Improved multiferroic properties of La-doped 0.6BiFeO₃-0.4SrTiO₃ solid solution ceramics

The 0.6(Bi1-xLax)FeO 3-0.4SrTiO 3(x = 0,0.1) multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure.The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant ε r and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization(Pr) and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6(Bi0.9La0.1)FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization M r ～ 0.135 emμ/g and ferroelectricity with Pr ～ 5.94 μC/cm 2 at room temperature.     

Homogeneous interface-type resistance switching in Au/La_0.67Ca_0.33MnO₃/SrTiO₃/F:SnO₂ heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 × 10 4 % by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

Charge ordering modulations in Bi0.4Ca0.6MnO3 film with a thickness of 110 nm

Low temperature sample stage in transmission electron microscope is used to investigate the charge ordering behaviours in Bi_0.4Ca_0.6MnO₃ film with a thickness of 110 nm at 103 K. Six different types of superlattice structures are observed using selected-area electron diffraction (SAED) technique, while three of them match well with the modulation stripes in high-resolution transmission electron microscopy (HRTEM) images. It is found that the modulation periodicity and direction are completely different in the region close to the Bi_0.4Ca_0.6MnO₃/SrTiO₃ interface from those in the region a little far from the Bi_0.4Ca_0.6MnO₃/SrTiO₃ interface, and the possible reasons are discussed. Based on the experimental results, structural models are proposed for these localized modulated structures.     

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells

The resistive switching properties in amorphous Pr0.67Sr0.33MnO3 films deposited by pulsed laser deposition are investigated.Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr0.67Sr0.33MnO3 /F:SnO2 junctions are obtained at room temperature.Dramatically,the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range.The results allocated those two switching types to areas of different defect densities beneath the same electrode.The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role.An interface-effect-related resistance switching is proposed in an amorphous Pr0.67Sr0.33MnO3-based memory cell.     

The phase transition,hygroscopicity, and thermal expansion properties of Yb_2-xAl_xMo₃O₁₂

Materials with the formula Yb 2-xAlxMo3O12(x =0.1, 0.2, 0.3, 0.4, 0.5, 0.7, 0.9, 1.0, 1.1, 1.3, 1.5, and 1.8) were synthesized and their structures, phase transitions, and hygroscopicity investigated using X-ray powder diffrac- tion, Raman spectroscopy, and thermal analysis. It is shown that Yb2-xAlxMo3O12 solid solutions crystallize in a single monoclinic phase for 1.7 ≤ x ≤ 2.0 and in a single orthorhombic phase for 0.0 ≤ x ≤ 0.4, and exhibit the characteristics of both monoclinic and orthorhombic structures outside these compositional ranges. The monoclinic to orthorhombic phase transition temperature of Al2Mo3O12 can be reduced by partial substitution of Al 3+ by Yb3+, and the Yb2-x AlxMo3O12 (0.0 < x ≤ 2.0) materials are hydrated at room temperature and contain two kinds of water species. One of these interacts strongly with and hinders the motions of the polyhedra, while the other does not. The partial substitution of Al3+ for Yb3+ in Yb2Mo3O12 decreases its hygroscopicity, and the linear thermal expansion co- efficients after complete removal of water species are measured to be 9.1×10 6 /K, 5.5×10 6 /K, 5.74×10 6 /K, and 9.5 × 10 6 /K for Yb1.8 Al0.2 (MoO4)3 , Yb1.6Al0.4 (MoO4 )3, Yb0.4 Al1.6 (MoO4)3 , and Yb 0.2Al1.8 (MoO4)3 , respectively.     

Influence of a two-dimensional electron gas on current-voltage characteristics of Al_0.3Ga_0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors(HEMTs) are investigated and simulated using the self-consistent solution of the Schro¨dinger and Poisson equations for a two-dimensional electron gas(2DEG) in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 1013 A/m2 within a very narrow region(about 5 nm).For a current density of 7 × 1013 A/m2 passing through the 2DEG channel with a 2DEG density of above 1.2 × 1017 m-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

Valence changes and structural distortions in "charge ordered" manganites quantified by atomic-scale scanning transmission electron microscopy

We investigate the microscopic nature of the "charge ordering" modulation in mixed-valent manganites in real space using scanning transmission electron microscopy. The modulation in Bi0.5Sr0.4Ca0.1MnO3 has a uniform periodicity appearing as stripes in high angle annular dark field images. Geometric phase analysis shows the modulation to be a displacement wave with transverse amplitude (0.008+/-0.001)a and longitudinal amplitude (0.003+/-0.001)a. Series of energy loss spectra taken across the stripes show no periodic changes and place an upper bound of +/-0.04 on any valence changes of the Mn ions.     

High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.     

Influence of the Jahn-Teller distortion on magnetic ordering in TbMn_1-xFe_xO₃

The Jahn-Teller distortion plays an important role in determining the exchange interaction in rare-earth manganites.In this work we study the influence of the Jahn-Teller distortion on the magnetic structures of TbMn1-xFexO3(x = 0,0.02,0.05,0.10,and 0.20) single crystals in the basal MnO2 plane.The decrease in the quadruple splitting with the increasing Fe doping indicates the reduction of the Jahn-Teller distortion,which makes the nearest neighboring(NN) FM interaction dominant over the next nearest neighbor(NNN) AFM interaction.This alteration is favorable for the development of A-type AFM ordering instead of the spiral magnetic ordering,which collapses when x ≥ 0.05.The analysis of dielectric data indicates that the ferroelectricity is arising from the peculiar spiral magnetic ordering.     

Evolution of the 251 cm^-1 infrared phonon mode with temperature in Ba_0.6K_0.4Fe₂As₂

The far-infrared optical reflectivity of an optimally doped Ba1-xKxFe2As2(x =0.4) single crystal is measured from room temperature down to 4 K. We study the temperature dependence of the in-plane infrared-active phonon at 251 cm-1 . This phonon exhibits a symmetric line shape in the optical conductivity, suggesting that the coupling between the phonon and the electronic background is weak. Upon cooling down, the frequency of this phonon continuously increases, following the conventional temperature dependence expected in the absence of a structural or magnetic transition. The intensity of this phonon is temperature independent within the measurement accuracy. These observations indicate that the structural and magnetic phase transition might be completely suppressed by chemical doping in the optimally doped Ba0.6K0.4Fe2As2 compound.     

Performance of La₂O₃/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors

We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse.     

Magnetic properties of a Pt/Co₂ FeAl/MgO structure with perpendicular magnetic anisotropy

Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl(CFA)/MgO multilayers are studied to understand perpendicular magnetic anisotropy(PMA) of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization(M s) changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied.     

微波水热法制备铋铕共掺杂氧化钇磷光粉

用微波水热法制备化学计量比为(Y_0.94-x,Eu_0.06, Bi_x)₂O₃(x=0, 0.01~0.06 )的铋铕共掺杂氧化钇磷光粉。用XRD、SEM、EDS、荧光光谱及HRTEM等进行表征。结果表明:该系统由于铋的加入使(211)晶面的生长受到抑制;在激发波长346 nm时,由于铋的掺入使发光增强;随铋掺杂量的增加,其发光先增强后减弱,并在x=0.03时有最大值;因此该系统可作为320~375 nm的近紫外(如白光LED及高压汞灯)激发用磷光粉。该系统在激发波长为254 nm时,铋的加入使发光强度减弱;因此该系统不适合用于低压汞灯。     

VUV spectroscopy of Ce<Superscript>3+</Superscript>-doped Na<Subscript>0.4</Subscript>Lu<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript> single crystals

The short-wave transmission spectrum of Na_0.4Lu_0.6F_2.2 with the visible/ultraviolet transmission edge of 8 eV was studied. Absorption spectra of the 4f—5d transitions of the Ce³⁺ ion in the region of 4–8 eV were studied in Ce³⁺-doped Na_0.4Lu_0.6F_2.2 single crystals. Luminescence spectra in the ultraviolet and visible spectral regions, luminescence decay kinetics and reflection and luminescence excitation spectra in the visible/ultraviolet and ultraviolet regions (4–20 eV) were investigated at helium and room temperatures.     

La1/8Ca7/8MnO3/Sr0.95Nb0.05TiO3异质结的整流特性和磁输运性质

在5%Nb掺杂的SrTiO3衬底上用磁控溅射法外延生长了La1/aCa7/aMnO3薄膜形成异质结,该异质结有类似于传统P-n结的整流特性.磁场下扩散电压减小,当温度低于130 K以下,扩散电压的减小非常明显.这和在此温度以下,La1/8Ca7/aMnO3出现自旋倾斜态密切相关.我们计算出异质结的结电阻和磁致电阻(MR),在不同大小的正负偏压,不同磁场下,都得到负的MR值.我们给出界面附近的La1/8Ca7/8MnO3的能带结构并分析了外加磁场对洪德耦合,Jahn-Teller畸变等机制的作用,来解释该异质结的磁输运行为.结果有助于了解高Ca掺杂锰氧化物异质结的性质.     

10BaF₂:NaF,Na₃AlF₆/TiO₂ composite as a novel visible-light-driven photocatalyst based on upconversion emission

A rare-earth free upconversion luminescent material, 10BaF 2 :NaF, Na 3 AlF 6 , is synthesized by a hydrothermal method. The study of fluorescent spectrum indicates that it can convert visible light (550 nm–610 nm) into ultraviolet light (290 nm–350 nm), and two emission peaks at 304 nm and 324 nm are observed under the excitation of 583 nm at room temperature. Subsequently, 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 composite photocatalyst is prepared and its catalytic activity is evaluated by the photocatalytic reduction of CO 2 under visible light irradiation (λ > 515 nm). The results show that 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 is a more effective photocatalyst for CO 2 reduction than pure TiO 2 , their corresponding methanol yields are 179 and 0 μmol/g-cat under the same conditions. Additionally, the mechanism of photocatalytic reduction of CO 2 on 10BaF 2 :NaF, Na 3 AlF 6 /TiO 2 is proposed.     

The concentration quenching and crystallographic sites of Eu²⁺ in Ca₂BO₃Cl

A yellow phosphor, Ca2BO3 Cl:Eu2+ , is prepared by the high-temperature solid-state method. Under the condition of excitation sources ranging from ultraviolet to visible light, efficient yellow emission can be observed. The emission spectrum shows an asymmetrical single intensive band centred at 573 nm, which corresponds to the 4f 6 5d 1 →4f 7 transition of Eu2+ . Eu2+ ions occupy two types of Ca2+ sites in the Ca2BO3 Cl lattice and form two corresponding emission centres, respectively, which lead to the asymmetrical emission of Eu2+ in Ca2 BO 3 Cl. The emission intensity of Eu2+ in Ca2BO3 Cl is influenced by the Eu2+ doping concentration. Concentration quenching is discovered, and its mechanism is verified to be a dipole–dipole interaction. The value of the critical transfer distance is calculated to be 2.166 nm, which is in good agreement with the 2.120 nm value derived from the experimental data.     

Study on incident laser modulation using surface micro-defects on KH₂PO₄ crystal

KH2PO4 crystal is a crucial optical component of inertial confinement fusion.Modulation of an incident laser by surface micro-defects will induce the growth of surface damage,which largely restricts the enhancement of the laser induced damage threshold.The modulation of an incident laser by using different kinds of surface defects are simulated by employing the three-dimensional finite-difference time-domain method.The results indicate that after the modulation of surface defects,the light intensity distribution inside the crystal is badly distorted,with the light intensity enhanced symmetrically.The relations between modulation properties and defect geometries(e.g.,width,morphology,and depth of defects) are quite different for different defects.The modulation action is most obvious when the width of surface defects reaches 1.064 μm.For defects with smooth morphology,such as spherical pits,the degree of modulation is the smallest and the light intensity distribution seems relatively uniform.The degree of modulation increases rapidly with the increase of the depth of surface defects and becomes stable when the depth reaches a critical value.The critical depth is 1.064 μm for cuboid pits and radial cracks,while for ellipsoidal pits the value depends on both the width and the length of the defects.     

Eu掺杂SiO2纳米基质的发光特性

采用溶胶-凝胶(sol-gel)法制备了Eu掺杂的SiO₂干凝胶,分别用光致发光(PL)光谱、透射电镜(TEM)、扫描电镜(SEM)、红外吸收(IR)谱等分析手段对样品进行了表征,研究了SiO₂的基质中Eu³⁺、Eu²⁺的发光特性以及退火温度对发射光谱的影响,并对其发光机理进行了分析。结果表明,样品掺杂均匀,颗粒尺寸大约在50~80 nm,硼(B)离子进入SiO₂网格,成为了基质的一部分,改变了基质的网络结构。当采用258 nm激发样品时,随着退火温度的升高,红光发射强度先增强后减弱。对于经800 ℃退火处理的样品红光发射最强,出现了576 nm(⁵D₀ →⁷F₀),620 nm(⁵D₀ →⁷F₂),658 nm(⁵D₀ →⁷F₃)3条谱线,其中主峰位于 620 nm红光发射,对应于Eu³⁺离子的⁵D₀ →⁷F₂超灵敏跃迁,进一步说明B离子参与到基质中,形成了Si—O—B键,导致Eu³⁺离子所处配位环境的对称性降低,从而有利于Eu³⁺离子的特征发射;当采用271 nm激发样品时,随着退火温度的升高,蓝光发射强度先增强后减弱,经850 ℃退火的样品400~500 nm蓝光发射最强,归属于Eu²⁺的5d→4f的跃迁发射,证明在铝离子(Al³⁺)存在的情形下,在高温退火过程中Al³⁺部分取代Si⁴⁺形成AlO^-₄基团,掺杂Eu³⁺填补AlO^-₄基团附近的空位,增加了Eu³⁺周围的AlO^-₄四面体中氧原子的电子给予能力,使得Eu³⁺还原成Eu²⁺,从而得到了较强的蓝光发射。但是,当退火温度达到900 ℃时,由于稀土离子发生位置的迁移形成团簇红光和蓝光都明显地降低。