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1.
利用二维器件模拟软件ISE-TCAD 10.0,对结终端采用结扩展保护技术的4H-SiC PiN二极管平面器件进行反向耐压特性的模拟,并获得许多有价值的模拟数据.依据所得的模拟数据进行此种二极管器件的研制.实验测试表明,此二极管的模拟优化数据与实验测试的结果一致性较好,4H-SiC PiN二极管所测得到的反向电压达1600 V,该反向耐压数值达到理想平面结的击穿耐压90%以上. 相似文献
2.
In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode (MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage. 相似文献
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针对极端环境下耐辐照半导体核探测器的研制需求,采用耐高温、耐辐照的4H碳化硅(4H-SiC)宽禁带材料制成肖特基二极管,研究了该探测器对241Am源粒子的电荷收集效率。从电容-电压曲线得出该二极管外延层净掺杂数密度为1.991015/cm3。从正向电流-电压曲线获得该二极管肖特基势垒高度为1.66 eV,理想因子为1.07,表明该探测器具备良好的热电子发射特性。在反向偏压高达700 V时,该二极管未击穿,其漏电流仅为21 nA,具有较高的击穿电压。在反向偏压为0~350 V范围内研究了该探测器对3.5 MeV 粒子电荷收集效率,在0 V时为48.7%,在150 V时为99.4%,表明该探测器具有良好的电荷收集特性。 相似文献
5.
The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 ℃-200 ℃. The diode shows a stable Schottky barrier height of up to 200 ℃ and a stable operation under a continuous forward current of 100 A/cm2. 相似文献
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Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring 下载免费PDF全文
This paper describes the successful fabrication of 4H-SiC junction barrier Schottky(JBS) rectifiers with a linearly graded field limiting ring(LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2(about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length. 相似文献
7.
Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics 总被引:1,自引:0,他引:1 下载免费PDF全文
An improved structure of Schottky rectifier,called a trapezoid mesa trench metal-oxide semiconductor (MOS) barrier Schottky rectifier (TM-TMBS),is proposed and studied by two-dimensional numerical simulations.Both forward and especially better reverse I-V characteristics,including lower leakage current and higher breakdown voltage,are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier (TMBS) as well as a conventional planar Schottky barrier diode rectifier.Optimized device parameters corresponding to the requirement for high breakdown voltage are given.With optimized parameters,TM-TMBS attains a breakdown voltage of 186 V,which is 6.3% larger than that of the optimized TMBS,and a leakage current of 4.3×10 6 A/cm 2,which is 26% smaller than that of the optimized TMBS.The relationship between optimized breakdown voltage and some device parameters is studied.Explanations and design rules are given according to this relationship. 相似文献
8.
This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H-SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure. 相似文献
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结合SiGe材料的优异性能与超结结构在功率器件方面的优势,提出了一种超结SiGe功率二极管.该器件有两个重要特点:一是由轻掺杂的p型柱和n型柱相互交替形成超结结构,取代传统功率二极管的n-基区;二是阳极p+区采用很薄的应变SiGe材料.该二极管可以克服常规Si p+n-n+功率二极管存在的一些缺陷,如阻断电压增大的同时,正向导通压降随之增大,反向恢复时间也变长.利用二维器件模拟软件MEDICI仿真
关键词:
超结
锗硅二极管
n
p柱宽度
电学特性 相似文献
10.
This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. 相似文献
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This paper proposes a novel super junction (SJ) SiGe switching power
diode which has a columnar structure of alternating p- and
n- doped pillar substituting conventional n- base region
and has far thinner strained SiGe p+ layer to overcome the
drawbacks of existing Si switching power diode. The SJ SiGe diode
can achieve low specific on-resistance, high breakdown voltages and
fast switching speed. The results indicate that the forward voltage
drop of SJ SiGe diode is much lower than that of conventional Si
power diode when the operating current densities do not exceed
1000 A/cm2, which is very good for getting lower operating
loss. The forward voltage drop of the Si diode is 0.66V whereas that
of the SJ SiGe diode is only 0.52 V at operating current density of
10 A/cm2. The breakdown voltages are 203 V for the former and
235 V for the latter. Compared with the conventional Si power diode,
the reverse recovery time of SJ SiGe diode with 20 per cent Ge
content is shortened by above a half and the peak reverse current is
reduced by over 15%. The SJ SiGe diode can remarkably improve the
characteristics of power diode by combining the merits of both SJ
structure and SiGe material. 相似文献
12.
Study and optimal simulation of 4H-SiC floating junction Schottky barrier diodes’ structures and electric properties 下载免费PDF全文
This paper stuides the structures of 4H-SiC floating junction Schottky barrier diodes. Some structure parameters of devices are optimized with commercial simulator based on forward and reverse electrical characteristics. Compared with conventional power Schottky barrier diodes, the devices are featured by highly doped drift region and embedded floating junction layers, which can ensure high breakdown voltage while keeping lower specific on-state resistance, and solve the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4.36 kV and the specific on-resistance is 5.8 mΩ·cm2 when the Baliga figure of merit value of 13.1 GW/cm2 is achieved. 相似文献
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We report on the successful post-implantation annealing of 4H-SiC samples that were implanted at elevated temperature with high-dose Al implants. Anneals at temperatures up to 1700 °C were conducted in a silane ambient at a process pressure of 150 Torr using a cold wall CVD reactor. A series of 30 min anneals were performed in 3% silane premixed in 97% UHP argon (Ar), which was further diluted in a 6 slm Ar carrier gas. The surface morphology of the samples was studied via plan-view secondary electron microscopy (SEM) and atomic force microscopy (AFM). The resulting surface morphology showed no evidence of step bunching or any other surface degradation. We also report the electrical characterization of Al+ implanted p+/n 4H-SiC diodes realized on samples that were annealed at 1600 °C. The current-voltage characteristics of the p+/n diodes and the resistivity of the implanted layer were measured at room temperature. Most of the diodes had a turn-on voltage of 1.75 V, with ideality factors of up to 1.2 and very low reverse leakage current at −100 V, corresponding to an average reverse leakage current density of (9.7 ± 0.4) × 10−9 A/cm2. The breakdown voltage was near the theoretical value for an epitaxial 4H-SiC layer. However, the resistivity value of the implanted Al+ layer was 11 Ω cm, which was an order magnitude higher than the expected value. 相似文献
14.
Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension 下载免费PDF全文
This paper investigates the behaviours of 4H--SiC merged
PiN Schottky (MPS) rectifiers with junction termination extension
(JTE) by extensive numerical simulations. The simulated results show
that the present model matches the experimental data very well. The
influences of the JTE design parameters such as the doping
concentration and length of the JTE on the breakdown characteristics
are discussed in detail. Then the temperature sensitivity of the
forward behaviour is studied in terms of the different designs of
4H--SiC MPS with JTE, which provides a particularly useful guideline
for the optimal design of MPS rectifiers with JTE. 相似文献
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Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers 下载免费PDF全文
The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and mesa bottom corner,are investigated by numerical simulation.The simulation results show that a deep mesa height,a small mesa angle and a smooth mesa bottom(without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution.Moreover,an optimized mesa structure without sub-trench(mesa height of 2.2 μm and mesa angle of 20°) is experimentally demonstrated.A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm~2 are obtained from the fabricated diode with a 30-μm thick N~- epi-layer,corresponding to 85% of the ideal parallel-plane value.The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge. 相似文献
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Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer 下载免费PDF全文
In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown.The measured dc common-emitter current gain is 16.8 at IC = 28.6 mA(J C = 183.4 A/cm2),and it increases with the collector current density increasing.The specific on-state resistance(Rsp-on) is32.3mΩ·cm 2 and the open-base breakdown voltage reaches 410 V.The emitter N-type specific contact resistance and N + emitter layer sheet resistance are 1.7×10-3 Ω·cm2 and 150 /,respectively. 相似文献
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<正>A junction barrier Schottky(JBS) rectifier with an improved P-well on 4H-SiC is proposed to improve the VF-IR trade-off and the breakdown voltage.The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3×10-8 times that of the common JBS rectifier at no expense of the forward voltage drop.This is because the depletion layer thickness in the P-well region at the same reverse voltage is larger than in the P+ grid,resulting in a lower spreading current and tunneling current.As a result,the breakdown voltage of the proposed JBS rectifier is over 1.6 kV,that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field.Although the series resistance of the proposed JBS rectifier is a little larger than that of the common JBS rectifier,the figure of merit(FOM) of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier.Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge(ESD) in the human body model(HBM) circuits,the failure energy of the proposed JBS rectifier increases 17%compared with that of the common JBS rectifier. 相似文献
19.
We report the fabrication of p-ZnO/n- Zn0.8Cd0.2O/n-ZnO heterojunctions that contain Al–N codoped p-ZnO, undoped n- Zn0.8Cd0.2O, and Al-doped n-ZnO layers. An InZn alloy is used as the p- and n-ZnO Ohmic contact electrodes. This structure exhibits improved rectifying p–n junction behavior, with forward turn-on voltage in the range of 3–5 V. The reverse breakdown voltage can be as high as 15 V, with 10?6-A reverse leakage current. Photoluminescence spectra show strong near band-edge emissions for both p- and n-ZnO at 368 nm and for undoped n- Zn0.8Cd0.2O, which is substantially red-shifted to 399 nm. 相似文献
20.
Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes 下载免费PDF全文
Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated.Based on the measured current–voltage and capacitance–voltage curves,the electrical characteristics of AlN/GaN Schottky diode,such as Schottky barrier height,turn-on voltage,reverse breakdown voltage,ideal factor,and the current-transport mechanism,are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrdinger’s and Poisson’s equations.It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes.However,more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability,and causes a larger leakage current and lower reverse breakdown voltage,even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. 相似文献