氧流量对热蒸发CVD法生长β-Ga2O3纳米材料的结构及发光特性的影响

用热蒸发CVD法制备了β-Ga2O3纳米材料, 并用光致发光(PL)方法研究了其发光特性.X射线衍射分析显示, 产物为单斜结构的β-Ga2O3.扫描电子显微镜测试表明:在较小氧流量条件下制备的产物为β-Ga2O3纳米带, 宽度小于100nm, 长度有几微米; 较大氧流量时制备出β-Ga2O3纳米晶粒结构, 晶粒尺度在80-156nm.PL的测试表明: β-Ga2O3纳米结构在波长516nm处有很强的绿色发光带, 且随着氧流量的逐渐增加发光强度逐渐减弱.在氧气氛中900℃退火2h处理后, 发光强度减弱, 进一步证实氧空位缺陷是β-Ga2O3纳米材料发光的主要因素.     

Zn1-xMgxO薄膜的光致发光特性研究

采用脉冲激光沉积方法在单晶Si(100)衬底上制备出c轴取向的Zn1-xMgxO单晶薄膜,通过荧光光谱仪研究了薄膜的光致发光特性.实验结果表明,Mg含量增加,Zn1-xMgxO单晶薄膜的紫外发光峰蓝移,发光峰强度减弱,缺陷发光强度增强.同时发现,由于Mg的掺杂,引入了一些束缚能较大的局域束缚态.对于氧气氛下制备的样品,实验发现紫外峰和绿光带发光峰同时增强,但是R值减小,紫外峰红移.对绿光发光机理研究发现,绿光发光带主要与锌空位、氧间隙(Oi)或锌位氧(OZn)等缺陷有关,它是由多个缺陷发光峰组成,各缺陷发光峰强度相对变化导致了绿光发光带的整体移动.     

具有四角锥状纳米ZnO的制备及强蓝光发射特性

采用热蒸发锌(Zn)粉的方法在不同的氩气流量下制备了大量的四角锥状ZnO纳米材料。用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和光致发光(PL)谱对样品进行了形貌和发光特性分析。结果表明:合成的ZnO纳米材料受氩气流量影响较大,随着流量的增大,形貌由杂乱无章的结构(线状、块状、树枝状等)变成了均匀一致的四角锥结构,其发光特性随着生长过程中氧相对含量的减少,紫外光发射减弱、蓝光发射明显增强,说明氧空位是引起蓝绿光发射的主要原因。经700℃在空气中氧化处理后蓝绿光消失和氧化后的样品在700℃再经氢气还原处理后蓝绿光又重新出现的实验结果进一步证实了这个结论。本实验结果提供了支持纳米ZnO蓝光发射来自氧空位的实验证据,并初步探讨了四角锥状ZnO纳米结构的生长机理和强蓝光发射机制。     

退火温度及退火气氛对ZnO薄膜的结构及发光性能的影响(英文)

采用脉冲激光沉积技术在Si/蓝宝石衬底上制备了ZnO薄膜,结合快速退火设备研究了不同退火温度(500~900℃)及退火气氛(N2,O2)对薄膜的结构及其发光性能的影响。并优化条件得到具有最小半峰全宽及最大晶粒尺寸的薄膜。X射线衍射(XRD)结果表明:氮气氛下退火的ZnO薄膜最佳退火温度为900℃;氧气氛下退火的ZnO薄膜最佳退火温度为800℃。红外(IR)光谱中,退火后Zn-O特征振动峰红移,说明在退火过程中,原子重新排布后占据较低能量位置;同样的退火温度下,氮气氛下退火的薄膜质量更优。同步辐射光电子能谱(synchrotron-based XPS)分别表征了未退火及N2,O2下900℃退火的ZnO薄膜,分峰拟合结果表明氧气氛下退火产生更多的氧空位。结构表征结合光致发光(PL)谱表明绿光的发光峰与氧空位有关。     

氧气流量对脉冲激光沉积ZnO薄膜的形貌及光学性质影响

使用脉冲激光沉积(PLD)方法在石英(SiO2)和单晶Si(111)基底上制备了具有高c轴择优取向的ZnO薄膜。测试结果显示:在30～70sccm氧气流量范围内,氧气流量50sccm时制备的ZnO薄膜具有较好的结晶质量、较高的光学透过率(≥80%)、较高的氧含量(～40.71%)、较快的生长速率(～252nm/h)和较好的发光特性:450～580nm附近发射峰最弱,同时～378nm附近的紫外发光峰最强,表明薄膜材料中含有较少的氧空位等缺陷。     

制备工艺对Zn1-xMgxO薄膜结构及光学性能的影响

采用脉冲激光沉积(PLD)方法在单晶Si(100)衬底上沿c轴方向生长单晶Zn1-xMgxO薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、扫描电镜(SEM)和荧光光谱(PL)研究了膜厚、Mg含量、退火温度及氧气氛等制备工艺对Zn1-xMgxO薄膜的结构、形貌和光学性质的影响.实验结果表明,Mg含量x≤0.15时, Zn1-xMgxO保持六角纤锌矿结构,0.25≤x≤0.35时为立方结构,经过600℃退火之后,Zn0.75Mg0.25O转化为六角纤锌矿结构;后续退火有利于晶粒长大,一定的氧气氛也有利于减少晶体缺陷和薄膜的c轴应力,但是过量的氧气容易与Mg元素结合形成MgO,不利于ZnO 六角纤锌矿结构的生长.对Zn0.925Mg0.075O薄膜进行荧光光谱分析,分析结果表明缺陷发光峰主要与锌空位、锌位氧(Ozn)或氧间隙(Oi)等缺陷有关,退火可以使紫外发射峰蓝移.     

水热合成ZnO:Cd纳米棒的微结构及光致发光特性

采用水热法制备了ZnO和不同掺杂浓度的ZnO:Cd纳米棒,通过SEM,XRD、拉曼光谱等的分析,研究了ZnO和ZnO:Cd的微结构并测试分析了其光致发光特性.结果表明,ZnO和ZnO:Cd纳米棒呈六角纤锌矿结构,Cd掺杂使得纳米棒体积更小.由于内部张应力的影响,Cd掺杂使得材料光学带隙减少.当掺杂浓度为2%时,合成的材料光致发光谱中出现了位于2.67 eV处,由导带底和Zn空位(VZn)缺陷能级跃迁造成的蓝光发射峰,并且Cd的掺入使得位于2.90 eV附近的紫光发射峰强度增强,对于研究ZnO蓝紫发光器件具有重要的意义.     

Zn$lt;sub$gt;1-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;Mg$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;O薄膜的光致发光特性研究

采用脉冲激光沉积方法在单晶Si（100）衬底上制备出c轴取向的Zn_1-xMg_xO单晶薄膜,通过荧光光谱仪研究了薄膜的光致发光特性.实验结果表明,Mg含量增加,Zn_1-xMg_xO单晶薄膜的紫外发光峰蓝移,发光峰强度减弱,缺陷发光强度增强.同时发现,由于Mg的掺杂,引入了一些束缚能较大的局域束缚态.对于氧气氛下制备的样品,实验发现紫外峰和绿光带发光峰同时增强,但是R值减小,紫外峰红移.对绿光发光机理研究发现,绿光发光带主要与锌空位、氧间隙（O_i）或锌位氧（O_Zn）等缺陷有关,它是由多个缺陷发光峰组成,各缺陷发光峰强度相对变化导致了绿光发光带的整体移动. 关键词： 1-xMg_xO薄膜')" href="#">Zn_1-xMg_xO薄膜 光致发光 脉冲激光沉积     

花状的氧化锌纳米结构的制备及其光学性能

以氢氧化钠和六水合硝酸锌为反应物,在未使用任何表面活性剂的简单反应体系中制得了玫瑰花状ZnO纳米结构,采用X射线衍射(XRD)、扫描电子显微镜(SEM)和室温荧光光谱对产物的晶体结构、形貌和发光性质进行了表征和分析.测试结果表明,所得产物为六方纤锌矿结构ZnO纳米材料,产物结晶完整,尺寸较均匀.这种简单水热法制备的ZnO纳米材料仅在384nm处具有一个较强的紫外发光峰,而在黄绿区几乎没有发光峰,进一步证明了所得样品结晶良好,没有缺陷和空位.以上结果表明所制备的氧化锌纳米材料具有优异的紫外光发射能力.     

氧气压强对PLD制备MgZnO薄膜光学性质的影响(英文)

使用准分子脉冲激光沉积(PLD)方法在Si(100)基片上制备了高度c轴取向的MgZnO薄膜。分别使用SEM、XRD、XPS、PL谱和吸收谱表征了薄膜的形貌、结构、成分和光学性质。实验发现氧气压强对MgZnO薄膜的结构和光学性质有重要影响。当氧气压强由5 Pa增大到45 Pa时,薄膜的PL谱紫外峰蓝移了86meV,表明氧气压强的增大提高了MgZnO薄膜中Mg的溶解度。在15 Pa氧气压强下制备的薄膜显示了独特、均匀的六角纳米柱状结构,其PL谱展示了优异的发光特性,具有比其他制备条件下超强的紫外发射和微弱的可见发光。500~600 nm范围内的绿光发射,我们讨论其机理可能源于深能级中与氧相关的缺陷。使用PLD得到纳米柱状结构表明:优化制备条件,可望使用PLD制备ZnO纳米阵列的外延衬底;可使用PLD技术开发基于ZnO纳米结构的高效发光器件。     

Synthesis and Characterization of ZnO Nanoflowers Grown on AlN Films by Solution Deposition

ZnO nanoflowers are synthesized on AlN films by solution method. The synthesized nanoflowers are composed of nanorods, which are pyramidal and grow from a central point, thus forming structures that are flower-shaped as a whole. The nanoflowers have two typical morphologies： plate-like and bush-like. The XRD spectrum corresponds to the side planes of the ZnO nanorods made up of the nanoflowers. The micro-Raman spectrum of the ZnO nanoflowers exhibits the E2 （high） mode and the second order multiple-phonon mode. The photoluminescence spectrum of the ZnO nanoflowers exhibits ultraviolet emission centred at 375nm and a broad green emission centred at 526 nm.     

Ga掺杂对ZnO纳米结构可见光发射的抑制效应

采用碳热还原反应和原位掺杂的方法制备了不同Ga掺杂浓度的ZnO纳米结构. X射线衍射 显示掺杂纳米结构中为单一的氧化锌纤锌矿结构. 扫描电子显微镜 观测发现随掺杂浓度的增大, 纳米结构的形貌逐渐从纳米六棱柱变为纳米锥.光致发光 和X射线光电子能谱 测量分别发现随着掺杂浓度升高, 纳米结构的可见发光强度和其中空位 氧峰相对强度逐渐减小直至消失, 两者存在很强的相关性. 上述结果为ZnO可见光发射的氧空位机理提供了新的实验证据. 对Ga掺杂抑制纳米结构中氧空位的原因进行了分析.     

Investigation of Cu Doping,Morphology and Annealing Effects on Structural and Optical Properties of ZnO:Dy Nanostructures

Dysprosium (Dy) doped ZnO nanosheets and nanorods were synthesized by hydrothermal method. Effects of Cu doping, morphology and annealing in Oxygen ambient on structural and optical properties of ZnO nanostructures were investigated using X–ray diffraction (XRD), scanning electron microscopy (SEM), diffuse reflectance spectra (DRS) and photoluminescence (PL) spectroscopy. This study recommends that both of intrinsic and extrinsic defects facilitate energy transfer (ET) from the ZnO host to Dy³⁺ ions and consequently have an effective role on producing intense Dy emissions at indirect excitation. The results also revealed that annealing process improved the crystal structure of ZnO nanorods due to decrease of surface; however decreased ET and Dy emissions because of diminishing in oxygen vacancy. In addition, as a result of increasing of surface area in nanorods compared to nanosheets, the oxygen vacancies and ET were enhanced. Moreover the results exhibited that electrical and optical properties of ZnO:Dy can be tuned by various amount of Dy concentrations and also Cu doping.     

Porous Silicon as an Intermediate Buffer Layer for Zinc Oxide Nanorods

Zinc thin films were deposited onto porous silicon (PSi) substrates by dc sputtering using a Zn target. These films were then annealed under flowing (6 l/min) oxygen gas environment in the furnace at 600°C for 2 h. Porous silicon is used as an intermediate layer between silicon and ZnO films and it provides a large area composed of an array of voids. The PSi samples were prepared using photoelectrochemical method on n-type silicon wafer with (111) and (100) orientation. To prepare porous structures, the samples were dipped into a mixture of HF:ethanol (1:1) for 5 min with current densities of 50 mA/cm², and subjected to external illumination with a 500 W UV lamp. The surface morphology and the nanorod structure of the ZnO films were characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD). We synthesized the ZnO nanorods with diameter of 80–100 nm without any catalysts or templates. The XRD pattern confirmed that the ZnO nanorods were of polycrystalline structure. The surface-related optical properties have been investigated by photoluminescence (PL) and Raman measurements at room temperature. Micro-Raman results showed that A₁(LO) of hexagonal ZnO/Si(111) and ZnO/Si(100) have been observed at 522 cm^–1 and 530 cm^–1, respectively. PL spectra peaks are clearly visible at 366 cm^–1 and 368 cm^–1 for ZnO film grown on porous Si(111) and Si(100) substrates, respectively. The PL spectral peak position in ZnO nanorods on porous silicon is blue-shifted with respect to that in unstrained ZnO (381 nm).     

Controllable vertically aligned ZnO nanorods on flexible polyethylene naphthalate (PEN) substrate using chemical bath deposition synthesis

Zinc oxide (ZnO) nanorods were successfully grown on polyethylene naphthalate substrates with a seed layer using a wet chemical bath deposition method at a low temperature. Using various precursor concentrations, the diameter, length, and density of the ZnO nanorods were controlled, and their optical and crystallinity properties were investigated. X-ray diffraction and field emission scanning electron microscopy were used to examine the structure and morphology of the ZnO nanorods. The obtained ZnO nanorods were hexagonal and grew vertically from the substrate in the (002) direction along the c-axis. The low compressive strain values confirmed the high-quality crystal structure of the synthesized ZnO nanorods. A 0.050 M precursor concentration resulted in nanorods with a uniform diameter along their entire length and diameters ranging from 10 nm to 40 nm. The photoluminescence results indicated that the ZnO nanorods grown using a 0.050 M precursor concentration exhibited the sharpest and most intense PL peaks in the UV range compared with the other samples. Therefore, the precursor concentration considerably influenced the growth of the ZnO nanorods. These ZnO nanorods can be greatly applied for the development of flexible, elastic electronic, and optoelectronic devices.     

Hydrothermal growth of ZnO on annealed electrodeposited titanate film: Influence of zinc nitrate and methenamine

Hydrothermal growth of hexagonal ZnO nanorods on the annealed titanate nanotube films is reported as a function of molar ratio of Zn(NO₃)₂ and methenamine (1:1-1:4). The molar ratio of 1:4 results in a dense and thinner rod in comparison with other molar ratios. Corn-like structures of the rods are believed to be due to the higher amine concentration. Raman peaks at 437 and 331 cm⁻¹ are assigned to E₂ and E_2H-E_2L modes. Near band gap edge and green photoluminescence emission indicates the structural and oxygen vacancy. O 1s peak is found built-up of sub-peaks at 530.62, 531.8 and 532.84 eV corresponding to O²⁻ on normal wurtzite structure and OH and oxygen vacancies of ZnO, respectively.     

Photoluminescence and field emission of 1D ZnO nanorods fabricated by thermal evaporation

Four kinds of new one-dimensional nanostructures, celery-shaped nanorods, needle-shaped nanorods, twist fold-shaped nanorods, and awl-shaped nanorods of ZnO, have been grown on single silicon substrates by an Au catalyst assisted thermal evaporation of ZnO and active carbon powders. The morphology and structure of the prepared nanorods are determined on the basis of field-emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). The photoluminescence spectra (PL) analysis noted that UV emission band is the band-to-band emission peak and the emission bands in the visible range are attributed to the oxygen vacancies, Zn interstitials, or impurities. The field-emission properties of four kinds of ZnO nanorods have been invested and the awl-shaped nanorods of ZnO have preferable characteristics due to the smallest emitter radius on the nanoscale in the tip in comparison with other nanorods. The growth mechanism of the ZnO nanorods can be explained on the basis of the vapor–liquid–solid (VLS) processes.     

Comparative PL study of individual ZnO nanorods,grown by APMOCVD and CBD techniques

The photoluminescence properties of individual ZnO nanorods, grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCV) and chemical bath deposition (CBD) are investigated by means of temperature dependent micro-PL. It was found that the low temperature PL spectra are driven by neutral donor bound exciton emission D⁰X, peaked at 3.359 and 3.363 eV for APMOCVD and CBD ZnO nanorods, respectively. The temperature increase causes a red energy shift of the peaks and enhancement of the free excitonic emission (FX). The FX was found to dominate after 150 K for both samples. It was observed that while APMOCVD ZnO nanorods possess a constant low signal of visible deep level emission with temperature, the ZnO nanorods grown by CBD revealed the thermal activation of deep level emission (DLE) after 130 K. The resulting room temperature DLE was a wide band located at 420–550 nm. The PL properties of individual ZnO nanorods can be of importance for their forthcoming application in future optoelectronics and photonics.     

Enormous enhancement of ZnO nanorod photoluminescence

ZnO nanorod arrays were grown on quartz slices in the aqueous solution of zinc acetate and hexamethylenetetramine at 90 °C. Then ZnO:Mg shells were epitaxially grown on the nanorods to form core/shell structures in the aqueous solution of zinc acetate, magnesium acetate and hexamethylenetetramine at the same temperature. Effects of the shells and UV laser beam irradiation on the crystal structure and photoluminescence properties of ZnO nanorods were studied. ZnO:Mg shells suppress the green emission and enhance the UV emission intensity of the nanorods by 38 times. Enhancement of the UV emission depends on the Mg content in the shells. Short time UV laser beam irradiation could improve ZnO nanorod emission efficiently. The UV emission intensity of ZnO nanorods is enhanced by 71 times by capping and subsequent UV laser beam irradiation.     

两步法制备空间取向高度一致的ZnO纳米棒阵列

采用两步法,即先用磁控溅射在Si(100)表面生长一层ZnO籽晶层、再利用液相法制备空间取向高度一致的ZnO纳米棒阵列.用扫描电子显微镜、X射线衍射、高分辨透射电子显微镜和选区电子衍射对样品形貌和结构特征进行了表征.结果表明,ZnO纳米棒具有垂直于衬底沿c轴择优生长和空间取向高度一致的特性和比较大的长径比,X射线衍射的(XRD)(0002)峰半高宽只有0.06°,选区电子衍射也显示了优异的单晶特性.光致发光谱表明ZnO纳米棒具有非常强的紫外本征发光和非常弱的杂质或缺陷发光特性. 关键词： ZnO纳米棒阵列 ZnO籽晶层 两步法 液相生长