As+注入硅的紫外-可见椭圆偏振光谱

本文采用椭圆偏振光谱法研究了剂量为1×10¹⁶—3×10¹²cm^-2的As⁺注入硅,及其在700℃退火后的光学性质。得出:当As⁺注入剂量增大到某一程度后,便呈非晶特性。低于临界剂量的样品,其n-λ,ε₂-λ关系曲线随剂量的增大而往下方移动,呈有规律变化;退火后,在大于4000?波段,n-λ与ε₂-λ曲线基本恢复到单晶硅状态。但在小于4000?的紫外区却未完全恢复,注入剂量越大,偏离单晶硅就越大。并指出,紫外光区是离子注入硅的信息敏感区;用有效质量模型计算出注入剂量与损伤度的关系。计算结果与实验符合得较好。 关键词：

ON ULTRAVIOLET-VISIBLE ELLIPOMETRIC SPECTRA OF As+ IMPLANTED SILICON

The radiation damage and the annealing behaviour of 1×10¹⁶-3×10¹²/cm² As⁺ implanted silicon have been measured with a TPP-1 spectroscopic ellipsometer. The results are as follows: (1) The amorphous layers were formed on the surface of Si samples when the doses of implanted As⁺ were higher than the critical value. In the case of the doses were smaller than the critical value, both the n-λ and the ε₂-λ curves for As⁺ implanted silicon shifted downward with an increase dose of implanted As⁺. (2) With annealing at 700℃, the n-λ curve and ε₂-λ curve in the spectra range of 4000-7000 ? of As⁺ implanted silicon exhibited the behavious of single crystalline silicon. However in the range of 2700-4000 ?, the curves did not show crytalline silicon behaviour and the difference between these curves and those taken with cryslline silicon increased with the doses of implanted As⁺. (3) The dose dependence of the radiantion damage has been obtained.
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