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YBa2Cu3O7-x涂层导体的外延生长和性能对CeO2缓冲层的依赖性
引用本文:李美亚,汪 晶,刘 军,于本方,郭冬云,赵兴中.YBa2Cu3O7-x涂层导体的外延生长和性能对CeO2缓冲层的依赖性[J].物理学报,2008,57(5):3132-3137.
作者姓名:李美亚  汪 晶  刘 军  于本方  郭冬云  赵兴中
作者单位:(1)武汉大学物理科学与技术学院,武汉 430072; (2)武汉大学物理科学与技术学院,武汉 430072;武汉大学教育部声光材料与器件重点实验室,武汉 430072
基金项目:教育部留学回国人员科研启动基金(批准号:2004-527)资助的课题.
摘    要:利用倾斜衬底沉积法在无织构的金属衬底上生长了MgO双轴织构的模板层,在这一模板层上实现了YBa2Cu3O7-x薄膜的外延生长.在外延YBa2Cu3O7-x薄膜前,依次沉积了钇稳定的立方氧化锆和CeO2作为缓冲层.利用X射线衍射2θ扫描、扫描、Ω扫描和极图分析测定了这些膜的结构和双轴织 关键词: 2Cu3O7-x镀膜导体')" href="#">YBa2Cu3O7-x镀膜导体 2缓冲层')" href="#">CeO2缓冲层 厚度依赖性 外延生长

关 键 词:YBa2Cu3O7-x镀膜导体  CeO2缓冲层  厚度依赖性  外延生长
收稿时间:2007-08-20
修稿时间:2007年8月20日

Dependence of growth and property of YBa2Cu3O7-x coated conductors on the thickness of CeO2 buffer layer
Li Mei-Y,Wang Jing,Liu Jun,Yu Ben-Fang,Guo Dong-Yun and Zhao Xing-Zhong.Dependence of growth and property of YBa2Cu3O7-x coated conductors on the thickness of CeO2 buffer layer[J].Acta Physica Sinica,2008,57(5):3132-3137.
Authors:Li Mei-Y  Wang Jing  Liu Jun  Yu Ben-Fang  Guo Dong-Yun and Zhao Xing-Zhong
Abstract:Biaxially textured MgO templates were grown on un-textured metal substrates by inclined-substrate-deposition and YBa2Cu3O7-x films were epitaxially grown on these substrates by pulsed laser deposition. Yttria-stablized-zirconia and CeO2 were deposited in turn as buffer layers prior to YBa2Cu3O7-x growth. The biaxial alignment features of the films were examined by X-ray diffraction 2θ-scan,pole-figure,-scan and rocking curve of Ω angles. The Raman spectroscopy,scanning electron microscopy and atomic force microscopy were used to characterize the orientation order,morphology and surface roughness of the YBa2Cu3O7-x films,respectively. The influence of the thickness of CeO2 on the properties of the YBa2Cu3O7-x films were investigated and the singnificant and unique dependence of the properties of YBa2Cu3O7-x films on the thickness of CeO2 were revealed. The possible mechanisms for this dependence were discussed.
Keywords:YBa2Cu3O7-x-coated conductors  cerium oxide  thickness effect  epitaxial growth
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