钴离子注入对二氧化钛晶体的结构和光学性能的影响

采用离子注入法制备了钴离子掺杂的金红石相TiO₂样品;离子注入能量、注量分别为40 keV(1×10¹⁶cm^-2),80 keV(5×10¹⁵,1×10¹⁶,5×10¹⁶,1×10¹⁷cm^-2),120 keV(1×10¹⁶cm^-2). 通过XRD,XPS和UV-Vis等手段对掺杂前后样品的结构和光学性能进行了表征,分析了掺杂元素在金红石TiO₂中的存在形式. XRD测试表明随着注入能量的增加晶体的损伤程度增加. UV-Vis测试表明掺杂后所有样品在可见光区的吸收增强; 并且随着注量的增加,注量为5×10¹⁵cm^-2到5×10¹⁶cm^-2范围内注入样品的光学带隙逐渐变小. 关键词： 钴 二氧化钛 离子注入 掺杂     

As+注入硅的紫外-可见椭圆偏振光谱

本文采用椭圆偏振光谱法研究了剂量为1×10¹⁶—3×10¹²cm^-2的As⁺注入硅,及其在700℃退火后的光学性质。得出:当As⁺注入剂量增大到某一程度后,便呈非晶特性。低于临界剂量的样品,其n-λ,ε₂-λ关系曲线随剂量的增大而往下方移动,呈有规律变化;退火后,在大于4000?波段,n-λ与ε₂-λ曲线基本恢复到单晶硅状态。但在小于4000?的紫外区却未完全恢复,注入剂量越大,偏离单晶硅就越大。并指出,紫外光区是离子注入硅的信息敏感区;用有效质量模型计算出注入剂量与损伤度的关系。计算结果与实验符合得较好。 关键词：     

离子注入Si损伤分布的光谱法多层分析

应用多层模型和最优化方法,由实验测得的离子注入Si的椭偏光谱以及单晶Si和离子注入非晶Si的光学常数,能分析离子注入Si的损伤分布。我们测量了2.1—4.6eV能量范围的椭偏光谱和光学常数,建立了多层计算模型和最优化方法。在模拟分析的基础上,计算了能量为40keV,剂量分别为4×10¹³和1.4×10¹⁴cm^-2的As⁺注入Si的损伤分布,并与背散射测量的结果比较。用多层模型和最优化方法也能从光谱分析其它物理量的分布,只要这些物理量对光学性质有显著的影响,并且在测量过程中不随光子能量而改变。 关键词：     

单边分子束外延硅pn结C-V关系的新特点

本文研究了以分子束外延硅为超薄n区的pn结的C-V特性,推导了当该结的耗尽区扩展到外延层边缘后的C^-2-V关系。据此,由实验可求出非故意掺杂的硅分子束外延层的杂质浓度为8.0×10¹⁴cm^-3。从而建立起一种测量超薄分子束外延层掺杂浓度的新方法。 关键词：     

用椭圆偏光法研究硅中砷离子注入的损伤和退火效应

我们用椭圆偏光法对As⁺离子注入Si的损伤和退火效应进行了测量。对As⁺注入能量为150keV、注入剂量为10¹⁶cm^-2的情况,测得的折射率分布呈现平台型,表明出现了非晶质层。在600—700℃间有一转变温度,高于此温度退火,可消除非晶质层。实验结果表明椭圆偏光法亦是测定辐射损伤的有用工具。 关键词：     

控制氧化层对双势垒纳米硅浮栅存储结构性能的影响

在等离子体增强化学气相沉积(PECVD)系统中,利用逐层淀积非晶硅(a-Si)和等离子体氧化相结合的方法制备二氧化硅(SiO₂)介质层.电容电压(C-V)和电导电压(G-V)测量结果表明：利用该方法在低温(250 ℃)条件下制备的SiO₂介质层均匀致密,其固定氧化物电荷和界面态密度分别为9×10¹¹cm^-2和2×10¹¹cm^-2·eV^-1,击穿场强达4.6 MV/cm,与热氧化形成的SiO₂介质层的性质相当.将该SiO₂介质层作为控制氧化层应用在双势垒纳米硅(nc-Si)浮栅存储结构中,通过调节控制氧化层的厚度,有效阻止栅电极与nc-Si之间的电荷交换,延长存储时间,使存储性能得到明显改善. 关键词： 等离子体氧化 二氧化硅 纳米硅 控制氧化层     

在LHC上寻找希格斯粒子

 大型强子对撞机(Large Hadron Collider,简称LHC)2010 年3 月开始运行,对撞能量为7TeV,这是设计能量14 TeV 的一半。瞬时亮度从10²⁷cm^-2s^-1迅速上升,2010 年底达到10³²cm^-2s^-1,2011 年底达到10³³cm^-2s^-1,积分亮度有5/fb, 超过原来的预期。LHC 进入出成果阶段。     

退火对AlGaInP/GaInP多量子阱 LED外延片性能的影响

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5.6×10¹⁸cm^-3增大到6.5×10¹⁸cm^-3,p型AlGaInP层的空穴浓度由6.0×10¹⁷cm^-3增大到1.1×10¹⁸cm^-3.但退火温度为780℃时,p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×10¹⁷cm^-3和1.7×10¹⁷cm^-3,且Mg原子在AlGaInP系材料中的扩散加剧,导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460～700℃退火范围内,并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时,AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.     

纯锆上离子注入钇和镧后的表面分析

用金属蒸汽真空弧源，以40kV加速电压对纯锆样品分别进行了10¹⁶—10¹⁷/cm²的钇、镧离子注入，注入温度约为130℃.然后对注入样品进行表面分析.x射线光电子能谱分析表明，注入的钇以Y₂O₃形式存在，镧以La₂O₃形式存在.俄歇电子能谱表明，纯锆基体表面的氧化膜厚度随着离子注入剂量的增加而增加，当离子注入剂量达到10¹⁷/cm²时，氧化膜的厚度达到了最大值.卢瑟福背散射显示镧层的厚度约为30nm，同时直接观察到当离子注入剂量为(La+Y)10¹⁷/cm²时，纯锆样品表面发生了严重的溅射. 关键词： 纯锆 钇和镧离子共注入 卢瑟福背散射 x射线光电子能谱     

注氮GaAs中的深能级及其对自由载流子的补偿

详细研究了注氮n型GaAs中深的和浅的杂质缺陷的电学性质。深能级瞬态谱(DLTS)技术测量表明,能量为140keV和剂量为1×10¹³cm^-2的氮离子注入并经800℃退火30min的GaAs中存在四个电子陷阱,E₁(0.111),E₂(0.234),E₃(0.415),E₄(0.669)和一个空穴陷阱H(0.545),而在能量为20keV和剂量为5×10^{14关键词：}     

Structure and properties of molybdenum implanted with high-flux carbon ion

High purity molybdenum was implanted by C ion in a metal vapour vacuum arc (MEVVA) implanter. The influence of implantation parameters was studied by varying ion fluence and ion current density. The samples were implanted by 45 keV C ion with fluences from 1×10¹⁵ to 1×10¹⁸ ions/cm², respectively. The as-implanted samples were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and nanoindenter. Different morphologies were observed on the surfaces of the as-implanted samples due to irradiation damage, and clearly related to implantation parameters. XRD spectra confirm formation of β-Mo₂C with ion fluences equal to or larger than 1×10¹⁶ ions/cm², and formation of -Mo₂C with ion fluence of 1×10¹⁸ ions/cm². The maximum nanohardness and maximum modulus of the as-implanted samples increased gradually with increasing ion fluence, and reached the corresponding maximum values with ion fluence of 1×10¹⁸ ions/cm². The experimental results suggest that the structure and properties of the as-implanted Mo samples exhibited strong dependence on implantation parameters.     

Low energy ion-beam post hydrogenation of phosphor implanted amorphous silicon films

Glow-discharge-deposited intrinsic hydrogenated amorphous silicon films have been doped by P⁺ implantation in varying doses between 10¹⁶ and 2 × 10²¹ atoms/cm³ and annealed at 260°C. Subsequent hydrogenation of the samples produces a decrease in conductivity explained by a hydrogen-induced decrease of the electrically active fraction of the dopant.     

FORMATION OF A BURIED LAYER OF ALUMINIUM NITRIDE BY HIGH DOSE N2+ IMPLANTATION INTO ALUMINIUM

Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N₂⁺ ions with doses ranging from 4.3×10¹⁷ to 1.8×10¹⁸ N/cm² were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose N_c, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N₂⁺ is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.     

Carrier and mobility profile measurements in n-type ion-implanted GaAs by the differential sheet resistivity and Hall effect technique

Multiple energy ion implantation facilities have been used to prepare essentially box-shaped dopant profiles in GaAs with plateau concentrations between 2 x 10¹⁶ and 8 x 10¹⁷ cm^-3. The implanted species was ²⁸Si⁺. The ion energies ranged between 40 and 400 keV. The depletion depth correction applied to the carrier and mobility profiles in the plateaux did not affect the data values but only their depth scale. Thus, in these regions the measured data (without any feed-back correction) were used to study the electrical properties of the implanted layers. Doping efficiencies between 65% and 81% and carrier mobilities in the range 3000 to 6000 cm² V^-1s^-1 were measured. Activation thresholds in the range 10¹⁵ to 10¹⁶ cm^-3 were estimated.     

EPR study of erbium-impurity complexes in silicon

Electron paramagnetic resonance (EPR) measurements have been used to characterise Er complexes formed in FZ silicon by the implantation of erbium together with either oxygen or fluorine. The samples have a 2 μm thick layer containing 10¹⁹ Er/cm³ alone or in addition 3×10¹⁹ O/cm³, 10²⁰ O/cm³ or 10²⁰ F/cm³. Various post-implantation anneals were carried out. Several different erbium centres, which have either C_1h monoclinic or trigonal symmetry, are observed and the way in which the type of centre depends on the implantation and annealing conditions is reported.     

快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions

Chemical disorder on the surface and lattice strain in GaN implanted by Fe¹⁰⁺ ions are investigated. In this study, 3-MeV Fe¹⁰⁺ ions fluence ranges from 1×10¹³ ions/cm² to 5×10¹⁵ ions/cm² at room temperature. X-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and high-resolution transmission electron microscopy were used to characterize lattice disorder. The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering. The change of tensile strain out-of-plane with fluence was measured. Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.     

砷化镓中质子注入之研究

本文中,我们研究了砷化镓中质子注入及退火恢复过程。实验用晶向<100>偏1—3°,掺Sn 5×10¹⁷-1×10¹⁸cm^-3的单晶,室温下质子注入,注入能量E约8×10⁴—2×10⁶eV,用A-B腐蚀剂对注入质子样品的解理面显结,测得质子注入高阻层的纵向深度x_j和径向扩展x_L与注入能量E的定量关系。然后,对注入质子样品,在150—800℃下退火5分钟,用双晶衍射仪研究了样品的应变恢复过程,在静电计上测量了高阻阻值随退火温度的变化。根据实验结果,讨论了砷化镓中质子注入的射程R_p,电子阻止本领S_n(E)和核阻止本领S_e(E),以及质子注入形成高阻和退火恢复的机理。 关键词：