTiO3 (PT)层进行制备,以获得优化的PT子晶层.X射线 关键词: PT/PZT/PT 夹心结构 子晶 铁电薄膜  相似文献   

2.
用Sol-Gel法制备了Pb(1+x)TiO3/PbZr03Ti07O3/Pb(1+x)TiO3(PT/PZT/PT)夹心结构及PZT铁电薄膜,为了获得高质量的PT/PZT/PT夹心结构铁电薄膜,使用不同过量Pb配比(x)的PbTiO3 (PT)层进行制备,以获得优化的PT子晶层.X射线  相似文献   

3.
PT/PZT/PT铁电薄膜的铁电畴和畴壁   总被引:1,自引:0,他引:1       下载免费PDF全文
用sol-gel法制备出了具有良好铁电性、纯钙钛矿结构的PbTiO3/Pb(Zr0.3Ti0.7)O3/PbTiO3(PT/PZT/PT)新型夹心结构铁电薄膜.用扫描力显微镜(SFM)的压电响应模式获得了薄膜铁电畴的垂直于膜平面方向(OPP)、膜平面内(IPP)及OPP的相位和幅度图像,结合理论分析指出薄膜的电畴主要由c畴和偏离垂直于膜平面方向上的c畴构成,薄膜取向的复杂性导致了复杂的畴结构.对于[111]取向的薄膜,当偏离垂直于膜平面方向上的c畴在垂直膜平面方向和面内方向都相反时构成180°的畴壁,在垂直膜平面方向上相同、面内方向相反或由垂直膜平面方向上相反、面内方向相同时构成90°畴壁. 关键词: 铁电薄膜 PT/PZT/PT 电畴和畴壁 扫描力显微镜(SFM)  相似文献   

4.
Au/PZT/BIT/p-Si异质结的制备与性能研究   总被引:2,自引:2,他引:0       下载免费PDF全文
采用脉冲激光沉积(PLD)工艺,制备了以Bi4Ti3O12(BIT)为过渡阻挡层的Au/PZT/BIT/p-Si异质结.研究了BIT铁电层对Pb(Zr0.52Ti0.48)O3(PZT)薄膜晶相结构、铁电及介电性能的影响,对Au/PZT/BIT/p-Si异质结的导电机制进行了讨论.氧气氛530℃淀积的PZT为多晶铁电薄膜,与直接淀积在Si基片上相比,加入BIT铁电层后PZT铁 关键词: 铁电薄膜 异质结构 脉冲激光沉积(PLD)  相似文献   

5.
朱杰  张辉  张鹏翔  谢康  胡俊涛 《物理学报》2010,59(9):6417-6422
采用脉冲激光沉积(PLD)技术在LaSrAlTaO3(LSATO),LaAlO3(LAO)和SrTiO3(STO)的单晶倾斜衬底上成功制备了Pb(Zr0.3Ti0.7)O3(PZT)薄膜,在三种倾斜衬底上生长的PZT薄膜中都首次发现了LIV效应.对PZT/LSATO薄膜在a,c轴两种不同取向择优生长下的LIV效应做了研究,发现在薄膜c轴取向择优生长 关键词: 激光感生电压效应 铁电薄膜 薄膜生长取向 原子层热电堆  相似文献   

6.
射频磁控溅射法室温下在Pt/Ti/SiO2/Si上制备非晶Pb(Zr048Ti052)O3薄膜,非晶PZT薄膜分别经常规炉退火(CFA)处理和快速热退火(RTA)处理晶化为(100),(111)不同择优取向的多晶薄膜. 采用x射线衍射测定了薄膜相组分、择优取向度;用原子力显微镜和压电响应力显微镜观察了薄膜表面形貌,以及对应区域由自发极化形成的铁电畴像,观察了不同取向薄膜的电畴分布特征. 结果表明,RTA晶化过程钙钛矿结构PZT结晶主要以PZT/Pt界面处的PtPb化合物为成核点异质形核并类似外延的结晶生长,沿界面结晶速率远大于垂直膜面结晶速率,而CFA晶化样品成核发生在膜内杂质缺陷处,以同质成核为主. 不同的成核机理导致了不同晶面择优取向生长. 关键词: PZT薄膜 结晶 形核 力显微技术  相似文献   

7.
利用射频磁控溅射技术在LaNiO_3/SiO_2/Si基底上制备了Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3/CoFe_2O_4和Pb(Mg_(1/3)Nb_(2/3))O_3-Pb TiO_3/Co Fe_2O_4/Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3两种复合薄膜.我们采取了三种退火条件对复合薄膜进行退火处理,研究两种复合薄膜的晶体结构、电学和磁学性能.通过对两种复合薄膜的结构的分析,发现两步法退火后得到复合薄膜同时存在纯钙钛矿相和尖晶石相两种结构.铁电性能测试表明,两种复合薄膜均具有较好的铁电性能,其中三层复合薄膜的剩余极化强度Pr最大可以达到14.9μC/cm2,这要归因于多层复合薄膜内部的应力-应变效应和界面耦合效应.在电场强度为80 k V/cm的漏电流密度数量级仅10-5A/cm2,其导电机制在高电场区满足Schottky机制.介频性能测试表明:复合薄膜的介频特性较差,双层复合薄膜的介电性能较好,其介电常数εr为1078,其介电损耗tgδ较大,约为0.43.此外,对复合薄膜的磁滞回线测试表明:两种复合薄膜中均存在磁学性能,且双层结构复合薄膜的铁磁性能较大,其饱和磁化强度Ms为119 emu/cm3,剩余磁化强度Mr达到31.6 emu/cm3,矫顽场Hc为1360 Oe.以上测试结果表明,铁电有序和磁有序可以存在于钙钛矿-尖晶石结构当中,通过多层复合和合适退火方式可以增强其铁电和介电性能.  相似文献   

8.
利用射频磁控溅射技术在LaNiO3/SiO2/Si基底上制备了Pb(Mg1/3Nb2/3)O3-PbTiO3/CoFe2O4和Pb(Mg1/3Nb2/3)O3-PbTiO3/CoFe2O4/Pb(Mg1/3Nb2/3)O3-PbTiO3两种复合薄膜.我们采取了三种退火条件对复合薄膜进行退火处理,研究两种复合薄膜的晶体结构、电学和磁学性能.通过对两种复合薄膜的结构的分析,发现两步法退火后得到复合薄膜同时存在纯钙钛矿相和尖晶石相两种结构.铁电性能测试表明:两种复合薄膜均具有较好的铁电性能,其中三层复合薄膜的剩余极化强度Pr最大可以达到14.9 μC/cm2,这要归因于多层复合薄膜内部的应力-应变效应和界面耦合效应.在电场强度为80kV/cm的漏电流密度数量级仅10-5A/cm2,其导电机制在高电场区满足Schottky机制.介频性能测试表明:复合薄膜的介频特性较差,双层复合薄膜的介电性能较好,其介电常数εr为1078,其介电损耗tgδ较大,约为0.43.此外,对复合薄膜的磁滞回线测试表明:两种复合薄膜中均存在磁学性能,且双层结构复合薄膜的铁磁性能较大,其饱和磁化强度Ms为119 emu/cm3,剩余磁化强度Mr达到31.6 emu/cm3,矫顽场Hc为1360 Oe. 以上测试结果表明,铁电有序和磁有序可以存在于钙钛矿-尖晶石结构当中,通过多层复合和合适退火方式可以增强其铁电和介电性能.  相似文献   

9.
" 在Pt/Ti/SiO2/Si基片上用溶胶-凝胶法与快速退火工艺制备了300 nm厚的锆钛酸铅Pb(Zr0:95Ti0:05)O3 (PZT95/5)反铁电薄膜.结果显示600~700 ℃晶化处理的钙钛矿PZT95/5薄膜具有高度(111)取向生长特性.薄膜的电性能测量采用金属-铁电-金属电容器结构.在20 V电压作用下,600~700 ℃晶化处理的PZT95/5薄膜显示出饱和电滞回线.在1 kHz下,600、650和700 ℃晶化的薄膜介电常数与损耗分别为519与0.028、677与0.029、987  相似文献   

10.
选用不同浓度的Pb(Zr0.52Ti0.48)O3溶胶,用Sol-gel法在Pt/Ti/SiO2/Si基片上沉积一层厚度不同的Pb(Zr0.52Ti0.48)O3(PZT52)过渡层,经400℃烘烤、550℃退火等程序后,再用Sol-gel法在PZT52过渡层上沉积Pb(Zr0.52Ti0.48)O3薄膜.XRD分析表明,有PZT52过渡层的Pb(Zr0.52Ti0.48)O3薄膜具有(111)择优取向的钙钛矿结构,且随着过渡层厚度的增加,Pb(Zr0.52Ti0.48)O3薄膜的(111)择优取向程度越高.SEM分析表明,当PZT52过渡层的厚度达到14nm以上,Pb(Zr0.52Ti0.48)O3薄膜结晶程度得到明显改善,平均晶粒尺寸大大增加.介电、铁电性能测试表明,与没有过渡层的Pb(Zr0.52Ti0.48)O3薄膜相比,有PZT52过渡层的Pb(Zr0.52Ti0.48)O3薄膜具有较大的介电常数和剩余极化强度,而介电损耗则较小.  相似文献   

11.
Artificial PbTiO3/SrTiO3 superlattices were constructed using off-axis rf magnetron sputtering. X-ray diffraction and piezoelectric atomic force microscopy were used to study the evolution of the ferroelectric polarization as the ratio of PbTiO3 to SrTiO3 was changed. For PbTiO3 layer thicknesses larger than the 3-unit cell SrTiO3 thickness used in the structure, the polarization is found to be reduced as the thickness is decreased. This observation confirms the primary role of the depolarization field in the polarization reduction in thin films. For the samples with ratios of PbTiO3 to SrTiO3 of less than one, a surprising recovery of ferroelectricity that cannot be explained by electrostatic considerations was observed.  相似文献   

12.
A phenomenological thermodynamic model is presented to investigate the effects of the orientation and the relative thickness of SrTiO3 layer on the electrocaloric effect in PbTiO3/SrTiO3 multilayers. Theoretical calculations show that complete polarization suppression and a large electrocaloric effect take place at the critical relative thickness of SrTiO3 layer of 46%, 33%, and 30% for the (001), (110), and (111) oriented PbTiO3/SrTiO3 multilayers respectively, not occuring at the critical relative thickness of 63%, 50%, and 46% reported by Wu et al. [H.P. Wu, A.P. Liu, L.Z. Wu, S.Y. Du, Appl. Phys. Lett. 93 (2008) 242909]. Moreover, (111) oriented multilayers have the largest electrocaloric effect which is different from that of BaTiO3/SrTiO3 multilayers where (110) oriented multilayers have the largest electrocaloric effect. Consequently, the electrocaloric effect of PbTiO3/SrTiO3 multilayers can be adjusted by the orientation and the relative thickness of SrTiO3 layer.  相似文献   

13.
We report from first-principles-based atomistic simulations that ferroelectricity can be sustained in PbTiO(3) nanoparticles of only a few lattice constants in size as a result of a toroidal ordering. We find that size-induced topological transformations lead to the stabilization of a ferroelectric bubble by the alignment of vortex cores along a closed path. These transformations, which are driven by the aspect ratio of the nanostructure, change the topology of the polarization field, producing a rich variety of polar configurations. For sufficiently flat nanostructures, a multibubble state bridges the gap between 0D nanodots and 2D ultrathin films. The thermal properties of the ferroelectric bubbles indicate that this state is suitable for the development of nanometric devices.  相似文献   

14.
The temperature dependence of the heat capacity of the 0.7PbNi1/3Nb2/3O3-0.3PbTiO3 compound has been studied in the temperature range 120?C800 K. The temperature dependence of the heat capacity C p has two diffuse anomalies in the temperature ranges 250?C450 K and 450?C650 K and a ?? anomaly at temperatures T ?? 225 K. The results are discussed with inclusion of the dielectric and structural data.  相似文献   

15.
The nanoceramics of lanthanum (La3+)-modified lead titanate (PbTiO3) with a general formula Pb1?yLayTi(1?y/4)O3 (y = 0.00, 0.06, 0.08, 0.10, 0.12 Lead Lanthanum Titanate (PLT)) were synthesized by a mechanothermal method. Thermal analysis of the PLT samples exhibits their nature of the reaction and thermal stability. The incorporation of La at the Pb site of lead titanate (PT) not only changes the ratios of its unit cell parameters but also reduces the grain and particle size to nanoscale. The dielectric constant of PLT is dependent on La concentration. The La concentration-dependent phase transition temperature of PbTiO3 is one of the main characteristics of the material.  相似文献   

16.
Lattice dynamical formalism, using rigid ion model, was applied to the crystal of PbTiO3 in the tetragonal phase. The model includes long range Coulomb forces and short range axially symectric forces. The radial part of the short range force constants was assumed to be of Born-Meyer type. The parameters of the model were determined through a least squares analysis of zone center and a few zone boundary phonons. Dispersion curves for [100] and [001] directions are presented.  相似文献   

17.
The effect of a direct-current electric field (0 < E < 3 kV/cm) on the smearing of the phase transition and the Curie-Weiss exponent (γ) for two PbIn1/2Nb1/2O3-28PbTiO3 and PbIn1/2Nb1/2O3-37PbTiO3 crystals lying at different distances from the morphotropic phase boundary has been investigated. The universal Curie-Weiss law has been used to approximate the temperature dependences of the dielectric permittivity. It has been shown that the more remote is the crystal from the morphotropic phase boundary, the larger is the exponent γ and, consequently, the more smeared is the phase transition (in the zero field, γ = 1.67 and 1.49 for PbIn1/2Nb1/2O3-28PbTiO3 and PbIn1/2Nb1/2O3-37PbTiO3, respectively). It has been found that a weak electric field (no greater than 2–3 kV/cm) in the case of the more smeared phase transition almost does not affect the Curie-Weiss exponent, whereas for the PbIn1/2Nb1/2O3-37PbTiO3 crystal, this exponent decreases with increasing electric field strength and approaches γ = 1, which is characteristic of the conventional ferroelectric.  相似文献   

18.
19.
The phase transitions Pm3mP4mm and domain-structure formation in 5–500 μm isometric PbTiO3 crystals were investigated. The phase transition is characterized by a high rate and by the formation of a single flat interphase boundary {023}. A size effect was observed: In crystals smaller than a critical size (about 20 μm), formation of 90° domains stops and, in agreement with a phenomenological theory, the temperature hysteresis of the phase transition doubles. Fiz. Tverd. Tela (St. Petersburg) 40, 1546–1547 (August 1998)  相似文献   

20.
The defect structure of hard copper-modified polycrystalline PbTiO3 ferroelectrics is investigated by means of electron paramagnetic resonance and hyperfine sublevel correlation spectroscopy, as well as density functional theory calculations. Special emphasis is put on the 207Pb-hyperfine couplings, which are resolved up to the third coordination sphere. The results prove that copper is incorporated at the octahedrally coordinated Ti site, acting as an acceptor. Because of charge compensation the formation of Cu impurity-oxygen vacancy pairs is energetically very favorable. The corresponding (CuTi'-VO)x defect dipole is found to be orientated along the [001] axis.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号