| Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer |
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| 引用本文： | 张倩,张玉明,元磊,张义门,汤晓燕,宋庆文.Fabrication and characterization of 4H—SiC bipolar junction transistor with double base epilayer[J].中国物理 B,2012,21(8):88502-088502. |
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| 作者姓名： | 张倩 张玉明 元磊 张义门 汤晓燕 宋庆文 |
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| 作者单位： | School of Microelectronics,Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, Xidian University |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant No. 60876061） and the National Defense Key Laboratory Foundation from Nanjing National Defense Key Laboratory of Nanjing Electronic Devices Institute, China （Grant No. 20090C1403）. |
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| 摘 要： | In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown.The measured dc common-emitter current gain is 16.8 at IC = 28.6 mA(J C = 183.4 A/cm2),and it increases with the collector current density increasing.The specific on-state resistance(Rsp-on) is32.3mΩ·cm 2 and the open-base breakdown voltage reaches 410 V.The emitter N-type specific contact resistance and N + emitter layer sheet resistance are 1.7×10-3 Ω·cm2 and 150 /,respectively.
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| 关 键 词： | 4H-SiC bipolar junction transistors common-emitter current gain specific onresistance open-base breakdown voltage |
| 收稿时间： | 2011-12-08 |
Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer |
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| Zhang Qian,Zhang Yu-Ming,Yuan Lei,Zhang Yi-Men,Tang Xiao-Yan,Song Qing-Wen.Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer[J].Chinese Physics B,2012,21(8):88502-088502. |
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| Authors: | Zhang Qian Zhang Yu-Ming Yuan Lei Zhang Yi-Men Tang Xiao-Yan Song Qing-Wen |
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| Institution: | School of Microelectronics, Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, Xidian University, Xi'an 710071, China |
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| Abstract: | In this paper we report on a novel structure of 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at IC=28.6 mA (JC=183.4 A/cm2), and it increases with the collector current density increasing. The specific on-state resistance (Rsp-on) is 32.3 mΩ·cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N + emitter layer sheet resistance are 1.7× 10-3 Ω·cm2 and 150 Ω /□, respectively. |
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| Keywords: | 4H-SiC bipolar junction transistors common-emitter current gain specific on-resistance open-base breakdown voltage |
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