Physical simulations and experimental results of 4H—SiC MESFETs on high purity semi-insulating substrates

In this paper we report on DC and RF simulations and experimental results of 4H--SiC metal semiconductor field effect transistors (MESFETs) on high purity semi-insulating substrates. DC and small-signal measurements are compared with simulations. We design our device process to fabricate n-channel 4H--SiC MESFETs with 100~μm gate periphery. At 30~V drain voltage, the maximum current density is 440~mA/mm and the maximum transconductance is 33~mS/mm. For the continuous wave (CW) at a frequency of 2~GHz, the maximum output power density is measured to be 6.6~W/mm, with a gain of 12~dB and power-added efficiency of 33.7％. The cut-off frequency (f_T) and the maximum frequency (f_max) are 9~GHz and 24.9~GHz respectively. The simulation results of f_T and f_max are 11.4~GHz and 38.6~GHz respectively.     

Design of novel three port optical gates scheme for the integration of large optical cavity electroabsorption modulators and evanescently-coupled photodiodes

This paper presents a novel scheme to monolithically integrate an evanescently-coupled uni-travelling carrier photodiode with a planar short multimode waveguide structure and a large optical cavity electroabsorption modulator based on a multimode waveguide structure. By simulation, both electroabsorption modulator and photodiode show excellent optical performances. The device can be fabricated with conventional photolithography, reactive ion etching, and chemical wet etching.     

Zero biased Ge-on-Si photodetector with a bandwidth of 4.72~GHz at 1550~nm

High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8~μm Ge, with responsivities as high as 0.38 and 0.21~A/W at 1.31 and 1.55~μ m, respectively. The dark current density is 0.37~mA/cm² and 29.4~mA/cm² at 0~V and a reverse bias of 0.5~V. The detector with a diameter of 30~μ m, a 3~dB-bandwidth of 4.72~GHz at an incident wavelength of 1550~nm and zero external bias has been measured. At a reverse bias of 3~V, the bandwidth is 6.28~GHz.     

Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier(UTC) photodiode(PD) is fabricated,and its saturation characteristics are investigated.The responsivity of the 40-μmdiameter PD is as high as 0.83 A/W,and the direct current(DC) saturation current is up to 275 mA.The 1-dB compression point at the 3-dB cutoff frequency of 9 GHz is measured to be 100 mA,corresponding to an output radio frequency(RF) power of up to 20.1 dBm.According to the calculated electric field distributions in the depleted region under both DC and alternating current(AC) conditions,the saturation of the UTC-PD is caused by complete field screening at high optical injection levels.     

Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150~nm, the maximum current density was 330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold voltage was -0.6~V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102~GHz and 450~GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400~GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.     

直接调制光反馈半导体激光器产生超宽带信号

利用直接电流调制光反馈半导体激光器产生了符合美国联邦通信委员会关于室内无线通信频谱限定的超宽带(UWB)微波信号.基于光反馈半导体激光器速率方程组, 数值分析了偏置电流、反馈强度对混沌UWB脉冲信号的影响.研究表明, 混沌UWB脉冲频谱的-10 dB带宽分别随着偏置电流的增大和反馈强度的增强而逐渐增加; 中心频率分别随着偏置电流的增大和反馈强度的增强而逐渐增大.实验中, 产生了中心频率为6.6 GHz, -10 dB带宽为9.6 GHz的混沌UWB信号. 进一步, 通过调节偏置电流和反馈强度, 可实现混沌UWB信号的中心频率和-10 dB带宽的可调谐输出, 实验结果和数值分析相符合.此外, 实验产生的混沌UWB信号经过34.08 km的光纤传输后, 其频谱形状几乎没有发生变化, 表明该方法所产生的混沌UWB信号对光纤色散有较大的容忍度. 关键词： 超宽带 混沌激光 光反馈 直接调制     

L型阵列探测器合成功率研究与设计

针对行波探测器阵列只能合成输出功率而不能同时提高工作带宽的现状,基于m推演型滤波电路原理,提出了一种新的L型阵列探测器,即通过在光电二极管之间串联电容减少结电容对截止频率的影响,再与两个电感串联形成单个阵列单元,然后将单个阵列单元级联构成全新的L型滤波器电路结构。结果表明,L型探测器阵列能够对射频输出信号进行功率合成,同时工作带宽提高至67 GHz,相较于传统光电探测器,工作带宽提高两倍。通过增加级联光电二极管的数量,可以持续增大输出功率,同时L型探测器阵列的推演方法可根据实际需求灵活设计出期望的光电探测器,为未来大带宽、高功率的光电探测器设计提供理论基础。     

Large area InAlAs/InGaAs metal semiconductor metal photodiode with very low dark current and its frequency response

An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an InAlAs barrier enhancement layer is reported that has very low dark current and high speed characteristics. The detector using Cr/Au Schottky metal fingers with 4m spacing on a large active area of 300×300m2 shows a low dark current of 38nA at 10V. This corresponds to a dark current density of 0.42pA/m2 and is, to our knowledge, the best dark current ever obtained from a large area InGaAs MSM PD. The device also shows a low capacitance of 0.8pF and a high 3dB bandwidth of 2.4GHz. By fitting the measured frequency response to a model consisting of both RC time and transit time limited responses, we show that the device has an RC time and a transit time limited 3dB bandwidth of 3.0 and 4.9GHz, respectively. This revised version was published online in June 2006 with corrections to the Cover Date.     

An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

In this paper, a new current expression based on both the direct currect(DC) characteristics of the AlGaN/GaN high election mobility transistor(HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I–V, S-parameter, and radio frequency(RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-μm wide(Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT(10 × 125 μm)). The improved large signal model simulates the I–V characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.     

Theory, Design, and Operation of Large-Orbit High-Harmonic Gyroklystron Amplifiers

The high-harmonic gyroklystron is a compact RF amplifier which relies on the synchronous interaction between large-orbit axis-encircling electrons and high-order azimuthal cylindrical cavity TEn11 modes. Because of this unique structure, it offers the promise of moderate- to high-millimeter-wave output power. Experimental results for a fifth-harmonic two-cavity device are compared to both small-signal analytic theory and large-signal numerical calculations which assess gain, bandwidth, sensitivity to longitudinal velocity spread, self-oscillation, and saturation characteristics. Principal theoretical results include the transition to infinite gain as the start-oscillation current threshold is reached as well as the demonstration of the insensitivity of the small-signal gain to parallel velocity spread. The required high-energy rotating electron beam is provided through gyroresonant RF acceleration. To date, over 20 dB of small-signal gain has been achieved at 11.3 GHz in a 1.3-kG magnetic field. The design of a four-cavity configuration is also presented along with simulation of its gain, bandwidth, amplitude modulation (AM) and phase modulation (PM) sensitivity, dependence upon guiding-center spread, and large-signal saturation characteristics. This device has been constructed and initial tests have yielded a gain of 30 dB. Gain in excess of 50 dB is predicted.     

Potential frequency bandwidth estimation of TO packaging techniques for photodiode modules

Scattering parameters of photodiode chip, TO header and TO packaged module are measured, and the effects of TO packaging network on the high-frequency response of photodiode are investigated. Based on the analysis, the potential bandwidth of TO packaging techniques is estimated from the scattering parameters of the TO packaging network. Another method for estimating the potential bandwidth from the equivalent circuit for the TO packaged photodiode model is also presented. The results obtained using both methods show that the TO packaging techniques used in the experiments can potentially achieve a frequency bandwidth of 22 GHz.     

Design of bias-free operational uni-traveling carrier photodiodes for terahertz wave generation

In this paper, the bias-free operational uni-traveling-carrier photodiode (UTC-PD) for terahertz wave generation is designed via physics-based simulation. The physics-based model is established at first and then the reliability of the simulation is demonstrated by comparison to previously reported experimental results. The epitaxial layers of the UTC-PD are analyzed and investigated to improve its bandwidth and output-power simultaneously. By optimizing the spacers and the collector, and using a combination of optimal graded-doping profile and graded-bandgap material for the absorber, the 3-dB bandwidth and the peaked output-power of the UTC-PD are improved by 36.5% and 2.262 dB, respectively. The 3-dB bandwidth of the optimized bias-free operational UTC-PD with mesa diameter of 8, 6, 5, 4 and 3-μm can achieve 106, 137.67, 158.3, 183 and 211 GHz, respectively.     

Optical fiber sensor based on a radio frequency Mach-Zehnder interferometer

This Letter proposes an optical fiber radio frequency (RF) Mach-Zehnder interferometer (MZI) for sensing applications. An RF modulated laser source is injected into an optical fiber RF-MZI and collected by a photodiode. The interference pattern is observed in the RF domain by sweeping the frequency using a network analyzer. The proposed sensor has a linear response to applied temperature change. In addition, the sensitivity, observation frequency range, and the length of the sensing arm are discussed.     

Method of improved scatterer size estimation and application to parametric imaging using ultrasound

The frequency dependence of RF signals backscattered from random media (tissues) has been used to describe the microstructure of the media. The frequency dependence of the backscattered RF signal is seen in the power spectrum. Estimates of scatterer properties (average scatterer size) from an interrogated medium are made by minimizing the average squared deviation (MASD) between the measured power spectrum and a theoretical power spectrum over an analysis bandwidth. Estimates of the scatterer properties become increasingly inaccurate as the average signal to noise ratio (SNR) over the analysis bandwidth becomes smaller. Some frequency components in the analysis bandwidth of the measured power spectrum will have smaller SNR than other frequency components. The accuracy of estimates can be improved by weighting the frequency components that have the smallest SNR less than the frequencies with the largest SNR in the MASD. A weighting function is devised that minimizes the noise effects on the estimates of the average scatterer sizes. Simulations and phantom experiments are conducted that show the weighting function gives improved estimates in an attenuating medium. The weighting function is applied to parametric images using scatterer size estimates of a rat that had developed a spontaneous mammary tumor.     

同步加速器Barrier Bucket高频电压的研究

同步加速器Barrier Bucket高频系统用于克服空间电荷效应的影响,并对束团进行预压缩从而实现束团的多次累积来提高束流的流强。实现Barrier Bucket束流多次累积,要求在同步环高频加速腔上产生一个单正弦电压信号。针对单正弦波形的特点,讨论在同轴加载腔上产生该电压波形的方法和条件。通过对单正弦信号的频谱分析得出信号对加速腔高频系统的带宽要求,运用等效并联电路的方法并将同轴加载腔作线性时不变近似,求出输出的腔体电压与输入的激励电流间的关系。Barrier Bucket电压信号对加速腔整个高频系统的带宽要求至少应为单正弦频率的两倍。输入的激励电流为单正弦信号的基础上叠加上一个直流脉冲偏置,偏置大小为腔体Q值。最后,根据分析的结果在兰州重离子加速器冷却储存实验环（CSRe）高频系统的铁氧体加载腔和新研制的磁合金加载腔系统上进行测试,并对测试结果作相关讨论。     

Characterization and optimization of high-power InGaAs/InP photodiodes

The performance of 34-μm-diameter InGaAs/InP charge compensated modified uni-traveling carrier photodiodes (CC MUTCs) is studied using a commercial device simulator based on a drift-diffusion model. Excellent agreement has been achieved between simulations and experiments. The origin of the degradation of responsivity at high optical injection level is investigated. Parameters of the photodiode are further optimized to maximize the saturation current without sacrificing bandwidth and responsivity.     

Deposition of plasma-polymerized acetylene by an intense pulsed RFplasma source

An inductively coupled, intense, pulsed RF plasma source deposited plasma-polymerized acetylene at a rate of 127 Å per discharge. The potassium bromide substrate was located 18-cm downstream from the RF coil. A puff valve admitted parent acetylene gas just before the transient RF current was applied. Fourier transform infrared (FTIR) spectra showed that carbon-to-carbon double bonds were formed. Scanning-electron-microscope images showed that the film thickness after 79 discharges was 1 μm. A photodiode showed substantial light emission for about 30 μs during each discharge     

Dispersion characteristics of two-dimensional unmagnetized dielectric plasma photonic crystal

This paper studies dispersion characteristics of the transverse magnetic (TM) mode for two-dimensional unmagnetized dielectric plasma photonic crystal by a modified plane wave method. First, the cutoff behaviour is made clear by using the Maxwell--Garnett effective medium theory, and the influences of dielectric filling factor and dielectric constant on effective plasma frequency are analysed. Moreover, the occurence of large gaps in dielectric plasma photonic crystal is demonstrated by comparing the skin depth with the lattice constant, and the influence of plasma frequency on the first three gaps is also studied. Finally, by using the particle-in-cell simulation method, a transmission curve in the \Gamma -X direction is obtained in dielectric plasma photonic crystal, which is in accordance with the dispersion curves calculated by the modified plane wave method, and the large gap between the transmission points of 27~GHz and 47~GHz is explained by comparing the electric field patterns in particle-in-cell simulation.     

Optoelectronic oscillator using a LiNbO3 phase modulator for self-oscillating frequency comb generation

Optical frequency comb generation by using a novel optoelectronic oscillator (OEO) is proposed and demonstrated with the emphasis placed on self-oscillating operation. In the OEO, a wideband LiNbO3 phase modulator is driven with a large-amplitude radio-frequency (RF) feedback signal to generate a deeply phase-modulated light wave; accordingly, an optical frequency comb with a bandwidth greater than the RF signal is generated by self-oscillation. Although it generates multifrequency components, the OEO exhibits characteristics of a single-mode oscillator. Its operation is stable and self-starting. An optical frequency comb with a 120 GHz bandwidth and 9.95 GHz frequency spacing was successfully generated by self-oscillation at a single frequency.     

Design and optimization of high-performance microring-based uni-traveling carrier photodiode for WDM optical systems

This paper presents the design principles of a novel optimized microring-based uni-traveling carrier photodiode (MR-UTC-PD), for wavelength division multiplexing (WDM) optical systems. The fundamental parameters for output characteristics such as quantum efficiency and 3-dB bandwidth of MR-UTC-PD are discussed. We analyze the effects of basic parameters as effective ring radius, definite coupling condition and the suitable cross section on the MR-UTC-PD main characteristics for high performance of the device. It is shown that the maximum quantum efficiency and most efficient performance of the device can be obtained at critical coupling condition. We show that the maximum 3-dB bandwidth and an efficient approach for high bandwidth-efficiency product can be achieved at overcoupling condition. In this regard, some design curves are presented for the optimized MR-UTC-PD.