Various Trap States at SiGe-SiO2 Interface Formed by a Pulsed Laser |
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Authors: | HUANG Wei-Qi LÜ Quan XU Li ZHANG Rong-Tao WANG Hai-Xu JIN Feng |
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Institution: | Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025Department of Physics, Datong University, Datong 730013 |
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Abstract: | We report fabrication of low-dimensional structures in air by a pulsed laser on SiGe alloy samples in which different oxide structures are formed by laserirradiation and annealing treatment. The micro-structures on SiGe are more complex than those on Si. A series of photoluminescence (PL) emission is observed due to various trap states at the SiGe-SiO2 interface formed under different preparing conditions. The peak centre of PL emission exhibits red-shift from Si to SiGe because of narrower gap. A model for explaining the PLemission is proposed in which the trap states of the interface between some oxide and SiGe play an important role. |
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Keywords: | 68 35 -p 61 43 Bn |
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