热蒸发YbF3薄膜的机械特性

 实验研究了热蒸发YbF₃薄膜在大气中的应力和附着力。利用Veeco干涉仪,测试了各种工艺条件下单层YbF₃薄膜的应力。结果发现:YbF₃薄膜的残余应力为张应力,热应力在残余应力中的比重较大;沉积方式对薄膜应力的影响不大;薄膜应力在大气中有一个释放的过程。热处理后,YbF₃薄膜应力增大。     

光学薄膜残余应力分配预测模型计算方法研究

残余应力是光学薄膜研究的一个重要组成部分，它对光学元器件有很大的影响。根据弹性力学原理，基于应变不匹配，提出了一种可以预测薄膜残余应力分配的理论模型计算方法，并将计算结果与干涉仪测量值进行了对比。利用所建立的模型分析了薄膜参数变化时基底残余应力的变化情况。结果表明：所建模型合理；随着镀膜温度的增加，基底总残余应力随镀膜温度升高而呈增大的趋势;本征应力变化不太大；随着基底厚度的减小，基底上下表面应力呈增大的趋势，而薄膜应力则呈减小趋势，但变化趋势很小。基底的中心轴约位于基底上表面以下2／3处。     

CVD两步法生长ZnO薄膜及其光致发光特性

用CVD两步法在常压下于p型Si(100)衬底上沉积出具有较好择优取向的多晶ZnO薄膜。在325nm波长的光激发下,室温下可观察到显著的紫外光发射(峰值波长381nm)。高温退火后氧空位缺陷浓度增加,出现了一个450~600nm的绿光发光带,发光峰值在510nm。作为比较,用一步法生长的ZnO薄膜结晶质量稍差。在其PL谱中不仅有峰值波长389nm的紫外发射而且还出现了一个很强的蓝光发光中心(峰值波长437nm),退火后同样产生绿光发光带。对这两种绿光发光带的发光机制进行了研究,认为前者源于VO,而后者与O_Zn有密切的关系。     

Effect of annealing on the structural, optical and electrical properties of ZnO thin films by spray pyrolysis

Zinc oxide thin films have been deposited on glass substrates at a substrate temperature of 673 K by spray pyrolysis. The samples are annealed in ambient atmosphere at various temperatures. The effect of annealing on structural, electrical, and optical properties of ZnO films has been investigated. X-ray diffraction patterns show that crystallinity of the ZnO films has been improved after annealing. The morphology of ZnO thin films is studied by atomic force microscopy. The tensile strain (compressive stress) is found to decrease with increase in annealing temperature which indicates the relaxation of tensile strain in ZnO thin films. A decrease in energy band gap is observed with increase of annealing temperature. The mechanism of blue-green luminescence of ZnO thin film has been analyzed. The resistivity is found to decrease with annealing temperature.     

Residual stress and Curie temperature of Fe-N thin films prepared by dc magnetron sputtering at elevated temperature

Fe-N thin films were prepared by dc magnetron sputtering at elevated temperature of 80 °C. The residual stress of the thin film was characterized by means of grazing incidence X-ray diffraction method. The effect of magnetron sputtering parameter on residual stress was investigated. The results indicate that the nitrogen content in working gas has great effects on the residual stress in the Fe-N thin film, and the residual stress increases firstly and then decreases with the increasing of nitrogen content in working gas. Curie temperature measurement shows that tensile residual stress enhances the ferromagnetic-paramagnetic transition temperature of Fe-N thin films under the condition of same phase composition.     

Study of Ti addition in channel layers for In-Zn-O thin film transistors

Ti added In-Zn-O thin films and their application to thin film transistors were studied. The In-Zn-O films were deposited by pulsed plasma deposition using targets with various Ti contents added. High content of Ti in In-Zn-O films was found to induce a decrease in carrier concentration. The effect was attributed to suppression of oxygen vacancies by Ti incorporation. For thin film transistors with Ti added In-Zn-O as channel layer materials, threshold voltage showed positive shift as Ti content increases and field effect mobility was not decreased at the same time. Results of a bias stress experiment on device fabricated at room temperature are also given.     

Polymer thin films and surfaces: Possible effects of capillary waves

It is discussed how the proximity of a free surface or mobile interface may affect the strain relaxation behavior in a viscoelastic material, such as a polymer melt. The eigenmodes of a viscoelastic film are thus derived, and applied in an attempt to explain the experimentally observed substantial shift of the glass transition temperature of sufficiently thin polymer films with respect to the bulk. Based on the idea that the polymer freezes due to memory effects in the material, and exploiting results from mode-coupling theory, the experimental findings of several independent groups can be accounted for quantitatively, with the elastic modulus at the glass transition temperature as the only fitting parameter. The model is finally applied discussing the possibility of polymer surface melting. A surface molten layer is predicted to exist, with a thickness diverging as the inverse of the reduced temperature. A simple model of thin polymer film freezing emerges which accounts for all features observed experimentally so far. Received 8 August 2001     

Vacancy formation and strain in low-temperature Cu/Cu(100) growth

The development of compressive strain in metal thin films grown at low temperature has recently been revealed via x-ray diffraction and explained by the assumption that a large number of vacancies were incorporated into the growing films. The results of our molecular dynamics and parallel temperature-accelerated dynamics simulations suggest that the experimentally observed strain arises from an increased nanoscale surface roughness caused by the suppression of thermally activated events at low temperature combined with the effects of shadowing due to off-normal deposition.     

Effect of deposition condition on residual stress of iron nitride thin films prepared by magnetron sputtering and ion implantation

The surface roughness and residual stress development in Fe-N thin films prepared by compound technology—combining magnetron sputtering with plasma based ion implantation were investigated by means of atomic force microscope and synchrotron radiation. The results indicate that the grain size of the thin film increases with the increasing of nitrogen ion implantation time, and the state of residual stress is related closely to the formation mechanism of thin films. With the nitrogen ion implantation time increasing, the residual stress of the thin film changes into tensile stress from initial compressive stress, and the tensile stress decreases with the further increasing of ion implantation time.     

La,V共掺杂的Bi_4Ti_3O_(12)铁电薄膜的溶胶-凝胶法制备及性能测试

采用溶胶-凝胶(sol-gel)工艺在Pt/TiO2/SiO2/p-Si(100)衬底上制备出Bi4Ti3O12(BIT)和Bi3.25La0.75Ti2.97V0.03O12(BLTV)铁电薄膜,研究了La,V共掺杂对BIT薄膜的晶体结构和电学性能的影响.BIT薄膜为c轴择优取向,BLTV薄膜为随机取向,拉曼光谱分析表明V掺杂降低了TiO6(或VO6)八面体的对称性,也增强了Ti—O键(或V—O键)杂化.BLTV薄膜的剩余极化Pr为25.4μC/cm2,远大于BIT薄膜的9.2μC/cm2,表现出良好的铁电性能.疲劳、漏电流测试显示BLTV薄膜具有优良的抗疲劳特性和漏电流特性,表明La,V共掺杂能有效地降低薄膜中的氧空位.     

多晶氧化物薄膜及复合膜系应力模型

基于膜层结构的弛豫现象,建立了一个多晶膜的应力演化模型,并通过线性组合给出了复合膜的生长应力模型。利用双光束基底曲率测量装置实时测量了电子束蒸发氧化铪、氧化硅多晶膜及其复合膜的应力演化过程,并对测量结果进行了拟合分析。     

Residual compressive stress and intensity of infrared absorption of cubic BN films prepared by plasma enhanced chemical vapor deposition

Theoretical and experimental investigations on the dependence of the intensity of infrared （IR） absorption of poly- crystalline cubic boron nitride thin films under the residual compressive stress conditions have been performed. Our results indicate that the intensity of the IR absorption is proportional to the total degree of freedom of all the ions in the ordered regions. The reduction of interstitial Ar atom concentration, which causes the increase in the ordered regions of cubic boron nitride （cBN） crystallites, could be one cause for the increase in the intensity of IR absorption after residual compressive stress relaxation. Theoretical derivation is in good agreement with the experimental results concerning the IR absorption intensity and the Ar interstitial atom concentration in cubic boron nitride films measured by energy dispersion X-ray spec- troscopy. Our results also suggest that the interstitial Ar is the origin of residual compressive stress accumulation in plasma enhanced cBN film deposition.     

Viscoelastic dewetting of a polymer film on a liquid substrate

The Dewetting of thin polymer films (60–300 nm) on a non-wettable liquid substrate has been studied in the vicinity of their glass transition temperature. In our experiment, we observe a global contraction of the film while its thickness remains uniform. We show that, in this case, the strain corresponds to simple extension, and we verify that it is linear with the stress applied by the surface tension. This allows direct measurement of the stress/strain response as a function of time, and thus permits the measurement of an effective compliance of the thin films. It is, however, difficult to obtain a complete viscoelastic characterization, as the short time response is highly dependant on the physical age of the sample. Experimental results underline the effects of residual stress and friction when dewetting is analyzed on rigid substrates.     

Mobility in thin polymer films ranging from local segmental motion, Rouse modes to whole chain motion: A coupling model consideration

Large increases of mobility of local segmental relaxation observed in polymer films as the film thickness is decreased, as evidenced by decreases of the glass temperature, are not found for relaxation mechanisms that have longer length scales including the Rouse relaxation modes and the diffusion of entire polymer chains. We show that the coupling model predictions, when extended to consider polymer thin films, are consistent with a large increase of the mobility of the local segmental motions and the lack of such a change for the Rouse modes and the diffusion of entire polymer chains. There are two effects that can reduce the coupling parameter of the local segmental relaxation in thin films. One is the chain orientation that is induced parallel to the surface when the film thickness h becomes smaller than the end-to-end distance of the chains and the other is a finite-size effect when h is no longer large compared to the cooperative length scale. Extremely thin ( ≈ 1.5 nm) films obtained by intercalating a polymer into layered silicates have thickness significantly less than the cooperative length scale near the bulk polymer glass transition temperature. As a result, the coupling parameter of the local segmental relaxation in such thin films is reduced almost to zero. With this plausible assumption, we show the coupling model can explain quantitatively the large decrease of the local segmental relaxation time found experimentally. Received 1 August 2001 and Received in final form 1 December 2001     

Thickness effect on stress,structural, electrical and sensing properties of (0 0 2) preferentially oriented undoped ZnO thin films

Preferentially oriented (0 0 2) ZnO thin films with c-axis-oriented wurtzite structure have been grown on Si (1 0 0) and glass substrates using radio frequency magnetron sputtering. The residual stresses have been determined and calculated via the Stoney formalism. The ZnO thin films have been also characterised by X-ray diffraction and scanning electron microscope, and their stoichiometry was verified by Rutherford backscattering spectroscopy. The evolution of the residual stress was studied as a function of film thickness in the 10–1200 nm range. A growth scenario is proposed and a possible correlation between the residual stress, film’s texture and crystallographic orientation is highlighted. The crystalline quality was found to improve, while the stress values decreased with increasing thickness, and as a ramification the thicker films developed better sensing response to gases. The mechanical (stress) and electrical properties of the films were also investigated as a function of the film thickness, which tended to manifestly improve in dependence on thickness as well. We attribute this to the fact that the thinner films are under vehement misfit stress that declines with increasing the film thickness further.     

Ferromagnetism in carbon-doped In2O3 thin films

Carbon-doped In₂O₃ thin films exhibiting ferromagnetism at room temperature were prepared on Si (100) substrates by the rf-magnetron co-sputtering technique. The effects of carbon concentration as well as oxygen atmosphere on the ferromagnetic property of the thin films were investigated. The saturated magnetizations of thin films varied from 1.23 to 4.86 emu/cm³ with different carbon concentrations. The ferromagnetic signal was found stronger in samples with higher oxygen vacancy concentrations. In addition, deposition temperature and different types of substrates also affect the ferromagnetic properties of carbon-doped In₂O₃ thin films. This may be related to the oxygen vacancies in the thin film system. The experiment suggests that oxygen vacancies play an important role in introducing ferromagnetism in thin films.     

Transformation behavior of Ni-Mn-Ga/Si(100) thin film composites with different film thicknesses

A series of Ni_51.4Mn_28.3Ga_20.3/Si(100) thin film composites with different film thicknesses varying from 0.1 to 5 μm have been prepared by magnetron sputtering and subsequently annealed. X-ray powder diffraction patterns of the films show the features associated with the lattice-modulated martensitic phase and/or cubic austenite at room temperature. 220-fiber texture was confirmed by the X-rays measurements made at 150 °C. While the Curie temperature is almost film thickness independent, the martensitic transformation temperature shows a strong descended dependence in the submicron range. The substrate curvature measurements demonstrate that the forward and reverse martensitic transformation in the films is accompanied by the reversible relaxation and accumulation of residual stress, originally created by the thermal treatment due to the difference in thermal expansion of the film and substrate. The values of residual stresses measured by both substrate curvature and X-rays diffraction methods at constant temperatures are found to be dependent on the film thickness. This behavior appears in correlation with the thickness dependence of the transformation temperature.     

Be薄膜应力的X射线掠入射侧倾法分析

由于铍薄膜极易被X射线穿透, 传统的几何模式下很难获得有效的X射线衍射应力分析结果. 本文采用掠入射侧倾法分析SiO₂基底上Be薄膜残余应力, 相比其他衍射几何方法, 提高了衍射的信噪比, 获得的薄膜应力拟合曲线线形较好. 对Be薄膜的不同晶面分析, 残余应力结果相同, 表明其力学性质各向同性; 利用不同掠入射角下X射线的穿透深度不同, 获得应力在深度方向上的分布; 由薄膜面内不同方向的残余应力相同, 确定薄膜处于等双轴应力状态. 关键词： Be薄膜 X射线衍射 应力     

High pyroelectric Ba0.65Sr0.35TiO3 thin films with Ba0.65Sr0.35RuO3 seeding-layer for monolithic ferroelectric bolometer

Ba_0.65Sr_0.35TiO₃ (BST) thin films were deposited by RF sputtering with a very thin Ba_0.65Sr_0.35RuO₃ (BSR) seeding-layer on Pt/Ti/SiO₂/Si substrate. The crystallization of BST thin films and the surface morphology of BSR seeding-layer were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. XRD patterns show that the BSR seeding-layer affected the orientation of BST thin film, which is highly a-axis textured. It was also found that the BSR seeding-layer had a marked influence on the dielectric properties of BST thin films. Comparing with BST thin films directly deposited on Pt electrode, the dielectric relaxation can be suppressed and dielectric constant increased due to a possible reduction of interface oxygen vacancies at BST/BSR interface. Moreover, J–V measurement indicates that the leakage current density of BST thin films on BSR seeding-layer were greatly reduced compared with that of BST thin films directly on Pt electrodes. The pyroelectric coefficient of BST thin films with BSR seeding-layer is 7.57 × 10⁻⁷ C cm⁻² K⁻¹ at 6 V/μm at room temperature (RT). Our results reveal that high pyroelectric property of BST thin film could be achievable using BSR seeding-layer as a special buffer.     

Formation and thickness evolution of periodic twin domains in manganite films grown on SrTiO3(001) substrates

We present an extended synchrotron x-ray scattering study of the structure of thin manganite films grown on SrTiO3(001) substrates and reveal a new kind of misfit strain relaxation process which exploits twinning to adjust lattice mismatch. We show that this relaxation mechanism emerges in thin films as one-dimensional twinning waves which freeze out into a twin domain pattern as the manganite film continues to grow. A quantitative microscopic model which uses a matrix formalism is able to reproduce all x-ray features and provides a detailed insight into this novel relaxation mechanism. We further demonstrate how this twin angle pattern affects the transport properties in these functional films.