Orbit-Transfer Torque Driven Field-Free Switching of Perpendicular Magnetization

he reversal of perpendicular magnetization （PM） by electric control is crucial for high-density integration of low-power magnetic random-access memory.Although the spin-transfer torque and spin-orbit torque technologies have been used to switch the magnetization of a free layer with perpendicular magnetic anisotropy,the former has limited endurance because of the high current density directly through the junction,while the latter requires an external magnetic field or unconventional configuratio...     

基于石墨烯光子晶体光纤的流体传感器

与传统的传感器设备阵列相比,由于结构更为简单,具有广泛检测兼容性的光纤系统逐渐成为分布式监测的有力候选者。然而,受工作机制的限制,大多数光纤传感器仍局限于对折射率等物理参数进行探测,一种用于环境化学监测的全光纤分布式传感系统亟待研发。本工作中,我们向化学气相沉积法生长的石墨烯光子晶体光纤(Gr-PCF)中引入了一种化学传感机制。初步结果表明,石墨烯光子晶体光纤可以选择性地检测浓度为ppb级的二氧化氮气体,并在液体中表现出离子敏感性。石墨烯光子晶体光纤与光纤通信系统的波分、时分复用技术结合后,将为实现分布式光学传感环境问题提供巨大的潜力和机会。     

Modulation of the second-harmonic generation in MoS_2 by graphene covering

Nonlinear optical frequency mixing,which describes new frequencies generation by exciting nonlinear materials with intense light field,has drawn vast interests in the field of photonic devices,material characterization,and optical imaging.Investigating and manipulating the nonlinear optical response of target materials lead us to reveal hidden physics and develop applications in optical devices.Here,we report the realization of facile manipulation of nonlinear optical responses in the example system of MoS₂ monolayer by van der Waals interfacial engineering.We found that,the interfacing of monolayer graphene will weaken the exciton oscillator strength in MoS₂ monolayer and correspondingly suppress the second harmonic generation(SHG)intensity to 30%under band-gap resonance excitation.While with off-resonance excitation,the SHG intensity would enhance up to 130%,which is conjectured to be induced by the interlayer excitation between MoS₂ and graphene.Our investigation provides an effective method for controlling nonlinear optical properties of two-dimensional materials and therefore facilitates their future applications in optoelectronic and photonic devices.