| 溶胶-凝胶法制备Pb(Zr1?xTix)O3复合梯度薄摸以及介电与热释电特性 |
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| 引用本文： | 唐新桂,蒋力立,匡淑娟,丁爱丽,陈王丽华.溶胶-凝胶法制备Pb(Zr1?xTix)O3复合梯度薄摸以及介电与热释电特性[J].化学物理学报,2007,20(6):665-669. |
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| 作者姓名： | 唐新桂 蒋力立 匡淑娟 丁爱丽 陈王丽华 |
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| 作者单位： | 广东工业大学物理与光电工程学院，广州510006,广东工业大学实验教学中心，广州510006,广东工业大学物理与光电工程学院，广州510006,中国科学院上海硅酸盐研究所，上海200050,香港理工大学应用物理系，九龙 |
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| 摘 要： | "在Pt/Ti/SiO2/Si基片上用溶胶-凝胶法生长制备了PZT(Pb(Zr1-xTix)O3)复合梯度铁电薄膜． 薄膜最终结构由6层组成，"向上""梯度薄膜在Pt底电极上的第一层从PbZrO3开始，顶层是PZT(50/50)，即第一层是PbZrO3，第二层PZT90/10 (10%Ti)，第三层是PZT80/20，第四层PZT70/30，第五层PZT60/40，第六层PZT50/50．每一层与此相反的是"向下""梯度PZT薄膜．用X射线衍射、俄歇电子能谱和阻抗分析来研究梯度薄膜的结构与介电特性．600
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| 关 键 词： | 梯度薄摸，Pb(Zr Ti)O3，介电特性，热释电特性 |
| 收稿时间： | 2007/7/30 0:00:00 |
| 修稿时间： | 8/2/2007 12:00:00 AM |
Dielectric and Pyroelectric Properties of Compositionally Graded Pb(Zr1-xTix)O3 Thin Films Prepared by Sol-gel Process |
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| Xin-gui Tang,Li-li Jiang,Shu-juan Kuang,Ai-li Ding and H. L. W. Chan.Dielectric and Pyroelectric Properties of Compositionally Graded Pb(Zr1-xTix)O3 Thin Films Prepared by Sol-gel Process[J].Chinese Journal of Chemical Physics,2007,20(6):665-669. |
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| Authors: | Xin-gui Tang Li-li Jiang Shu-juan Kuang Ai-li Ding and H L W Chan |
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| Institution: | School of Physics and Optoelectric Engineering, Guangdong University of Technology, GuangzhouHigher Education Mega Center, Guangzhou 510006, China,Laboratory Teaching Center, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China,School of Physics and Optoelectric Engineering, Guangdong University of Technology, GuangzhouHigher Education Mega Center, Guangzhou 510006, China,Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China,Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China |
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| Abstract: | "Compositionally graded ferroelectric lead zirconate titanate Pb(Zr1-xTix)O3 (PZT) thin films were grown on Pt/Ti/SiO2/Si substrates by using a sol-gel process. The final structure consists of six layers, up-graded graded films starting from PbZrO3 on the Pt electrode to the top PZT(50) layer, it consists of no Ti, 10%Ti, 20%Ti, 30%Ti, 40%Ti, and 50%Ti respectively. Whereas films with opposite gradient are called down-graded graded films. Structure and dielectric properties of the graded films was investigated by X-ray diffraction, Auger electron spectroscopy and by impedance analysis. The up-graded and down-graded PZT films annealed at 600 o, exhibited the remanent polarization values of 18.0 and 24.2 1C/cm2, respectively. The typical small signal dielectric constants and loss tanffi at a frequency of 100 Hz were 523 and 0.018, 544, and 0.020, respectively, for up-graded and down-graded PZT thin films. The temperature dependence of pyroelectric coeoients of the graded PZT films was measured by a dynamic technique. From 20 o to 82 o, the pyroelectric coeoients of the up-graded and down-graded PZT films up to 374 and 407 1C/m2K, respectively." |
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| Keywords: | Graded films Pb(Zr Ti)O3 Dielectric properties Pyroelectric properties |
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