利用有机层间互相掺杂提高有机电致发光器件的效率

提高器件的发光效率是实现有机电致发光器件实用化的一个关键因素。通过对器件结构和制作工艺的优化设计，将有机电致发光器件的各个功能层进行互相掺杂，在层间形成互掺过渡层达到平衡载流子的注入，使得注入的电子和空穴有效地限制在互掺的有源区内，增加了载流子相遇复合的几率，进而提高器件的发光效率。器件的最大电流效率在外加电压10．5V时达到7．9cd／A，最大发光亮度在35V时达到49000cd／m^2。和一般掺杂器件相比效率提高2倍以上。同时有机层间的互相掺杂也在一定程度上消除了层问的界面，减少了有机层问的缺陷，与没有过渡层的器件相比，器件老化性能有了明显改善。     

利用电子传输层掺杂改善有机发光器件的效率

利用BCP掺杂到电子传输层Alq中,在掺杂层中阻挡了空穴的迁移,调整了空穴和电子的平衡,将激子有效地限制在发光层中发光,从而增加有机电致发光器件的效率.器件的最大电流效率在外加电压9 V时达到4.1 cd/A(掺杂浓度8%时),与一般未掺杂器件相比效率提高了2倍多.同时也减少空穴到达阴极,而减少发光淬灭.     

绝缘层LiF/Al电极对提高P-PPV发光器件发光性能的研究

为了提高聚合物电致发光器件中Ba（Ca）／Al阴极的稳定性,在该阴极与聚合物发光材料poly（2-（4-ethylexyl）phenyl-1,4-phenylene vinylene）（P-PPV）层之间插入一层7nm的LiF绝缘层,发光器件的发光性能在多项参数（发光器件的电压．电流特性、发光强度及外量子效率,以及电流效率等发光性能指标）上能够与工作性能优良但稳定性较差的Ba（Ca）／Al电极结构PLEDs器件的发光特性具有可比性。这对于研制高效率、高稳定的聚合物电致发光器件并最终将其用于商业目的,具有重大现实意义。     

金属氟化物对聚合物发光二极管发光性能的提高

在以聚合物发光材料MEH-PPV为发光层的聚合物发光二极管(PLEDs)的金属阴极与聚合物发光层之间插入一层绝缘的金属氟化物,发光器件的发光性能有所提高,而且绝缘层的厚度会影响器件性能提高的最终效果。特别是具有LiF／Al的双层电极的发光器件,其发光特性与工作性能优良,但稳定性较差的Ba(Ca)／Al电极结构器件的发光特性具有可比性。初步分析表明绝缘层的插入造成了发光聚合物层与金属电极界面的能带发生弯曲,降低了发光器件中少数载流子电子的注入势垒,提高了发光器件中少数载流子电子的注入效率。从而最终导致了发光器件的开启电压、发光强度、外量子效率及电流效率等发光性能指标的显著提高。     

利用8-羟基喹啉锂作电子注入层以提高有机发光器件的发光效率

8-羟基喹啉锂用作有机电致发光器件的电子注入层能够提高阴极功函数,进而提高器件的发光效率。10的Liq薄膜足以降低有机电致发光器件中的开启电压并能有效提高器件效率,该现象可与LiF/Al作阴极的器件性能相比拟。利用不同阴极材料制作器件,讨论了8-羟基喹啉锂的电子注入机制,发现把Liq薄膜引入到Alq3和不同阴极之间后,器件的电流密度与所用阴极材料的种类无关。为了讨论电子在分界面上注入势垒的变化情况,对器件进行饱和光伏测试。测试发现Alq3/Liq/Al的分界面上真空能级的移动降低了电子注入势垒。推测此现象是由于在界面上形成了强偶极子,这也可能是有机电致发光器件中电子注入效率提高的机理之一。     

利用氧等离子体处理阳极银实现高效率顶发射有机电致发光

主要报道在器件结构为玻璃衬底/Ag(阳极)/NPB(空穴传输层)/Alq3(电子传输及发光层)/Sm(半透明阴极)/Alq3的顶发射有机电致发光器件中,利用氧等离子体对阳极银的表面进行处理来降低阳极和空穴传输层(Ag/NPB)界面处的空穴注入势垒,提高顶发射有机电致发光器件的性能。主要研究了氧等离子体处理时间对阳极银和顶发射有机电致发光器件光电特性的影响。紫外光电子能谱表明,氧等离子体处理能有效降低Ag/NPB界面处的空穴注入势垒。通过优化处理时间获得最佳器件性能,优化后的器件最大效率可达6.14cd/A。     

硅片上顶发射的有机电致发光器件

为了更好地实现有机发光器件在硅片上的有源矩阵显示,有必要探讨在硅片上直接制作透明阴极的顶发射有机发光器件。在顶发射发光器件中,为了到达高的发光效率,底部阳极一般采用高反射率的金属。在通常所用的各种金属当中,金属银对可见光具有很高的反射率,然而由于其具有相当低的功函数,导致与有机材料间能级的不匹配,从而引起有机发光器件中阳极空穴注入的不理想而影响器件的性能。我们在硅片上制备顶发射的有机发光器件,用薄层QAD(quinacridone)作为发光层,表面修饰的银作为阳极,制备的有机发光器件的亮度在外加电压10V时达到13700cd／m^2,器件的最大电流效率在7V时达到4．3cd／A,是没有薄层QAD器件的2倍多,是由在器件中存在Alq3与QAD之间Foester能量转移机制引起的。     

Cs_2CO_3共蒸阴极对有机电致发光器件性能的影响(英文)

研究了碳酸铯(Cs2CO3)掺杂8-羟基喹啉铝(Alq3)作为电子注入层对有机电致发光器件性能的影响。结果表明,与常用的Cs2CO3超薄层作电子注入层相比,Cs2CO3∶Alq3共蒸阴极对器件效率和亮度有很大提高,器件电流效率从3.1 cd/A(Cs2CO31 nm/Al)提高到6.5 cd/A(Cs2CO33%∶Alq3/Al)。器件性能的提高归因于Cs2CO3∶Alq3共蒸阴极比单层Cs2CO3阴极具有更好的电子注入能力和电子传输性能。薄膜形貌表明,共蒸阴极能有效降低Alq3表面粗糙度,有助于提高器件发光性能及寿命。     

阴极修饰层CuPc、ZnPc、C60对OLED光电性能的影响

采用真空蒸镀法分别制备了以CuPc、ZnPc、C₆₀为阴极修饰层的OLED,对比研究了它们对OLED光电性能的影响。从能级结构、表面形貌、折射率及纳米界面等方面对载流子注入和输运进行了探讨。结果表明:修饰层使器件性能显著提高,它不仅降低OLED开启电压（最低至4.2 V）、提高OLED电流密度及发光效率（最高至13.49 lm/W）,同时增强了器件的发光稳定性（180 s后光强保持在90%以上）,其中以CuPc为阴极修饰层的器件表现的性能最好。发光光谱方面,以CuPc和ZnPc作为修饰层的器件对550~650 nm的红光部分略有吸收,而C₆₀作为修饰层的器件光谱则无太大变化,这是由修饰层材料的吸收系数随不同波长而变化所致。实验结果说明,若想较大程度地提高器件电性能,酞菁材料是不错的选择;若对光谱有要求,可用C₆₀做阴极修饰层。     

聚（2，5－二丁氧基对苯乙炔）电致发光性能的研究

本文对以聚（２，５－二丁氧基对苯乙炔）为发光层的聚合物电致发光二极管的电致发光性能和影响其性能的因素进行了研究．其发光峰值波长为５９０ｕｍ，起亮电压为１２Ｖ，最大亮度可达１１２ｃｄ／ｍ２．热处理温度和时间影响其发光强度和峰值波长，一般以２００℃，真空处理３．５ｈ为宜．还原气氛（Ｎ２＋Ｈ２）下的热处理有利于电致发光性能的提高．器件在空气中具有一定的使用寿命．其量子效率可达０．１６％光子／电子．并研究了器件制备工艺对性能的影响，初步探讨了聚合物电致发光机理．     

采用Al/TaN叠层电极提高Si基Ge PIN光电探测器的性能

金属与Ge材料接触由于存在强烈的费米钉扎效应, 导致金属电极与n型Ge接触引入较大的接触电阻, 限制了Si基Ge探测器响应带宽. 本文报道了在SOI衬底上外延Ge单晶薄膜并制备了不同台面尺度的Ge PIN光电探测器. 对比了电极分别为金属Al和Al/TaN叠层的具有相同器件结构的SOI基Ge PIN光电探测器的暗电流、响应度以及响应带宽等参数. 发现在Al与Ge之间增加一薄层TaN可有效减小n型Ge的接触电阻, 将台面直径为24 μ的探测器在1.55 μ的波 长和-1 V偏压下的3 dB响应带宽提高了4倍. 同时, 器件暗电流减小一个数量级, 而响应度提高了2倍. 结果表明, 采用TaN薄层制作金属与Ge接触电极, 可有效钝化金属与Ge界面, 减轻费米钉扎效应, 降低金属与n-Ge接触的势垒高度, 因而减小接触电阻和界面复合电流, 提高探测器的光电性能.     

Enhanced performance of the OLED with plasma treated ITO and plasma polymerized thiophene buffer layer

In this work, indium-tin-oxide (ITO) electrode in organic light emitting device (OLED) was modified by using an O₂ plasma treatment and plasma polymerized thiophene buffer layers were inserted between ITO (anode) and organic layer in order to improve the hole injection efficiency. Furthermore, electron injection to cathode (Al) in the test OLED seemed to be improved due to introduction of quantum well in the cathode. The plasma-polymerized thiophene buffer layer on the O₂ plasma-treated transparent ITO electrode seemed to result in formation of a stable interface and consequently, reduction the hole mobility, which in turn caused enhanced recombination of hole and electron in the emitting layer. Compared with the test device without buffer layer, the turn-on voltage of the test device with the buffer layer was lowered by 1.0 V.     

Hydrodynamic behavior of bubbles at gas-evolving electrode in ultrasonic field during water electrolysis

In electrochemical processes, gas bubbles on the electrode can cause an increase in both overpotential and ohmic voltage drop which leads to higher energy consumption. Applying power ultrasound during water electrolysis can help to reduce the overpotential, enhance mass transfer, and save energy. In this study, we investigated the effect of ultrasound (20 kHz) on the hydrogen evolution reaction (HER) on a stainless steel plate with varying concentrations of NaOH solutions at 298 K, using linear sweep voltammetry (LSV). We especially focused on understanding the bubble behavior on the stainless steel plate during HER using high-speed imaging in ultrasonic field. When ultrasound was applied to solutions with NaOH concentrations of 0.1, 0.5, 1 M, the current density increased by about 9.0, 5.9, 2.8 %, respectively. As the ultrasound irradiation began, the bubbles tended to hover around on the electrode surface, coalescing with other bubbles, rather than rising. When the size of the coalesced bubbles became too large to stay on the surface of the electrode, they were expelled from the ultrasonic field. The repeated collapse and coalescence of these bubbles was observed while they were rising. The velocity increased about 2 times when ultrasound irradiation began, and increased by more than 6 times in the ultrasonic field. More nucleation of bubbles was observed on the electrode in the ultrasonic field. Using ultrasound reduced the critical diameter of bubbles which detached from the electrode, from 58.0 to 15.9 μm, and the residence time of the bubbles, from 533 to 118 ms. Further, when the ultrasound was applied, the mean diameter of bubbles decreased from 71.8 to 17 μm. Hence, bubble coverage on the electrode surface decreased from 8.3 to 1 % despite an increase in the total number of bubbles. As a result, ultrasound was found to be effective for hydrogen production during water electrolysis, increasing current by the faster removal of gas from the stainless steel plate.     

Reduction of the contact resistance in copper phthalocyanine thin film transistor with UV/ozone treated Au electrodes

Bottom-contact (BC) copper phthalocyanine (CuPc) thin film transistor with UV/ozone treated Au as a source/drain electrode was fabricated and the contact resistance was estimated from the transmission line method (TLM). Comparing the properties of OTFT with untreated Au electrode, the performance of the BC CuPc-TFT with the UV/ozone treated Au electrodes was significantly improved: saturation mobility increased from 4.69 × 10⁻³ to 2.37 × 10⁻² cm²/V s, threshold voltage reduced from −29.1 to −6.4 V, and threshold swing varied from 5.08 to 2.25 V/decade. The contact resistance of the device with UV/ozone treated Au electrodes was nearly 20 times smaller than that of the device with untreated Au electrodes at the gate voltage of −20 V. This result indicated that using the UV/ozone treated Au electrode is an effective method to reduce the contact resistance. The present BC configuration with UV/ozone treated Au electrodes could be a significant step towards the commercialization of OTFT technology.     

A comparative study of electrode effects on the electrical and luminescent characteristics of Alq3/TPD OLED: Improvements due to conductive polymer (PEDOT) anode

The performance of organic light emitting device (OLED) structures, based on identically fabricated Alq₃/TPD active regions, with various anode and cathode electrode structures are compared, and performance differences related to the different anode structure. The best performance was achieved with a conductive polymer, 3,4-polyethylenedioxythiopene-polystyrenesultonate (PEDOT), used as an anode layer, yielding a brightness of 1720 cd/m² at 25 V, a turn-on voltage of 3 V, and electroluminescence (EL) efficiency and external quantum efficiency of 8.2 cd/A and 2%, respectively, at a brightness of 100 cd/m² and 5 V. Compared to a baseline device (TPD/Alq₃/Al), PEDOT anodes substantially reduce the turn-on voltage and made current injection almost linear after turn-on, whiles devices incorporating a LiF and CuPc layers significantly improved device efficiency while slightly improving turn-on voltage and maintaining superlinear I-V injection. This is attributed to the reduced barrier at the organic-organic interface in PEDOT, the ‘ladder’ effect of stepping the band offset over several interfaces, and the favorable PEDOT film morphology. The benefit of the PEDOT anode is clearly seen in the improvement in device brightness and the high external quantum efficiency obtained.     

利用LiF/Al作为电极的有机电致发光器件

本文报道了利用LiF/Al作为负电极的有机电致发光器件,器件结构为ITO/TPD/Alq3/LiF/Al,LiF层的加入增强了电子注入,当其厚度为0.4nm时,器件的性能最好,与单层Al和Mg/Al电极的同类器件相比,此时器件的开启电压由Al电极时的4.3V和Mg/Al电极时的3.0V降低到了2.0V,器件的最大亮度分别由4000cd/m²、14000cd/m²提高到19600cd/m²,器件的发光效率也分别增加了5倍和2倍,达到2.66lm/W.     

有机薄膜电致发光失效过程的多重分形谱研究

用多重分形谱描述了荧光显微镜原位观察到的有机薄膜电致发光的失效过程.实验观察表明：有机层/金属电极界面上气泡的产生是电致发光的失效的原因.多重分形谱的分析显示：随薄膜工作时间愈长或工作电压愈高,分形谱的宽度愈窄,表明气泡的数量逐渐增加并愈加均匀地分布在界面上,这一结果和实验观察完全一致,因此多重分形谱可以很好地描述这种失效过程.     

Plasma treatment of the Mg:Ag/tris-(8-hydroxyquinoline) aluminum interface in OLEDs: effects on adhesion and performance

The adhesion of a Mg:Ag cathode to the tris-(8-hydroxyquinoline) aluminum (Alq₃) in organic light emitting devices (OLEDs) can be greatly enhanced by a remote plasma treatment of the Alq₃ layer using either air or N₂ prior to metal deposition. The altered surface properties which lead to increased sticking coefficients of Mg and Ag, as well as enhanced adhesion, are attributed to the introduction of new functional groups into the organic layer, as observed by X-ray photoelectron spectroscopy (XPS). The storage life of the plasma treated devices in air without any capping treatment, as judged by a visible deterioration of the cathode, was increased by approximately five to six times compared to untreated OLEDs. Current–voltage characteristics and EL efficiency, however, were shown to deteriorate for devices incorporating either an air or an N₂ plasma treated Alq₃ layer. For OLEDs subjected to short treatment times with an N₂ plasma, only a very slight increase in the turn-on voltage, of about 0.2 V, was observed. An investigation of black spot formation revealed that an air plasma treatment resulted in a five-fold decrease in the time required for 50% of the device to become non-emissive. N₂ treated devices on the other hand, developed black spots at a comparable rate to the non-treated devices. Thus, a short N₂ plasma treatment of the Alq₃ layer prior to metal deposition improves the adhesion at the interface, thereby reducing the oxidation and degradation of the device through exposure to ambient conditions, particularly in storage.     

背栅效应对SOI横向高压器件击穿特性的影响

提出一种SOI基背栅体内场降低BG REBULF(back-gate reduced BULk field)耐压技术. 其机理是背栅电压诱生界面电荷，调制有源区电场分布，降低体内漏端电场，提高体内源端电场，从而突破习用结构的纵向耐压限制，提高器件的击穿电压. 借助二维数值仿真，分析背栅效应对厚膜高压SOI LDMOS (>600V) 击穿特性的影响，在背栅电压为330V时，实现器件击穿电压1020V，较习用结构提高47.83%. 该技术的提出，为600V以上级SOI基高压功率器件和高压集成电路的实现提供了一种新的设计思路. 关键词： SOI 背栅 体内场降低 LDMOS     

倒置器件结构及局域等离子体效应对CdSe量子点LED发光性能的改进

研究了倒置器件结构以及CdSe量子点发光材料与金属纳米粒子之间的相互作用对量子点的电致发光性能的影响。利用TiO₂作为电子传输/注入层,成功地制备了倒置结构的量子点电致发光器件。通过对单载流子器件电压-电流特性的分析,证明了ITO作为阴极到TiO₂的电子注入特性与Al作为阴极时的效果几乎相同。观察到金属纳米粒子产生的局域等离子体效应提高了器件的效率,使得效率随电流增大而降低的速度明显减小。在电流密度为200 mA/cm²时,电致发光器件的效率大约提高了42%。