冷冻靶中硅冷却臂的温度场和力学分析

冷冻靶是实现惯性约束聚变高能量增益的重要靶型。冷却臂是冷冻靶的重要部件之一,通过它将冷源与铝套筒相连接,用于获得靶丸内均匀氘氚冰层时所需的精确温度,同时冷却臂也用于均匀夹持铝套筒。首先测试分析了硅材料在深低温下的热传导系数,表明硅材料在该温区具有优异的热传导能力。研究了硅冷却臂结构参数对冷却臂温度场分布的影响。分析不同晶向硅冷却臂周向均匀夹持铝套筒的特性,提出基于(111)晶向硅片研制冷却臂。研究了冷却臂力臂夹持力和共振频率,并对硅冷却臂的热-结构耦合进行分析。最后设计具有16个夹持力臂的二级分叉结构的冷却臂。基于微电子机械系统技术研制了硅冷却臂样机,并测试了冷却臂的侧壁垂直度和力学特性。将研制的硅冷却臂与铝套筒进行装配,表明冷却臂中力臂的力学特性能够实现对套筒的夹持。     

提高离子束刻蚀亚微米光栅侧壁陡直度的方法

现代亚微米光栅的应用通常要求栅脊侧壁陡直。通过比较两种配备不同离子源的刻蚀机的反应离子束刻蚀结果,认为影响亚微米光栅侧壁陡直度的一个重要因素是离子束发散角(束散角),且小束散角有利于获得陡直的光栅侧壁。国内应用最广泛的双栅考夫曼刻蚀机束散角较大(大于13°),致使用常规方法获得的熔石英光栅的侧壁倾角仅为77°。针对此刻蚀机,尝试了三种提高侧壁陡直度的方法:旋转倾斜刻蚀法、交替倾斜刻蚀法和二次金属掩模法,分别把侧壁倾角提高到86°、86°和82°。最后从掩模侧壁收缩速率和槽底部与顶部离子通量的差异对束散角对侧壁陡直度的影响给予解释,并说明了上述三种方法的工作机理。     

强流二极管阳极靶温度和热形变模拟

以电子束在靶中的能量沉积剖面为桥梁,建立了二极管阳极靶温度和热形变模拟方法。该方法可获知二极管不同工作状态下靶的温度分布和热形变情况,为靶热-力学损伤研究提供基础数据,为二极管构型设计和寿命提升提供技术支撑。将该方法应用于“强光一号”短γ二极管,计算结果显示:当阳极离子密度大于1014 cm?3时（强箍缩）,靶表面温度最高可达5500～6000 ℃,热形变量达约4.5 mm;无离子流时（弱箍缩）,温度处在4500 ℃左右,形变为2.8～3.5 mm。     

GaN基光栅的干法刻蚀工艺

研究了基于BCl_3/Cl_2电感耦合等离子体(ICP)刻蚀对氮化镓基分布式反馈激光器中光栅的刻蚀,详细研究了刻蚀气体BCl_3/Cl_2流量比和压强对刻蚀台面侧壁的粗糙度、陡直度以及刻蚀速率的影响,发现以SiO_2作为硬掩膜,刻蚀速率、台面侧壁粗糙度以及陡直度随着刻蚀气体BCl_3/Cl_2流量比以及压强变化有着显著变化。保持ICP功率和射频功率分别为300 W和100 W,当刻蚀气体BCl_3/Cl_2流量比为1、压强为1.33 Pa(10 mTorr),最终得到200.6 nm/min的可控刻蚀速率、倾角85.3°且光滑的台面侧壁,实现了在保证光栅侧壁光滑的同时提升侧壁倾角。陡直且光滑的光栅对于提升氮化镓基分布式反馈激光器的器件性能及其稳定性非常重要。     

GaN基光栅的干法刻蚀工艺EI北大核心CSCD

研究了基于BCl_(3)/Cl_(2)电感耦合等离子体(ICP)刻蚀对氮化镓基分布式反馈激光器中光栅的刻蚀,详细研究了刻蚀气体BCl_(3)/Cl_(2)流量比和压强对刻蚀台面侧壁的粗糙度、陡直度以及刻蚀速率的影响,发现以SiO_(2)作为硬掩膜,刻蚀速率、台面侧壁粗糙度以及陡直度随着刻蚀气体BCl_(3)/Cl_(2)流量比以及压强变化有着显著变化。保持ICP功率和射频功率分别为300 W和100 W,当刻蚀气体BCl_(3)/Cl_(2)流量比为1、压强为1.33 Pa(10 mTorr),最终得到200.6 nm/min的可控刻蚀速率、倾角85.3°且光滑的台面侧壁,实现了在保证光栅侧壁光滑的同时提升侧壁倾角。陡直且光滑的光栅对于提升氮化镓基分布式反馈激光器的器件性能及其稳定性非常重要。     

束参量对X射线照射量的影响

用蒙特卡洛方法来讨论束参量（半径、发射度和能量)对轫致辐射照射量的影响．结果表明，当束击靶半径一定时，靶正前方一米处的照射量X1随发射度增加而减小；当发射度一定时，照射量先随半径增加而急速增加，在束半径大于Rbm后，随半径进一步的增加而缓慢降低．也研究了束参量对照射量角分布的影响．因为使用了电子束的K—V分布，所得X1值是偏于保守的．     

980nm锥形半导体激光器刻蚀工艺

为了解决半导体激光器传统刻蚀工艺中侧壁陡直度差和器件难以重复制作的问题,利用湿法腐蚀与干法刻蚀相结合的刻蚀手段,对980nm锥形半导体激光器刻蚀工艺进行优化.通过对台面粗糙度与刻蚀速度的研究,确定湿法腐蚀液和浓度配比的差异.并分析电感耦合等离子刻蚀对脊波导与腔破坏凹槽表面形貌的影响.研究结果表明,选择配比为NH_3·H_2O∶H_2O_2∶H_2O=1∶1∶50的腐蚀液进行湿法腐蚀,刻蚀速率约为7nm/s,速率容易控制.且样品表面具有较好的粗糙度和均匀性,利用电感耦合等离子刻蚀得到的脊波导与腔破坏凹槽侧壁陡直度良好,没有出现横向钻蚀的情况.     

冲击波影响下的聚能射流侵彻扩孔方程

 当聚能射流侵彻速度大于靶板声速时,由于冲击波的产生导致波阵面后材料的状态参数发生改变,影响聚能射流的侵彻扩孔过程,致使波阵面前后不能直接应用伯努利方程求解。在考虑侵彻过程中冲击波影响的基础上,对射流轴向侵彻和径向扩孔的力学特性进行了分析,并对冲击波的传播和衰减进行了假设,着重探讨侵彻速度大于靶板声速时冲击波的影响。针对侵彻速度大于和小于靶板声速两种情况,建立了相应的侵彻模型,提出了一个新的聚能射流侵彻扩孔方程。将该方程与Szendrei-Held模型进行了比较,结果表明,新模型更符合Held等人的实验数据,冲击波对轴向侵彻的影响远小于对径向扩孔的影响。     

低温下双温区多管道绝热支撑设计及数值模拟研究

本文以液氢温区下的双温区多管道为研究对象, 对其进行了热流分析, 建立了几何模型, 采用有限元方法进行了热-结构耦合分析求解, 分析了不同壁厚及不同支撑宽度下漏热、 应力及形变的变化规律. 研究结果表明: 壁厚减小时, 漏热值减少, 绝热支撑总体应力增加, 支撑形变增大; 宽度减小时,20 K 温区漏热量减少,80 K 温区漏热增加, 总漏热量减少, 支撑应力增大, 最大形变量增大. 最终, 针对某工程使用的双温区四管道, 拟合出了壁厚与漏热、 最大应力及最大形变量变化规律的曲线、 方程, 宽度与双温区漏热、 最大应力及最大形变量变化规律的曲线、 方程. 在应力、 漏热、 形变量均允许的情况下, 得出最薄壁厚可取到1 .576 mm; 在壁厚取为2 mm 时, 得出最小宽度可取为0.572 mm.     

Wolter-I型聚焦镜热变形数值研究

为了给聚焦镜热控及支撑结构优化设计提供依据,对爱因斯坦探针项目中的后随X射线望远镜的镜片组进行了三维全尺寸建模与有限元分析.研究了轴向、径向两种温度梯度,以及有、无支撑结构对镜片组形变的影响,并对面形误差与温差范围的关系进行了探究.结果表明:对于无支撑结构,轴向温度梯度下面形误差与半径关系接近线性关系,径向温度梯度下则接近分段二次关系;支撑结构发生热变形时,会使镜片组产生与之对应的面形误差,令同相圆度误差转变为异相圆度误差,并使镜片组整体面型误差峰谷值增加32.25%~123.01%,均方根值增加4.13%~5.14%;对于有支撑结构,热致面形误差与温差成正比,温差每增加1℃,轴向温度梯度下,面形误差峰谷值与均方根值分别增加7.76μm、1.12μm,而对于径向温度梯度则分别增加9.67μm、1.60μm.聚焦镜片热致面形误差在一定情况下与镜片尺寸、温差成线性关系,并受到支撑结构变形的显著影响.     

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phase crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposition.The microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic force microscopy.The results indicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality,such as large grain size,small lattice microstrain and smooth surface morphology on low-cost glass substrates.     

The effect of substrate roughness on the static friction of CuO nanowires

The dependence of static friction on surface roughness was measured for copper oxide nanowires on silicon wafers coated with amorphous silicon. The surface roughness of the substrate was varied to different extent by the chemical etching of the substrates. For friction measurements, the nanowires (NWs) were pushed by an atomic-force microscope (AFM) tip at one end of the NW until complete displacement of the NW was achieved. The elastic bending profile of a NW during this manipulation process was used to calculate the ultimate static friction force. A strong dependence of static friction on surface roughness was demonstrated. The real contact area and interfacial shear strength were estimated using a multiple elastic asperity model, which is based on the Derjaguin–Muller–Toporov (DMT) contact mechanics. The model included vertical elastic flexure of NW rested on high asperities due to van der Waals force.     

Evolution of microstructure in polycrystalline silicon thin films upon excimer laser crystallization

Polycrystalline silicon (poly-Si) films fabricated by pulsed excimer laser crystallization (ELC) have been investigated using time-resolved optical measurements, scanning-electron microscopy, and cross-sectional transmission-electron microscopy. Detailed crystallization mechanisms are proposed to interpret the microstructure evolution of poly-Si films for both frontside and backside ELC. It is found that the backside ELC is a good candidate for the manufacturing of low-temperature polycrystalline silicon because of the high laser efficiency and low surface roughness of the poly-Si films.     

Si,Al对激光熔覆MoFeCrTiW高熵合金涂层组织性能的影响

为了提高材料表面的耐磨性和高温抗氧化性,利用激光熔覆技术在Q235钢表面制备了MoFeCrTiW高熵合金涂层,并采用X射线衍射仪(XRD)、扫描电镜(SEM)和磨损试验机等研究了Si,Al添加对高熵合金涂层组织、相结构、耐磨性和高温抗氧化性能的影响。结果表明:激光熔覆MoFeCrTiW高熵合金涂层组织为等轴晶,单独添加等物质的量的Si或Al时,涂层分别为共晶组织或树枝晶,同时添加等物质的量的Si和Al时,涂层组织为细小的等轴晶。各高熵合金涂层的主体相均为BCC相,随着Si,Al的添加,BCC相的晶格常数减小。添加等物质的量的Al有助于抑制涂层中金属间化合物的形成,使涂层耐磨性降低;添加等物质的量的Si则会形成含Si的金属间化合物和一些未知相,提高涂层耐磨性。激光熔覆MoFeCrTiW高熵合金涂层在800℃的抗氧化性较高,Si、Al的添加可使涂层的高温抗氧化性进一步提高。     

Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon

Silicon is the most often used material in micro electromechanical systems (MEMS). Detailed understanding of its mechanical properties as well as the microstructure is crucial for the reliability of MEMS devices. In this paper, we investigate the microstructure changes upon indentation of single crystalline (100) oriented silicon by transmission electron microscopy (TEM) and Raman microscopy. TEM cross sections were prepared by focused ion beam (FIB) at the location of the indent. Raman microscopy and TEM revealed the occurrence of phase transformations and residual stresses upon deformation. Raman microscopy was also used directly on the cross‐sectional TEM lamella and thus microstructural details could be correlated to peak shape and peak position. The results show, however, that due to the implanted Ga⁺ ions in the lamella the silicon Raman peak is shifted significantly to lower wavenumbers. This hinders a quantitative analysis of residual stresses in the lamella. Furthermore, Raman microscopy also possesses the ability to map deformation structures with a lateral resolution in the submicron range. Copyright © 2009 John Wiley & Sons, Ltd.     

Structural and optical properties study of nanocrystalline Si (nc-Si) thin films deposited on porous aluminum by plasma enhanced chemical vapor deposition

In this paper we report detail investigation and correlation between micro-structural and optical properties of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure. The influence of the microstructure of the nc-Si thin films on their optical properties was investigated through an extensive characterization. The effect of anodisation currents on the microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). The optical constants (n and k as a function of wavelength) of the films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The silicon layer (SL) was modeled as a mixture of void, crystalline silicon and aluminum using the Bruggeman approximation. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties. A very bright photoluminescence (PL) was obtained and find to depend on anodisation current.     

Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.     

Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH₄ and H₂ as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as ～9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.     

Formation of nanostructured weldments in the Al-Si system using electrospark welding

Electrospark welding (ESW) electrodes were manufactured from three binary aluminum-silicon alloys consisting of 12 and 17 wt% silicon, produced using chill and sand casting. The electrodes were used to assess the feasibility of producing aluminum-silicon weldments consisting of nano-sized silicon particles embedded in nanostructured aluminum matrix, using the ESW process. Line tests were performed to determine the optimal processing parameters resulting in a high quality deposit. X-ray diffraction (XRD) as well as optical and field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) was performed to determine the composition and microstructure of the depositions. It was determined that a capacitance of 110 μF and a voltage of 100 V resulted in the highest quality deposition. Furthermore it was determined that the ESW process was capable of producing a microstructure consisting of an extremely fine-grained silicon phase ranging from ∼6 to 50 nm for the eutectic composition, and 10-200 nm for the hypereutectic compositions. Finally it was determined that the functional thickness limit of the aluminum-silicon deposit produced under these process parameters was 120 μm.     

Study on crystalline to amorphous structure transition of Cr coatings by magnetron sputtering

The influence of deposition rate on crystalline to amorphous microstructure transition of Cr coatings was studied through preparation of Cr coatings deposited onto silicon wafers using magnetron sputtering technique. The microstructure and morphology of Cr coatings were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results show that Cr coating prepared at 400 W exhibits dense columnar crystalline structure and the crystallite size and crystallization rate are increased expressly in the initial 5 min. When the deposition rate achieved to the maximum, Cr coating shows a case of infinite periodic renucleation where new crystals are assumed to be nucleated periodically on the surfaces of growing crystals and strong persistence of the columnar growth morphology is apparent. However, Cr coating exhibits overall microstructure of amorphous phase mixed with a few nano-crystal grains as the deposition rate decreases to the minimum.