爆电换能脉冲大电流输出研究

 基于爆电换能原理,使用掺铌的PZT 95/5陶瓷组装换能器件,在垂直工作模式下,对爆电电源LRC电路响应进行了理论分析,并开展了脉冲大电流输出实验研究。实验采用多组PZT 95/5铁电陶瓷并联,利用平面波发生器作为冲击加载手段,获得了峰值5 kA以上的脉冲大电流,初始电流上升速率可达10~20 GA/s。实验结果与理论设计符合较好。     

冲击加载下PZT 95/5铁电陶瓷的脉冲大电流输出特性

极化了的PZT 95/5铁电陶瓷在冲击波作用下发生铁电相到反铁电相的结构相变，释放出被束缚的电荷，流经外电路，形成脉冲电流.基于这一原理，针对低感、低阻负载的要求，对PZT 95/5铁电陶瓷 LRC电路响应进行了理论分析，并开展了实验研究.实验采用多组PZT 95/5铁电陶瓷并联，获得了前沿小于500ns，峰值大于5kA的大电流. 关键词： PZT 95/5铁电陶瓷 冲击波 爆电电源     

静电场中多孔PZT95/5铁电陶瓷的通道电-机械击穿模型及分析

作为爆电电源的多孔PZT95/5铁电陶瓷具有极为重要的工程应用背景,但它在强电场作用下易发生电击穿失效,从而影响其放电效率,甚至造成电源失效。基于多孔PZT95/5铁电陶瓷材料在外电场作用下内部形成导电通道以致电失效的机制,通过通道内部局部放电及通道电-机械击穿机理,建立了导电通道诱导的多孔铁电陶瓷的电击穿模型并进行了相关的理论分析。基于本模型,给出了不同孔隙率下铁电陶瓷的电击穿临界电场强度,预测结果与实验测试结果吻合良好,且材料孔隙率越大,内部电击穿通道的特征尺寸越大,导致铁电陶瓷材料的电击穿临界场强显著降低。     

冲击波垂向加载下PZT 95/5铁电陶瓷的去极化和放电过程分析

电极化后的PZT 95/5铁电陶瓷能够在冲击波作用下快速去极化并释放束缚电荷,形成高功率的瞬态输出电能。对于垂直于极化方向的冲击波加载情况,通过将去极化过程中的铁电陶瓷等效为电流源、电容和电导的并联电路,综合考虑冲击波压力对波速和去极化相变过程的影响,以及冲击波前、后铁电陶瓷的介电常数和电导率变化,建立了描述冲击波垂向加载下PZT 95/5铁电陶瓷去极化和放电过程的模型,解析获得了铁电陶瓷的放电电流表述。在此模型基础上,开展了短路和电阻负载条件下PZT 95/5铁电陶瓷在冲击放电过程中的输出电流特征分析,并与相关实验结果进行了对比。结果表明:模型能较好地模拟实验观测的铁电陶瓷PZT 95/5的冲击放电过程,以及冲击波压力、负载电阻等对冲击放电输出电流的影响规律。     

多孔未极化Pb(Zr0.95Ti0.05)O3铁电陶瓷单轴压缩力学响应与相变

通过添加造孔剂的方法制备了四种不同孔隙率未极化PZT95/5铁电陶瓷. 采用非接触式的数字散斑相关性分析(digital image correltation, DIC)全场应变光学测量技术, 对多孔未极化PZT95/5 铁电陶瓷开展了单轴压缩实验研究, 讨论了孔隙率对未极化PZT95/5铁电陶瓷的力学响应与畴变、相变行为的影响. 多孔未极化PZT95/5铁电陶瓷的单轴压缩应力-应变关系呈现出类似于泡沫或蜂窝材料的三阶段变形特征, 其变形机理主要归因于畴变和相变的共同作用, 与微孔洞塌缩过程无关. 多孔未极化PZT95/5铁电陶瓷的弹性模量、压缩强度都随着孔隙率的增加而明显降低, 而孔隙率对断裂应变的影响较小. 预制的微孔洞没有改善未极化PZT95/5铁电陶瓷材料的韧性, 这是因为单轴压缩下未极化PZT95/5铁电陶瓷的断裂机理是轴向劈裂破坏, 微孔洞对劈裂裂纹传播没有起到阻碍和分叉作用. 准静态单轴压缩下多孔未极化PZT95/5铁电陶瓷畴变和相变开始的临界应力都随着孔隙率的增大而呈线性衰减, 但相变开始的临界体积应变却不依赖孔隙率.     

冲击波加载下PZT 95/5铁电陶瓷的电阻率研究

利用炸药爆炸产生的平面冲击波,研究了垂直模式冲击波加载下PbZr_0.95Ti_0.05O₃ (PZT 95/5)铁电陶瓷冲击波压缩区域的电阻率变化.在建立的模型中考虑了冲击波压缩区域的有限电阻率,计算结果表明：在压力约2.0GPa,负载短路的条件下,PZT 95/5铁电陶瓷冲击波压缩区域的电阻率从初始10⁷—10¹¹Ωcm迅速降到最小值约40Ωcm,然后基本保持在120—140Ωcm之间. 关键词： PZT 95/5铁电陶瓷 冲击波 电阻率     

斜入射冲击波加载下PZT95/5铁电陶瓷的放电特性研究

 研究了冲击波倾斜入射PZT95/5铁电陶瓷时的放电特性。结果表明,在小负载条件下,随着入射倾斜角的增加,PZT95/5铁电陶瓷放电电流波形前沿变缓,脉宽时间增加,波形从单脉冲方波演变成梯形波,甚至锐变成三角波。     

极化状态与方向对单轴压缩下Pb(Zr_(0.95)Ti_(0.05))O_3铁电陶瓷畴变与相变行为的影响

利用数字图像相关性分析方法发展了全场应变光学测量技术,并原位实时测量了准静态单轴压缩下铁电PZT95/5陶瓷试件的轴向应变和横向应变.基于轴向应变、横向应变随着轴向应力的变化关系,讨论了极化状态和极化方向对PZT95/5铁电陶瓷的畴变与相变行为的影响.实验结果显示:单轴压缩下,未极化和Z轴极化PZT95/5铁电陶瓷都会发生畴变,而Y轴极化PZT95/5铁电陶瓷则不发生畴变;畴变促使Z轴极化PZT95/5铁电陶瓷的轴向应变和横向应变同时快速地增长,而对未极化PZT95/5铁电陶瓷的应变增长的影响非常微弱,这种差异性归因于电畴极轴不同的取向分布特征;通过应变分解分析,验证了畴变与相变过程是解耦的,并界定了畴变应变和相变应变的影响范围;与Z轴极化PZT95/5铁电陶瓷相比,未极化PZT95/5铁电陶瓷的相变开始临界应力和相变结束应力减小,而Y轴极化PZT95/5铁电陶瓷则明显增大,由此推论畴变对相变有一定促进作用.基于放电特性的实测结果,还讨论了极化方向对极化PZT95/5铁电陶瓷去极化机理的影响.实验结果显示:Z轴极化PZT95/5铁电陶瓷去极化机理是畴变和相变的共同作用,其中畴变占主导地位,而Y轴极化PZT95/5铁电陶瓷的去极化机理仅是相变.     

PZT 95/5铁电陶瓷的冲击压缩Hugoniot特性研究

 采用一级气体炮加载装置,利用加窗VISAR技术,对极化和未极化两种状态的PZT 95/5铁电陶瓷进行了逆向冲击实验,在0.52~3.8 GPa冲击压力范围内,得到了PZT 95/5铁电陶瓷两种状态的σ-u关系。对比文献已有实验数据显示,PZT 95/5铁电陶瓷的Hugoniot曲线与初始密度值密切相关,高密度的PZT 95/5铁电陶瓷在0~3.0 GPa压力范围内的σ-u关系接近线弹性,较低压力下不同极化状态的Hugoniot数据表明,PZT 95/5铁电陶瓷发生了冲击相变。     

冲击波加载下PZT95/5铁电陶瓷电响应的数值模拟

 在爆炸冲击波垂直加载下,考虑了介质的松弛现象及其有限电导率,建立了PZT95/5铁电陶瓷电响应的数学模型。利用这一模型,分析了PZT95/5在短路、电阻、电容和电感等各种负载下的电响应。理论模型与实验结果较好地符合。     

(111)取向生长Pb(Zr0:95Ti0:05)O3纳米晶薄膜的铁电与热释电特性

" 在Pt/Ti/SiO2/Si基片上用溶胶-凝胶法与快速退火工艺制备了300 nm厚的锆钛酸铅Pb(Zr0:95Ti0:05)O3 (PZT95/5)反铁电薄膜．结果显示600~700 ℃晶化处理的钙钛矿PZT95/5薄膜具有高度(111)取向生长特性．薄膜的电性能测量采用金属-铁电-金属电容器结构．在20 V电压作用下,600~700 ℃晶化处理的PZT95/5薄膜显示出饱和电滞回线．在1 kHz下,600、650和700 ℃晶化的薄膜介电常数与损耗分别为519与0.028、677与0.029、987     

A new analytical model of high voltage silicon on insulator （SOI） thin film devices

A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141V/μm at a film thickness of 0.1μm which is much larger than the normal value of about 30V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (V_B,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.     

电极材料及偏压极性对氧化物介质击穿行为的影响及机制

忆阻器和能量存储电容器具有相同的三明治结构,然而两个器件需要的操作电压有明显差异,因此在同一个器件中,研究操作电压的影响因素并对操作电压进行调控,实现器件在不同领域的应用是十分必要的一个工作.本文利用反应磁控溅射技术在ITO导电玻璃、Pt/Si基底上生长了多晶ZrO_2和非晶TaO_x薄膜,选用不同金属材料Au, Ag和Al用作上电极构建了多种金属/氧化物介质/金属三明治结构的电容器,研究了器件在不同偏压极性下的击穿强度.结果发现:底电极是ITO的ZrO_2基电容器在负偏压下的击穿电场比Pt电极器件稍大.不管底电极是ITO还是Pt, Ag作为上电极时器件的击穿强度均存在明显的偏压极性依赖性,正偏压下的击穿电场减小了一个数量级;相反,在Al作为上电极的Al/TaO_x/Pt器件中,正向偏压比负向偏压下的击穿电场增加了近2倍.上述器件的不同击穿行为分别可以由氧化物电极和介质界面层间氧的迁移和重排、电化学活性金属电极的溶解迁移和还原以及化学活性金属电极与氧化物界面的氧化还原反应来解释.该实验结果对有不同操作电压要求的器件,如忆阻器和介质储能电容器等在器件设计和操作方面具有指导意义.     

Au/PZT/BIT/p-Si异质结的制备与性能研究

采用脉冲激光沉积(PLD)工艺,制备了以Bi₄Ti₃O₁₂(BIT)为过渡阻挡层的Au/PZT/BIT/p-Si异质结.研究了BIT铁电层对Pb(Zr_0.52Ti_0.48)O₃(PZT)薄膜晶相结构、铁电及介电性能的影响,对Au/PZT/BIT/p-Si异质结的导电机制进行了讨论.氧气氛530℃淀积的PZT为多晶铁电薄膜,与直接淀积在Si基片上相比,加入BIT铁电层后PZT铁 关键词： 铁电薄膜 异质结构 脉冲激光沉积(PLD)     

铁电体电源中介质电阻特性及对输出电荷的影响

爆炸驱动铁电体脉冲电源利用铁电陶瓷在冲击压力作用下去极化释放电荷而产生电流,可以作为脉冲功率源的初始电源,也可直接驱动高阻抗负载产生脉冲高电压。通常情况下,铁电陶瓷可以看作理想的绝缘体,但在数GPa冲击波压力作用下,铁电陶瓷电阻率可能会明显下降并形成漏电导,使部分去极化释放电荷在铁电陶瓷内部流失,导致铁电陶瓷剩余极化电荷输出效率下降。以PZT95/5铁电陶瓷作为初始储能介质,以爆炸冲击波加载PZT95/5铁电陶瓷释放电荷对脉冲电容器充电,充电结束后电容器电压维持期间检测到明显的反向电流,根据铁电陶瓷输出电流和工作电压,得到冲击波作用过程中铁电陶瓷的瞬态电阻率曲线,并分析了电阻率下降对输出电荷的影响。进一步研究表明,冲击压力在铁电陶瓷边侧产生的稀疏波是引起电荷输出效率降低的主要因素,而铁电陶瓷电阻率下降对电荷输出效率的影响很小。     

Electric and ferroelectric properties of PZT/BLT multilayer films prepared by photochemical metal-organic deposition

The electric and ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-substituted bismuth titanate (BLT) multilayer films prepared using photosensitive precursors were characterized. The electric and ferroelectric properties were investigated by studying the effect of the stacking order of four ferroelectric layers of PZT or BLT in 4-PZT, PZT/2-BLT/PZT, BLT/2-PZT/BLT, and 4-BLT multilayer films. The remnant polarization values of the 4-BLT and BLT/2-PZT/BLT multilayer films were 12 and 17 μC/cm², respectively. Improved ferroelectric properties of the PZT/BLT multilayer films were obtained by using a PZT intermediate layer. The films which contained a BLT layer on the Pt substrate had improved leakage currents of approximately two orders of magnitude and enhanced fatigue resistances compared to the films with a PZT layer on the Pt substrate. These improvements are due to the reduced number of defects and space charges near the Pt electrodes. The PZT/BLT multilayer films prepared by photochemical metal-organic deposition (PMOD) possessed enhanced electric and ferroelectric properties, and allow direct patterning to fabricate micro-patterned systems without dry etching.     

Dielectric properties of multilayered SrTiO3 thin films with graded oxygen vacancy concentration

SrTiO₃ (STO) thin films were homo-epitaxially grown on Nb-doped STO substrates at varying oxygen pressures, and the effect of oxygen vacancy concentration on the dielectric properties of the STO thin films was studied and is presented herein. Although the STO thin films with low oxygen vacancy concentration demonstrated low zero-bias permittivity, low dielectric tunability, and high dielectric dissipation, the STO thin films, however, could withstand a large electric field. While the STO thin films with high oxygen vacancy concentration exhibited reduced dielectric loss and high dielectric tunability, they exhibited a low breakdown electric field. In order to make use of the respective advantages of the STO thin films with different oxygen vacancy concentrations, a trilayered structure was obtained by varying the oxygen pressure during deposition and combining one thin STO layer with large oxygen vacancy concentration sandwiched by two STO thin films with low oxygen vacancy concentration. The microstructure and dielectric properties of the trilayer were then studied. X-ray diffraction analysis indicated that the trilayer was a relaxed STO multilayer formed by two STO thin layers with different lattice parameters. An improved optimization of high tunability and low loss was achieved in the relaxed trilayer. PACS 77.84.Bw; 68.55; 77.22.Ch; 68.35.Ct; 74.80.Dm     

溶胶-凝胶法制备Pb(Zr1?xTix)O3复合梯度薄摸以及介电与热释电特性

"在Pt/Ti/SiO2/Si基片上用溶胶-凝胶法生长制备了PZT(Pb(Zr1-xTix)O3)复合梯度铁电薄膜． 薄膜最终结构由6层组成,"向上"梯度薄膜在Pt底电极上的第一层从PbZrO3开始,顶层是PZT(50/50),即第一层是PbZrO3,第二层PZT90/10 (10%Ti),第三层是PZT80/20,第四层PZT70/30,第五层PZT60/40,第六层PZT50/50．每一层与此相反的是"向下"梯度PZT薄膜．用X射线衍射、俄歇电子能谱和阻抗分析来研究梯度薄膜的结构与介电特性．600     

Influences of thin Ni layer on the electrical and absorption properties of PZT thin film pyroelectric IR sensors

A solid precursor was used to prepare ferroelectric lead zirconate titanate (PZT) 30/70 thin films using the sol–gel deposition method. To apply PZT thin films for uncooled pyroelectric IR sensors, a Ni layer was deposited onto the PZT thin films, serving both as a selective absorption layer and as the top electrode. The absorption properties of such Ni coated multi-layered pyroelectric sensors were studied in the visible and infrared wavelength ranges. The maximum absorption coefficient of this type of IR sensor was measured to be 0.8 at 0.633 μm and 0.7 at 4 μm wavelength, respectively. A striking asymmetric polarization hysteresis loop in these PZT thin films with Ni as the top electrode was observed as a direct consequence. This asymmetric polarization was attributed to cause the difference in the dynamic pyroelectric responses in these Ni/PZT/Pt films, poled either positively or negatively before the measurement.     

Anomalous conductivity in PZT thin film deposited on copper substrate electrode

Electrical properties of ferroelectric films are influenced by factors that include methods of synthesis and characteristics of the substrate electrode. Conductivity measurements were performed on PZT (lead zirconate titanate) thin films deposited by sol–gel synthesis on a copper electrode to investigate electric properties and isolate the principal charge carriers. A semiconducting PZT/Cu interface appears during thermal treatment, significantly influencing electric conduction. A power law, describing the transport mechanism across the PZT film, was found empirically.