GaN基光栅的干法刻蚀工艺

研究了基于BCl_3/Cl_2电感耦合等离子体(ICP)刻蚀对氮化镓基分布式反馈激光器中光栅的刻蚀,详细研究了刻蚀气体BCl_3/Cl_2流量比和压强对刻蚀台面侧壁的粗糙度、陡直度以及刻蚀速率的影响,发现以SiO_2作为硬掩膜,刻蚀速率、台面侧壁粗糙度以及陡直度随着刻蚀气体BCl_3/Cl_2流量比以及压强变化有着显著变化。保持ICP功率和射频功率分别为300 W和100 W,当刻蚀气体BCl_3/Cl_2流量比为1、压强为1.33 Pa(10 mTorr),最终得到200.6 nm/min的可控刻蚀速率、倾角85.3°且光滑的台面侧壁,实现了在保证光栅侧壁光滑的同时提升侧壁倾角。陡直且光滑的光栅对于提升氮化镓基分布式反馈激光器的器件性能及其稳定性非常重要。     

GaN基光栅的干法刻蚀工艺EI北大核心CSCD

研究了基于BCl_(3)/Cl_(2)电感耦合等离子体(ICP)刻蚀对氮化镓基分布式反馈激光器中光栅的刻蚀,详细研究了刻蚀气体BCl_(3)/Cl_(2)流量比和压强对刻蚀台面侧壁的粗糙度、陡直度以及刻蚀速率的影响,发现以SiO_(2)作为硬掩膜,刻蚀速率、台面侧壁粗糙度以及陡直度随着刻蚀气体BCl_(3)/Cl_(2)流量比以及压强变化有着显著变化。保持ICP功率和射频功率分别为300 W和100 W,当刻蚀气体BCl_(3)/Cl_(2)流量比为1、压强为1.33 Pa(10 mTorr),最终得到200.6 nm/min的可控刻蚀速率、倾角85.3°且光滑的台面侧壁,实现了在保证光栅侧壁光滑的同时提升侧壁倾角。陡直且光滑的光栅对于提升氮化镓基分布式反馈激光器的器件性能及其稳定性非常重要。     

HfO2顶层多层介质膜脉宽压缩光栅的离子束刻蚀

多层介质膜光栅是高功率激光系统的关键光学元件. 为了满足国内强激光系统的迫切需求,首先利用考夫曼型离子束刻蚀机开展了HfO₂顶层多层介质膜脉宽压缩光栅的离子束刻蚀实验研究. 采用纯Ar及Ar和CHF₃混合气体作为工作气体进行离子束刻蚀实验,获得了优化的离子源工作参数. 结果表明,与纯Ar离子束刻蚀相比,Ar和CHF₃混合气体离子束刻蚀时的HfO₂/光刻胶的选择比大. HfO₂的离子束刻蚀过程中再沉积效应明显,导致刻蚀光栅占宽比变大. 根据刻蚀速率分布制作的掩模遮挡板可以提高刻蚀速率均匀性,及时清洗离子源和更换灯丝,可保证刻蚀工艺的重复性. 利用上述技术已成功研制出多块最大尺寸为80 mm×150 mm、线密度1480线/mm、平均衍射效率大于95%的HfO₂顶层多层介质膜脉宽压缩光栅. 实验结果与理论设计一致,为大口径多层介质膜脉宽压缩光栅的离子束刻蚀提供了有益参考. 关键词： 光栅 多层介质膜 离子束刻蚀     

湿法和溶脱法的亚微米ZnO:Al光栅制备

以激光干涉法得到的光刻胶图案为掩模,采用湿法刻蚀和溶脱-剥离法制备了具有良好减反射特性的亚微米掺铝氧化锌（ZnO:Al, AZO）光栅。表面形貌特征和反射光谱测试结果表明,湿法刻蚀较溶脱-剥离法得到的AZO光栅表面更为粗糙,两者均方根粗糙度分别为25.4,7.6 nm。在400～900 nm波段,两种方法制备的周期和高度相同的光栅,平均总反射率分别由AZO薄膜的12.5%下降到8.3%和10.2%。两者的平均镜面反射率分别为6.2%和6.6%,平均漫反射率分别为2.1%和3.6%。湿法刻蚀得到的表面较为粗糙AZO光栅的漫反射明显减弱,从而导致总的减反特性优于溶脱-剥离法得到的表面起伏相对较小的AZO光栅。     

2000 l/mm X射线镂空透射光栅的制备研究

在满足工艺要求的前提下,通过模拟光栅衍射,设计出镂空透射光栅模型,在此基础上将电子束和X射线光刻技术相结合,研究了制造2000 l/mm X射线镂空透射光栅的新工艺技术.首先利用电子束光刻和微电镀技术在镂空聚酰亚胺薄膜底衬上制备X射线母光栅掩模.然后利用X射线光刻和微电镀技术实现了光栅图形的复制,之后采用紫外光刻和微电镀技术制作加强筋结构,最后通过腐蚀体硅和等离子体刻蚀聚酰亚胺完成镂空透射光栅的制作.从此新的制造工艺结果上来看.制备的光栅栅线平滑,占空比合理,侧壁陡直,不同光栅之间一致性好,完全可以满足应用需求,充分表明了该制造技术是透射式X射线衍射光学元件制造的良好选择.     

基于一种新微细加工技术的亚波长光栅的研制

描述了一种新的亚波长光栅的微细加工技术，即电子束（EB）扫描曝光得到相应的亚微米级的线宽图形，再利用快速原子束刻蚀设备获得了高深宽比的立体结构。用此加工技术获得了100nm以下的刻蚀精度，并研制成功亚波长光栅。该亚微米线宽微细加工技术可用于布拉格光栅、半导体激光器、无反射表面等需要亚微米结构的器件中。     

2000 1/mm X射线镂空透射光栅的制备研究

在满足工艺要求的前提下,通过模拟光栅衍射,设计出镂空透射光栅模型,在此基础上将电子束和X射线光刻技术相结合,研究了制造2000 1/mm X射线镂空透射光栅的新工艺技术.首先利用电子束光刻和微电镀技术在镂空聚酰亚胺薄膜底衬上制备X射线母光栅掩模.然后利用X射线光刻和微电镀技术实现了光栅图形的复制,之后采用紫外光刻和微电镀技术制作加强筋结构,最后通过腐蚀体硅和等离子体刻蚀聚酰亚胺完成镂空透射光栅的制作.从此新的制造工艺结果上来看.制备的光栅栅线平滑,占空比合理,侧壁陡直,不同光栅之间一致性好,完全可以满足应用需求,充分表明了该制造技术是透射式X射线衍射光学元件制造的良好选择.     

Ar+离子束刻蚀制作凸面闪耀光栅

凸面闪耀光栅是研制高光谱分辨率超光谱成像系统的关键器件之一.由于要求的闪耀角度一般较小,制作工艺难度大,其衍射效率与理论值有较大差距,一直制约其应用.针对上述问题与难点进行了分析,通过光刻胶光栅掩模制作和Ar<'+>离子束刻蚀等工艺制作了凸面闪耀光栅.针对离子束大掠入射刻蚀凸球面时槽形闪耀角不易一致的难题,利用转动扫描...     

亚波长介质光栅的制作误差分析

利用严格耦合波理论（RCWA）分析了方向误差和面形误差对亚波长光栅衍射效率的影响. 通过分析发现,方向误差和图案边缘钝化对光栅的衍射效率影响不大,而刻蚀过程中由于侧壁倾斜而产生的面形误差对光栅的衍射效率影响非常大.在制作亚波长光栅时,可以通过选取合理的刻蚀系统或增大占空比的方法来避免基底型误差的出现.该结论对于制作亚波长光栅具有重要的指导作用.同时根据得出的结论,选用专门用于硅深刻蚀的等离子体辅助刻蚀系统制作出了红外30 μm亚波长抗反射光栅,检测结果显示,光栅沟槽侧壁陡峭且透过率和设计值吻合得比较好.     

大口径多层介质膜光栅衍射效率测量及其在制作工艺中的应用

多层介质膜光栅是高功率激光系统的关键光学元件.为了满足国内强激光系统的迫切需求, 在大口径多层介质膜光栅的研制过程中,建立了单波长自准直条件下的衍射效率测量方法及其误差分析. 结果表明误差主要由探测器的噪声和测试人员的差异产生,对衍射效率测试精度的影响是±1%. 在此基础上,将光栅衍射效率及其分布测量技术应用于光栅制作工艺中, 作为大口径光栅无损检测的一种手段,如判断光栅掩模是否能进行离子束刻蚀、 离子束刻蚀的在线监测和是否需要再刻蚀,从而实现对大口径多层介质膜光栅离子束刻蚀过程的定量、 科学控制,提高了离子束刻蚀光栅制作工艺的成功率.利用上述技术,已成功研制出多块最大尺寸为 430 mm× 350 mm、线密度1740线/mm、平均衍射效率大于95%的多层介质膜光栅. 实验结果表明,该方法操作简单、测量快速准确,不必检测光栅微结构. 为大口径多层介质膜光栅研制的无损检测工程化奠定了基础.     

In situ endpoint detection of reactive ion-beam etching of dielectric gratings with an etch-stop layer using downstream mass spectrometry

Downstream mass spectrometry is successfully used in the reactive ion-beam etching of dielectric diffraction gratings of deep grooves with vertical sidewalls to achieve in situ endpoint detection. Silica (SiO₂) gratings with a Sc₂O₃ etch-stop layer are fabricated by reactive ion-beam etching with CHF₃ as etchant, and the mass spectrometric signal of SiF₃⁺ produced by the reactive etching of the SiO₂ grating material is monitored. When the etch-stop layer is reached, a drop of this signal occurs. By comparing the monitoring curves and resulting gratings of different etching methods, we find that the decrease of the monitored signal is strongly influenced by the sidewall steepness of the etched grating grooves. All conditions being equal, the greater sidewall steepness renders the faster decrease of the signal. Consequently, the proposed approach of endpoint detection applies well to the gratings with steep sidewalls. With the help of two previously developed methods, the sidewall steepness of grating grooves is increased, and the optimal endpoint is detected. Employing the proposed technique, we have reproducibly fabricated dielectric gratings with proper groove depth and even groove bottom.     

A novel hanging bowl-shaped mask for the fabrication of vertical sidewall structures

Contact exposure is expected to occur in conventional lithography, and can be a source of process deviations (such as shrinking and distortion of templates) during reactive ion etching and inductively coupled plasma etching, as these deviations are induced by ion bombardment. This typically results in undesired sidewall effects, such as lower sidewall angles. Here we report a novel hanging bowlshaped lithography mask that can effectively minimize sidewall effects in lithography applications. As a test case, standard silicon carbide pillars with vertical sidewalls are fabricated using this mask. The mask could be used for fabrication of high-aspect-ratio structures with ultra-violet lithography.     

Modern Applications of Plasma Etching and Patterning in Silicon Process Technology

Besides plasma etching of through-wafer interconnects in wafer stacks for vertical integration of chips, fabrication of platinum (Pt) electrodes with non-tapered sidewalls for the storage node in modern memories (DRAMs and FeRAMs) is one of the most challenging tasks of plasma process technology today. This paper describes the achievement of vertical integration of chips by plasma etching of high aspect ratio interchip vias. The etching processes for dielectrics, single crystal silicon, and the organic glue layer were all optimized for minimum reactive ion etching (RIE) lag i.e. for minimum decrease of etch rate with increasing etch depth. Furthermore the fabrication of perfect Pt electrodes for modern DRAMs and FeRAMs is reported. Vertical Pt profiles were achieved by plasma processing with resist mask. In this novel approach, the build-up of thin redepositions of Pt onto the sidewalls of the resist, obtained as a result of processing in pure Ar plasmas, is utilized to achieve a sidewall steepness of the patterned Pt film which is determined by the steepness of the pre-etch resist profile. After pattern transfer and resist stripping, the portion of the redepositions protruding above the fabricated storage node was completely removed by chemical mechanical polishing.     

摆动刻蚀法制作高衍射效率凸面闪耀光栅

通过摆动离子束刻蚀方法,制作了用于短波红外高光谱成像光谱仪的凸面闪耀光栅。该方法通过在光栅子午方向上进行摆动刻蚀,解决了凸面光栅子午方向的闪耀角一致性问题。建立了摆动刻蚀模型来分析摆动速度、束缝宽度等工艺参数对槽型演化的影响,并计算了优化的刻蚀工艺参数。制备了基底尺寸为67 mm,曲率半径为156.88 mm,刻线密度为45.5 gr/mm,闪耀角为2.2°的凸面闪耀光栅,并对其表面形貌及衍射效率进行了测量。实验结果表明,摆动刻蚀法能够制作出闪耀角一致性好、衍射效率高的小闪耀角凸面光栅,满足成像光谱仪对光谱分辨率和便携性的使用要求。     

Surface plasmon scattering on polymer-bimetal layer covered fused silica gratings generated by laser induced backside wet etching

Large amplitude fused silica gratings are prepared by combining the UV laser induced backside wet etching technique (LIBWE) and the two-beam interference method. The periodic patterning of fused silica surfaces is realized by s-polarized fourth harmonic beams of a Nd:YAG laser, applying saturated solution of naphthalene in methyl-methacrylate as liquid absorber. Atomic force microscopy is utilized to analyze how the modulation amplitude of the grating can be controlled by the fluence and number of laser pulses. Three types of plasmonic structures are prepared by a bottom-up method, post-evaporating the fused silica gratings by gold-silver bimetal layers, spin-coating the metal structures by thin polycarbonate films, and irradiating the multilayers by UV laser. The effect of the bimetal and polymer-coated bimetal gratings on the surface plasmon resonance is investigated in a modified Kretschmann arrangement allowing polar and azimuthal angle scans. It is demonstrated experimentally that scattering on rotated gratings results in additional minima on the resonance curves of plasmons excited by second harmonic beam of a continuous Nd:YAG laser. The azimuthal angle dependence proves that these additional minima originate from back-scattering. The analogous reflectivity minima were obtained by scattering matrix method calculations realized taking modulation depths measured on bimetal gratings into account.     

惯性约束聚变靶中硅支撑冷却臂的制备

论述了基于反应离子深刻蚀技术加工惯性约束聚变（ICF）靶的硅支撑冷却臂。利用扫描电子显微镜、白光干涉仪和视觉显微系统等对所制备的硅支撑冷却臂的形貌、侧壁陡直度和卡爪径向形变量等参数进行了表征分析。分析结果表明，硅支撑冷却臂的侧壁陡直度大于88，卡爪径向形变量大于20 m，符合靶的设计要求。     

Flexible 3D deep microstructures of silica glass by laser-induced backside wet etching

The well-controlled fabrication of microtrenches including inclined features using normal incidence with gradual shifting of the irradiated area was demonstrated. Based on the variation of trench width depending on the laser fluence, the existence of gaps between the edge of the irradiated area and sidewall of the trench was shown. Because of these gaps, the shifted laser pulse can stay at the bottom of the trenches in the fabrication of the inclined features. In laser-induced backside wet etching (LIBWE), the photo-activated region generated within organic solution would act on the glass surface and results in etching. It was indicated that the photo-activated region generated at the bottom of the trenches acted not only on the bottom of the trench but also on the sidewalls. Based on such etching of the sidewall, fabrication of inclined features becomes possible. In this method, the tilting angle can be changed within one deep trench. Flexible structure formation deep inside the silica glass can be achieved.     

Direct laser written waveguide-Bragg gratings in bulk fused silica

Optical waveguides that incorporate Bragg gratings have been written in bulk fused silica by using the femtosecond laser direct-write method and without the need for lithography or ion-beam techniques. A single manufacturing process is used to create waveguide-Bragg grating reflectors for operation in the C band.     

104 nm period grating fabrication in fused silica by immersion two-beam interferometric laser induced backside wet etching technique

A substantial extension of the method of two-beam interferometric laser induced backside wet etching (TWIN-LIBWE), the immersion TWIN-LIBWE, is used to fabricate fused silica gratings with a 104 nm period. The spatially filtered fourth harmonic of Nd:YAG laser (λ=266 nm, τ_FWHM=8 ns) pulses were split into two parts which then interfered at the backside of the fused silica target in contact with a liquid absorber (naphthalene methyl methacrylate saturated solution with a concentration of 1.85 mol/dm³). The hypotenuse of a rectangular fused silica prism is attached to the fused silica target with the use of distilled water as the immersion liquid. On steering the beams through the sides of the prisms, the angle between the two laser beams has been substantially increased. The resulting period of 104 nm is the minimal grating constant achievable under such experimental conditions and, to our knowledge, the smallest laser generated grating period in fused silica at present. PACS 42.62; 42.79; 81.65     

Correlation Length Measurement of Sidewall Roughness of Dry Etched Facet and Its Effect on Reflectivity

Dry etching is an important tool to fabricate various semiconductor photonic devices. The roughness of etched sidewalls should be avoided as it reduces the scattering loss. We present a spatial frequency analysis of the sidewall roughness of dry etched facets processed by reactive ion etching. A characteristic parameter corresponding to a correlation length is estimated to be ∼0.5 μm. In addition, its effect on reflectivities of etched reflectors is discussed.