四角锥氧化锌的制备及其强蓝光发射性质研究

采用热蒸发锌(Zn)粉的方法制备了大量的ZnO纳米棒状和四角锥状结构。用扫描电子显微镜(SEM)、拉曼光谱(Raman Spectra)和光致发光谱(PL)对样品进行了形貌,结构和发光特性分析。结果表明:合成的ZnO纳米棒具有良好的晶体结构,直径约100～500 nm,长度约2～5μm,还有一些四角锥状结构。在325 nm波长光激发下,有微弱的391 nm带边紫外发射和很强的488 nm蓝光发射,呈现出纳米ZnO优异的蓝光特性,并对其生长机理和发光机理进行了初步的探讨。     

六角锥状ZnO纳米结构的生长机理、结构及光学性能(英文)

利用醋酸锌[Zn(CH3COO)2·2H2O]和六次甲基四胺(C6H12N4)以一定比例配置成反应溶液,通过水热合成法制备了六角锥状ZnO纳米结构。同时,使用了扫描电子显微镜(SEM)、X射线衍射和选区电子衍射(SAED),对样品的形貌与结构进行了分析。结果表明,样品形貌成六角锥状结构,并且在[002]方向择优生长。通过对样品的光学性能测试,由PL光谱分析可知,样品在379nm处有一个较强的紫外发光峰,并且在可见光区域产生了一些较弱的可见光发射峰,表明制备的六角锥状ZnO纳米结构的晶体质量不是很好。除此之外,对六角锥状ZnO的生长机理也进行了讨论。     

ZnO纳米花的制备及其性能

利用化学气相沉积法, 在铜箔上成功制备出形似自然界中刺球花的ZnO纳米花结构. 实验进一步研究了氧气和氩气流量比例分别为1:150, 1:200, 1:250和1:400时对ZnO纳米花结构和性能的影响. 结果表明, ZnO纳米花上的ZnO纳米棒的长径比随氧气氛的减少而减小; 在氧气和氩气流量比例为1:250时制备出的ZnO纳米花尺寸均匀、形貌均一、花型结构最完美. ZnO 纳米花的室温光致发光谱表明, 随着氧气氛的减少, 可见区域的发光从一个波包变成一个宽峰, 且与锌空位相关的缺陷发光峰在减弱, 与氧空位相关的缺陷发光峰在增强. 基于实验结果, 提出了一种在铜箔上制备ZnO纳米花结构的生长模型.     

氧氩比对纳米ZnO薄膜蓝光发射光谱的影响

利用射频磁控溅射方法,在石英表面上制备了具有良好的c轴取向的纳米ZnO薄膜。室温下,在300 nm激发下,在450 nm附近观测到ZnO薄膜的蓝光发射谱(430~460 nm)。分析了气氛中氧气与氩气比对薄膜质量及蓝光发射光谱的影响,给出了纳米ZnO薄膜光致发光谱(PL)的积分强度和峰值强度与氧氩比关系。探讨了纳米ZnO薄膜的蓝光光谱的发射机制,初步证实了ZnO蓝光发射(2.88~2.69 eV)来自氧空位(VO)形成的浅施主能级上的电子至价带顶的跃迁。     

有序ZnO纳米阵列的制备及其光学特性

纳米球刻蚀技术和磁控溅射方法在普通玻璃衬底上制备有序氧化锌(ZnO)纳米阵列。利用扫描电子显微镜对样品表面形貌进行了观测,并对样品进行荧光(PL)光谱测试。结果表明,相比于普通ZnO薄膜,ZnO纳米阵列的有序结构可以提高在紫外区域的发光性能,减少蓝绿光的发射缺陷。研究了不同ZnO纳米阵列粒径大小和不同ZnO纳米阵列的厚度对其光学性质的影响。溅射时间30min的有序ZnO纳米阵列样品的质量和结晶状态较好,随着聚苯乙烯(PS)纳米球粒径的减小,样品吸收峰和荧光光谱均发生"蓝移"。     

Sn掺杂ZnO纳米晶的水热法制备及光学性能

以ZnCl2和NaOH为原料,用SnCl4·4H2O作掺杂剂,通过水热法合成了Sn掺杂ZnO纳米颗粒。利用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、紫外-可见吸收光谱(UV-Vis)及光致发光(PL)光谱等测试技术对样品的物相、形貌及光学性能进行了表征。结果表明:制得的Sn掺杂ZnO纳米粒子具有六角纤锌矿结构。随着锡掺杂浓度的增大,纳米晶的平均粒度增加,晶体形貌由短棒状向单锥和双锥状转变;提高前驱液的pH值,所得样品的形貌由长柱状向短柱状转变。室温下,观测到三个光致发光带,一个峰值在433nm处的强紫光发射峰,一个约在401nm处的近紫外发光峰及一个在466nm处的弱蓝光发光峰。在实验掺杂浓度范围内,Sn的掺杂只是改变纳米ZnO的发光强度,对发光峰位置影响不大。     

花状的氧化锌纳米结构的制备及其光学性能

以氢氧化钠和六水合硝酸锌为反应物,在未使用任何表面活性剂的简单反应体系中制得了玫瑰花状ZnO纳米结构,采用X射线衍射(XRD)、扫描电子显微镜(SEM)和室温荧光光谱对产物的晶体结构、形貌和发光性质进行了表征和分析.测试结果表明,所得产物为六方纤锌矿结构ZnO纳米材料,产物结晶完整,尺寸较均匀.这种简单水热法制备的ZnO纳米材料仅在384nm处具有一个较强的紫外发光峰,而在黄绿区几乎没有发光峰,进一步证明了所得样品结晶良好,没有缺陷和空位.以上结果表明所制备的氧化锌纳米材料具有优异的紫外光发射能力.     

氧化锌/硅纳米孔柱阵列的结构和光致发光特性研究

以硅纳米孔柱阵列(Si-NPA)为衬底、用化学气相沉积法制备了具有规则阵列结构特征的ZnO/Si-NPA纳米复合体系，并对其结构和光致发光性质进行了表征. 实验结果显示，组成ZnO/Si-NPA表面阵列的每个柱子均呈现层壳结构. 不同于衬底Si-NPA的红光和蓝光发射，ZnO/Si-NPA在紫外光区和蓝绿光区呈现出两个强的宽发光峰. 分析表明，紫外光发射应归因于ZnO晶体的带边激子跃迁；而蓝绿光发射则来自于ZnO晶体本征缺陷所形成的两类深能级复合中心上载流子的辐射跃迁.     

Er^(3+)掺杂对ZnO/GaN发光二极管电致发光性能的调控EI北大核心CSCD

采用水热法制备了Er^(3+)掺杂的ZnO纳米棒阵列,通过场发射扫描电镜、X单晶衍射谱仪、透射电镜、微区显微光谱仪等对其形貌结构和发光性能进行了表征。结果表明,掺杂前后ZnO纳米棒的形貌及晶型结构未发生改变,Er^(3+)被均匀地掺杂至ZnO纳米棒中,并未发现形成Er_(2)O_(3);掺杂Er^(3+)后样品的光致发光光谱显示400 nm左右蓝光部分占比先提高后减少,其可见光占比减少归因于Er^(3+)填补了一部分锌空位缺陷,同时抑制了一部分氧空位缺陷。结合荧光寿命光谱分析也可发现其辐射发光部分寿命延长,表明荧光辐射效率提高。最终选取掺杂浓度为30%的单根ZnO纳米棒制备ZnO/GaN异质结发光二极管,与未掺杂Er^(3+)的样品相比,其电致发光强度提高了5倍。本研究可为ZnO基电致发光器件的性能改善提供一种简便可行的方法。     

Ga掺杂对ZnO纳米结构可见光发射的抑制效应

采用碳热还原反应和原位掺杂的方法制备了不同Ga掺杂浓度的ZnO纳米结构. X射线衍射 显示掺杂纳米结构中为单一的氧化锌纤锌矿结构. 扫描电子显微镜 观测发现随掺杂浓度的增大, 纳米结构的形貌逐渐从纳米六棱柱变为纳米锥.光致发光 和X射线光电子能谱 测量分别发现随着掺杂浓度升高, 纳米结构的可见发光强度和其中空位 氧峰相对强度逐渐减小直至消失, 两者存在很强的相关性. 上述结果为ZnO可见光发射的氧空位机理提供了新的实验证据. 对Ga掺杂抑制纳米结构中氧空位的原因进行了分析.     

氧化锌及纳米氧化锌研究进展

ZnO是一种重要的直接宽带隙半导体,室温下禁带宽度为3.37eV,激子束缚能为60meV,对于开发蓝绿、蓝光、紫外等多种发光器件有巨大潜力.纳米ZnO表现出与体材料明显不同的电学、磁学、光学、化学等性质,是目前纳米材料的研究热点之一.本文介绍了ZnO和纳米ZnO的一些基本性质,综述了近年来纳米ZnO的合成以及应用等方面研究的一些进展.     

Effect of zinc sources on the morphology of ZnO nanostructures and their photoluminescence properties

The morphology and photoluminescence properties of ZnO nanostructures synthesized from deferent zinc sources by a vapor deposition process were investigated. The zinc sources involved pure zinc, ZnO, and ZnCO₃ powders, respectively. It was found that the zinc sources have a strong effect on the morphology of the ZnO nanostructures. For the pure zinc and ZnO sources, uniform ZnO nanowires and tetrapods are obtained, respectively. However, in the case of the ZnCO₃ source, the products are nanowire–tetrapod combined nanostructures, in which ZnO nanowires grow from the ends of tetrapod arms. The morphology differences of these products may be mainly concerned with the yield and constituents of the corresponding zinc vapor. Photoluminescence measurements show that the nanowires have a relatively stronger near-band UV emission than the other products. The strongest green-light emission from the tetrapods implies that more defects exist in the tetrapods. An evident peak at 430 nm is found in the spectrum of the nanowire–tetrapod combined nanostructures, which may be caused by oxygen-depletion interface traps. PACS 73.61.Tm; 81.10.Bk; 78.55.Et     

射频磁控溅射法制备ZnO薄膜的发光特性

利用射频磁控溅射法在硅衬底上制备出具有（002）择优取向的氧化锌薄膜，用波长为300nm的光激发，观察到在446nm处有一强的光致发光峰，它来自于氧空位浅施主能级上的电子到价带上的跃迁。并讨论了发光峰与氧压的关系以及退火对它的影响，且给出了解释。     

纳米晶ZnO可见发射机制的研究

利用化学沉淀法制备了纳米ZnO粉体,室温下测量了样品的光致发光谱(PL)、X射线衍射谱(XRD),给出了样品的透射电子显微照片(TEM).X射线衍射(XRD)的结果表明:纳米晶ZnO具有六角纤锌矿晶体结构,颗粒呈球形或椭球形.观察到二个荧光发射带,中心波长分别位于398 nm的紫带和510 nm的绿光带.发现随退火温度升高,粒径增大,紫带的峰值减弱、绿带的峰值增强.证实了纳米晶ZnO绿光可见发射带来自氧空位形成的施主和锌空位形成的受主之间的复合.     

Co，Cu共掺杂ZnO薄膜的结构及发光特性

采用电子束蒸发沉积成膜工艺在单晶Si(111)衬底上制备出Co,Cu共掺杂的Zn0.85-xCo0.15CuxO(x=0,0.04,0.06)多晶膜。采用X射线衍射(XRD)研究了Co、Cu掺杂对其微结构的影响;室温下测量了Zn0.85-xCo0.15CuxO薄膜的光致发光谱,发现随着Cu掺杂量的增加,样品发光增强,当Cu掺杂x=0.06时,Zn0.85-xCo0.15CuxO薄膜的PL谱中出现了较强的双峰蓝光发射;分析了掺杂含量对其发光性能的影响,并对样品的发光机制进行了探讨,并推断出蓝光峰来源于电子由导带底到锌空位(VZn)能级的跃迁及锌填隙(Zni)能级到价带顶的跃迁。     

Quasi One-dimensional ZnO Nanostructures Fabricated without Catalyst at Lower Temperature

One- or quasi one-dimensional zinc oxide nanostructures possess plenty of morphologies. Only by controlling the gas flow rates, and partial pressures of argon, oxygen and zinc vapor, can various types of high-quality ZnO nanomaterials (such as wires, belts, arrays, saws or combs, tetraleg rods, nails, and pins) be synthesized through pure zinc powder evaporation without a catalyst at the temperature range of 600–700°C. In this study, deposited nanostructures were characterized by means of scanning electron microscopy, X-ray diffraction and high-resolution transmission electron microscopy. The authors propose and discuss the growth mechanisms of various ZnO. In addition, properties of room temperature photoluminescence and field emission of several typical ZnO nanostructures are measured and investigated.     

Effect of source temperature on the morphology and photoluminescence properties of ZnO nanostructures

ZnO nanostructures have been synthesized by heating a mixture of ZnO/graphite powders using the thermal evaporation and vapor transport on Si(1 0 0) substrates without any catalyst and at atmospheric argon pressure. The influence of the source temperature on the morphology and luminescence properties of ZnO nanostructures has been investigated. ZnO nanowires, nanoflowres and nanotetrapods have been formed upon the Si(1 0 0) substrates at different source temperatures ranging from 1100 to 1200 °C. Room temperature photoluminescence (PL) spectra showed increase green emission intensity as the source temperature was decreased and ZnO nanowires had the strongest intensity of UV emission compared with other nanostructures. In addition, the growth mechanism of the ZnO nanostructures is discussed based on the reaction conditions.     

In situ characterization of optoelectronic nanostructures and nanodevices

One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.     

In situ characterization of optoelectronic nanostructures and nanodevices

One-dimensional (1-D) semiconductor nanostructures can effectively transport electrons and photons, and are considered to be promising building blocks for future optoelectronic nanodevices. In this review, we present our recent efforts to integrate optical techniques and in situ electron microscopy for comprehensively characterizing individual 1-D optoelectronic nanostructures and nanodevices. The technical strategies and their applications in “green” emission and optical confinement in 1-D ZnO nanostructures will be introduced. We also show in situ assembly and characterization of nanostructures for optoelectronic device purposes. Using these examples, we demonstrate that the combination of optical techniques and in situ electron microscopy can be powerful for the studies of optoelectronic nanomaterials and nanodevices.