重离子束对北里链霉菌的诱变效应

考察不同剂量重离子束对北里链霉菌的致死及诱变效应, 可确定最有利于筛选高产菌株的重离子束辐照剂量。 利用不同剂量的重离子束辐照北里链霉菌孢子, 统计了存活率、 致死率、 正负突变率。 结果发现, 在5 Gy重离子辐照时北里链霉菌出现较高致死率, 其后随剂量升高, 致死率变化较平缓。 各辐照剂量下正负突变率相比较, 40 Gy时正突变率最高, 负突变率相对较低, 存活率为0.92%。 因此确定40 Gy是对北里链霉菌高产菌株筛选最有利的辐照剂量。 To define the optimum dose of heavy ion beams for selecting high productive strains, we should study mortality and mutation effects of Streptomyces kitasatoensis irradiated by heavy ion beams in diffe rent doses. In this research, spores of Streptomyces kitasatoensis were irradiated by heavy ion beams with different doses. And survival rate, mortality rate, positive mutation and negative mutation were analyzed statistically. The results showed that high mortality rate appeared from 5 Gy and then the mortality rate curve became gently. Compared the positive and negative mutations in different doses, highest positive mutation was obtained in 40 Gy, while the negative mutation was lower in this dose, and the survival rate was 0.92%. So we defined that optimum dose of heavy ions radiation for Streptomyces kitasatoensis selection was 40 Gy in this experiment.     

重离子辐射植物的诱变效应研究及应用

重离子生物技术已引起人们的广泛关注, 植物育种是重离子生物技术研究和应用的热点之一。 简要介绍了重离子的基本特征和在育种应用中的优势, 综述了重离子辐射对植物分子、 细胞、 个体3个水平的诱变效应研究及重离子辐射育种取得的进展。 Heavy ion biotechnology has received much attention since the mid 1980s, when the first mutagenic effect of heavy ion beams was found in rice. Since then, plant breeding is one of the focuses in heavy ion biotechnology. In this paper we outlined the recent developments in plant breeding by heavy ion beams. We introduced briefly the essential characteristics and superiority of heavy ion beams applied in plant breeding, and reviewed further the mutagenic research in three levels(e.g., molecular, cell and individual) of plants. At last, we summarized artificial mutants obtained in plants irradiated by heavy ion beams.     

12C6+离子对阿维链霉菌累进辐照诱变效应研究

选用12C6+ 离子束对阿维链霉菌诱变选育高产菌株与原始菌株进行辐照诱变, 研究其累进辐照效应。实验结果表明,在辐照剂量为10 Gy时, 原始菌株比诱变高产菌株存活率高, 抗辐射能力强;辐照剂量高于30 Gy时,诱变高产菌株比原始菌株存活率高, 抗辐射能力强。原始菌株正突变率最高的辐照剂量为50 Gy, 致死率99.43%,正突变率最高, 达34.2%;对诱变高产菌株辐照剂量为30 Gy,致死率94.97%,正突变率最高, 达23.5% 。累进辐照效应降低了最佳辐照剂量。 Mutagenic effect on the mutant high producing strain ZJAV Y1 203 and the original strain ZJAV A1 irradiated by ion beam of 12C6+ have been investigated. The experimental results indicated that the original strain has higher survival rate and stronger resistance to radiation than mutant high producing Strain at dose of 10 Gy. The mutant high producing strain has higher survival rate and stronger resistance to radiation than the original strain at the dose higher than 30 Gy. The lethality was 97% and the highest rate of orthomutation was 34.2%, when ZJAV A1 was irradiated by 50 Gy 12C6+ beam. The lethality was 94.97% and the highest rate of orthomutation was 23.5% when ZJAV Y1 203 was irradiated by 30 Gy 12C6+ beam. The best radiation dose is decreased by progressivity irradiation.     

重离子束注入与生物体的相互作用及遗传诱变的分子机制

低能重离子与生物体系相互作用及其生物诱变效应的应用研究在我国率先兴起， 并在应用中取得了很大的成就。 介绍了重离子注入与生物有机体的相互作用及其主要的生物学效应， 包括细胞染色体水平、 生理生化效应， 以及对DNA损伤修复、 基因表达、 甲基化修饰的影响。 总结了离子注入诱变的分子遗传学机理的相关研究。 同时分析、 比较讨论了高能与低能离子、 离子束与射线的生物学效应的异同。 提出了离子注入今后的研究方向， 特别指出了离子注入对生物基因表达影响研究的重要性。 As a new mutagenesis technique, low energy heavy ion implantation started in China for the study of interaction effect between incident ions and organism, and great achievements have been obtained in crop breeding. The article reviewed the main biological effects induced by heavy ion implantation, including physiology, biochemistry and genetics effects, on levels of cell and chromosome, gene expression, DNA methylation, DNA damage and reparation etc. It compared the differences in mutagenesis for organism by high energy and low energy ion implantation, as well as γ ray radiaiton. Future investigation topics were proposed, the emphasis of researches in future was pointed out, i.e., the molecular mechanism and effects of gene differential expression of organism treated by ion implantation.     

低能离子注入育种中次级效应影响的模拟研究

低能离子注入育种作为一种有效的育种方法在实践中进行了大量的尝试并取得了一系列重要成果,但其作用机理一直都存在着巨大的争议,特别是射程很短的低能重离子如何穿透到种子内部触发生物效应。本研究利用SRIM、CASINO、Geant4模拟程序对低能离子注入生物样品的离子注入深度进行模拟和定量分析,并对次级粒子可能产生的影响进行了定量模拟研究。结果显示,低能重离子本身射程一般都小于1 μm,选用轻离子、提高注入能量、采用干种子进行注入,都有利于增加穿透深度。次级过程中,反冲质子的最大射程比初级入射离子的稍大,不能显著提升穿透能力。次级过程产生的粒子中只有X射线可以明显提高穿透种子的深度,只要剂量足够大,总会有少量X射线穿透到很深的地方。The breeding method by low-energy ion implantation has been proved to be a valuable breeding method by a large number of practical attempts, but the mechanism of the method has always been in a large dispute. The most difficult thing to be understood is how the low energy heavy ion with such a short range (normally shorter than 1 μm) can penetrate into the inner part of seeds to trigger the biological effects. In this paper, simulations with quantitative analysis were performed for the low energy ion implantating into biological samples and the effects caused by the secondary particles using SRIM, CASINO and Geant4 simulation programs. The results showed that the ranges of low energy heavy ions are normally less than 1 μm. The ranges can become longer if dry seeds and light ions are used with a higher energy. The ranges of recoil protons are only a little longer than that of the primary ions. Among the secondary particles produced in the ion implanting process, only the X-ray can obviously increase the penetration depth in seeds. There always will be a small amount of X-rays which can penetrate into the deeper place in the seed if the ion dose is high enough.     

离子辐照单晶Si损伤效应的研究

回顾了低能离子注入单晶Si经由核弹性碰撞引起的损伤特征及其常规的研究方法,介绍了快重离子辐照单晶Si经由电子能损引起的损伤特点及研究现状,并对该领域的研究作了展望. The radiation damage in silicon induced by low energy ion implantation was briefly reviewed together with a short introduction to the common techniques in the area. The damage characteristics of swift heavy ion irradiation in silicon and its investigations were introduced with emphasis on the effects induced by processes of electronic energy losses. It is shown that swift heavy ion can induce defects far beyond the projected range and up to 28 MeV/μm the electronic energy ...     

高能质子引起器件单粒子效应的研究方法

简略介绍了高能质子在半导体芯片中引起单粒子效应的实验测量和理论分析方法,包括核反应分析方法、半经验方法,介绍了质子和重离子翻转截面间的关系,并用重离子实验数据预测器件在质子环境下的翻转率. This article introduces briefly the experimental and theoretical methods that have been used to study high energy proton induced single event effect in semiconductor devices. The theoretical methods including nuclear reaction analysis method and semi empirical method are presented. The relationship of upset cross section between proton and heavy ions is described. Finally, on orbit proton upset rates are predicted by using the heavy ion test data.     

Active spot-scanning test with heavy ions at HIRFL-CSR

An active spot beam delivery system for heavy ion therapy has been developed based on the Cooling Storage Ring at HIRFL-CSR, where the pencil carbon-ion beams were scanned within a target volume transversely by a pair of orthogonal (horizontal and vertical) dipole magnets to paint the slices of the target volume and longitudinally by active energy variation of the synchrotron slice by slice. The unique techniques such as dose shaping via active energy variation and magnetic deflection constitute a promising three-dimensional conformal even intensity-modulated radiotherapy with heavy ions at HIRFL-CSR. In this paper, the verification of active energy variation and the calibration of steerable beam deflection are shown, as the basic functionality components of the active spot-scanning system. Additionally, based on the capability of creating homogeneous irradiation fields with steerable pencil beams, a radiobiological experiment like cell survival measurement has been performed aiming at comparison of the radiobiological effects under active and passive beam deliveries.     

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

The influences of total ionizing dose(TID) on the single event effect(SEE) sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset(SEU) in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by γ-rays and heavy ions. Retention errors in floating gate(FG) cells after heavy ion irradiation are observed.Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer(LET) value. The underlying mechanism is identified as the combination of the defects induced by γ-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling(mTAT) path across the tunnel oxide.     

用12C离子模拟质子引起的单粒子效应

在理论分析的基础上 ,提出了一种利用兰州重离子加速器提供的高能12C离子模拟质子引起单粒子效应的途径 .在保证核反应机制是引起单粒子效应主要机制的前提下,用高能12C离子可以模拟质子在功率金属 -氧化物 -半导体场效应晶体管中引起的单粒子烧毁以及单粒子栅极击穿 ,获得质子单粒子效应的饱和截面 ,定性研究质子单粒子效应的角度效应 ,还可以作为高能质子单粒子效应实验前的预备实验 .该方法拓展了兰州重离子加速器加速的轻的重离子在单粒子效应实验研究方面的应用 ,对现阶段国内开展质子单粒子效应实验研究具有重要意义. The mechanisms for proton and heavy ion induced single event effect (SEE) are discussed and a method to simulate proton induced SSEE (PSEE) with high energy 12 C is proposed in this paper. The experiments which can be done by using this method include single event burnout (SEB) and single event gate rupture in power MOSFET, single event upset (SEU) and single event transient (SET) in less sensitive device and angle effect. The experimets with high energy ...     

Ce 基重费米子材料的电子态研究与维度调控

重费米子材料作为一类典型的强关联电子体系,蕴含着非常规超导、奇异金属、量子临界、 磁有序、重电子态、关联拓扑态等新奇的量子态,而4f 电子在其中扮演着重要的作用。随着高分 辨角分辨光电子能谱和薄膜生长技术的发展,精确探测重费米子材料中4f 电子在能量/动量空间 的色散和谱权重成为了可能,这为从微观上理解这类材料中的电子关联效应和新奇量子现象提供 了重要的基础。本论文总结了几个典型的重费米子单晶和薄膜体系的电子态研究,包括Ce-115 体 系、CeCu2Si2、CeRh6Ge4 以及单晶 Ce 膜等。这些结果为理解重费米子体系中重电子态的形成 和温度演化、近藤杂化的能带/动量依赖、重电子能带与超导的关系、近藤效应与磁性和其它量子 态的竞争、4f 电子的维度调控等重要物理问题提供了谱学证据。     

Quark confinement and the fractional quantum Hall effect

Working in the physics of Wilson factor and Aharonov-Bohm effect, we find in the fluxtube-quark system the topology of a baryon consisting of three heavy flavor quarks resembles that of the fractional quantum Hall effect (FQHE) in condensed matter. This similarity yields the result that the constituent quarks of baryon have the ``filling factor' 1/3, thus the previous conjecture that quark confinement is a correlation effect is confirmed. Moreover, by deriving a Hamiltonian of the system analogous to that of FQHE, we predict an energy gap for the ground state of a heavy three-quark system.     

Quark confinement and the fractional quantum Hall effect

Working in the physics of Wilson factor and Aharonov-Bohm effect,we find in the fluxtubequark system the topology of a baryon consisting of three heavy flavor quarks resembles that of the fractional quantum Hall effect(FQHE)in condensed matter.This similarity yields the result that the constituent quarks of baryon have the"filling factor"1/3.thus the previous conjecture that quark confinement is a correlation effect is confirmed.Moreover,by deriving a Hamiltonian of the system analogous to that of FQHE,we predict an energy gap for the ground state of a heavy three-quark system.     

Photovoltaic effect in unipolar multivalley semiconductors

Abstract

The theory of the nonequilibrium charge carrier transport in unipolar multivalley semiconductors is developed. It is shown that the diffusion of photoexcited nonequilibrium heavy and light electrons in multivalley semiconductors is a correlated process, like the ambipolar diffusion in the case of the electron-hole plasma. The light-induced intervalley transitions, resulting in the imbalance between the subsystems of the light and heavy electrons, give rise to the electromotive force (emf) through the mechanism of the Dember photovoltaic effect. The value of the emf occurring in the ‘metal-semiconductor-metal’ structure is calculated in the linear approximation in terms of the light intensity as a small parameter. It is shown that the emf is determined by the conductivity of heavy and light electron subsystems, as well as by the surface conductivity of the metal-semiconductor interface.     

惯性对多孔金属材料动态力学行为的影响

 对泡沫金属材料的力学性能已经进行了十分广泛的研究,但在对泡沫金属的应变率效应和惯性效应的研究中,尚存在一些矛盾的结论。为进一步认清惯性在多孔金属动态响应中的作用,用有限元计算方法模拟了二维Voronoi蜂窝的动态压缩行为,得到了不同速度下Voronoi蜂窝的3种变形模式。通过改变基体材料的密度和冲击速度进行“数值实验”,得到了相应“试件”的由冲击面和支撑面得到的宏观平均应力应变曲线和平台应力。根据数值模拟的结果,着重分析了惯性效应的影响。研究发现,惯性并不影响蜂窝的应力应变曲线,但它导致试件中宏观变形不均匀,是平台应力提高的主要原因。     

New calibrations and time stability of the response of the INTERCAST CR-39

We present new calibrations of different production batches (from 1989 to 1999) of the INTERCAST CR-39, using the BNL-AGS 1 A GeV iron beam. The comparison with previous results, obtained with the 158 A GeV lead beam from the CERN-SPS shows that, while each production batch has a different calibration curve (mainly due to minor differences in the production conditions), the aging effect is negligible. We also tested the dependence of the CR-39 response from the time elapsed between exposure and analysis (fading effect). The fading effect, if present, is less then 10%. It may be compatible with the experimental uncertainties on the bulk etching rate v_B.     

中能重离子剂量深度曲线计算

重离子束应用在治疗肿瘤上具有优越的深度剂量分布特点.发展精确计算剂量的物理模型理论成为其应用的关键,为此,首先从生物细胞的化学组成成分、放射生物学的特点和物理剂量计算的要求对理论计算的介质进行了选择.利用现有计算核反应部分截面和修正的总截面经验公式,同时考虑了不同影响理论计算的因素,提出了中能重离子理论计算深度剂量分布的方法,其计算结果与实验数据符合很好,可应用在重离子治癌和生物学效应研究中.     

相对论重离子碰撞手征电荷分离效应的研究

相对论重离子碰撞的拓扑荷作用破坏作用平面两侧不同手征性的夸克数目的平衡,从而引起P和CP破坏特征。本工作主要分析RHIC和LHC能区的手征电荷分离作用,分析手征电荷分离随碰撞中心度、碰撞能量和核屏蔽等依赖关系。并未发现手征电荷分离效应与碰撞能量大小有非常紧密的依赖关系,但发现核屏蔽效应对手征电荷分离有重要的影响,与不考虑屏蔽效应相比,考虑屏蔽效应会使手征分离效应明显压低,由于屏蔽效应出现,使得a₊₊（a_--）的分布与a_+-（a_-+）分布并不对称。并且还发现手征分离效应主要发生在碰撞参量较大的周边碰撞,越接近中心碰撞,手征分离效应几乎可以忽略。The topological charge interactions in relativistic heavy ion collisions cause quark chirality imbalance, resulting in charge separation under the strong magnetic field and local P and CP violation. In this paper, the chiral charge separation at RHIC and LHC energies is systematically analyzed as functions of the collision centrality, the collision energy and the nuclear shielding factor. It is found that there is not a very close dependence of the chiral charge separation effect on the collision energies, but that has an important dependence on nuclear shielding factor. Compared with the non-shielding effect, the shielding effect can reduce the chiral separation effect obviously. Due to the shielding effect, the distribution of a₊₊(a_--) and the distribution of a_+-(a_-+) are asymmetric. One also finds that chiral separation effect, which is almost negligible when more close to the central collision, occurs mainly in the peripheral collision for larger impact parameter.     

基于基体效应校正和对应分析的便携式X荧光光谱法对土壤重金属的研究

随着工业化和城市化的加深,城市土壤重金属污染状况愈发严重,而传统的实验室化学分析方法例如电感耦合等离子体质谱法分析周期较长,易产生废弃实验试剂二次污染环境。便携式X荧光光谱法是一种可以在野外现场直接进行快速、无损分析的测试手段,而基体效应是影响该方法测试准确度和精密度的最主要因素。当今较为常用的校正方法为传统线性回归法,该方法受离群值影响较大,处理后数据依然存在较大的偏差。本研究通过将常量元素的测试数据加入到待测元素的校正方程中,来减弱测试过程中基体效应的影响。利用便携式X荧光光谱仪对吉林大学各校区土壤样品的Cr,Ni,Cu,Zn和Pb重金属含量在原位条件下进行了快速测试,探究了对各重金属元素基体效应影响最大的常量元素,并结合偏最小二乘法及多元线性回归对原始谢尔曼方程进行调整,利用电感耦合等离子体质谱法作为参照,通过新方程对各重金属元素进行了基体效应校正,通过统计学参数对比该方法处理后的数据和经传统线性回归法处理后的数据的区别,并通过对应分析综合分析元素及样品间的相关性。结果表明常量元素是基体效应影响的重要元素,基于不同常量元素的基体效应校正方程效果较好,适用性Cr>Pb>Zn>Ni>Cu,校正后数据质量得到了明显提高,决定系数增大,回归图像更加集中,平均绝对误差、均方根误差等参数均进一步减小,校正效果优于传统的线性回归法。基体效应校正法主要是通过减小离群值的偏离程度来减小数据总体的平均误差和离散程度。处理后数据满足定量分析要求,可以推广至便携式X荧光光谱法对于土壤重金属快速的大面积扫面测试,检测环境质量。同时对应分析是一种多维数据维度与多维数据维度之间的分析方法,用于多种变量间的分类与相关性分析具有非常优秀的效果。