NdBa2Cu3O7-δ/YBa2Cu3O7-δ多层膜体系的外延结构和磁通钉扎的研究

采用脉冲激光沉积技术,在单晶SrTiO₃基底上外延生长了一系列名义结构为p×(NdBa₂Cu₃O_7-δ(m)/YBa₂Cu₃O_7-δ(n))的多层膜和准多层膜(单元层NdBa₂Cu₃O_7-δ较厚而YBa₂Cu₃O_7-δ呈非连贯的岛状分布,m,n为激光脉冲数,p为重复周期).样品的超导转变温度在87—91 K范围,具体大小取决于不同的调制结构,多层膜的重复周期越大,层状界面越多,超导转变温度就越低.磁传输测量表明,准多层的样品不仅具有较高的超导转变温度,而且具有较强的磁通钉扎性能,77K零场下的临界电流密度高达4×10⁶ A/cm²,显示出良好的应用前景. 关键词： 2Cu₃O_7-δ')" href="#">NdBa₂Cu₃O_7-δ 多层膜 磁通钉扎 临界电流密度     

利用脉冲激光沉积技术在双轴织构的Ni基带上外延CeO2薄膜

利用脉冲激光沉积技术在氢还原气氛下成功地在双轴织构的Ni基带上外延了高质量的CeO₂薄膜. x射线衍射θ—２θ扫描和ω扫描结果表明，CeO₂薄膜在Ni基带上呈c轴方向生长，存在很强的平面外织构；极图和φ扫描显示它具有良好的平面内织构. Ni基片上织构的CeO₂薄膜为进一步在其上外延高质量的YBa₂Cu₃O_7-x超导薄膜提供了很好的模板. 关键词： 双轴织构的Ni基带 2薄膜')" href="#">CeO₂薄膜 脉冲激光沉积     

退火氧压对YBa2Cu3O7-x薄膜中的激光感生热电电压效应的影响

测量了在不同氧压下退火生长的YBa₂Cu₃O_7-x(YBCO)薄膜中的激光感生热电电压(LITV)信号,发现随退火氧压的增大可使LITV信号的峰值有2—4倍的增强,并且变化趋势与薄膜热电势的各向异性随氧含量的变化规律相同.波长在473—808nm范围内的连续激光辐照,在5000Pa的氧压下退火生长的YBCO薄膜中探测到的LITV信号最大;而紫外脉冲激光辐照时,LITV信号的最大值出现在退火氧压为10⁵Pa 关键词： 2Cu₃O_7-x薄膜')" href="#">YBa₂Cu₃O_7-x薄膜 激光感生热电电压 各向异性的Seebeck系数 氧含量     

金属有机物化学气相沉积法生长Ga2（1-x）In2xO3薄膜的结构及光电性能研究

采用金属有机物化学气相沉积（MOCVD）法在蓝宝石（0001）衬底上制备出了Ga_2（1-x）In_2xO₃（x=01—09）薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明：当In组分x=02时,样品为单斜β-Ga₂O₃结构;x=05的样品,薄膜呈现非晶结构,退火处理后薄膜结构得到明显的改善 关键词： 金属有机物化学气相沉积 2（1-x）In_2xO₃薄膜')" href="#">Ga_2（1-x）In_2xO₃薄膜 蓝宝石衬底 退火     

Ce4+离子在Ca2SnO4一维结构基质中的电荷迁移光谱研究

利用高温固相反应法制备了Ca₂Sn_1-xCe_xO₄和Ca_2-ySr_ySn_1-xCe_xO₄一维结构发光体. XPS结果显示 Ca₂SnO₄拥有两种结合能分别为5277 eV和5293 关键词： 2Sn_1-xCe_xO₄')" href="#">Ca₂Sn_1-xCe_xO₄ 2-ySr_ySn_1-xCe_xO₄')" href="#">Ca_2-ySr_ySn_1-xCe_xO₄ 一维结构 电荷迁移光谱     

关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究

利用电子束蒸发方法将MgB₂超导薄膜沉积到Al₂O₃(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)=U₀(1-T/(T_c+δ))ⁿ(1-H/H 关键词： 2/Al₂O₃')" href="#">MgB₂/Al₂O₃ 超导体 电阻转变 各向异性     

Si1-xGex合金半导体中CiCs和CiOi缺陷随Ge含量的变化

采用从头计算(ab initio)的方法对Si和Si_1-xGe_x合金半导体材料中C_iC_s缺陷的性质进行探讨,同时也对比调查了C_iO_i缺陷在Si和Si_1-xGe_x合金中的性质. 在不同Ge含量的Si_1-xGe_{x关键词： 1-x}Ge_x合金')" href="#">Si_1-xGe_x合金 从头计算法 iC_s缺陷')" href="#">C_iC_s缺陷 iO_i缺陷')" href="#">C_iO_i缺陷     

B位等价掺杂SrBi4Ti4O15铁电材料的性能研究

采用了传统的固相烧结工艺,制备了不同Zr和Hf掺杂量的SrBi₄Ti_4-xZr_xO₁₅（x=000,003, 006,010,020）和SrBi₄Ti_4－xHf_xO₁₅（x=000,0005, 0015,0030,0060）的陶瓷 关键词： 4Ti_4-xZr_xO₁₅')" href="#">SrBi₄Ti_4-xZr_xO₁₅ 4Ti_4－xHf_xO₁₅')" href="#">SrBi₄Ti_4－xHf_xO₁₅ 铁电性能 介电性能     

在氧-水蒸气存在下单相Sr2(Gd,Ce)2Cu2RuO10的合成及其电学性质

传统固相反应所合成的锶系钌铜氧化物，通常总伴有少量铁磁性SrRuO₃杂相.采 用氧(或空 气)_水蒸气混合气氛下的新型固相反应，既能成功合成锶系钌铜氧化物的前驱物纯相Sr₂G dRuO₆(211相), 也能进一步在相对低的温度下成功合成锶系钌铜氧1222纯相化 合物RuSr₂(Gd,Ce)₂Cu₂O₁₀ (Ru_1222）， 使其中SrRuO _{关键词： 水蒸气参与的新型固相反应 2}(Gd')" href="#">RuSr₂(Gd 2Cu_{2< /sub>O10纯相')" href="#">Ce)2Cu2< /sub>O10纯相 3杂相')" href="#">SrRuO3杂相 电学性质}     

Co(S1-xSex)2系统中的铁磁量子相变

针对Co(S_1-xSe_x)₂系统在x=0.11附近发生的铁磁金属到顺磁金属相变,制备了一系列不同Se替代浓度的多晶样品.通过对其结构和电阻率-温度ρ(T)关系的系统观测,结果发现,样品铁磁相变温度T_C随着Se替代浓度x值的增加,以(1-x)^1/2关系单调下降,其二级铁磁相变转变为一级相变 关键词： 量子相变 自旋量子涨落 1-xSe_x)₂')" href="#">Co(S_1-xSe_x)₂     

c-Axis orientation control of YBa2Cu3O7−x films grown on inclined-substrate-deposited MgO-buffered metallic substrates

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on non-textured metal substrates with inclined-substrate-deposited (ISD) MgO as template. The biaxial texture feature of the films was examined by X-ray pole-figure analysis, φ-scan, and 2θ-scan. A tilt angle of 32° of the MgO[001] with respect to the substrate normal was observed. Epitaxial growth of YBCO films with c-axis tilt angle of 32° with respect to the substrate normal was obtained on these substrates with SrTiO₃(STO) as buffer layer. Whereas, by choosing yttria-stabilized ZrO₂ and CeO₂ instead of STO as buffer layer, a c-axis untilted YBCO film was obtained. Higher values of T_c=91 K and J_c=5.5×10⁵ A/cm² were obtained on the c-axis untilted YBCO films with 0.46 μm thickness at 77 K in zero field. Comparative studies revealed a unique role of CeO₂ in controlling the orientation of the YBCO films grown on ISD-MgO buffered metal substrates.     

Effect of CeO2 buffer layer thickness on the structures and properties of YBCO coated conductors

Biaxially textured YBa₂Cu₃O_7−x (YBCO) films were grown on inclined-substrate-deposited (ISD) MgO-textured metal substrates by pulsed laser deposition. CeO₂ was deposited as a buffer layer prior to YBCO growth. CeO₂ layers of different thickness were prepared to evaluate the thickness dependence of the YBCO films. The biaxial alignment features of the films were examined by X-ray diffraction 2θ-scans, pole-figure, ?-scans and rocking curves of Ω angles. The significant influence of the CeO₂ thickness on the structure and properties of the YBCO films were demonstrated and the optimal thickness was found to be about 10 nm. High values of T_c = 91 K and J_c = 5.5 × 10⁵ A/cm² were obtained on YBCO films with optimal CeO₂ thickness at 77 K in zero field. The possible mechanisms responsible for the dependence of the structure and the properties of the YBCO films on the thickness of the CeO₂ buffer layers are discussed.     

Interface and grain boundary structures in YBa2Cu3O7-x and YBa2Cu4O8 materials

Y₂BaCuO₅YBa₂Cu₃O_7-x (Y211/Y123) interfaces in melt-processed YBa₂Cu₃O_7-x were studied by high-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy. Yttrium enrichment and barium depletion were observed locally at the Y211/Y123 interfaces where Y123 (001) facets were present. This effect may be interpreted as the result of lattice substitution of Ba by Y near these interfaces. Cation nonstoichiometry was found near Y211/Y123 interfaces where liquid phases (Cu-Ba-O) were present. This chemical disorder introduces numerous point defects in the Y123, and these defects may act as additional pinning sites alongwith stacking faults. A comparison of grain boundary (GB) chemical composition in polycrystalline YBa₂Cu₃O_7-x and YBa₂Cu₄O₈(Y124), studied using nanoprobe parallel-detection electron energy-loss spectroscopy (EELS), is presented. The studies of Y124 show that stoichiometric grain boundaries can also form weak links between superconducting grains. It is suggested that weak-link behavior is determined largely by misorientation at grain boundaries.     

Low-temperature growth of high-Tc superconducting films by plasma-enhanced metal-organic chemical vapor deposition

Plasma-enhanced MOCVD in which metal-organic compounds are sublimated directly into the growth chamber is studied for the first time as a new low-temperature process for growing superconducting YBa₂Cu₃O-_-x thin films. Y(THD)₃, Ba(THD)₂, Cu(THD)₂ and oxygen are used as metal sources and oxydizing agent. Emission spectroscopy reveals that activated metal-organic compounds and activated oxygen species are present during film growth. Superconducting YBa₂Cu₃O_7-x films whose zero-resistivity temperature are 50 K and 82 K are grown at 550°C and 600°C.     

The transverse laser induced thermoelectric voltages in step flow growth （1-x）Pb(Mg1/3Nb2/3)O3-xPbTiO3 thin films

This paper reports that the transverse laser induced thermoelectric voltages (LITV) are observed for the first time in the step flow growth (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT,x = 0.20, 0.33, 0.50) thin films deposited on vicinal-cut strontium titanate single crystal substrates. Because lead magnesium niobate-lead titanate is a solid solution of lead magnesium niobate (PMN) and lead titanate (PT), there are two types of signals. One is wide with a time response of a microsecond, and the other superimposed with the wide signal is narrow with a time response of a nanosecond. The transverse LITV signals depend on the ratio of PMN to PT drastically. Under the irradiation of 28-ns pulsed KrF excimer laser with the 248-nm wavelength,the largest induced voltage is observed in the 0.50Pb(Mg1/Nb2/3)O3-0.50PbTiO3 films. Moreover, the effects of film thickness, substrates, and tilt angles of substrates are also investigated.     

Effect of substrate temperature on electrical and magnetic properties of epitaxial La1−x Pb x MnO3 films

Epitaxial La_1−x Pb _x MnO₃ (LPMO) thin films, grown on (100) SrTiO₃ substrates by laser ablation technique at different temperatures between 600 and 850°C, have been characterized for electrical and magnetic properties. The temperature dependence of resistivity showed that the metal-insulator transition temperature (T _MI) decreases with increasing substrate temperature, which has been attributed to decrease in Pb content in the filsm. The YBa₂Cu₃O _x /La_1−x MnO₃ heterostructures, exhibiting both superconductivity and ferromagnetism, have been fabricated.     

The role of interfacial morphology in multilayers based on high T c YBa2Cu3O7-x

The interfacial microstructures in CaTiO₃/YBa₂Cu₃O_7-x /SrTiO₃/LaAlO₃/CaRuO₃ multilayers grown on (001) LaAlO₃ substrates has been characterized using transmission electron microscopy in combination with scanning electron microscopy. The morphology of films grown on both flat surfaces and on stepped surfaces patterned by ion beam milling were interpreted in terms of effects that influence epitaxial orientation relationships, nucleation of Y₂O₃ particles, and pinhole formation. The general conclusions are that a-axis oriented YBa₂Cu₃O_7-x particles should be avoided in multilayer structures. The particles give rise to cracking and pinhole formation. Local surface roughness, which may be due to ion beam milling or to the growth mechanism of YBCO, induces Y₂O₃ particle nucleation and pinhole formation. Very steep surface slopes cause the formation of a-axis YBa₂CU₃O_7-x particles. A critical size effect of the Y₂O₃ particles is suggested.     

Effects of divalent impurities on the fluctuation conductivity of YBa2Cu3O7 single crystals

We have studied experimentally the in-plane fluctuation conductivity near the superconducting transition in single crystal samples of YBa₂Cu₃O₇, Y_0.98Ca_0.02Ba₂Cu₃O₇, YBa_1.9Sr_0.1Cu₃O₇ and YBa₂Cu_2.97Zn_0.03O₇. In order to test the stability of the observed fluctuation regimes, low magnetic fields were applied perpendicular to the Cu-O₂ atomic planes. When the transition is approached from above we first observe a three-dimensional (3D) Gaussian regime then a crossover to a genuine critical region where the exponent is consistent with the predictions of the 3D-XY-E universality class. Decreasing further the temperature towards T_c, our results systematically reveal the occurrence of a regime beyond 3D-XY characterized by a very small critical exponent. We propose that this regime is precursory to a weak first-order superconducting transition driven by antiferromagnetic excitations related to the pseudogap phenomenon. The dilution of divalent impurities in YBa₂Cu₃O₇ does not affect the stability of the fluctuation regime beyond 3D-XY and in the case of Ca doping a further approach towards the first-order behaviour is observed.