Pressure-mediated contact quality improvement between monolayer MoS_2 and graphite

Two-dimensional(2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS_2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS_2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS_2 and graphite by conductive atom force microscope(C-AFM). It was found that at high pressure, the contact quality between graphite and MoS_2 is significantly improved. This pressure-mediated contact quality improvement between MoS_2 and graphite comes from the enhanced charge transfer between MoS_2 and graphite when MoS_2 is stretched. Our results provide a new way to enhance the contact quality between MoS_2 and graphite for further applications.     

Temperature induced size selective synthesis of hybrid Cds/pepsin nanocrystals and their photoluminescence investigation

There is growing interest in materials chemistry for taking advantage of the physical and chemical properties of biomolecules in the development of next generation nanoscale materials for opto-electronic applications. A biomimetic approach to materials synthesis offers the possibility of controlling size, shape, crystal structure, orientation, and organization. The great progress has been made in the control that can be exerted over optical materials synthesis using biomolecules (protein, nucleic acid)/mineral interfaces as templates for directed synthesis. We have synthesized the CdS nanocrystals using pepsin by biomimetic technique at four different set temperatures. X-ray diffraction (XRD) and small angle X-ray scattering (SAXS) results showed that we are able to tune the size and distribution profile just by tuning the reaction (Rx) temperature and goes towards excitonic Bhor radius (2.5 nm) at low temperature (4 °C). The narrow absorption peak at 260 nm from Cd²⁺-pepsin complex dominates and indicates the size dispersion of the modified CdS nanoparticles are fairly monodisperse. Effective mass approximation (EMA) shows large blue-shift (~1 eV) in the band gap for the cubic phase from bulk hexagonal CdS. The photoluminescence (PL) and photoluminescence excitation (PLE) spectra are dominated by a strong and narrow band-edge emission tunable in the blue region indicating a narrow size distribution. The reduction in PL efficiency is observed when the Rx temperature increases however no change in PLE spectra and temporal profiles of the band-edge PL is observed. At 4 °C, high emission efficiency with shift of PL spectrum in the violet region is observed for 1.7 nm size CdS quantum dots (QDs). Presence of pepsin has slowed the PL decay which is of the order of 100 μs.     

Interfacial Charge Transfer Induced Electronic Property Tuning of MoS_2 by Molecular Functionalization

The modulation of electrical properties of MoS_2 has attracted extensive research interest because of its potential applications in electronic and optoelectronic devices.Herein,interfacial charge transfer induced electronic property tuning of MoS_2 are investigated by in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements.A downward band-bending of MoS_2-related electronic states along with the decreasing work function,which are induced by the electron transfer from Cs overlayers to MoS_2,is observed after the functionalization of MoS_2 with Cs,leading to n-type doping.Meanwhile,when MoS_2 is modified with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane(F_4-TCNQ),an upward band-bending of MoS_2-related electronic states along with the increasing work function is observed at the interfaces.This is attributed to the electron depletion within MoS_2 due to the strong electron withdrawing property of F_4-TCNQ,indicating p-type doping of MoS_2.Our findings reveal that surface transfer doping is an effective approach for electronic property tuning of MoS_2 and paves the way to optimize its performance in electronic and optoelectronic devices.     

非晶氧化硅薄膜带尾发光特性

采用等离子体增强化学气相沉积技术,通过改变CO2流量制备了不同氧含量的非晶氧化硅薄膜。利用紫外可见吸收谱、傅里叶红外吸收谱和稳态/瞬态光致发光谱等技术研究了薄膜的微观结构和光学特性。实验结果表明,随着氧含量的增加,薄膜的带隙增大,光致发光强度增加、峰值朝高能方向移动、光谱半峰全宽展宽。时间分辨光谱显示薄膜发光峰值处的衰减时间随氧含量的增加从6.2ns单调增加到21ns,而同一样品的发光寿命随发射波长能量增加而减小。综合分析光学吸收、发射及发光衰减特性表明,薄膜的发光机制主要归结为非晶材料带尾态之间的辐射复合。     

Giant enhancement of photoluminescence emission in monolayer WS2by femtosecond laser irradiation

Monolayer transition metal dichalcogenides have emerged as promising mat erials for opt oelectTonic and nanophotonic devices.However,the low photoluminescence(PL)quantum yield(QY)hinders their various potential applications.Here we engineer and enhance the PL intensity of monolayer WS₂by femtosecond laser irradiation.More than two orders of magnitude enhancement of PL intensity as compared to the as-prepared sample is determined.Furthermore,the engineering time is shortened by three orders of magnitude as compared to the improvement of PL intensity by continuous-wave laser irradiation.Based on the evolution of PL spectra,we attribute the giant PL enhancement to the conversion from trion emission to exciton,as well as the improvement of the QY when exciton and trion are localized to the new-formed defects.We have created microstructures on the monolayer WS₂based on the enhancement of PL intensity,where the engineered structures can be stably stored for more than three years.This flexible approach with the feature of excellent long-term storage stability is promising for applications in information storage,display technology,and opto electronic devices.     

Modulation of the second-harmonic generation in MoS_2 by graphene covering

Nonlinear optical frequency mixing,which describes new frequencies generation by exciting nonlinear materials with intense light field,has drawn vast interests in the field of photonic devices,material characterization,and optical imaging.Investigating and manipulating the nonlinear optical response of target materials lead us to reveal hidden physics and develop applications in optical devices.Here,we report the realization of facile manipulation of nonlinear optical responses in the example system of MoS₂ monolayer by van der Waals interfacial engineering.We found that,the interfacing of monolayer graphene will weaken the exciton oscillator strength in MoS₂ monolayer and correspondingly suppress the second harmonic generation(SHG)intensity to 30%under band-gap resonance excitation.While with off-resonance excitation,the SHG intensity would enhance up to 130%,which is conjectured to be induced by the interlayer excitation between MoS₂ and graphene.Our investigation provides an effective method for controlling nonlinear optical properties of two-dimensional materials and therefore facilitates their future applications in optoelectronic and photonic devices.     

Effect of defects on the electronic structure of a PbI_2/MoS_2 van der Waals heterostructure: A first-principles study

PbI_2/MoS_2, as a typical van der Waals(vdW) heterostructure, has attracted intensive attention owing to its remarkable electronic and optoelectronic properties. In this work, the effect of defects on the electronic structures of a PbI_2/MoS_2 heterointerface has been systematically investigated. The manner in which the defects modulate the band structure of PbI_2/MoS_2, including the band gap, band edge, band alignment, and defect energy-level density within the band gap is discussed herein. It is shown that sulfur defects tune the band gaps, iodine defects shift the positions of the band edge and Fermi level, and lead defects realize the conversions between the straddling-gap band alignment and valence-band-aligned gap, thus enhancing the light-absorption ability of the material.     

Influence of ion bombardment on the photoluminescence response of embedded CdS nanoparticles

Semiconductor nanoparticles (CdS) were fabricated by an inexpensive chemical route using polyvinyl alcohol (PVA) as the dielectric host matrix. Nano-CdS in PVA were subjected to ion irradiation (using oxygen, chlorine and gold) in the medium energy range (80–100 MeV) and under fluence variation of 10¹¹–10¹³ ions/cm². The nature of light emission was found to be drastically different in each of the three cases. Photoluminescence spectra of oxygen irradiated samples exhibit band edge emission (2.8 eV) as well as trap related emission (1.76 eV) whereas band edge emission is found to be bleached out for chlorine ion irradiated nano-CdS. The intense broad PL peaks, noticeable in the case of gold ion irradiated samples suggest superposition of the two peaks — namely, band edge emission and trap related emission. Furthermore, in the case of gold ion irradiated nano-CdS, energy shift in the PL spectra reveals variation in size distribution caused by the extra pressure effect of heavy gold ion beams. The mechanism of such a difference as a result of ion irradiation-type and ion-fluence is discussed in detail.     

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique,and optical emissions from the near-infrared to the visible are obtained.The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content,and the photoluminescence(PL) peak shifts from 1.51 eV to 2.16 eV.The band tail state PL mechanism is confirmed by analysing the optical band gap,PL intensity,the Stocks shift of the PL,and the Urbach energy of the film.The PL decay times of the samples are in the nanosecond scale,and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.     

Various Trap States at SiGe-SiO2 Interface Formed by a Pulsed Laser

We report fabrication of low-dimensional structures in air by a pulsed laser on SiGe alloy samples in which different oxide structures are formed by laser irradiation and annealing treatment. The micro-structures on SiGe are more complex than those on Si. A series of photolumineseence （PL） emission is observed due to various trap states at the SiGe-SiO2 interface formed under different preparing conditions. The peak centre of PL emission exhibits red=shift from Si to SiGe because of narrower gap. A model for explaining the PL emission is proposed in which the trap states of the interface between some oxide and SiGe play an important role.     

激光辐照和高温氧化硅锗合金的低维结构和发光特性

采用强激光辐照硅锗合金,然后高温氧化的方法,在样品表面生成微米级小孔,用高精度扫描电镜观察孔内结构,发现片状纳米结构的存在。用荧光光谱仪测量其光致荧光谱,对于激光辐照(无高温氧化)的样品,在峰值705 nm处出现较强的光致发光(PL)。高温氧化后,样品在606 nm处出现一尖锐的PL光谱。利用量子受限和纳晶与氧化物的界面态综合模型解释PL光谱的产生。     

Study of photophysical properties AlBaq5

Pure and Ba²⁺ doped Alq₃ complexes were synthesized by simple precipitation method at room temperature, maintaining stoichiometric ratio. These complexes were characterized by XRD, UV–vis and FT-IR and photoluminescence (PL) spectra. XRD analysis reveals the polycrystalline nature of the synthesized complexes, while UV and FTIR confirm the molecular structure and the completion of quinoline ring formation and presence of quinoline structure in the metal complex. PL spectra of Alq₃ compared with barium doped complexes exhibit highest intensity in comparison to Alq₃ phosphor, which proves that barium enhances PL emission intensity of Alq₃ phosphor. The excitation spectra of the synthesized complexes are in the range of 300–480 nm with a broad peak in the range of 429–440 nm and shoulder at 380 nm, but with varying intensity. The emission wavelength lies in the range of 501–506 nm. Among all the synthesized complexes, AlBa₂q₅ exhibits maximum emission intensity. These remarkable properties of AlBaq₅ could be considered as promising materials as optoelectronic materials as well as green light emissive materials for OLEDs, PLLCD and solid state lighting applications.     

新型蓝色磷光嘧啶铱(Ⅲ)配合物的合成及发光性质

设计并合成了以2-(2,4-二氟苯基)嘧啶(DFPPM)为主配体的两种新型二嗪铱配合物 (Ph:苯基)和,用核磁共振(NMR)和质谱等方法对其进行了表征,并用紫外-可见吸收光谱和光致发光光谱对其光学性质进行了研究。光致发光光谱结果显示:配合物 的发射峰波长为472 nm和489 nm;而配合物 的发射峰波长为447 nm和472 nm,1931CIE色度坐标为(0.14,0.15),是一种深蓝色磷光材料。以 为客体材料、PVK为主体材料制备了电致发光器件,研究了其电致发光光谱。结果表明,电致发光光谱与光致发光光谱相比有较大程度的红移。     

PLD方法制备的ZnO纳米柱结构及光学特性

采用无催化脉冲激光沉积(PLD)方法,在InP(100)衬底上生长纳米ZnO柱状结构。采用扫描电子显微镜(SEM)、X射线衍射(XRD)以及光致发光(PL)谱等表征手段对ZnO纳米柱的形貌、晶体结构和光学特性进行了观察。SEM图像观察到ZnO纳米柱状结构具有一定的取向性;XRD测试在2θ=34.10°处观测到强的ZnO(002)衍射峰,证实ZnO纳米柱具有较好的c轴择优取向;室温PL谱在379nm处观察到了强的自由激子发射峰(半峰全宽为19nm),未探测到深能级跃迁发射峰,表明生长的纳米ZnO结构具有很高的光学质量。     

Pressure-induced two-color photoluminescence in MnF(2) at room temperature

A novel two-color photoluminescence (PL) is found in MnF(2) at room temperature under high pressure. Contrary to low-temperature PL, PL at room temperature is unusual in transition-metal concentrated materials like MnF(2), since the deexcitation process at room temperature is fully governed by energy transfer to nonradiative centers. We show that room-temperature PL in MnF(2) originates from two distinct Mn(2+) emissions in the high-pressure cotunnite phase. The electronic structure and the excited-state dynamics are investigated by time-resolved emission and excitation spectroscopy at high pressure.     

水热法制备Co掺杂ZnO纳米棒及其光学性能

采用水热法在石英衬底上以Zn(CH3COO)2.2H2O和Co(NO3)2.6H2O水溶液为源溶液,以C6H12N4(HMT)溶液作为催化剂,在较低温度下制备了Co掺杂的ZnO纳米棒。采用X射线衍射(XRD)和扫描电子显微镜(SEM)对所生长ZnO纳米棒的晶体结构和表面形貌进行了表征,考察了Co掺杂对ZnO纳米棒微观结构和对发光性能影响的机制。结果表明:Co掺杂的ZnO纳米棒呈六方纤锌矿结构,具有沿(002)面择优生长特性,Co掺杂使ZnO纳米棒的直径变细;同时室温光致发光(PL)谱检测显示Co掺杂ZnO纳米棒具有很强的近带边紫外发光峰,而与深能级相关的缺陷发光峰则很弱。本研究采用水热法在石英衬底上于较低温度下生长出了具有较高光学质量的Co掺杂ZnO纳米棒。     

Effect on photophysical properties of colloidal ZnS quantum dots by doping with cobalt, copper, and cobalt�Ccopper mixtures

Colloidal ZnS quantum dots (QDs) are prepared by passing H₂S gas through a solution of Zn(CH₃COO)₂ in acetonitrile. Photophysical properties are investigated using UV?CVisible and photoluminescence (PL) spectroscopy. The spectrum shows an absorption shoulder at 271 nm representing a band gap of 4.6 eV. The doping of ZnS QDs with Co, Cu, and a mixture of Co and Cu not only increased the band gap to 0.2 eV but also turns these otherwise colorless QDs to blue in color due to cobalt, and green due to Cu. The observed emission in the visible region suggests that the dopants may have induced additional excited states to the ZnS QDs. This absorbance in the visible region can be utilized in the optoelectronic applications.     

Experimental investigation of energy transfer between CdSe/ZnS quantum dots and different-sized gold nanoparticles

Hybrid nanostructures of quantum dots(QDs) and metallic nanostructure are attractive for future use in a variety of optoelectronic devices. For photodetection applications, it is important that the photoluminescence (PL) of QDs is quenched by the metallic nanostructures. Here, the quenching efficiency of CdSe/ZnS core-shell quantum dots (QDs) with different sized gold nanoparticles (NPs) films through energy transfer is investigated by measuring the PL intensity of the hybrid nanostructures. In our research, the gold NPs films are formed by the post-annealing of the deposited Au films on the quartz substrate. We find that the energy transfer from the QDs to the Au NPs strongly depends on the sizes of the Au NPs. For CdSe/ZnS QDs direct contact with the Au NPs films, the largest energy transfer efficiency are detected when the resonance absorption peak of the Au NPs is nearest to the emission peak of the CdSe/ZnS QDs. However, when there is a PMMA spacer between the QDs layer and the Au NPs films, firstly, we find that the energy transfer efficiency is weakened, and the largest energy transfer efficiency is obtained when the resonant absorption peak of the Au NPs is farthest to the emission peak wavelength of CdSe/ZnS QDs. These results will be useful for the potential design of the high efficiency QDs optoelectronic devices.     

Influence of size and surface capping on photoluminescence and cytotoxicity of gold nanoparticles

Hydrophilic and homogeneous sub-10 nm blue light-emitting gold nanoparticles (NPs) functionalized with different capping agents have been prepared by simple chemical routes. Structure, average, size, and surface characteristics of these NPs have been widely studied, and the stability of colloidal NP solutions at different pH values has been evaluated. Au NPs show blue PL emission, particularly in the GSH capped NPs, in which the thiol-metal core transference transitions considerably enhance the fluorescent emission. The influence of capping agent and NP size on cytotoxicity and on the fluorescent emission are analyzed and discussed in order to obtain Au NPs with suitable features for biomedical applications. Cytotoxicity of different types of gold NPs has been determined using NPs at high concentrations in both tumor cell lines and primary cells. All NPs used show high biocompatibility with low cytotoxicity even at high concentration, while Au-GSH NPs decrease viability and proliferation of both a tumor cell line and primary lymphocytes.     

Surface enhanced strong visible photoluminescence from one-dimensional multiferroic BiFeO3 nanostructures

The surface defect dominated visible emission from one-dimensional multiferroic BiFeO₃ (BFO) nanowires (NWs) is characterized by photoluminescence (PL) spectroscopy. The PL spectra of BFO NWs exhibit a weak near band emission (NBE) along with a strong defect-level emission (DLE). It is suggested that excess surface defects exist in BFO NWs which are responsible for strong visible green emission. Passivation of BFO NW surface with H₂ significantly improves the NBE emission while suppressing surface recombination. Such a surface enhanced emission promises many potential applications of BFO NWs not only in photonic devices such as LEDs but also in fluorescence-based chemical sensing.