金属间化合物PrMn6Sn6的结构、磁性与119Sn穆斯堡尔谱研究

采用电弧熔炼法制备了金属间化合物PrMn₆Sn₆.X射线衍射表明该化合物具有HoFe₆Sn₆型(空间群为Immm)晶体结构.磁测量表明该化合物为铁磁性，居里温度为325　K.在15—360　K范围内测量了¹¹⁹Sn穆斯堡尔谱，得到了8个Sn原子晶位的转移超精细场随温度的变化，并且讨论了Mn亚晶格与Pr亚晶格的磁有序方向. 关键词： 6Sn₆')" href="#">PrMn₆Sn₆ 穆斯堡尔谱 磁结构     

Modulation of magnetic properties and enhanced magnetoelectric effects in MnW_(1-x)Mo_xO_4 compounds

In this letter, we investigate the magnetic and ferroelectric properties of polycrystalline MnW1-xMoxO4 （x = 0, 0.05, 0.10, 0.20） compounds. The substitution of nonmagnetic Mo6＋ ions for W6＋ ions modifies the magnetic transition tem- peratures of MnW1-xMoxO4 by changing the Mn-O-Mn bond. As a result, distinct ferroelectric properties and enhanced magnetoelectric effects are observed in Mo6＋-doped MnWO4 compounds. The effects of substitution of Mo6＋ ions on magnetic properties and magnetoelectric coupling are discussed.     

Effect of hydrogenation time on magnetic and electrical properties of polycrystalline Si0.956Mn0.044:B thin films

This paper reports that polycrystalline Si 0.956 Mn 0.044 :B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization. The polycrystalline thin films were treated by hydrogen plasma excited with approach of radio-frequency plasma enhanced chemical vapour deposition for different time of 10 minutes, 15 minutes and 40 minutes. After hydrogenation, the structural properties of the films do not show any change, while both the saturation magnetization and the hole concentration in the films increase at first, then decrease with the increase of hydrogenation time. The obvious correlation between the magnetic properties and the transport properties of the polycrystalline Si 0.956 Mn 0.044 :B films suggests that a mechanism of hole-mediated ferromagnetism is believed to exist in Si-based diluted magnetic semiconductors.     

Structural and Magnetic Properties of Fe-Doped Anatase TiO2 Films Annealed in Vacuum

Structural and magnetic properties of Fe-doped anatase TiO2 films fabricated by sol-gel spin coating are investigated. X-ray diffraction measurements reveal that Fe^3＋ ions are incorporated into the TiO2 lattice. No ferromagnetism-related secondary phases and magnetic nanopaxticles are observed in the films. The presence of electron paramagnetic resonance signals at 9- 2.0 supports oxygen vacancies and/or defects generated in the films after annealing in vacuum. Magnetic measurements indicate that Fe-doped anatase TiO2 films are ferromagnetic at room temperature. These observations suggest that oxygen vacancies and/or defects axe energetically favorable for the long range Fe^3＋-Fe^3＋ ferromagnetic coupling in Fe-doped anatase TiO2 films.     

Room-Temperature Ferromagnetic ZnMnO Thin Films Synthesized by Plasma Enhanced Chemical Vapour Deposition Method

Room-temperature ferromagnetic Mn-doped ZnO films are grown on Si （001） substrates by plasma enhanced chemical vapour deposition （PECVD）. X-ray diffraction measurements reveal that the Znl-xMn.O films have the single-phase wurtzite structure. X-ray photoelectron spectroscopy indicates the existence of Mn^2＋ ions in Mndoped ZnO films. Furthermore, the decreasing additional Raman peak with increasing Mn-doping is considered to relate to the substitution of Mn ions for the Zn ions in ZnO lattice. Superconducting quantum interference device （SQUID） measurements demonstrate that Mn-doped ZnO films have ferromagnetic behaviour at room temperature.