Depth-dependent mosaic tilt and twist in GaN epilayer:An approximate evaluation

An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that （103） plane and （101） plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive （103）/（101） ω-scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach.     

Charge transport in monolayer poly（3-hexylthiophene） thin-film transistors

It is found that ultrathin poly（3-hexylthiophene） （P3HT） film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0× 10-2 cm2/V-s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.     

Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

Graphene on gallium nitride(GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5–6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1Ω/square,which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.     

High resolution X-ray diffraction investigation of epitaxially grown SrTiO3 thin films by laser-MBE

SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incident X-ray diffraction, and reciprocal space mapping are used to investigate the lattice structure, dislocation density, in-plane lattice strain distribution along film thickness. From the measurement results, the effects of substrate on film lattice quality and microstructure are discussed.     

Effect of annealing on performance of PEDOT:PSS/n-GaN Schottky solar cells

We develop a heterojunction-based Schottky solar cell consisting of n-type GaN and PEDOT：PSS and also investigate the effect of annealing on the performance of the solar cell. The results show that the open circuit voltage （Voc） increases from 0.54 V to 0.56 V, 0.71 V and 0.82 eV while decreases to 0.69 eV after annealing at 100 ℃, 130 ℃, 160 ℃, and 200 ℃, respectively, which can be ascribed to the change of barrier height of PEDOT：PSS/GaN Schottky contact induced by variation of the work function of the PEDOT：PSS. Furthermore, the conductivity and surface roughness measurements of the PEDOT：PSS indicate that annealing can increase the grain size and improve the connectivity between PEDOT and PSS particles, and cause thermal degradation at the same time, which leads to the rise in short-circuit current density （ISC） up to 160 ℃ and the dropoff in ISC after annealing at 200 ℃.     

Laser-produced plasma helium-like titanium Kα x-ray source and its application to Rayleigh-Taylor instability study

Several experiments are performed on the ShenGuang-II laser facility to investigate an x-ray source and test radiography concepts.X-ray lines emitted from laser-produced plasmas are the most practical means of generating these high intensity sources.By using a time-integrated space-resolved keV spectroscope and pinhole camera,potential helium-like titanium Kα x-ray backlighting (radiography) line source is studied as a function of laser wavelength,ratio of pre-pulse intensity to main pulse intensity,and laser intensity (from 7.25 to～11.3×10 15 W/cm 2).One-dimensional radiography using a grid consisting of 5 μm Au wires on 16 μm period and the pinhole-assisted point projection is tested.The measurements show that the size of the helium-like titanium Kα source from a simple foil target is larger than 100 μm,and relative x-ray line emission conversion efficiency ξ x from the incident laser light energy to heliumlike titanium K-shell spectrum increases significantly with pre-pulse intensity increasing,increases rapidly with laser wavelength decreasing,and increases moderately with main laser intensity increasing.It is also found that a gold gird foils can reach an imaging resolution better than 5-μm featured with high contrast.It is further demonstrated that the pinhole-assisted point projection at such a level will be a novel two-dimensional imaging diagnostic technique for inertial confinement fusion experiments.     

Electric field modulation technique for high-voltage AIGaN/GaN Schottky barrier diodes

A novel structure of AIGaN/GaN Schottky barrier diode （SBD） featuring electric field optimization techniques of anode-connected-field-plate （AFP） and magnesium-doped p-type buried layer under the two-dimensional electron gas （2DEG） channel is proposed. In comparison with conventional A1GaN/GaN SBDs, the magnesium-doped p-type buried layer in the proposed structure can provide holes that can help to deplete the surface 2DEG. As a result, surface field strength around the electrode edges is significantly suppressed and the electric field along the channel is distributed more evenly. Through 2D numerical analysis, the AFP parameters （field plate length, LAFP, and field plate height, TAFP） and p-type buried layer parameters （p-type layer concentration, Np, and p-type layer thickness, Tp） are optimized to achieve a three-equal-peak surface channel field distribution under exact charge balance conditions. A novel structure with a total drift region length of 10.5 μm and a magnesium-doped p-type concentration of 1 × 10^17 cm 3 achieves a high breakdown voltage （VB） of 1.8 kV, showing 5 times improvement compared with the conventional SBD with the same device dimension.     

Investigation of the topological shape of bovine serum albumin in solution by small-angle x-ray scattering at Beijing synchrotron radiation facility

This paper reports that at a newly constructed small-angle x-ray scattering station of Beijing Synchrotron Radia- tion Facility, the topological shape of ligand-free bovine serum albumin in solution has been investigated. An appropriate scattering curve is obtained and the calculated value of the gyration radius is 31.2~=t=0.25 ~_ （11=0.1 nm） which is co- incident with other ones＇ results. It finds that the low-resolution structure models obtained by making use of ab initio reconstruction methods are fitting the crystal structure of human serum albumin very well. All of these results perform the potential of the beamline to apply to structural biology studies. The characteristics, the defects, and the improving measures of the station in future are also discussed.     

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters,such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition,using an in-plane grazing incidence x-ray diffraction technique.The results are analysed and compared with a complementary out-of-plane xray diffraction technique.The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method.The method for directly determining the in-plane lattice parameters of the GaN layers is also presented.Combined with the biaxial strain model,it derives the lattice parameters corresponding to fully relaxed GaN films.The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established,reaching to a maximum level of-0.89 GPa.     

掠入射驱动产生x射线激光的数值模拟

利用一维流体力学数值模拟程序MEDUSA和原子物理程序包，以类镍钼189nm x射线激光为例，对掠入射驱动x射线激光方案进行了研究.掠入射驱动x射线激光方案可以通过调整掠入射角来选择适合的增益区间.与正入射驱动方案相比，掠入射驱动方案加强了驱动激光在增益区内的吸收，提高了驱动激光向x射线激光的转换效率.模拟结果与实验结果符合较好. 关键词： x射线激光 掠入射辐照 激光等离子体     

Probing the local order of single phospholipid membranes using grazing incidence x-ray diffraction

We report the first grazing incidence x-ray diffraction measurements of a single phospholipid bilayer at the solid-liquid interface. Our grazing incidence x-ray diffraction and reflectivity measurements reveal that the lateral ordering in a supported DPPE (1, 2-Dipalmitoyl-sn-Glycero-3-Phosphoethanolamine) bilayer is significantly less than that of an equivalent monolayer at the air-liquid interface. Our findings also indicate that the leaflets of the bilayer are uncoupled in contrast to the scattering from free standing phosphatidylcholine bilayers. The methodology presented can be readily implemented to study more complicated biomembranes and their interaction with proteins.     

Observation of heterodyne mixing in surface x-ray photon correlation spectroscopy experiments

We report measurements of propagating capillary waves on a liquid water surface at T=5 degrees C with x-ray photon correlation spectroscopy. The experiment has been performed under grazing incidence conditions with an incoming x-ray beam below the critical angle of total external reflection. In the q region investigated the measured intensity-intensity autocorrelation functions of the liquid water surface were found to be heterodyne signals, i.e., a combination of first- and second-order correlation functions g(1)(tau) and g(2)(tau).     

Phonon modes at the 2H-NbSe2 surface observed by grazing incidence inelastic x-ray scattering

We have determined the dispersion of acoustic and optical surface phonon modes 2H-NbSe2 at the by inelastic x-ray scattering under grazing incidence conditions. Already, at room temperature, an anomaly is observed close to the charge density wave -vector position located at about one-third along the Gamma-M direction of the Brillouin zone. Our results indicate that the anomaly for the surface mode occurs at a lower energy than that measured in bulk sensitive geometry in the same experiment, showing evidence of a modified behavior in the uppermost layers. We demonstrate that inelastic x-ray scattering in grazing incidence conditions provides a unique tool to selectively study either surface or bulk lattice dynamics in a single experiment.     

Structure of a CH3S monolayer on Au(111) solved by the interplay between molecular dynamics calculations and diffraction measurements

We have investigated the controversy surrounding the (sqrt[3] x sqrt[3]) R30 degrees structure of self-assembled monolayers of methylthiolate on Au(111) by first principles molecular dynamics simulations, energy and angle resolved photoelectron diffraction, and grazing incidence x-ray diffraction. Our simulations find a dynamic equilibrium between bridge site adsorption and a novel structure where 2 CH3S radicals are bound to an Au adatom that has been lifted from the gold substrate. As a result, the interface is characterized by a large atomic roughness with both adatoms and vacancies. This result is confirmed by extensive photoelectron and grazing incidence x-ray diffraction measurements.     

Design of Highly Directive Ni-Like Ag X-Ray Laser at 13.9nm

We theoretically investigate a 13.9nm Ni-like Ag x-ray laser using a one-dimensional hydrodynamic code coupled with an atomic physics data package. The population inversion is transiently pumped by a grazing incident 0.5ps main pulse irradiating into an optimized plasma, which is generated by a normal incidence 300ps pulse and a subsequent grazing incidence 300ps pulse. The effect of the grazing-incidence angle on the source position of the output x-ray laser is investigated. Near zero deflecting angle is found for the peak output intensity of the Ni-like Ag x-ray lasers, with a small FWHM divergence of 5mrad. It is predicted that saturation can be achieved with a total pump energy of 165mJ.     

基于X射线掠射法的纳米薄膜厚度计量与量值溯源研究

为了实现纳米薄膜厚度的高精度计量,研制了可供台阶仪、扫描探针显微镜等接触测量的纳米薄膜样片,研究了X射线掠射法测量该纳米薄膜样片厚度的基本原理和计算方法,导出了基于Kiessig厚度干涉条纹计算膜层厚度的线性拟合公式,并提出了一种可溯源至单晶硅原子晶格间距和角度计量标准的纳米膜厚量值溯源方法,同时给出了相应的不确定度评定方法.实验证明:该纳米薄膜厚度H测量相对扩展不确定度达到U=0.3 nm+1.5%H,包含因子k=2.从而建立了一套纳米薄膜厚度计量方法和溯源体系.     

Partial crystallinity in alkyl side chain polymers dictates surface freezing

We have studied the structure of a novel crystalline surface monolayer on top of a disordered melt of the same material [poly(n-alkyl acrylate)s] using grazing incidence x-ray diffraction. The grazing incidence x-ray diffraction, surface tension, and bulk latent heat results show that side chains crystallize except the nine methylene units of the alkyl side chains closest to the polymer backbone. The partial crystallinity along with a thicker surface layer, due to the additional length of the linker group, explains why the difference between the surface order-to-disorder transition temperature and bulk melting temperature increases with a decrease in the length of the alkyl side chain.     

Demonstration of Mo Soft X-Ray Lasers with a Grazing Incidence Pumping Scheme in the XL-II Facility

A Ni-like Mo soft x-ray laser （SXRLs） operating at 18.9nm has been demonstrated by employing a grazing incidence pumping scheme with 120m^3 in the 200ps pre-pulse and 140mJ in the 200fs main pulse. The SXRL gain is estimated to be 1.5-3cm^-1 when a grazing incidence angle of 14° is applied. Numerical simulations are also performed to investigate the dynamics of the ion distribution. It is found that a high intensity at 2.4× 10^14 W/cm^2 of the 200fs main pulse could heat the pre-plasma rapidly to an appropriate temperature for population inversion, and could compensate for the shortage of the total pump energy to a certain extent.     

应用同步辐射光源的表面物理研究—现状与展望

本文综述了应用同步辐射光源的几种主要表面物理研究技术。内容包括:同步辐射光电子能谱(SRPES)、表面广延X射线吸收边精细结构(SEXAFS)、光电子衍射(PED)和掠角入射X射线衍射(GIXD)等。对每种技术的原理、应用实例和最新进展都作了较详细的介绍。     

Energieverlustmessungen von schnellen Elektronen an Oberflächen von Ga,In, Al und Si

The excitation of surface plasmons on liquid indium, gallium and aluminum surfaces as well as on silicon cleavage faces is studied by reflection of 10 keV electrons at grazing incidence (80° up to 89°). Due to the high excitation probability of surface plasmons at these large angles of incidence multiples of surface plasmons are observed. (Except on Si.) The Poisson distribution of the intensity of these energy losses is verified quantitatively as well as the dependence on (cos)^–1. The value of the excitation probability indicates that at grazing incidence the electrons are reflected just at the surface without penetrating into the volume. This is further demonstrated by the lack of volume plasmons. The surface loss positions in the solid and the liquid state show the calculated differences due to the density difference of both phases