| Charge transport in monolayer poly（3-hexylthiophene） thin-film transistors |
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| 引用本文： | 许宗祥,Roy V.A.L.Charge transport in monolayer poly（3-hexylthiophene） thin-film transistors[J].中国物理 B,2014(4):700-703. |
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| 作者姓名： | 许宗祥 Roy V.A.L |
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| 作者单位： | [1]Department of Chemistry, South University of Science and Technology of China, Shenzhen 518055, China [2]Center Of Superdiamond and Advanced Films （COSDAF）, Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China |
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| 基金项目： | Project supported by the Special Funds for the Development of Strategic Emerging Industries in Shenzhen City,China(Grant No.JCYJ20120830154526537);the Start-up Funding of South University of Science and Technology of China;the Strategic Research Grant of City University of Hong Kong of China(Grant No.7002724) |
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| 摘 要： | It is found that ultrathin poly（3-hexylthiophene） （P3HT） film with a 2.5 nm-thick layer exhibits a higher mobility of 5.0× 10-2 cm2/V-s than its bulk counterpart. The crystalline structure of the as-fabricated ultrathin P3HT layer is verified by atomic force microscopy as well as grazing incidence X-ray diffraction. Transient measurements of the as-fabricated transistors reveal the influence of the interface traps on charge transport. These results are explained by the trap energy level distribution at the interface manipulated by layers of polymer film.
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| 关 键 词： | 薄膜晶体管 电荷传输 噻吩 己基 掠入射X射线衍射 单层 原子力显微镜 结晶结构 |
Charge transport in monolayer poly(3-hexylthiophene) thin-film transistors |
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| Abstract: | field-effect transistor, monolayer P3HT, spin coating, grazing incidence X-ray diffraction |
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| Keywords: | field-effect transistor monolayer PHT spin coating grazing incidence X-ray diffraction |
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