注氮GaAs中的深能级及其对自由载流子的补偿

详细研究了注氮n型GaAs中深的和浅的杂质缺陷的电学性质。深能级瞬态谱(DLTS)技术测量表明,能量为140keV和剂量为1×10¹³cm^-2的氮离子注入并经800℃退火30min的GaAs中存在四个电子陷阱,E₁(0.111),E₂(0.234),E₃(0.415),E₄(0.669)和一个空穴陷阱H(0.545),而在能量为20keV和剂量为5×10^{14关键词：}

DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAs

This work presents a detailed study of deep and shallow level defects in nitrogen implanted n-type GaAs. Deep-level transient spectroscopy (DLTS) measurements show four electron traps and one hole trap in 140 keV nitrogen implanted GaAs after a dose of 1×10¹³cm^-2 and a thermal annealing at 800℃ for 30 min: E₁(0.111) ,E₂(0.234) ,E₃(0.415) ,E₄(0.669) ,and H(0.545). Meanwhile,only E₄ and H(0.545) defects are observed in 10 keV nitrogen-implanted GaAs after a dose of 5×10¹⁴cm^-2 and the same annealing treatment. It oncluded that E₂ and E₃ correspond to the damages due to the high-energy implantation, E₄ may be complex of intrinsic defect and implantation damage, H(0.545)is a nitrogen-related deep-level and may contribute to the free-carrier compensation in the nitrogen-implanted n-type GaAs.