纳米微粒BaFe12O19掺杂对单畴超导块材GdBa2Cu3O7-δ性能的影响

磁通钉扎性能对GdBa₂Cu₃O_7-δ超导块材的实际应用具有重要的影响, 而引入合适的第二相粒子可以改善GdBa₂Cu₃O_7-δ 超导块材的磁通钉扎性能.本文采用顶部籽晶熔融织构法成功地制备出纳米微粒BaFe₁₂O₁₉(<100 nm)掺杂的超导块材, 样品的最终组分为Gd123+ 0.4 Gd211+ x BaFe₁₂O₁₉ (x=0, 0.2 mol%, 0.4 mol%, 0.8 mol%)+ 10 wt%Ag₂O+ 0.5 wt%Pt. 通过研究不同掺杂量的BaFe₁₂O₁₉微粒对GdBa₂Cu₃O_7-δ 超导块材微观结构和超导性能的影响, 结果表明当掺杂量为0.2 mol%时, 样品的临界电流密度几乎在整个外加磁场下都有明显的提高.在零场下, 临界电流密度达到5.5× 10⁴ A/cm². 纳米微粒BaFe₁₂O₁₉不仅可以保持掺杂前的化学组成, 作为有效的钉扎中心存在于超导块材中, 并且能够改善Gd₂BaCuO₅粒子的分布和细化Gd₂BaCuO₅粒子, 使Gd₂BaCuO₅粒子的平均粒径由未掺杂时的1.4 μ m减小到掺杂后的0.79 μ m, 进而提高了超导块材的临界电流密度和俘获磁场, 明显提高了GdBa₂Cu₃O_7-δ 超导块材的超导性能.临界温度T_C也有所提升, 并能够维持在92.5 K左右. 该结果为进一步研究纳米磁通钉扎中心的引入并改善GdBa₂Cu₃O_7-δ 超导块材的性能有着重要的意义.     

Nd1.85Ce0.15CuO4－δ单晶c-轴方向电阻的低场行为

采用自助熔剂缓冷法成功地生长出了Nd_1.85Ce_{0. 15}CuO_4-δ单晶，其零场下零电阻温度约为21K. 在0—0.5T范围内分别测量了磁场平行和垂直样品表面的电阻转变曲线以及0.5T不同角度下的电阻转变曲线. 结果显示磁场平行和垂直样品表面时的转变温度T_p随磁场的变化均服从H=H₀(1-T_p(h)/T_p(0))²关系. 0.5T 关键词： 1.85Ce_0.15CuO_4-δ单晶')" href="#">Nd_1.85Ce_0.15CuO_4-δ单晶 输运性质     

2H-Nb0.9Ta0.1Se2中磁通涡旋输运的标度行为

测量了2H-Nb_0.9Ta_0.1Se₂单晶样品在不同电流下电压随磁场变化的曲线V(H),并从V(H)曲线得到V(I)数据.使用标度关系V=α(I-I_c)^β进行了拟合,得到了临界电流随磁场I_c(H)和微分电阻随磁场R_d的变化关系.在微分电阻随磁场变化的曲线中,电流较大时,靠近上临界磁场H_c2附近出现一个强峰,而在低电流下,该峰消失.同 关键词： 磁通涡旋 标度定律 临界电流峰效应     

磁悬浮系统中多芯复合Nb3Sn超导线磁通跳跃的可调性研究

超导磁悬浮列车在加速启动的过程中,载有恒定大电流的超导线圈处在变化的磁场中,这会导致超导线圈发生磁通跳跃,从而降低线圈的载流能力.并且磁通跳跃会产生大量热量而使超导线圈温度急剧升高,严重时会导致超导线圈失超,所以对磁通跳跃的研究具有非常重要的科学意义.Nb₃Sn超导线是由多根微米级的超导芯丝、铜和环氧树脂形成的复合结构.本文通过约束每根芯丝的静电流为零的二维模型来分析三维绞扭效应,研究了超导线在交变磁场和恒定电流下的磁热不稳定性行为.通过分析交变磁场的幅值和频率对Nb3Sn超导线磁通跳跃的影响,发现当磁场幅值不变时,初次发生磁通跳跃的磁场阈值B_th随频率非单调变化.而当频率一定时,初次发生磁通跳跃的磁场阈值B_th随交变磁场幅值单调变化.此外,随着幅值的减小,发生磁通跳跃的频率区间先变大后变小,直到某个临界频率后超导线不再发生磁通跳跃.本文的研究结果能够为调控超导线的磁热不稳定性行为提供理论依据.     

H2（V=3）+H2（He）碰撞中的转动能量转移

激发态Na₂与H₂碰撞,使H₂（V=3,J=3）得到布居,在H₂和He总气压为800 Pa及温度为700 K的条件下,利用相干反斯托克斯拉曼散射（CARS）光谱技术研究了H₂（3,3）与H₂（He）间转动能量转移过程.改变CARS激光束与激发Na₂的激光之间的延迟时间,测量He不同摩尔配比时H₂（3,J）态CARS谱强度的时间演化,得到H₂（3,3）的总弛豫速率系数分别为k_3,3^H₂=（21士5）×10^-3cm³·s^-1和k_3,3^H_e=（5.6士1.6）×10^-13cm³·s^-1.测量H₂（3,J）各转动态的相对CARS谱强度,由速率方程分析,得到H₂（3,3）+H₂→H₂（3,J）+H₂中,对于J=2,4,转移速率系数分别为（11±4）×10^-13cm³·s^-1和（8.2±3.1）×10^-13cm³·s_<sup>-1.在H₂（3,3）+He→H₂（3,J）+He中,对于J=2,4,转移速率系数分别为（3.1±1.2）×10^-13cm³·s^-1和（2.1士0.7）×10¹³cm³·s^-1.对于H₂（3,3）,单量子弛豫|△J|=1约占该态总弛豫率的90%.     

钙钛矿型晶体A(B1/31B2/32)O3中的有序-无序相变

本文利用原子集团变分方法,讨论了A⁺²(B_1/3⁺²B_2/3⁺⁵)O₃系统中有序-无序相变,指出在此系统中相互作用能参数对形成(B_2/3⁺²B_1/3⁺⁵)_1/2:B_1/2⁺⁵=1:1的混合型有序畴和B_{1/3关键词：}     

H1+,H2+,H3+和He,Ne,Ar碰撞过程中的巴耳末系Hα,Hβ,Hγ发射

实验利用TN-1710光学多道分析系统(OMA),对H₁⁺,H₂⁺,H₃⁺和He,Ne,Ar碰撞过程中产生的巴耳末系H_α,H_β,H_γ发射进行了测量,入射离子H₁⁺,H₂⁺,H₃⁺的 关键词：     

理想第二类超导薄膜的纵场临界电流

本文分析了一个在纵向磁场H_e中,载流的理想第二类超导薄膜(ξ(T)《d≤λ(T))的混合态结构。指出,只有当H_e>(H_c1)(d)时,超导膜的混合态才具有无阻负载电流的能力。本文得到的纵场临界电流曲线具有复杂的结构,并且一般均呈现峰值效应。Heaton及Rose-Innes测得的Nb₅₅Ta₄₅合金的I_c-H_e曲线和d>5λ时的理论曲线相比较,在主要特征上是相同的。 关键词：     

Hg0.9Tl0.2Ba2Ca2Cu3O8+δ在磁场下的热导

实验研究了高温超导体Hg09Tl02Ba2Ca2Cu3O8+δ的低温热导率与温度和磁场的关系,测量温度为7—20K,外加磁场为0—6T.结果表明,在不同外场下,超导体的热导率在实验温区内随温度的增加均单调增加;在固定的温度下外加磁场使超导体的热导率减小,并随外磁场的增加达到一个稳定值;热导的相对变化率κ(H)/κ(0)与磁场的关系以及热导率达到稳定值的磁场与测量温度有关.分析讨论了超导体中正常态电子在磁场下受磁通涡旋散射产生附加的热阻 关键词：     

{Cu3}单分子磁体在磁场中的热纠缠

本文研究单分子磁体Na₉[Cu₃Na₃(H₂O)₉ (α-AsW₉O₃₃)₂]·26H₂O中三角自旋 环在磁场作用下的热纠缠性质, 利用数值计算求出任意两个Cu²⁺离子量子比特之间的配对纠缠度, 分别记为C₁₂, C₂₃和C₁₃. 研究结果表明, 磁场的方向和大小以及温度对配对纠缠度具有重要影响, 而且参数的变化对C₁₂, C₂₃和C₁₃的影响也是各不相同. 给出外加三个不同方向的磁场时, 配对纠缠度C₁₂, C₂₃和C₁₃各自对应的临界温度T_c随磁场强度的变化图, 由此可以得到单分子磁体三角自旋环中存在纠缠态的参数范围. 通过选择适当的磁场方向和大小以及温度等实验参数, 可以有效地调节和提高单分子磁体中的配对纠缠度. 关键词： 配对纠缠 单分子磁体 三角自旋环     

YBa2Cu3O7-δ外延薄膜的有效钉扎势

在0—7T磁场范围内，测量了不同测量电流密度下YBa₂Cu₃O_7-δ外延薄膜的电阻温度关系.实验结果表明，临界温度以下，混合态的耗散电阻率能很好地用热激活磁通蠕动描述.有效钉扎势的电流密度关系遵守Zeldov等人提出的对数关系，有效钉扎势的温度和磁场关系遵守U∝(1-T/T_c)H^-α关系，其中α=0.63，与热激活磁通点阵位错运动模型相一致，表明样品具有2D涡旋性质. 关键词：     

高Tc氧化物YBa2Cu3Oy超导体中的磁通蠕动

利用观察磁化随时间变化的方法研究了高T_c氧化物YBa₂Cu₃O_y超导体临界态的磁通蠕动。实验结果表明,零场冷却的样品,加一个所选定场值的磁场,产生的磁化随对数时间线性衰减,同时伴随有磁通跳跃的发生。磁化衰减速率dM/dlnt随外场H的变化在H=3H_P附近有一峰值,并认为与弱连结超导电性的存在有关。在77K以上温度,dM/dlnt随温度的升高而单调减小。讨论了钉扎磁通的热激活能U_{0关键词：}     

YBa2Cu3Oy中氧缺位的磁通钉扎效应

制备了一组不同氧含量(T_cmid>90K)的YBa₂Cu₃O_y单相多晶样品。对其结构、超导电性和磁通钉扎行为的观测结果表明:氧缺位导致临界电流密度J_c和钉扎力密度F_p同时增加,存在一最佳的氧缺位浓度,可使J_c和F_p有最大程度提高。与氧含量y=6.96和6.83时的情况不同,对y=6.94和6.86的样品,其J_c 关键词：     

Coherence transition in granular YBa2Cu3O7-δ, YBa2Cu2.95Zn0.05O7-δ, and YBa1.75Sr0.25Cu3O7-δ superconductors

We have studied experimentally the electrical magneto-conductivity near the superconducting transition of YBa₂Cu₃O_7-δ, YBa₂ (Cu_2.95Zn_0.05)O_7-δ and Y(Ba_1.75Sr_0.25)Cu₃O_7-δ polycrystalline samples. The measurements were performed in magnetic fields ranging from 0 to 400 Oe applied parallel to the current orientation. The results show that the resistive transition of these systems proceeds in two stages. The pairing transition occurs at the bulk critical temperature T_c, where superconductivity is stabilized within small and homogeneous regions of the sample generically called grains. The regime of approach to the zero resistance state reveals the occurrence of a coherence transition at a lower temperature T_c0. This transition is related to the connective nature of the granular samples and is controlled by fluctuations of the order-parameter phase of individual grains. Our experiments show that the Zn-doping, besides depressing the pairing critical temperature, strongly enlarges the temperature range dominated by effects related to the coherence transition. The substitution of Ba by Sr causes only a small reduction of T_c, but also enhances significantly the effects related to the grain coupling phenomenology. In general, our results indicate that these impurity substitutions in YBa₂Cu₃O_7-δ produce or magnify the granularity at a microscopic level, enhancing the effects of phase fluctuations in the conductivity near the transition.     

A note on magnetization of high temperature superconductors (YBCO, BSCCO) in mixed state

We present a critical study of the temperature and field dependence magnetization of high temperature superconductors (HTSCs). The controversial field dependence of dM/d ln B for YBa₂Cu₃O₇ (YBCO) and Bi₂Sr₂CaCu₂O₈ (BSCCO) is discussed using different models. Moreover, for both the systems the magnetization (M(H)) dependence is compared with field (H) dependence.     

弱场下熔融织构YBa2Cu3O7-δ样品局域磁通蠕动的实验研究

利用半导体霍尔探头测量法在液氮温度下研究了低场下圆柱状熔融织构YBa₂Cu₃O_7-δ样品的局域磁通蠕动行为.对瞬时加减场样品端面局域磁场的磁弛豫,磁滞回线以及不同扫场速率下局域磁场的变化进行了测量,观察到了对数时间磁弛豫的行为,发现由加场和去场数据所得的激活能U₀有明显的不同.磁滞回线测量中,局域点的磁场随外场几乎同步变化,不同扫场速率下局域磁场随外场变化的差别不大.实验结果表明,外场除对样品侧面外,对端面也有明显的穿 关键词： 局域磁通蠕动 激活能 磁弛豫     

Effects of divalent impurities on the fluctuation conductivity of YBa2Cu3O7 single crystals

We have studied experimentally the in-plane fluctuation conductivity near the superconducting transition in single crystal samples of YBa₂Cu₃O₇, Y_0.98Ca_0.02Ba₂Cu₃O₇, YBa_1.9Sr_0.1Cu₃O₇ and YBa₂Cu_2.97Zn_0.03O₇. In order to test the stability of the observed fluctuation regimes, low magnetic fields were applied perpendicular to the Cu-O₂ atomic planes. When the transition is approached from above we first observe a three-dimensional (3D) Gaussian regime then a crossover to a genuine critical region where the exponent is consistent with the predictions of the 3D-XY-E universality class. Decreasing further the temperature towards T_c, our results systematically reveal the occurrence of a regime beyond 3D-XY characterized by a very small critical exponent. We propose that this regime is precursory to a weak first-order superconducting transition driven by antiferromagnetic excitations related to the pseudogap phenomenon. The dilution of divalent impurities in YBa₂Cu₃O₇ does not affect the stability of the fluctuation regime beyond 3D-XY and in the case of Ca doping a further approach towards the first-order behaviour is observed.     

Studies of resistance switching effects in metal/YBa2Cu3O7−x interface junctions

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa₂Cu₃O_7−x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa₂Cu₃O_7−x thin film-PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa₂Cu₃O_7−x films in the nano-scale vicinity of the junction interface under applied electrical fields.     

YBa2Cu3O7-x涂层导体的外延生长和性能对CeO2缓冲层的依赖性

利用倾斜衬底沉积法在无织构的金属衬底上生长了MgO双轴织构的模板层,在这一模板层上实现了YBa₂Cu₃O_7-x薄膜的外延生长.在外延YBa₂Cu₃O_7-x薄膜前,依次沉积了钇稳定的立方氧化锆和CeO₂作为缓冲层.利用X射线衍射2θ扫描、扫描、Ω扫描和极图分析测定了这些膜的结构和双轴织 关键词： 2Cu₃O_7-x镀膜导体')" href="#">YBa₂Cu₃O_7-x镀膜导体 2缓冲层')" href="#">CeO₂缓冲层 厚度依赖性 外延生长     

Magnetic field dependence of vortex activation energy: A comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors

The dissipative mechanism at low current density is compared in three different classes of superconductors. This is achieved by measuring the resistance as a function of temperature and magnetic field in clean polycrystalline samples of NbSe₂, MgB₂ and Bi₂Sr₂Ca₂Cu₃O₁₀ (BSCCO) superconductors. Thermally activated flux flow behaviour is seen in all the three systems and clearly identified in bulk MgB₂. While the activation energy at low fields for MgB₂ is comparable to Bi₂Sr₂Ca₂Cu₃O₁₀, its field dependence follows a parabolic behaviour unlike a power-law dependence seen in Bi₂Sr₂Ca₂Cu₃O₁₀. We analyse our results based on Kramer’s scaling for grain boundary pinning in MgB₂ and NbSe₂.