A negative deviation from Porod’s law in SAXS of organo—MSU—X

Small-angle X-ray scattering(SAXS)using synchrotron radiation as X-ray source has been employed to charactcizc the microscopic structrure of organo-modified mesoporous molecular sieves(organo-MSU-X)prepared by a one-pot template-directed synthesis.It is shown that the SAXS profile is hardly constant with Porod’s law showing a negative slope,i.e.,negative deviation.This suggests that there is diffuse interfacial layer located between the pores and the matrix.This suggests that the organic groups remain covalently linked to the matrix,as indicated by ^29SiCP MAS NMR and FT-IR.The average thickness of the interfacial layer was found to be about 1nm for each of the three samples with different kinds and the same amounts(20? of organic groups.This kind of material has also been proved to possess both surface and mass fractal structure of the amophous porous silica materials.2001 Elsevier Science B.V.All rights reserved.     

Vapour Recoil Effect on a Vapour Liquid System with a Deformable Interface

A new two-sided model of vapour-liquid layer system with a deformable interface is proposed. In this model, the vapour recoil effect on the Marangoni-Bénard instability of a thin evaporating liquid layer can be examined only when the interface deflexion is considered. The instability of a liquid layer undergoing steady evaporation induced by the coupling of vapour recoil effect and the Marangoni effect is analysed using a linear stability theory. We modify and develop the Chebyshev-Tau method to solve the instability problem of a deformable interface system by introducing a new equation at interface boundary. New instability behaviour of the system has been found and the self-amplification mechanism between the evaporation flux and the interface deflexion is discussed.     

SAXS andalysis of interface in organo—modified mesoporous silica

A small-angle x-ray scattering(SAXS)technique using synchrotron radiation as the x-ray source has been employed to characterize the microstructure of mesoporous silica prepared by one-pot template-directed synthesis methodology.The scattering of pure silica agreed with Porod’s law.the scattering of organomodified mesoporous silica showed a negative deviation from Porod’s law,suggesting that an interfacial layer exists between the pores and silica matrix.It was the organic groups comprising the interface,as shown by ^29Si cross-polarization magic-angle spinning nuclear magnetic resonance imaging (^29Si cp MAS/NMR) and Fourier transform infrared spectroscopy(FTIR),that caused this negative deviation of SAXS intensity from Porod’s law,and the average thichness of the interfacial layer could be deduced from this negative deviation.Copyright 2001 john Wiley and Sons,Ltd.     

Research of Trap and Electron Density Distributions in the Interface of Polyimide/Al_2O_3 Nanocomposite Films Based on IDC and SAXS

The distributions of traps and electron density in the interfaces between polyimide(PI) matrix and Al_2O_3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering(SAXS) tests.According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al_2O_3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054×10~(22) eV·m~(-3) at 1.324 eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al_2O_3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials.     

Interface Instability of Diamond Crystals at High Temperature and High Pressure

Diamond growth instability at high temperature and high pressure (HPHT) has been elucidated by observing the cellular interface in diamond crystals.The HPHT diamond crystals grow layer by layer from solution of carbon in the molten catalyst.In the growth of any other cyrstals from solution,the growth interface is not stable and should be of the greatest significance to understand further the diamond growth mechanism.During the diamond growth,the carbon atoms are delivered to the growing diamond crystal by diffusion through a diamond crystal-solution boundary layer.In front of the boundary layer,there is a narrow constitutional supercooling zone related to the solubility difference between diamond and graphite in the molten catalyst.The diamond growth stability is broken,and the flat or planar growth interface transforms into a cellular interface due to the light supercooling.The phenomenon of solute trails in the diamonds was observed,the formation of solute trails was closely associated with the cellular interface.     

Positive deviation from debye‘s theory in small—angle x—ray scattering

The small-angle x-ray scattering (SAXS) resulting from a non-ideal two-phase system having sharply defined phase boundaries but with micro-fluctuations of electron density within any phase shows a positive deviation from Debye's theory. We have found a simple method suitable for fitting the slit-smeared SAXS data and correcting the positive deviation. The validity of this procedure is tested on porous ZrO_2 xerogel prepared using the sol-gel process.     

Prediction of the plasma distribution using artificial neural network

In this work,an artificial neural network (ANN) model is established using a back-propagation training algorithm in order to predict the plasma spatial distribution in an electron cyclotron resonance (ECR)—plasma-enhanced chemical vapor deposition (PECVD) plasma system. In our model, there are three layers:the input layer, the hidden layer and the output layer. The input layer is composed of five neurons: the radial position, the axial position, the gas pressure, the microwave power and the magnet coil current. The output layer is our target output neuron: the plasma density. The accuracy of our prediction is tested with the experimental data obtained by a Langmuir probe, and ANN results show a good agreement with the experimental data. It is concluded that ANN is a useful tool in dealing with some nonlinear problems of the plasma spatial distribution.     

A Multi Purpose DAQ System Developed for the nTOF Commissioning

The neutron Time Of Flight (nTOF) facility at CERN is a high flux spallation neutron source commissioned in Nov 2000 and APr 2001.For the commissioning phases an innovative multipurpose DAQ system was developed and used.This system is capable of handling high data rated(10Mb/s) with the use of the National Instruments PCI-VXI interface board to communicate with the VME crates.The graphical user interface is based on Java^TM and ROOT allowing immediate visualization of the data and providing a flexible way of creating configurations for various experimental setups.     

Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers

A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.     

V–L decomposition of a novel full-waveform lidar system based on virtual instrument technique

A novel three-dimensional(3D) imaging lidar system which is based on a virtual instrument technique is introduced in this paper. The main characteristics of the system include: the capability of modeling a 3D object in accordance with the actual one by connecting to a geographic information system(GIS), and building the scene for the lidar experiment including the simulation environment. The simulation environment consists of four parts: laser pulse, atmospheric transport,target interaction, and receiving unit. Besides, the system provides an interface for the on-site experiment. In order to process the full waveform, we adopt the combination of pulse accumulation and wavelet denoising for signal enhancement.We also propose an optimized algorithm for data decomposition: the V–L decomposition method, which combines Vondrak smoothing and laser-template based fitting. Compared with conventional Gaussian decomposition, the new method brings an improvement in both precision and resolution of data decomposition. After applying V–L decomposition to the lidar system, we present the 3D reconstructed model to demonstrate the decomposition method.     

Influence of interface roughness on reflectivity of tungsten/boron-carbide multilayers with variable bi-layer number by X-ray reflection and diffuse scattering

Infuence of interface roughness on the reflectivity of Tungsten/boron-carbide （W/B4C） multilayers varying with bi-layer number, N, is investigated. For W/B4C multilayers with the same design period thickness of 2.5 nm, a real-structure model is used to calculate the variation of reflectivities with N = 50, 100, 150, and 200, respectively. Then, these multilayers are fabricated by a direct current （DC） magnetron sputtering system. Their reflectivity and scattering intensity are measured by an X-ray diffractometer （XRD） working at Cu Kα line. The X-ray reflectivity measurement indicates that the reflectivity is a function of its bi-layer number. The X-ray scattering measured results show that the interface roughness of W/B4C multilayers increases slightly from layer to layer during multilayer growing. The variation of the reflectivity and interface roughness with bi-layer number is accurately explained by the presented realstructure model.     

Characterisation of the plasma density with two artificial neural network models

This paper establishes two artificial neural network models by using a multi layer perceptron algorithm and radial based function algorithm in order to predict the plasma density in a plasma system.In this model,the input layer is composed of five neurons:the radial position,the axial position,the gas pressure,the microwave power and the magnet coil current.The output layer is the target output neuron:the plasma density.The accuracy of prediction is tested with the experimental data obtained by the Langmuir probe.The effectiveness of two artificial neural network models are demonstrated,the results show good agreements with corresponding experimental data.The ability of the artificial neural network model to predict the plasma density accurately in an electron cyclotron resonance-plasma enhanced chemical vapour deposition system can be concluded,and the radial based function is more suitable than the multi layer perceptron in this work.     

Characterisation of the two artificial neural plasma density with network models

This paper establishes two artificial neural network models by using a multi layer perceptron algorithm and radial based function algorithm in order to predict the plasma density in a plasma system. In this model, the input layer is composed of five neurons： the radial position, the axial position, the gas pressure, the microwave power and the magnet coil current. The output layer is the target output neuron： the plasma density. The accuracy of prediction is tested with the experimental data obtained by the Langmuir probe. The effectiveness of two artificial neural network models are demonstrated, the results show good agreements with corresponding experimental data. The ability of the artificial neural network model to predict the plasma density accurately in an electron cyclotron resonance-plasma enhanced chemical vapour deposition system can be concluded, and the radial based function is more suitable than the multi layer perceptron in this work.     

Multi-relaxation-time lattice Boltzmann front tracking method for two-phase flow with surface tension

<正>In this paper,an improved incompressible multi-relaxation-time lattice Boltzmann-front tracking approach is proposed to simulate two-phase flow with a sharp interface,where the surface tension is implemented.The lattice Boltzmann method is used to simulate the incompressible flow with a stationary Eulerian grid,an additional moving Lagrangian grid is adopted to track explicitly the motion of the interface,and an indicator function is introduced to update the fluid properties accurately.The interface is represented by using a four-order Lagrange polynomial through fitting a set of discrete marker points,and then the surface tension is directly computed by using the normal vector and curvature of the interface.Two benchmark problems,including Laplace’s law for a stationary bubble and the dispersion relation of the capillary wave between two fluids are conducted for validation.Excellent agreement is obtained between the numerical simulations and the theoretical results in the two cases.     

Study on the delamination of tungsten thin films on Sb2Te3

To investigate the reliability of electrode materials for chalcogenide random access memory （C-RAM） applications, the geometry and time evolution of the worm-like delamination patterns on a tungsten/Sb2Te3 bilayer system surface are observed by field emission scanning electronic microscope （FESEM） and optical microscopy. The tungsten film stress and interface toughness are estimated using a straight-side model. After confirming the instability of this system being due to large compressive stress stored in the tungsten film and relative poor interface adhesion, a preliminary solution as the inset of a TiN adhesion layer is presented to improve the system performances.     

Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

An a-SiNx/nanocrystalline silicon [（nc-Si）/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition （PECVD） system at low temperature （250℃）. The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2 ×10^11 cm^-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNs insulator layer are obtained. The density of interface state at the midgap is calculated to be 1 ×10^10 cm^-2eV^-1 from the quasistatic and high frequency C - V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage （C- V） measurement at room temperature. An ultra-large hysteresis is observed in the C - V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.     

Effect of PECVD SiN_x/SiO_yN_x–Si interface property on surface passivation of silicon wafer

It is studied in this paper that the electrical characteristics of the interface between Si O_y N_x/Si N_x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the Si O_y N_x layer on interface parameters, such as interface state density Ditand fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin Si O_y N_x layer between the Si N_x and the silicon wafer can suppress Qfin the film and Ditat the interface. The positive Qfand Ditand a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the Si O_y N_x film increasing. Prepared by deposition at a low temperature and a low ratio of N_2O/Si H_4 flow rate, the Si O_y N_x/Si N_x stacks result in a low effective surface recombination velocity(Seff) of 6 cm/s on a p-type 1 ?·cm~(–5) ?·cm FZ silicon wafer.The positive relationship between Seffand Ditsuggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it.     

Photoacoustic measurement of thermal properties and thickness of buried layers in a multilayer film

The photoacoustic model of multilayer with a strong-absorbing surface layer is developed. The phase of ph0toacoustie signal is measured as a function of modulated frequency using apparatus totally controlled by a computer system. The thermal diffusivity, effusivity as well as thickness of several buried layers are obtained independently through the best fit of experimental data according to the theoretical model. The multilayers of thin metal and alloy film are investigated. This method is proved to be valuable particularly in nondestructive examination of subsurface physical properties.     

Introduction of F_4-TCNQ/MoO_3 layers for thermoelectric devices based on pentacene

We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane(F4-TCNQ) and MoO3 for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F4-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO3 layer between the F4-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO3 layer and the Au electrode.     

The numerical study of shock-induced hydrodynamic instability and mixing

Based on multi-fluid volume fraction and piecewise parabolic method (PPM), a multi-viscosity-fluid hydrodynamic code MVPPM (Multi-Viscosity-Fluid Piecewise Parabolic Method) is developed and applied to the problems of shock-induced hydrodynamic interfacial instability and mixing. Simulations of gas/liquid interface instability show that the influences of initial perturbations on the fluid mixing zone (FMZ) growth are significant, especially at the late stages, while grids have only a slight effect on the FMZ width, when the interface is impulsively accelerated by a shock wave passing through it. A numerical study of the hydrodynamic interfacial instability and mixing of gaseous flows impacted by re-shocks is presented. It reveals that the numerical results are in good agreement with the experimental results and the mixing growth rate strongly depends on initial conditions. Ultimately, the jelly layer experiment relevant to the instability impacted by exploding is simulated. The shape of jelly interface, position of front face of jelly layer, crest and trough of perturbation versus time are given; their simulated results are in good agreement with experimental results.