Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction （RHEED） and ex-situ high resolution x-ray diffraction （HRXRD）. The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2＋ substituting Zn^2＋ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature.     

Tunable exchange bias in La1.5Sr0.5CoMnO6 double perovskite doped with nonmagnetic Ga ions

The crystal structure, electronic structure, and magnetic behaviors of nonmagnetic Ga ions doped double perovskite La_1.5Sr_0.5CoMnO₆ single phase crystals have been investigated. Different from the traditional magnetic dilution effect of nonmagnetic doping, Ga doping in La_1.5Sr_0.5CoMnO₆ enhances the ferromagnetic (FM) exchange interaction of Co³⁺-O-Mn³⁺. Moreover, both conventional and spontaneous exchange bias (EB) effects can be tuned by modulating the Ga doping content, which is accompanied by the variation of the Co^3+/4+ and Mn^3+/4+ and the effective magnetic moment. The EB field and magnetization can be improved by nonmagnetic Ga³⁺ doping with content lower than 0.2. The evolution of conventional and spontaneous EB effects in La_1.5Sr_0.5Co_1-xGa_xMnO₆ can be understood in terms of the unidirectional interface anisotropic coupling between FM/anti-FM, and/or FM/spin glass, which is affected by antisite disorder, spin glass, and the uncompensated coupling between Co and Mn.     

Room-Temperature Ferromagnetism in Zn1-xMnxO Thin Films Deposited by Pulsed Laser Deposition

Zn1-xMnxO （x = O.Olq3.1） thin films with a Curie temperature above 300K are deposited on Al2O3 （0001） substrates by pulsed laser deposition. X-ray diffraction （XRD）, ultraviolet （UV）-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device （SQUID）. The results indicate that Mn doping introduces the incorporation of Mn^2＋ ions into the ZnO host matrix and the insertion of Mn^2＋ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films.     

Structural and Magnetic Properties of Fe-Doped Anatase TiO2 Films Annealed in Vacuum

Structural and magnetic properties of Fe-doped anatase TiO2 films fabricated by sol-gel spin coating are investigated. X-ray diffraction measurements reveal that Fe^3＋ ions are incorporated into the TiO2 lattice. No ferromagnetism-related secondary phases and magnetic nanopaxticles are observed in the films. The presence of electron paramagnetic resonance signals at 9- 2.0 supports oxygen vacancies and/or defects generated in the films after annealing in vacuum. Magnetic measurements indicate that Fe-doped anatase TiO2 films are ferromagnetic at room temperature. These observations suggest that oxygen vacancies and/or defects axe energetically favorable for the long range Fe^3＋-Fe^3＋ ferromagnetic coupling in Fe-doped anatase TiO2 films.     

Influence of Interface Structure of Co/Cu （100） Superlattices on Electronic Structure and Giant Magnetoresistance

Electronic structures and magnetoresistance （MR） of Co3 Cu5 and Co3 Cur models as well as their interface atom exchange models Co2 CuCoCu4 and Co2 CuCoCu6 are investigated by the tlrst-principles pseudopotential planewave method based on density functional theory. Charge transfer, magnetic moment, density of states, spin asymmetry factor, and MR ratio are discussed. The results show that the values of charge transfer and spin asymmetry factor at the Fermi level of Co layers are closely related to the neighbouring background of the Co layer. The Co layer with two sides adjacent to the Cu layer would transfer more charge to the Cu layer than other neighbouring background and have the largest spin asymmetry factor at the Fermi level. The Co layer with two neighbouring Co layers （interior Co） would gain a little charge and have the smallest spin asymmetry factor at the Fermi level. Two-current model is used to evaluate the MR ratio of Co2CuCoCu4 （Co2CuCoCu6） to be larger than that of Co3 Cu5 （Co3 CUT）, which can be explained by the charge transfer and spin asymmetry factor.     

Concentration and Temperature Dependences of YBO3：Bi^3＋ Luminescence under Vacuum Ultraviolet Excitation

Bi^3＋ doped YB03 phosphors are prepared by solid state reaction and their luminescent properties are investi- gated by using synchrotron radiation instrument, Concentration and temperature dependences of YBO3：Bi3＋ luminescence under VUV/UV excitation is observed, The emission and excitation spectra are assigned, and the mechanism for these phenomena is explored, which result from the energy transfer between Bi^3＋ ions occupying different sites in YB03 crystal lattice.     

多自旋态离子Co替代诱导La2/3Ca1/3MnO3体系的输运反常

利用具有多自旋态的Co离子进行Mn位替代,制备了La_2/3Ca_1/3Mn_1-xCo_xO₃ (0≤x≤0.15) 系列样品并研究了体系的结构和输运特性.结果表明,在替代范围内,样品呈现很好的单相结构,各晶格参数随替代量的增大而减小;Co替代导致体系出现电输运反常,具体表现为在居里温度T_C以下电阻-温度曲线的二次金属-绝缘转 关键词： Mn位替代 双峰现象 自旋结构 磁电阻效应     

Eu3+离子掺杂钛酸盐纳米管的直接水热合成与发光性能

 采用纳米管制备和离子掺杂同步进行的直接水热合成方法，合成了纯钛酸盐纳米管（TNT）和Eu³⁺离子掺杂的纳米管（TNT-Eu）；并利用X射线衍射（XRD）、透射电子显微镜（TEM）、光致发光谱仪研究了纳米管的形貌特征、物相组成、热稳定性和发光性能。结果显示：这种方法简便易行、稳定性好、产率高。钛酸盐纳米管物相可近似表示为(H,Na)₂Ti₃O₇或(H,Na)₂(Ti,Eu)₃O₇。高温处理对钛酸盐纳米管的结构产生很大的影响，450 ℃下纳米管的层状结构被破坏，晶体结构转化为锐钛矿型的TiO₂。TNT-Eu样品的发光性能较强，出现的393.5 nm、593 nm、614 nm的谱带归属于⁵D₀-⁷F₁和⁵D₀-⁷F₂电子的跃迁。     

Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.     

Optical and magnetic properties of laser-deposited Co-doped ZnO thin films

We report the optical and magnetic properties of laser-deposited Zn_1−xCo_xO (x=0.06-0.3) thin films with no intentional electrical carrier doping. The analysis of the high-temperature magnetization data provides an unambiguous evidence that antiferromagnetic superexchange interaction is the dominant mechanism of the exchange coupling between Co ions in Zn_1−xCo_xO alloy, yielding the value of the effective exchange integral J₁/k_B to be about −27 K. The low-temperature magnetization data reveals a spin glass transition in Zn_1−xCo_xO alloy for the Co content x>0.15, giving the value of the spin freezing temperature T_f to be ∼8 and ∼12 K for x=0.2 and 0.25, respectively. Optical spectra analysis shows a linear increase of the band gap E_g with the increase of the Co content following E_g=3.231+1.144x eV.     

A位平均离子尺寸对六方RMnO3多铁化合物的结构和性能调控

实验研究了A位离子的化学内压对Hol-xDyMnO3(0≤x≤1)固溶体相结构物理性质的影响,发现掺杂稀土离子Dy3+所引起的内压力可使具有六方结构的HoMnO3向高压正交钙钛矿结构转变,形成六方相、六方相与高压正交相混相以及高压正交相3个区域.利用Rietveld方法,对Hol-xDyxMnO3的X射线衍射数据进行结...     

MAGNETIC PROPERTIES OF Pr2Co17-x Mx ( M＝Ga,Si) COMPOUNDS

The influence of Ga or Si substitution for Co on the structural and magnetic properties of Pr₂Co₁₇ compounds is investigated. All samples studied here are single phase and have the rhombohedral Th₂Zn₁₇-type structure. The unit-cell volume is found to increase linearly by the substitution of Ga for Co,but reduce by the substitution of Si for Co in Pr₂Co₁₇ compounds. In Pr₂Co_17-x M_x, the Curie temperature decreases monoto nically with increasing at an approximate rate of 153K per Ga atom and 175K per Si atom. The saturation magnetic moment of Pr₂Co_17-x M_x ( M=Ga,Si) decreases with increasing x. The rates of the decrease are larger than that expected as a simple dilution. For Pr₂Co_17-xSi_x ,the spin reorientation transition is observed above room temperature. The spin-reorientation temperature Tsrfirst decreases with increasing Si content and then increases at higher x values (x>2). The spin reorientat ion behavior is interpreted by the competition between the Pr and Co sublattice anisotropies. The easy magnetization direction in Pr₂Co_17-xGa_x compounds is perpendicular to the c-axis, and no spin reorientation transition is observed.     

High-pressure effects on the crystal and magnetic structure of the Nd0.78Ba0.22CoO3 cobaltite

The crystal and magnetic structure of the Nd_0.78Ba_0.22CoO₃ cobaltite is studied by neutron diffraction at high pressures up to 4.2 GPa in the temperature range 10–300 K. The pressure dependences of structural parameters are obtained. Ferromagnetic ordering of the Co sublattice is observed at normal pressure below T _C ～ 140 K, and ferrimagnetic ordering of the Co and Nd sublattices with an antiparallel direction of magnetic moments appears at T _F ～ 40 K. The magnetic moment of Co and the temperature T _C change slightly under pressure, which points to the stability of the initial intermediate-spin (S = 1) state of Co³⁺ ions. This behavior differs considerably from the characteristic behavior of cobaltites that are close in chemical composition and structure and exhibit ferromagnetic ordering of only the Co sublattice. In these cobaltites, the magnetic moment of Co is substantially suppressed and T _C decreases under pressure, which is related to the change in the state of Co³⁺ ions from the intermediate spin state to the nonmagnetic low-spin state (S = 0). The interplay between the appearance of the magnetic interaction of the R-Co sublattices and the stability of the spin state of Co³⁺ ions in the Nd_0.78Ba_0.22CoO₃ cobaltite is discussed.     

Magnetic properties of transition metal substituted La0.85Ag0.15Mn1−yMyO3 compounds (M=Co, Cr and Al)

In this paper we report a systematic study of Mn-site substitution by M=Co, Cr and Al in La_0.85Ag_0.15MnO₃ series to understand the magnetic interactions between Mn and other transition metals. The long-range ferromagnetic (FM) ordering of the parent compound was significantly affected by Mn-site substitution. The measured magnetic properties of Co-doped samples have been explained on the basis of FM interactions in Mn³⁺-O-Mn⁴⁺, Co²⁺-O-Mn⁴⁺, Co³⁺-O-Mn⁴⁺ networks and simultaneous antiferromagnetic (AFM) interactions in Mn⁴⁺-O-Mn⁴⁺, Co²⁺-O-Mn³⁺ networks. The magnetic properties of Cr-doped compounds could be understood on the basis of double exchange FM interactions in Mn³⁺-O²⁻-Mn⁴⁺ networks and competing AFM in Cr³⁺-O-Mn⁴⁺, Mn⁴⁺-O-Mn⁴⁺, Cr³⁺-O-Mn³⁺ networks. However, it is found that the doping of Al ions play a role of magnetic dilution, without contributing any other competing magnetic interaction. The field variations of magnetization of all the above three series could be analysed by fitting to Brillouin function model and the effective spin contribution for FM has been determined. The measured saturation magnetization has been explained quantitatively.     

Spectral Hole-Burning of Eu^3＋：Y2SiO5 Crystal at 16 K

By using an Ar^＋ ion laser, a tunable Rh 6G dye laser （linewidth 0.5cm^-1） pumped by the second harmonic of a YAG：Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3＋-doped Y2SiO5 crystal. Persistent ,spectral hole burning （PSHB） are observed in the Eu^3＋ ions spectral lines （^5 Do-T Fo transition） in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.     

Helicity Formalism of the Angular Distributions for the Process e++e－→J/ψ→V+X,X→3P

The helicity formalism of the angular distributions for the process e⁺+e^－→J/ψ→V+X,X→P₁+P₂+P₃(V and stand for vr and psealar meson, respectvely) are given in this paper. It provides the theical formula for determining the spin and parity of the intermediate state X of the above process.     

EPR spectroscopy of weak exchange interactions between Co2+ ions in ZnO

Electron paramagnetic resonance (EPR) is used to identify the next nearest neighbour Co²⁺ pairs coupled by spin–spin interaction in Co‐doped ZnO single crystals grown by the hydrothermal technique. These dimer centers are described by a spin Hamiltonian with exchange coupling terms written as interaction between identical effective spins S^eff = 1/2 of the lowest ground state Kramers doublets of the two Co²⁺ ions. The exchange parameters of weakly ferromagnetically coupled next nearest neighbor Co²⁺ pairs are estimated. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Substitution of manganese by trivalent and tetravalent elements in the CMR perovskites Pr1-x(Ca,Sr)xMnO3

The substitution of trivalent (M=In, Ga) and tetravalent elements (M=Sn, Ti) for Mn(III) and Mn(IV) respectively has been studied in the colossal magnetoresistant (CMR) perovskites Pr_0.7Ca_0.2Sr_0.1MnO₃ (type I) and Pr_0.5Sr_0.5MnO₃ (type II). For the former compound, whatever the element, the temperature transition (T_max or T_C) separating the ferromagnetic metallic (FM) state and the paramagnetic semiconductinc (PSC) state decreases dramatically when the substituted element content is increased, the saturated magnetic moment at low temperature being slightly decreased. For these type I perovskites the maximum magnetoresistance is achieved for Pr_0.7Ca_0.2Sr_0.1Mn_0.99Ga_0.01O₃, reaching a resistance ratio of 600 at 127rK against 275 at 151rK for the pristine sample. These results show that by decreasing or increasing the hole concentration via M(IV) or M(III) substitutions on the manganese site the Curie temperature T_C is always decreased. In contrast to the type I perovskites, two different effects are evidenced for the Pr_0.5Sr_0.5Mn_1-xM_xO₃ substituted type II phases depending on the M valence. On one hand for M=Ga, In when x increases the antiferromagnetic semiconducting (AFSC) state and the PSC state are favoured at the expense of ferromagnetism. On the other hand for M=Sn, Ti the low temperature AFSC state tends to disappear and for x>0.04 only a FM to PSC transition still exits similarly to that observed in type I perovskites. Correspondingly the magnetization versus temperature curves evolve from the bell shape curve typical of the charge ordering state to that of a ferromagnetic compound. The effect of valence and d⁰, d¹⁰ electronic configurations in both type I an II CMR perovskites is discussed.     

High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

We present the high-temperature characteristics of Ti/Al/Ni/Au（15 nm/220 nm/40 nm/50 nm） multiplayer contacts to n-type GaN （Nd = 3.7 × 10^17 cm^-3, Nd = 3.0 × 10^18 cm^-3）. The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the AI layer even the Ti layer.