Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition |
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| Authors: | Xu Jing-Bo Zhang Hai-Ying Fu Xiao-Jun Guo Tian-Yi and Huang Jie |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | This paper applies a novel quad-layer resist and e-beam
lithography technique to fabricate a GaAs-based InAlAs/InGaAs
metamorphic high electron mobility transistor (HEMT) grown by metal
organic chemical vapour deposition (MOCVD). The gate length of
the metamorphic HEMT was 150~nm, the maximum current density was
330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold
voltage was -0.6~V, and the maximum current gain cut-off frequency
and maximum oscillation frequency were 102~GHz and 450~GHz,
respectively. This is the first report on tri-termination devices
whose frequency value is above 400~GHz in China. The excellent
frequency performances promise the possibility of metamorphic HEMTs
grown by MOCVD for millimetre-wave applications, and more
outstanding device performances would be obtained after optimizing
the material structure, the elaborate T-gate and other device
processes further. |
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| Keywords: | GaAs-based metamorphic HEMT maximum current gain cut-off
frequency maximum oscillation frequency T-gate |
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