Response of the capacitance and dielectric loss of the SrRuO<Subscript>3</Subscript>/SrTiO<Subscript>3</Subscript>/SrRuO<Subscript>3</Subscript> film heterostructures to variations in temperature and electric field

Three-layer epitaxial heterostructures with a 750-nm-thick intermediate strontium titanate layer between two strontium ruthenate conductive thin-film electrodes have been grown by laser deposition. Photolithography and ion etching have been used to form film parallel-plate capacitors based on the grown heterostructures. The capacitance (C) and dielectric loss tangent (tanδ) of the parallel-plate capacitors have been measured in the temperature range T = 4.2–300 K at an applied bias voltage of up to ±2.5 V and without it. At T > 100 K, the temperature dependence of the dielectric permittivity (ε) of the SrTiO₃ intermediate layer is well approximated by the Curie–Weiss law taking into account the capacitance induced by the penetration of an electric field into the oxide electrodes. At T ≈ 20 K, the dielectric permittivity ε of the SrTiO₃ intermediate layer decreases by approximately 20% in an electric field of 25 kV/cm. The dielectric loss tangent of the film capacitor heterostructures decreases monotonically with a decrease in the temperature in the range from 300 to 80 K and almost does not depend on the electric field strength. However, in the range from 80 to 4.2 K, the dielectric loss tangent increases nonmonotonically (abruptly) with a decrease in the temperature and decreases significantly in an applied electric field.     

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The electric field strength and electron mean kinetic energy in co-axial dielectric barrier discharge (DBD) were estimated based on static electric filed model. Through the comparison of the single dielectric layer DBD with the double dielectric layer DBD, it was found the electric field strength and electron mean kinetic energy in double dielectric layer DBD are greater than that in the single dielectric layer DBD under the same electrode configuration and discharge conditions. The calculation results can successfully applied to explain the toluene degradation efficiency in double dielectric layer DBD is larger than that in the single dielectric layer DBD under the same discharge parameters.     

估算线筒式介质阻挡放电场强和电子平均动能的方法

利用静电场模型对线筒式介质阻挡放电电场强度进行了计算,并对电子平均动能进行了估算。通过对单双介质阻挡放电(DBD)的对比,发现在相同的放电条件下,双介质DBD产生的电场强度和电子平均动能比单介质DBD的要大。这就很好地解释了在相同的放电参数下,甲苯的降解效率在双介质DBD中要比单介质DBD中大。     

Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes

We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.     

电极材料及偏压极性对氧化物介质击穿行为的影响及机制

忆阻器和能量存储电容器具有相同的三明治结构,然而两个器件需要的操作电压有明显差异,因此在同一个器件中,研究操作电压的影响因素并对操作电压进行调控,实现器件在不同领域的应用是十分必要的一个工作.本文利用反应磁控溅射技术在ITO导电玻璃、Pt/Si基底上生长了多晶ZrO_2和非晶TaO_x薄膜,选用不同金属材料Au, Ag和Al用作上电极构建了多种金属/氧化物介质/金属三明治结构的电容器,研究了器件在不同偏压极性下的击穿强度.结果发现:底电极是ITO的ZrO_2基电容器在负偏压下的击穿电场比Pt电极器件稍大.不管底电极是ITO还是Pt, Ag作为上电极时器件的击穿强度均存在明显的偏压极性依赖性,正偏压下的击穿电场减小了一个数量级;相反,在Al作为上电极的Al/TaO_x/Pt器件中,正向偏压比负向偏压下的击穿电场增加了近2倍.上述器件的不同击穿行为分别可以由氧化物电极和介质界面层间氧的迁移和重排、电化学活性金属电极的溶解迁移和还原以及化学活性金属电极与氧化物界面的氧化还原反应来解释.该实验结果对有不同操作电压要求的器件,如忆阻器和介质储能电容器等在器件设计和操作方面具有指导意义.     

Force and torque on a sphere with electric dipole moment moving in a dielectric fluid in the presence of a uniform magnetic field

The torque exerted by a magnetic field on a sphere with permanent electric dipole moment moving steadily in a dielectric fluid is calculated to lowest order in the dipole moment. Hence the force exerted on a steadily rotating sphere with electric dipole moment is found by Onsager symmetry. The modification from the vacuum values of torque and force depends only on the slip parameter and the static dielectric constant of the fluid. It is suggested that for a macroscopic ferro electric sphere the calculated effects could be measured experimentally without great difficulty.     

多层铁电陶瓷击穿分析及优化

建立了多层串联PZT95/5爆电换能组件3维数值模型,对固化封装条件下陶瓷介质击穿问题进行了计算分析,计算结果表明:在不改动器件外部结构尺寸条件下,采用等厚度PZT95/5叠片结构布局对进一步提高输出电压方面存在瓶颈。为克服上述影响以及降低爆电换能组件击穿概率,提出了PZT95/5铁电陶瓷非等厚度布局解决方案。为实现上述设想,通过引入不等式约束条件计算得到一组非等厚度优化布局,将爆电换能组件所用PZT95/5铁电陶瓷数量减至19片,同时有效实现该布局下,各片PZT95/5陶瓷电压均低于对应厚度击穿电压的优化目标。     

介电力显微镜探测氧化锌纳米线表面吸附分子对电导率的影响

利用场效应晶体管器件和介电力显微镜来研究氧化锌纳米线表面吸附分子对其电导率的影响. 相比于空气中,ZnO纳米线场效应晶体管器件在氮气中电导率更高,介电力显微镜得的介电信号也是在氮气中更大. 影响ZnO纳米线电导率变化的主要原因是表面吸附分子数量的变化,而并不是电极与材料之间接触性质的变化.     

Decomposition of the total momentum in a linear dielectric into field and matter components

The long-standing resolution of the Abraham–Minkowski electromagnetic momentum controversy is predicated on a decomposition of the total momentum of a closed continuum electrodynamic system into separate field and matter components. Using a microscopic model of a simple linear dielectric, we derive Lagrangian equations of motion for the electric dipoles and show that the dielectric can be treated as a collection of stationary simple harmonic oscillators that are driven by the electric field and produce a polarization field in response. The macroscopic energy and momentum are defined in terms of the electric, magnetic, and polarization fields that travel through the dielectric together as a pulse of electromagnetic radiation. We conclude that both the macroscopic total energy and the macroscopic total momentum are entirely electromagnetic in nature for a simple linear dielectric in the absence of significant reflections.     

Induced polarization charge density and microscopic local field for a covalent semiconductor

A model calculation of the static macroscopic dielectric function is presented for diamond in which the consequence of the localised and plane wave features of the band structure on the polarizability are separated. Microscopic local field and polarization charge density induced by an uniform external field are analyzed in real space. Although the macroscopic dielectric function is essentially intensitive to small changes in the parameters of the model, microscopic quantities can be rather sensitive suggesting that one should be carefull in constructing a microscopic dielectric matrix to be used in calculating, for instance, phonon frequencies.     

Strong amplification of an electric field and electro-optical response in ultrathin heterostructures ferroelectric-linear dielectric

An electroded heterostructure consisting of a dye layer sandwiched between two polymer ferroelectric layers is discussed. The dye layer plays a role of the probe of the electric field measured by an electroabsorption technique. Using this new method the electric field in ferroelectric and dielectric layers can be measured separately. When an a.c. voltage is applied to the heterostructure, the electric field in the dye layer increases 2.2 times (up to 0.55 GV/m), whereas the field in the ferroelectric decreases 2 times with respect to the average field in the entire structure. Moreover, the dye layer sandwiched between the ferroelectric layers may stand without breakdown the fields 5–7 times higher than a neat reference dye layer confined between metal electrodes. Therefore, the performance of electro-optical, electromechanical and other field controlled devices may be improved considerably when their functional materials are placed between ferroelectrics layers.     

Capacitance analysis of a circular disk on a dielectric layer

Using the Hankel transform, the mixed boundary value problem of a conducting, circular disk on a dielectric layer in an electric field was reduced to the solution of dual integral equations. Analytical expressions of the capacitance of the electrical system to the second approximation were derived for the ratio of the layer thickness to the disk radius being larger than one and the ratio being less than one, respectively. Both expressions yield numerical results in accord with those reported in literature. The capacitance of a circular disk on a semi-infinite dielectric can be used for a ratio larger than or equal to 4. Using the results, the thickness effect on electrowetting of a disk-like conducting film on a dielectric substrate was discussed. There exists an upper bound of the electric voltage applied to the film above which the saturation of contact angle or local instability will occur.     

Dielectric characteristics and thermal behaviour of terbium fumarate heptahydrate crystals

Dielectric properties, ac conductivity and thermal characteristics of terbium fumarate heptahydrate crystals grown by gel diffusion method have been carried out. The real part of dielectric constant, dielectric loss and ac conductivity of the material have been measured as a function of temperature and frequency of the applied electric field. Dielectric constant, dielectric loss and ac conductivity of the title compound were systematically investigated, showing a hump at about 85 °C, which could be attributed to water molecules in the crystal boundary. The dielectric anomaly exhibited by the material has been correlated with its thermal behaviour. The ac conductivity of the material obeys the Jonscher's power law relation; σ(ω) = σ_o + Aω^s, with the temperature dependent power exponent s < 1. The ac conductivity of the compound has been found to increase with the increase in frequency. The material is suggested to show protonic conduction. The non-isothermal kinetics was used to evaluate the activation energy for the dehydration step of thermal decomposition of terbium fumarate heptahydrate by using the Coats–Redfern integral method.     

Study of the transition from conduction to injection in an electrohydrodynamic flow in blade-plane geometry

A dielectric fluid can be set into motion with the help of electric forces, mainly Coulomb force. This phenomenon, called electroconvection, can be induced by electrohydrodynamic conduction, injection, and induction. Conduction is based on the dissociation/recombination phenomenon, generates heterocharge layers, and occurs for low electric field values. Injection produces homocharge layers in the electrode vicinity and requires stronger electric fields to be initiated. This study is an experimental observation of the transition from conduction to injection of a dielectric liquid in blade-plane geometry using Particle Image Velocimetry. In addition, the electric current is measured to completely understand the flow behavior.     

多层介质膜脉冲压缩光栅近场光学特性分析

利用傅里叶模式理论分析了TE波自准直角入射的使用条件下，多层介质膜光栅的光栅区和多层膜区电场分布的特点.分别讨论了HfO₂和SiO₂为顶层光栅材料时，光栅结构参数对光栅脊峰值电场的影响，结果表明，对于不同膜厚的顶层材料，存在一个最佳膜厚度，使光栅脊峰值电场最小，并且当膜厚增大时，设计大高宽比的光栅可以降低该电场峰值.最后，在大角度条件下使用多层膜光栅也可以降低光栅脊处的峰值电场. 关键词： 衍射光学 多层介质膜光栅 模式理论 损伤阈值     

光谱学方法研究介质阻挡沿面放电辉光模式的电场分布

利用介质阻挡沿面放电装置,在低气压空气中实现了辉光放电模式。利用光电倍增管对放电发光信号进行检测,发现外加电压每半周期出现一个发光脉冲,并且正负半周期的光脉冲是不对称的。利用Photoshop软件处理放电的照片,研究发现平行于高压电极不同位置的发光强度基本相同,然而距离高压电极越远,发光强度减小。放电中总电场由外加电场和电介质积累的壁电荷电场共同决定,确定该电场具有重要意义。通过分析放电的发射光谱中N+₂(B 2Σ+_u→X 2Σ+_g)谱线391.4 nm和N₂的第二正带系(C 3Π_u→B 3Π_g)谱线337.1 nm的比值,可以定性地说明电场的分布。研究发现电场在高压电极附近较大而远离高压电极处较小。这些研究结果对沿面放电的数值模拟和工业应用具有重要的价值。     

Dielectric relaxation in aqueous solutions and suspensions I. Solutions and suspensions

The dielectric constants and dielectric loss factors of aqueous solutions and suspensions are measured as a function of the specific electrical conductivity, temperature, and electric field frequency. The dispersion of the dielectric constant and the dielectric loss factor in solutions is explained by the formation of a electric double layer at the electrodes and the redistribution of the electric field between the region adjoining the electrodes and the remaining volume of the measuring cell. An equivalent-circuit calculations for suspensions displays acceptable agreement with experiment.     

Deformation of a pretilted nematic liquid crystal layer in an electric field

The deformation of the optical axis of a nematic liquid crystal layer under the influence of an electric field is caused by the dielectric torque. This momentum counteracts with an elastic torque generated by interfacial forces between the surface of the electrode and the liquid crystal. By means of a variational analysis, the deformation profiles within the liquid crystal layer are calculated, assuming large interfacial energies and various angles of pretilt of the liquid crystal directors with respect to the electrodes. Both the extreme case of a homeotropic (vertical) alignment on one electrode and a homogeneous (parallel) alignment on the opposite electrode, as well as the general case of arbitrary and different alignments on both electrodes, lead to heavily pretilted liquid crystal layers, resulting in definite deformation profiles without disclinations. Liquid crystal cells prepared in this way neither show threshold voltages nor delay times when electrical fields are applied. Measured and calculated characteristics of such liquid crystal cells are presented, they show good agreement.     

Novel high-voltage power lateral MOSFET with adaptive buried electrodes

A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results.     

Uniform rotation of smectic layers of a ferroelectric liquid crystal in an asymmetric electric field

An asymmetric ac electric field with amplitudeE=10 V/μm gives rise to a matched rotation of the normal to the smectic layers, while a sinusoidal fieldE=1 V/μm is used to study the rotation in the method of modulation total internal reflection ellipsometry, which makes it possible to probe the region of a ferroelectric liquid crystal (FLC) next to the electrode (h≈0.7 μm). It is shown that the angle of rotation of the normal to the smectic layers near the surface of the electrode varies reversibly as a function of the polarity and number of electric pulses applied, just as in the interior region. The characteristic dynamic properties of thin layers of nematic liquid crystals, such as an anomalously long relaxation time and a high-frequency relaxation process, are observed in thin FLC layers.