CoFe2O4纳米颗粒的结构、磁性以及离子迁移

聚乙烯醇(PVA)溶胶凝胶法制备出CoFe2O4纳米微粉,用X 射线衍射研究了铁氧体纳米颗粒的结构.测量了CoFe2O4纳米颗粒80-873 K的变温穆斯堡尔谱,发现纳米颗粒的磁转变温度范围为793-813 K,比块体材料的磁性转变温度要低.CoFe2O4纳米颗粒的德拜温度θA=674 K,θB=243 K,比块体材料要小.CoFe2O4纳米颗粒超精细场Hf随温度的变化符合T3/2+T5/2定理.当温度较高时,平均同质异能移IS随温度的升高而减小,并呈线性关系.     

H2O2氧化法制备Fe3O4纳米颗粒及与共沉淀法制备该样品的比较

在近中性条件下，利用H₂Ｏ₂氧化Fe(OH)2胶体成功制备了Fe₃ Ｏ₄纳米颗粒.分别利用透射电镜(TEM)，x射线衍射仪(XRD)，振动样品磁强计(VSM)和超导量子干涉仪（SQUI D）对样品的形貌，结构，宏观磁性进行了表征和测量.TEM图像表明样品为球形颗粒，直径 大小约18nm，且分布较均匀.XRD结果表明样品为立方尖晶石结构.穆斯堡尔谱测量表明样品 室温下对应两套六线谱，样品的晶体结构存在缺陷，内磁场略小于块体Fe₃Ｏ4的值. 宏观磁测量表明样品的饱和磁化强度可达67×10^-3A·m²/g，在20 K出现了Verw ey转变.选择该法制备的Fe₃Ｏ₄纳米颗粒与共沉淀法得到的样品作 了磁性比较.宏观磁 测量表明共沉淀法制备的样品在外磁场为1T时仍未饱和，磁化强度仅为46×10^-3A·m²/g，在178K出现了超顺磁转变温度，且在测量温度范围内没有发现Verwe y转变. 关键词： 亚铁磁 超顺磁 穆斯堡尔谱     

尖晶石铁氧体TixNi1-xFe2O4中阳离子分布和Ti离子磁矩的实验研究

采用固相反应法制备了系列样品Ti_xNi_1-xFe₂O₄ (x=0.0, 0.1, 0.2, 0.3, 0.4). 室温下的X射线衍射谱表明样品全部为(A)[B]₂O₄型单相立方尖晶石结构, 属于空间群Fd3m. 样品的晶格常数随Ti掺杂量的增加而增大. 样品在10 K温度下的比饱和磁化强度σ_S随着Ti掺杂量x的增加逐渐减小. 研究发现, 当Ti掺杂量x≥ 0.2时, 磁化强度σ随温度T的变化曲线出现两个转变温度T_L和T_N. 当温度低于T_N时, 磁化强度明显减小; 当温度达到T_N时, dσ/dT具有最大值. σ-T曲线的这些特征表明, 由于Ti掺杂在样品中出现了附加的反铁磁结构. 这说明样品中的Ti离子不是无磁性的+4价离子, 而是以+2和+3价态存在, 其离子磁矩的方向与Fe和Ni离子的磁矩方向相反. 利用本课题组提出的量子力学方势垒模型拟合样品在10 K温度下的磁矩, 得到了Ti, Fe和Ni三种阳离子在(A)位和[B]位的分布情况, 并发现在所有掺杂样品中, 80%的Ti离子以+2价态占据尖晶石结构的[B]位.     

界面活性剂对Fe3O4磁性与穆斯堡尔谱的影响

测量了不同颗粒尺寸Fe₃O₄覆盖界面活性剂前后磁性、红外谱以及穆斯堡尔谱。实验结果表明界面活性剂与Fe₃O₄微粒表面为化学吸附,覆盖界面活性剂后在相同磁场下磁化强度有所下降,穆斯堡尔谱变得弥散,随着颗粒尺寸变小,穆斯堡尔谱内场减小,谱线变得更为弥散,实验结果可以用表面各向异性的理论进行解释。 关键词：     

Dy3Al5O12磁热性质研究

用量子理论计算了Dy₃Al₅O₁₂的晶场能谱、Zeeman劈裂能级和波函数. 在外磁场H_e为0<H_e<9 T, 温度为3<T<42 K 范围内, 计算了该晶体的磁矩、磁熵变, 计算结果与相关实验数据吻合较好. 该计算结果表明, Dy₃Al₅O₁₂内磁性离子间的交换作用非常微弱, 可以忽略. 从理论上给出了绝热退磁过程中温度变化ΔT与T的关系, 并与Gd₃Ga₅O₁₂晶体进行了比较, 发现不同外磁场下, Dy₃Al₅O₁₂和Gd₃Ga₅O₁₂的低温制冷性能在不同温区有差别. 在进行低温(T<10 K)制冷时, 若外磁场较低, 选择Dy₃Al₅O₁₂作为磁制冷材料较好; 若外磁场较高, 选择Gd₃Ga₅O₁₂作为磁制冷材料较好.     

类花状ZnO-CoFe2 O4 复合纳米管束的制备及其电磁波吸收特性

在90 ℃水溶液中采用两步晶体生长法制备出类花状ZnO-CoFe₂O₄复合纳米管束.ZnO纳米管束的管壁厚度大约为60 nm,管的直径大约为350 nm,CoFe₂O₄纳米颗粒连续包覆在ZnO纳米管束的表面,CoFe₂O₄纳米颗粒尺寸小于40 nm, 壳层厚度随着CoFe₂O₄在ZnO-CoFe₂O_{4 关键词： 类花状 2}O₄')" href="#">ZnO-CoFe₂O₄ 纳米管束 微波吸收剂     

层状钙钛矿La1.3Sr1.7Mn2-xCuxO7的磁性及电特性

通过固相反应烧结法成功制备了层状钙钛矿La_1.3Sr_1.7Mn_2-xCu_xO₇多晶,主要研究了其磁电特性.结果表明,样品为Sr₃Ti₂O₇型钙钛矿结构.随着温度的降低,其磁性经历了一个很复杂的转变过程.当x=0时,在T^*=231K出现二维短程铁磁有序,在< 关键词： 层状钙钛矿 磁性 电特性     

La0.67Sr0.08Na0.25MnO3的奇特输运性质及CMR效应

用固相反应法制备了La_0.67Sr_0.08Na_0.25MnO₃样品.通过磁化强度-温度(M-T)曲线、电阻率-温度(ρ-T)曲线以及ρ-T拟合曲线研究了样品的输运性质及庞磁电阻(colossal magnetoresistance，CMR)效应.结果表明，ρ-T曲线和磁电阻-温度(MR-T)曲线均出现双峰现象；高温峰是伴随顺磁-铁磁(PM-FM)相变出现绝缘体-金属(I-M)相变，低温峰是颗粒界面效应；两个绝缘相输运机理不同：较低温度下(248K<T<274K)，ρ(T)符合极化子的可变程跃迁模型，而在更高温区(330K<T<374K)，ρ(T)符合极化子近邻跃迁模型；两个类金属相输运机理也不同：在低温区(67K<T<186K)，满足ρ-T^2.5关系，输运机理是自旋波散射和电-磁子散射作用，而在高温区(292K<T<304K)，满足ρ-T²关系，输运机理是单磁子散射作用. 关键词： 庞磁电阻 金属-绝缘体转变 晶界效应 输运行为     

钙钛矿型锰氧化物(La$lt;sub$gt;0.8$lt;/sub$gt;Eu$lt;sub$gt;0.2$lt;/sub$gt;)$lt;sub$gt;4/3$lt;/sub$gt;Sr$lt;sub$gt;5/3$lt;/sub$gt;Mn$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;7$lt;/sub$gt;的磁性和电性研究

采用传统固相反应法制备钙钛矿型锰氧化物 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇多晶样品, X-射线衍射分析表明, 样品(La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇结构呈现良好的单相. 通过磁化强度随温度的变化曲线(M-T)、不同温度下磁化强度随磁场的变化曲线(M-H)和电子自旋共振谱发现: 在300 K以下, 随着温度的降低, 样品先后经历了二维短程铁磁有序转变 (T_C^2D ≈ 282 K)、三维长程铁磁有序转变(T_C^3D ≈ 259 K)、奈尔转变(T_N ≈ 208K)和电荷有序转变(T_CO ≈ 35 K); 样品 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇在T_N以下, 主要处于反铁磁态; 在T_C^3D达到370 K时, 样品处于铁磁-顺磁共存态, 在370 K以上时样品进入顺磁态. 此外, 分析电阻率随温度的变化曲线(ρ-T)得到: 样品在金属-绝缘转变温度(T_P ≈ 80 K)附近出现最大磁电阻值, 其位置远离T_C^3D, 表现出非本征磁电阻现象, 其磁电阻值约为61%. 在T_CO以下, 电阻率出现明显增长, 这是由于温度下降使原本在高温部分巡游的e_g电子开始自发局域化增强所致. 通过对 (La_0.8Eu_0.2)_4/3Sr_5/3Mn₂O₇的ρ-T 曲线拟合, 发现样品在高温部分的导电方式基本遵循小极化子的导电方式. 关键词： 磁性 电性 金属-绝缘转变温度 电子自旋共振     

金属间化合物PrMn6Sn6的结构、磁性与119Sn穆斯堡尔谱研究

采用电弧熔炼法制备了金属间化合物PrMn₆Sn₆.X射线衍射表明该化合物具有HoFe₆Sn₆型(空间群为Immm)晶体结构.磁测量表明该化合物为铁磁性，居里温度为325　K.在15—360　K范围内测量了¹¹⁹Sn穆斯堡尔谱，得到了8个Sn原子晶位的转移超精细场随温度的变化，并且讨论了Mn亚晶格与Pr亚晶格的磁有序方向. 关键词： 6Sn₆')" href="#">PrMn₆Sn₆ 穆斯堡尔谱 磁结构     

Thermal transport in the oxygenated magnetic superconductor, Eu1.5Ce0.5RuSr2Cu2O10+δ

The thermal conductivity and thermopower are reported for a hole doped Eu_1.5Ce_0.5RuSr₂Cu₂O_10+δ sample that has been annealed at 1100 K under an oxygen pressure of 54 atm. At T_c=45 K superconductivity and weak ferromagnetism coexist (T_m=180 K). Weak features in the thermopower, S(T), and thermal conductivity, κ(T), are observed both at T_m and at T^*=140 K. The thermopower begins to decrease sharply toward zero at T_c, and there is an extremely sharp increase of about 30% in the thermal conductivity at T_c. This “first order” transition may be related to the sudden appearance of a spontaneous vortex phase at T_c. A small shoulder is observed in κ(T) in the temperature range T=5–13 K.     

Temperature dependence of the critical current in YBa2Cu3O7−δ and Bi2Sr2Ca1Cu2O8 Josephson junctions

We have studied the stationary Josephson effect on YBa₂Cu₃O_7−δ (T_c=90 K) and Bi₂Sr₂Ca₁Cu₂ O₈ (T_c=80 K and 87 K for two samples of different origin) ceramic based junctions. The temperature dependence of the critical current near T_c has been found as I_c≈(T_c-T) for the Y-Ba-Cu-O samples indicating that they should be classified as S-N-I-N-S type junctions. The I-V curves of the Bi-Sr-Ca-Cu samples show the typical behaviour of S-I-S structures. Using Ambegaokar-Baratoff's theory for Bi₂Sr₂Ca₁Cu₂O₈, the temperature dependence of the superconducting state gap Δ(T) was calculated and it was evaluated that 1.452Δ(0)/k_BT_c3.5.     

Ni2O3掺杂对新固相源顶部籽晶熔渗生长法制备单畴GdBCO超导块材超导性能的影响

本文通过在新固相源中添加Ni₂O₃的方法, 采用顶部籽晶熔渗生长工艺(TSIG)制备出组分为(1-x) (Gd₂O₃+1.2BaCuO₂)+x Ni₂O₃、直径为20 mm的单畴GdBCO 超导块材(其中x = 0, 0.02, 0.06, 0.10, 0.14, 0.18, 0.30, 0.50 wt%), 并研究了Ni₂O₃的掺杂量x对样品的表面生长形貌、微观结构、临界温度T_c、磁悬浮力以及俘获磁通密度的影响. 研究结果表明, 当Ni₂O₃的掺杂量x在0–0.50 wt%的范围内时, 均可制备出单畴性良好的样品, 且Ni₂O₃的掺杂对样品中Gd211粒子的分布和粒径没有明显的影响. 在Ni₂O₃的掺杂量x从0增加到0.50 wt%的过程中, 样品的临界温度T_c呈现下降的趋势, 从x=0时的92.5 K下降到x=0.50 wt%时的86.5 K, 这是由于Ni^{3 +}替代GdBCO晶体中Cu^{2 +}所致; 样品磁悬浮力和俘获磁通密度均呈现先增大后减小的变化规律, x=0.14 wt%时, 磁悬浮力达到最大值34.2 N, x=0.10 wt%时, 俘获磁通密度达到最大值0.354 T. 样品磁悬浮力和俘获磁通密度的变化规律与Ni₂O₃的掺杂量x有密切关系, 只有当掺杂量x合适时, Ni³⁺对Cu^{2 +}的替代既不会造成T_c的明显下降, 但又能产生适量的Ni^{3 +}/Cu²⁺ 晶格畸变, 从而达到提高样品磁通钉扎能力和超导性能的效果.     

Realization and properties of ramp-type YBa2Cu3O7−δ/Au/Nb junctions

All-thin-film ramp type Josephson junctions between YBa₂Cu₃O_7−δ and Nb have been fabricated. This procedure allows connections between high-T_c and low-T_c superconductors at different crystal sides of the high-T_c superconductor on one chip, which is of great interest for novel phase devices. A thin Au layer is incorporated as a chemical barrier to avoid oxygen transfer from the YBa₂Cu₃O_7−δ to the Nb. Critical current densities up to 600 A/cm² are obtained at T=4.2 K, with typical R_nA values of 0.8 μΩ cm². The variation of the magnetic field dependence of the critical current with the angle between the junction barrier and the YBa₂Cu₃O_7−δ crystal axes is explained by considering a predominant d_x²−y² order parameter symmetry of the YBa₂Cu₃O_7−δ. The successful fabrication of these junctions allows the implementation of novel superconducting electronics, such as complementary Josephson circuitry or proposed qubit concepts, using the unconventional order parameter symmetry of the high-T_c superconductor.     

Cu NMR study of the superconducting thiospinel Cu1.5Rh1.5S4

The ⁶³Cu NMR Knight shift K and spin-lattice relaxation rate 1/T₁ have been measured to study the thiospinel superconductor Cu_1.5Rh_1.5S₄ from a microscopic viewpoint. K is negative and has a weak dependence on temperature, and the hyperfine coupling constant H_hf^d is estimated to be −52.4 kOe/μ_B. 1/T₁ is proportional to the temperature in the normal state. In the superconducting state, 1/T₁ takes a coherence peak just below T_c, and decreases exponentially well below T_c, from whose temperature dependence the superconducting energy gap has been proved to be close to 2Δ = 3.52k_BT_c given by the BCS theory.     

Trapping mechanism of superconductivity suppression induced by Pr substitution in the Ho1−xPrxBa2Cu3O7−δ system

Pr concentration dependence of the superconducting transition temperature T_c in the Ho_1−xPr_xBa₂Cu₃O_7−δ system is determined from measurements of DC electrical resistance. This dependence coincides with that for the parallely studied Y_1−xPr_xBa₂Cu₃O_7−δ reference system. Both systems have the same value of the critical concentration x_c=0.58, in accordance with nearly equal ionic radii of Ho³⁺ and Y³⁺ ions. It has been shown that the T_c(x) curve can be described with a single mechanism based on a decreasing number of sheet holes trapped by Pr^IV-ions, if one takes also into account that the number of these ions changes with x.     

Magnetic properties of the Bi1.95Sr2.05−xLaxCuOy (Bi-2201) superconducting phase

We have investigated the reversible mixed-state magnetization M of three lanthanum substituted Bi_1.95Sr_2.05−xLa_xCuO_y (Bi-2201) ceramic samples having different critical temperatures T_c ranging from 20.0 to 35.5 K. As for the Bi₂Sr₂CaCu₂O_8+δ (Bi-2212) phase, we found that anisotropy of Bi-2201 is large. A manifestation of this anisotropy is the field independent magnetization M^* observed at a temperature T^*. In the framework of the London model, and including thermal fluctuations of vortices, we found for the temperature dependence of the penetration depth λ_ab(T) = λ_ab(0)[1 − (T/T_c0)ⁿ]^−1/2, with n 1.7 and λ_ab (T = 0) 4000 Å. The estimated upper critical fields μ₀H_c2,c are of the order of 10 T. We observe a peculiar negative slope M/T at low temperature and sufficiently high external magnetic field. This feature seems to be a characteristic of the Bi-2201 phase. However, we do not know whether it is associated with the superconducting mixed-state. A small amount of magnetic impurities could also be responsible for this behavior. Finally, the behavior of the reversible magnetization of the Bi-2201 samples investigated, which are situated at the optimal and in the overdoped region, did not indicate any unusual temperature dependence for the upper critical field H_c2,c.     

钙钛矿锰氧化物(La_(1-x)Eu_x)_(4/3)Sr_(5/3)Mn_2O_7(x=0,0.15)的磁性和电性研究

通过传统固相反应法制备了钙钛矿锰氧化物(La1-xEux)4/3Sr5/3Mn2O7(x=0,0.15)多晶样品,并且对其磁性和电性进行了研究.磁性测量表明:随着温度的降低,样品经历了一个复杂的转变过程,在温度为T*时经历二维短程铁磁有序转变,在温度为TC时进入三维长程铁磁态.随着Eu的掺杂,T*和TC减小,并且样品(La0.85Eu0.15)4/3Sr5/3Mn2O7在低温区表现出自旋玻璃行为.电性质测量表明:在母体La4/3Sr5/3Mn2O7中La位掺杂Eu后电阻率明显变大,金属绝缘转变温度TMI降低,磁电阻峰值增大.这些影响归因于较小的Eu3+离子替代La3+离子导致平均离子半径减小,晶格发生畸变.此外,较小的Eu3+离子优先占据层间岩盐层的R-site,使La3+,Sr3+,Eu3+离子在(La0.85Eu0.15)4/3Sr5/3Mn2O7中的分布更加有序,所以x=0.15的样品的ρ-T曲线只有一个峰.     

High critical current density YBa2Cu3O7−δ tapes prepared by the surface-oxidation epitaxy method

YBa₂Cu₃O_7−δ (YBCO) films with high critical current density (J_c) were successfully fabricated on nickel tapes buffered with epitaxial NiO. NiO was prepared on the textured nickel tape by the surface-oxidation epitaxy (SOE) method. We have reported so far a critical temperature (T_c) of 87 K and J_c=4–6×10⁴ A/cm² (77 K, 0 T) for the YBCO films on NiO/Ni tapes. To enhance the superconducting properties of the YBCO films on the SOE-grown NiO, depositions of thin oxide cap layers such as YSZ, CeO₂, and MgO on NiO were investigated. These oxide cap layers were epitaxially grown on NiO and provided the template for the epitaxial growth of YBCO films. Substantially improved data of T_c=88 K and J_c=3×10⁵ A/cm² (77 K, 0 T) and 1×10⁴ A/cm² (77 K, Hc, 4 T) were obtained for YBCO film on NiO, by using a MgO cap layer with a thickness of 50 nm. The method described in this paper is a simple way to produce long YBCO tape conductors with high-J_c values.     

Influence of fluctuations on thermal conductivity of high-Tc YBa2Cu3O7−δ superconductor

To study a behavior of the thermal conductivity near T_c specific heat and thermal diffusivity of the YBa₂Cu₃O_7−δ high-T_c ceramics were simultaneously measured. Close to T_c = 92.30 K the thermal diffusivity and the thermal conductivity discovered minima and the specific heat – maximum. Quantitative analysis of the influence of thermodynamical fluctuations showed the same power laws with Gaussian exponent equal to 0.5 and existing of crossover from the 3D Gaussian to 3D XY critical behavior in the specific heat and thermal conductivity at the approach to T_c. To explain the minimum in thermal conductivity at T_c we propose a mechanism of scattering of phonons on the superconducting fluctuations.